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    Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip
    41.
    发明授权
    Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip 失效
    自固定自旋阀传感器，其第一个AP固定层比第二个AP钉扎层厚，以降低幅度翻转的可能性

    公开(公告)号：US07466524B2

    公开(公告)日：2008-12-16

    申请号：US11301877

    申请日：2005-12-13

    申请人： James Mac Freitag ,  Hardayal Singh Gill ,  Jih-Shiuan Luo ,  Mustafa Michael Pinarbasi

    发明人： James Mac Freitag ,  Hardayal Singh Gill ,  Jih-Shiuan Luo ,  Mustafa Michael Pinarbasi

    IPC分类号： G11B5/127

    CPC分类号： G11B5/33 ,  G11B5/3932 ,  G11B2005/3996

    摘要： In one illustrative example, a spin valve (SV) sensor of the self-pinned type includes a free layer; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer having a first thickness; a second AP pinned layer having a second thickness; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. The first thickness is slightly greater than the second thickness. Configured as such, the AP pinned layer structure provides for a net magnetic moment that is in the same direction as a magnetic field produced by the sense current flow, which reduces the likelihood of amplitude flip in the SV sensor.

    摘要翻译： 在一个说明性示例中，自固定型的自旋阀（SV）传感器包括自由层; 反平行（AP）自固定层结构; 以及在自由层和AP自固位层结构之间的非磁性导电间隔层。 AP自固定层结构包括具有第一厚度的第一AP钉扎层; 具有第二厚度的第二AP钉扎层; 以及形成在第一和第二AP钉扎层之间的反平行耦合（APC）层。 第一厚度略大于第二厚度。 如此配置，AP钉扎层结构提供了与由感测电流产生的磁场方向相同的净磁矩，这降低了SV传感器中振幅翻转的可能性。

    Seedlayer for high hard bias layer coercivity
    42.
    发明授权
    Seedlayer for high hard bias layer coercivity 失效
    用于高硬偏置层矫顽力的种子层

    公开(公告)号：US07433163B2

    公开(公告)日：2008-10-07

    申请号：US11353341

    申请日：2006-02-13

    申请人： James Mac Freitag ,  Mohamad Towfik Krounbi ,  Mustafa Michael Pinarbasi

    发明人： James Mac Freitag ,  Mohamad Towfik Krounbi ,  Mustafa Michael Pinarbasi

    IPC分类号： G11B5/39

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/1278 ,  G11B5/3932 ,  G11B2005/0002 ,  H01F10/30 ,  H01F10/3254 ,  H01F41/302

    摘要： A seedlayer structure for a high coercivity hard bias layer is disclosed, having at least one bi-layer seedlayer, including a CrMo layer, and a W layer fabricated on the CrMo layer. A hard bias layer is fabricated on the bi-layer seedlayer. Preferably, the seedlayer structure includes two bi-layer seedlayers, which including a first CrMo layer, a first W layer fabricated on the first CrMo layer, a second CrMo layer fabricated on the first W layer, and a second W layer fabricated on the second CrMo layer. Also disclosed is a high coercivity hard bias stack structure, a magnetic read head for a disk drive having a high coercivity hard bias stack structure and a method for fabricating a coercivity hard bias layer for a magnetic read head.

    摘要翻译： 公开了一种用于高矫顽力硬偏置层的种子层结构，其具有至少一个双层种子层，包括CrMo层和在CrMo层上制造的W层。 在双层子层上制造硬偏置层。 优选地，种子层结构包括两个双层种子层，其包括第一CrMo层，在第一CrMo层上制造的第一W层，在第一W层上制造的第二CrMo层和在第二层上制造的第二W层 CrMo层。 还公开了高矫顽力硬偏置堆叠结构，用于具有高矫顽力硬偏置堆叠结构的磁盘驱动器的磁读头和用于制造磁读头的矫顽力硬偏置层的方法。

    MAGNETORESISTIVE SENSOR HAVING AN ANISOTROPIC HARD BIAS WITH HIGH COERCIVITY
    43.
    发明申请
    MAGNETORESISTIVE SENSOR HAVING AN ANISOTROPIC HARD BIAS WITH HIGH COERCIVITY 有权
    具有高可靠性的ANISOTROPIC硬偏差磁传感器

