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    Methods of making a read sensor with use of a barrier structure for depositing materials
    1.
    发明授权
    Methods of making a read sensor with use of a barrier structure for depositing materials 失效
    使用用于沉积材料的阻挡结构制造读取传感器的方法

    公开(公告)号：US07070697B2

    公开(公告)日：2006-07-04

    申请号：US10413322

    申请日：2003-04-14

    申请人： James Mac Freitag ,  Kim Yang Lee ,  Mustafa Pinarbasi ,  Chun-Ming Albert Wang

    发明人： James Mac Freitag ,  Kim Yang Lee ,  Mustafa Pinarbasi ,  Chun-Ming Albert Wang

    IPC分类号： B44C1/22 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3133 ,  G11B5/3163 ,  G11B5/332 ,  G11B2005/3996 ,  Y10T29/49052

    摘要： In one illustrative example, a method of making a read sensor of a magnetic head involves forming a barrier structure which surrounds a central mask formed over a plurality of read sensor layers; etching the read sensor layers to form the read sensor below the mask; and depositing, with use of the mask and the barrier structure, hard bias and lead layers to form around the read sensor. The barrier structure may be formed by, for example, depositing one or more barrier structure layers over the read sensor layers and performing a photolithography process. The barrier structure physically blocks materials being deposited at relatively low angles (e.g. angles at or below 71 degrees) so as to reduce their formation far underneath the mask (e.g. when using a bridged mask), which could otherwise form an electrical short, and/or to improve the symmetry of the deposited materials around the read sensor.

    摘要翻译： 在一个说明性示例中，制造磁头的读取传感器的方法包括形成围绕形成在多个读取传感器层上的中心掩模的阻挡结构; 蚀刻读取传感器层以在掩模下方形成读取传感器; 并且使用掩模和阻挡结构沉积硬偏压和引线层，以在读取传感器周围形成。 阻挡结构可以通过例如在读取的传感器层上沉积一个或多个势垒结构层并执行光刻工艺来形成。 阻挡结构物理地阻挡以相对小的角度（例如在71度或以下的角度）沉积的材料，以便减小它们在掩模下方的形成（例如，当使用桥接掩模时），否则其可能形成电短路，和/ 或者改善读取传感器周围的沉积材料的对称性。

    Exchange biased self-pinned spin valve sensor with recessed overlaid leads
    2.
    发明授权
    Exchange biased self-pinned spin valve sensor with recessed overlaid leads 失效
    交替偏置自锁自旋阀传感器，带有凹进的重叠导线

    公开(公告)号：US06744607B2

    公开(公告)日：2004-06-01

    申请号：US10104457

    申请日：2002-03-21

    申请人： James Mac Freitag ,  Mustafa Pinarbasi ,  Patrick Rush Webb

    发明人： James Mac Freitag ,  Mustafa Pinarbasi ,  Patrick Rush Webb

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3903 ,  G11B2005/3996

    摘要： A spin valve sensor includes an antiparallel (AP) pinned layer structure which is self-pinned without the assistance of an antiferromagnetic (AFM) pinning layer. A free layer of the spin valve sensor has first and second wing portions which extend laterally beyond a track width of the spin valve sensor and are exchange coupled to first and second AFM pinning layers. Magnetic moments of the wing portions of the free layer are pinned parallel to the ABS and parallel to major planes of the layers of the sensor for magnetically stabilizing the central portion of the free layer which is located within the track width. The spin valve sensor has a central portion that extends between the first and second AFM layers. First and second lead layers overlay the first and second AFM layers and further overlay first and second portions of the central portion so that a distance between the first and second lead layers defines a track width that is less than a distance between the first and second AFM layers. The spin valve sensor has a cap layer structure that has a full thickness portion which is located between first and second reduced thickness portions and the first and second lead layers engage the cap layer structure within the first and second reduced thickness portions.

    摘要翻译： 自旋阀传感器包括反并联（AP）钉扎层结构，其在没有反铁磁（AFM）钉扎层的帮助下是自固定的。 自旋阀传感器的自由层具有横向延伸超过自旋阀传感器的轨道宽度的第一和第二翼部分，并且交换耦合到第一和第二AFM钉扎层。 自由层的翼部的磁矩被平行于ABS并且平行于传感器的各层的主平面固定，以磁化地稳定位于轨道宽度内的自由层的中心部分。 自旋阀传感器具有在第一和第二AFM层之间延伸的中心部分。 第一和第二引线层覆盖第一和第二AFM层，并进一步覆盖中心部分的第一和第二部分，使得第一和第二引线层之间的距离限定小于第一和第二AFM之间的距离的轨道宽度 层。 自旋阀传感器具有盖层结构，其具有位于第一和第二厚度减小部分之间的全部厚度部分，并且第一和第二引线层与第一和第二厚度部分内的盖层结构接合。

    Pinning layer seeds for CPP geometry spin valve sensors
    6.
    发明授权
    Pinning layer seeds for CPP geometry spin valve sensors 失效
    CPP几何自旋阀传感器固定层种子

    公开(公告)号：US06624985B1

    公开(公告)日：2003-09-23

    申请号：US10040613

    申请日：2002-01-07

    申请人： James Mac Freitag ,  Mustafa Pinarbasi

    发明人： James Mac Freitag ,  Mustafa Pinarbasi

    IPC分类号： G11B539

    CPC分类号： B82Y10/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3967

    摘要： A CPP geometry spin valve sensor for sensing magnetically recorded information on a data storage medium includes an electrically conductive, multilevel seed layer that interfacially engages a pinning layer of the sensor and increases the sensor's magnetoresistance while maintaining acceptable values of free layer coercivity, pinned-free layer magnetic coupling and free layer magnetostriction.

