公开(公告)号：US11276754B2

公开(公告)日：2022-03-15

申请号：US16811293

申请日：2020-03-06

Applicant: Infineon Technologies AG

Inventor： Thomas Basler ,  Caspar Leendertz ,  Hans-Joachim Schulze

IPC: H01L29/08 ,  H01L29/16 ,  H01L29/06 ,  H01L29/66 ,  H01L29/32 ,  H01L29/78 ,  H01L21/04 ,  H01L29/10

Abstract: An embodiment of a semiconductor device includes a silicon carbide semiconductor body including source and body regions of opposite conductivity types. A trench structure extends from a first surface into the silicon carbide semiconductor body along a vertical direction, and includes a gate electrode and a gate dielectric. A contact is electrically connected to the source region at the first surface. The source region includes a first source sub-region directly adjoining the contact at a source contact area of the first surface, a second source sub-region, and a third source sub-region. The second sub-region is arranged between the first and third sub-regions along the vertical direction. A doping concentration profile along the vertical direction of the source region includes a doping concentration minimum in the second sub-region and a doping concentration maximum in the third sub-region. Each of the second and third sub-regions overlaps with the source contact area.

公开(公告)号：US11264464B2

公开(公告)日：2022-03-01

申请号：US16576042

申请日：2019-09-19

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Thomas Basler ,  Andre Rainer Stegner

IPC: H01L29/167 ,  H01L29/16 ,  H01L29/739

Abstract: A silicon carbide device includes a transistor cell with a front side doping region, a body region, and a drift region. The body region includes a first portion having a first average net doping concentration and a second portion having a second average net doping concentration. The first portion and the second portion have an extension of at least 50 nm in a vertical direction. The first average net doping concentration is at least two times the second average net doping concentration, and the first average net doping concentration is at least 1·1017 cm−3.

公开(公告)号：US20210159316A1

公开(公告)日：2021-05-27

申请号：US17163955

申请日：2021-02-01

Applicant: Infineon Technologies AG

Inventor： Thomas Basler ,  Hans-Joachim Schulze ,  Ralf Siemieniec

IPC: H01L29/16 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L29/167 ,  H01L29/861 ,  H01L29/872 ,  H01L29/32 ,  H01L29/08

Abstract: A semiconductor component includes a semiconductor component, including: a merged PiN Schottky (MPS) diode structure in a SiC semiconductor body having a drift zone of a first conductivity type; an injection region of a second conductivity type adjoining a first surface of the SiC semiconductor body; a contact structure at the first surface, the contact structure forming a Schottky contact with the drift zone and electrically contacting the injection region; and a zone of the first conductivity type formed between the injection region and a second surface of the SiC semiconductor body, the second surface being situated opposite the first surface. The zone is at a maximal distance of 1 μm from the injection region of the second conductivity type.

公开(公告)号：US10950696B2

公开(公告)日：2021-03-16

申请号：US16281257

申请日：2019-02-21

Applicant: Infineon Technologies AG

Inventor： Thomas Basler ,  Hans-Joachim Schulze ,  Ralf Siemieniec

IPC: H01L29/16 ,  H01L29/78 ,  H01L29/06 ,  H01L29/66 ,  H01L29/167 ,  H01L29/861 ,  H01L29/872 ,  H01L29/32 ,  H01L29/08 ,  H01L29/417

Abstract: A semiconductor component includes a field effect transistor structure in a SiC semiconductor body having a gate structure at a first surface of the SiC semiconductor body and a drift zone of a first conductivity type. A zone of the first conductivity type is formed in a vertical direction between a semiconductor region of a second conductivity type and the drift zone. The zone is spaced apart from the gate structure and is at a maximal distance of 1 μm from the semiconductor region in the vertical direction.

公开(公告)号：US20210043555A1

公开(公告)日：2021-02-11

申请号：US16944303

申请日：2020-07-31

Applicant: Infineon Technologies AG

Inventor： Edward Fuergut ,  Thomas Basler ,  Reinhold Bayerer ,  Ivan Nikitin

IPC: H01L23/498 ,  H01L23/66 ,  H01L23/29 ,  H01L21/56 ,  H01L21/48

Abstract: An electronic device and method is disclosed. In one example, the electronic device includes an electrically insulating material, a first load electrode arranged on a first surface of the electrically insulating material, and a second load electrode arranged on a second surface of the electrically insulating material opposite to the first surface, wherein the load electrodes are separated by the electrically insulating material along the entire length on which the load electrodes have opposite sections, wherein surfaces of the load electrodes facing away from the electrically insulating material are uncovered by the electrically insulating material.