    公开(公告)号：US20080151441A1

    公开(公告)日：2008-06-26

    申请号：US11615825

    申请日：2006-12-22

    申请人： James Mac Freitag ,  Mustafa Michael Pinarbasi ,  Wipul Pemsiri Jayasekara

    发明人： James Mac Freitag ,  Mustafa Michael Pinarbasi ,  Wipul Pemsiri Jayasekara

    IPC分类号： G11B5/33 ,  B05D5/12

    CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932

    摘要： A magnetoresistive sensor having magnetically anisotropic bias layers for biasing the free layer of the sensor. The sensor includes a sensor stack with a pinned layer structure and a free layer structure and having first and second sides. Hard bias structures for biasing the magnetization of the free layer are formed at either side of the sensor stack, and each of the hard bias structure includes a hard magnetic layer that has a magnetic anisotropy to enhance the stability of the biasing. The hard bias structure can include a Cr under-layer having a surface that has been treated by a low power angled ion milling to form it with an anisotropic surface texture. A layer of Cr—Mo alloy is formed over the Cr under-layer and the hard magnetic material layer is formed over the Cr—Mo alloy layer. The anisotropic surface texture of the Cr layer induces an aligned crystalline structure in the hard magnetic layer that causes the hard magnetic layer to have a magnetic anisotropy. In another embodiment, the hard bias structure can include a layer of Ta that has a surface formed with the anisotropic roughness. A layer of Cr—Mo alloy is formed over the Ta layer and the hard magnetic layer is formed over the Cr—Mo alloy layer. In yet another embodiment, the hard bias structure includes first and second Ta layers with a Si layer sandwiched between them. The second Ta layer has a surface treated with the anisotropic texture. A layer of Cr—Mo alloy can then be formed over the second Ta layer and the hard magnetic material formed over the Cr—Mo alloy layer.

    摘要翻译： 具有用于偏置传感器自由层的磁各向异性偏置层的磁阻传感器。 传感器包括具有钉扎层结构和自由层结构并具有第一和第二侧面的传感器堆叠。 在传感器堆叠的任一侧形成用于偏置自由层的磁化的硬偏置结构，并且每个硬偏置结构都包括具有磁各向异性以增强偏置稳定性的硬磁性层。 硬偏压结构可以包括具有通过低功率角度离子铣削处理以形成各向异性表面纹理的表面的Cr底层。 在Cr底层上形成Cr-Mo合金层，在Cr-Mo合金层上形成硬磁性体层。 Cr层的各向异性表面结构在硬磁性层中引起对准的结晶结构，使得硬磁性层具有磁各向异性。 在另一个实施例中，硬偏压结构可以包括具有由各向异性粗糙度形成的表面的Ta层。 在Ta层上形成一层Cr-Mo合金，在Cr-Mo合金层上形成硬磁性层。 在另一个实施例中，硬偏置结构包括夹在它们之间的Si层的第一和第二Ta层。 第二Ta层具有用各向异性结构处理的表面。 然后可以在第二Ta层上形成Cr-Mo合金层，并在Cr-Mo合金层上形成硬磁性材料。

    Magnetic recording head with overlaid leads
    44.
    发明申请
    Magnetic recording head with overlaid leads 有权
    带重叠导线的磁记录头

    公开(公告)号：US20080112090A1

    公开(公告)日：2008-05-15

    申请号：US11595186

    申请日：2006-11-09

    申请人： James Mac Freitag ,  David Eugene Heim ,  Kuok San Ho ,  Wipul Pemsiri Jayasekara ,  Kim Y. Lee ,  Tsann Lin ,  Jyh-Shuey Lo ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

    发明人： James Mac Freitag ,  David Eugene Heim ,  Kuok San Ho ,  Wipul Pemsiri Jayasekara ,  Kim Y. Lee ,  Tsann Lin ,  Jyh-Shuey Lo ,  Mustafa Michael Pinarbasi ,  Ching Hwa Tsang

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3932 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996

    摘要： A lead overlay design of a magnetic sensor is described with sensor and free layer dimensions such that the free layer is stabilized by the large demagnetization field due to the shape anisotropy. In one embodiment the giant magnetoresistive (GMR) effect under the leads is destroyed by removing the antiferromagnetic (AFM) and pinned layers above the free layer. The overlaid lead pads are deposited on the exposed spacer layer at the sides of the mask that defines the active region. In other embodiment a layer of electrically insulating material is deposited over the sensor to encapsulate it and thereby insulate it from contact with the hardbias structures. Various embodiments with self-aligned leads are also described. In a variation of the encapsulation embodiment, the insulating material is also deposited under the lead pads so the electrical current is channeled through the active region of the sensor and sidewall deposited lead pads.

    摘要翻译： 用传感器和自由层尺寸描述磁传感器的引线覆盖设计，使得由于形状各向异性，自由层由大的退磁场稳定。 在一个实施例中，引线下的巨磁阻（GMR）效应通过去除自由层上方的反铁磁（AFM）和固定层而被破坏。 覆盖的引线焊盘沉积在限定有源区的掩模侧面上的暴露间隔层上。 在另一个实施例中，电绝缘材料层沉积在传感器上以将其封装并由此使其与硬质合金结构的接触绝缘。 还描述了具有自对准引线的各种实施例。 在封装实施例的变型中，绝缘材料也沉积在引线焊盘下方，使得电流通过传感器的有源区域和侧壁沉积的引线焊盘。

    Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip
    45.
    发明授权
    Self-pinned spin valve sensor having its first AP pinned layer thicker than its second AP pinned layer to reduce the likelihood of amplitude flip 失效
    自固定自旋阀传感器，其第一个AP固定层比第二个AP钉扎层厚，以降低幅度翻转的可能性

    公开(公告)号：US07019949B2

    公开(公告)日：2006-03-28

    申请号：US10732200

    申请日：2003-12-10

    申请人： James Mac Freitag ,  Hardayal Singh Gill ,  Jih-Shiuan Luo ,  Mustafa Michael Pinarbasi

    发明人： James Mac Freitag ,  Hardayal Singh Gill ,  Jih-Shiuan Luo ,  Mustafa Michael Pinarbasi

    IPC分类号： G11B5/127

    CPC分类号： G11B5/33 ,  G11B5/3932 ,  G11B2005/3996

    摘要： In one illustrative example, a spin valve (SV) sensor of the self-pinned type includes a free layer; an antiparallel (AP) self-pinned layer structure; and a non-magnetic electrically conductive spacer layer in between the free layer and the AP self-pinned layer structure. The AP self-pinned layer structure includes a first AP pinned layer having a first thickness; a second AP pinned layer having a second thickness; and an antiparallel coupling (APC) layer formed between the first and the second AP pinned layers. The first thickness is slightly greater than the second thickness. Configured as such, the AP pinned layer structure provides for a net magnetic moment that is in the same direction as a magnetic field produced by the sense current flow, which reduces the likelihood of amplitude flip in the SV sensor.

    摘要翻译： 在一个说明性示例中，自固定型的自旋阀（SV）传感器包括自由层; 反平行（AP）自固定层结构; 以及在自由层和AP自固位层结构之间的非磁性导电间隔层。 AP自固定层结构包括具有第一厚度的第一AP钉扎层; 具有第二厚度的第二AP钉扎层; 以及形成在第一和第二AP钉扎层之间的反平行耦合（APC）层。 第一厚度略大于第二厚度。 如此配置，AP钉扎层结构提供了与由感测电流产生的磁场方向相同的净磁矩，这降低了SV传感器中振幅翻转的可能性。

    MAGNETORESISTIVE SENSOR WITH NITROGENATED HARD BIAS LAYER FOR IMPROVED COERCIVITY
    46.
    发明申请
    MAGNETORESISTIVE SENSOR WITH NITROGENATED HARD BIAS LAYER FOR IMPROVED COERCIVITY 有权
    具有氮化偏碳酸盐的磁阻传感器，用于改进合格

    公开(公告)号：US20090154032A1

    公开(公告)日：2009-06-18

    申请号：US11959327

    申请日：2007-12-18

    申请人： James Mac Freitag

    发明人： James Mac Freitag

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3932 ,  G01R33/1284

    摘要： A magnetoresistive sensor having a hard bias structure that provides improved bias field robustness. The sensor includes a nitrogenated hard bias layer and a seed layer that include a nitrogenated NiTa layer and a layer of Ru. The seed layer can also include a layer of CrMn disposed between the layer of NiTa and the layer of Ru. The novel seed structure allows a nitrogenated hard bias layer to be used, while maintaining a high magnetic coercivity of the hard bias layer.

    摘要翻译： 具有硬偏置结构的磁阻传感器，其提供改进的偏置场稳健性。 传感器包括氮化的硬偏压层和包含氮化的NiTa层和Ru层的种子层。 种子层还可以包括设置在NiTa层和Ru层之间的CrMn层。 新颖的种子结构允许使用氮化的硬偏压层，同时保持硬偏压层的高磁矫顽力。

    Pinning layer seeds for CPP geometry spin valve sensors
    50.
    发明授权
    Pinning layer seeds for CPP geometry spin valve sensors 失效
    CPP几何自旋阀传感器固定层种子

    公开(公告)号：US06624985B1

    公开(公告)日：2003-09-23

    申请号：US10040613

    申请日：2002-01-07

    申请人： James Mac Freitag ,  Mustafa Pinarbasi

    发明人： James Mac Freitag ,  Mustafa Pinarbasi

    IPC分类号： G11B539

    CPC分类号： B82Y10/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3967

    摘要： A CPP geometry spin valve sensor for sensing magnetically recorded information on a data storage medium includes an electrically conductive, multilevel seed layer that interfacially engages a pinning layer of the sensor and increases the sensor's magnetoresistance while maintaining acceptable values of free layer coercivity, pinned-free layer magnetic coupling and free layer magnetostriction.

    摘要翻译： 用于在数据存储介质上感测磁记录信息的CPP几何自旋阀传感器包括导电的多电平种子层，其与传感器的钉扎层接合，并增加传感器的磁阻，同时保持可接受的自由层矫顽力值，无固定 层磁耦合和自由层磁致伸缩。