公开(公告)号：US20200286991A1

公开(公告)日：2020-09-10

申请号：US16811293

申请日：2020-03-06

Applicant: Infineon Technologies AG

Inventor： Thomas Basler ,  Caspar Leendertz ,  Hans-Joachim Schulze

IPC: H01L29/08 ,  H01L29/16 ,  H01L29/06 ,  H01L29/10 ,  H01L29/32 ,  H01L29/78 ,  H01L21/04 ,  H01L29/66

Abstract: An embodiment of a semiconductor device includes a silicon carbide semiconductor body including source and body regions of opposite conductivity types. A trench structure extends from a first surface into the silicon carbide semiconductor body along a vertical direction, and includes a gate electrode and a gate dielectric. A contact is electrically connected to the source region at the first surface. The source region includes a first source sub-region directly adjoining the contact at a source contact area of the first surface, a second source sub-region, and a third source sub-region. The second sub-region is arranged between the first and third sub-regions along the vertical direction. A doping concentration profile along the vertical direction of the source region includes a doping concentration minimum in the second sub-region and a doping concentration maximum in the third sub-region. Each of the second and third sub-regions overlaps with the source contact area.

公开(公告)号：US20190355815A1

公开(公告)日：2019-11-21

申请号：US16415365

申请日：2019-05-17

Applicant: Infineon Technologies AG

Inventor： Thomas Basler ,  Rudolf Elpelt ,  Hans-Joachim Schulze

IPC: H01L29/06 ,  H01L29/16

Abstract: The disclosure relates to a semiconductor component having an SiC semiconductor body and a first load terminal on a first surface of the SiC semiconductor body. A second load terminal is formed on a second surface of the SiC semiconductor body opposite the first surface. The semiconductor component has a drift zone of a first conductivity type in the SiC semiconductor body and a first semiconductor area of a second conductivity type which is electrically connected to the first load terminal. A pn junction between the drift zone and the first semiconductor area defines a voltage blocking strength of the semiconductor component.

公开(公告)号：US10475909B2

公开(公告)日：2019-11-12

申请号：US15608137

申请日：2017-05-30

Applicant: Infineon Technologies AG

Inventor： Thomas Basler ,  Roman Baburske ,  Daniel Domes ,  Johannes Georg Laven ,  Roland Rupp

IPC: H01L21/02 ,  H01L29/739 ,  H03K17/04 ,  H03K17/567

Abstract: An electric assembly includes a bipolar switching device and a transistor circuit. The transistor circuit is electrically connected in parallel with the bipolar switching device and includes a normally-on wide bandgap transistor.

公开(公告)号：US20190341447A1

公开(公告)日：2019-11-07

申请号：US16404284

申请日：2019-05-06

Applicant: Infineon Technologies AG

Inventor： Ralf Siemieniec ,  Thomas Aichinger ,  Thomas Basler ,  Wolfgang Bergner ,  Rudolf Elpelt ,  Romain Esteve ,  Michael Hell ,  Daniel Kueck ,  Caspar Leendertz ,  Dethard Peters ,  Hans-Joachim Schulze

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/10 ,  H01L21/04 ,  H01L29/66 ,  H01L29/16

Abstract: A semiconductor component has a gate structure that extends from a first surface into an SiC semiconductor body. A body area in the SiC semiconductor body adjoins a first side wall of the gate structure. A first shielding area and a second shielding area of the conductivity type of the body area have at least twice as high a level of doping as the body area. A diode area forms a Schottky contact with a load electrode between the first shielding area and the second shielding area.

公开(公告)号：US20180026548A1

公开(公告)日：2018-01-25

申请号：US15214994

申请日：2016-07-20

Applicant: Infineon Technologies AG

Inventor： Johannes Georg Laven ,  Heiko Rettinger ,  Roman Baburske ,  Uwe Jansen ,  Thomas Basler

IPC: H02M7/44 ,  H03K5/08 ,  H02M1/32

CPC classification number: H02M7/44 ,  H02M1/32 ,  H02M7/487 ,  H02M2001/0048 ,  H03K5/08

Abstract: A system and method for a power inverter with controllable clamps comprises a first voltage swing path, the first voltage swing path including a first plurality of power transistors, the first voltage swing path producing portions of a positive half-wave of an output signal when active; a second voltage swing path, the second voltage swing path including a second plurality of power transistors, the second voltage swing path producing portions of a negative half-wave of the output signal when active; a first clamping component coupled to the first voltage swing path, the first clamping component forming a freewheeling path for the first voltage swing path, the first clamping component comprising a control terminal, the first clamping component having a first stored charge when the control terminal is in a first state and a second stored charge when the control terminal is in a second state, the first stored charge being greater than the second stored charge; and a second clamping component coupled to the second voltage swing path, the second clamping component forming a freewheeling path for the second voltage swing path, the second clamping component comprising a control terminal, the second clamping component having the first stored charge when the control terminal is in the first state and the second stored charge when the control terminal is in the second state.