    摘要翻译： 用于在数据存储介质上感测磁记录信息的CPP几何自旋阀传感器包括导电的多电平种子层，其与传感器的钉扎层接合，并增加传感器的磁阻，同时保持可接受的自由层矫顽力值，无固定 层磁耦合和自由层磁致伸缩。

    Method and apparatus for enhanced dual spin valve giant magnetoresistance effects having second spin valve self-pinned composite layer
    8.
    发明授权
    Method and apparatus for enhanced dual spin valve giant magnetoresistance effects having second spin valve self-pinned composite layer 有权
    具有第二自旋阀自固定复合层的增强双自旋阀巨磁阻效应的方法和装置

    公开(公告)号：US07038889B2

    公开(公告)日：2006-05-02

    申请号：US10260971

    申请日：2002-09-30

    申请人： James Mac Freitag ,  Hardayal Singh Gill ,  Mustafa Pinarbasi

    发明人： James Mac Freitag ,  Hardayal Singh Gill ,  Mustafa Pinarbasi

    IPC分类号： G11B5/39

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/00 ,  G11B5/313 ,  G11B5/3903 ,  G11B5/3954

    摘要： A dual spin valve giant magnetoresistance (GMR) sensor having two spin valves with the second spin valve being self-biased is disclosed herein. According to the present invention a dual spin valve system is disclosed wherein the first of the two spin valves in the dual spin valve element is pinned through exchange coupling, i.e., a first anti-ferromagnetic pinning layer and a first ferromagnetic pinned layer structure are exchange coupled for pinning the first magnetic moment of the first ferromagnetic pinned layer structure in a first direction. The second of the two spin valves in the dual spin valve system is self-pinned. The self-pinned spin valve does not use any anti-ferromagnetic layers to pin the magnetization of the pinned layers.

    摘要翻译： 本文公开了具有两个自旋阀的双自旋阀巨磁电阻（GMR）传感器，其中第二自旋阀是自偏压的。 根据本发明，公开了一种双自旋阀系统，其中双自旋阀元件中的两个自旋阀中的第一个通过交换耦合被钉扎，即，第一反铁磁钉扎层和第一铁磁钉扎层结构是交换 耦合以将第一铁磁性钉扎层结构的第一磁矩固定在第一方向上。 双自旋阀系统中的两个自旋阀中的第二个是自固定的。 自锁自旋阀不使用任何反铁磁层来固定被钉扎层的磁化。

    Spin valve sensor with dual self-pinned AP pinned layer structures
    9.
    发明授权
    Spin valve sensor with dual self-pinned AP pinned layer structures 失效
    旋转阀传感器具有双自动固定AP固定层结构

    公开(公告)号：US06785102B2

    公开(公告)日：2004-08-31

    申请号：US10125941

    申请日：2002-04-18

    申请人： James Mac Freitag ,  Hardayal Singh Gill ,  Mustafa Pinarbasi

    发明人： James Mac Freitag ,  Hardayal Singh Gill ,  Mustafa Pinarbasi

    IPC分类号： G11B539

    CPC分类号： B82Y10/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3967

    摘要： A spin valve sensor includes a free layer structure which is located between first and second spacer layers and the first and second spacer layers are located between first and second AP pinned layer structures. Each of the AP pinned layer structures has first and second AP pinned layers with the first AP pinned layer of the first AP pinned layer structure interfacing the first spacer layer and the first AP pinned layer of the second AP pinned layer structure interfacing the second spacer layer. The magnetic thickness of each of the first AP pinned layers is either greater or less than the magnetic thickness of either of the second AP pinned layers of the first and second AP pinned layer structures so that a magnetic field oriented perpendicular to an air bearing surface (ABS) of the sensor sets the magnetic moments of the first and second AP pinned layer structures in-phase so that changes in resistances of the sensor upon rotation of a magnetic moment of the free layer structure is additive.

    摘要翻译： 自旋阀传感器包括位于第一和第二间隔层之间的自由层结构，并且第一和第二间隔层位于第一和第二AP钉扎层结构之间。 AP被钉扎层结构中的每一个具有第一和第二AP钉扎层，其中第一AP钉扎层结构的第一AP钉扎层与第一间隔层和第二AP钉扎层结构的第一AP钉扎层相接， 。 第一AP钉扎层中的每一个的磁性厚度大于或小于第一和第二AP钉扎层结构的第二AP钉扎层中的任一个的磁性厚度，使得垂直于空气支承表面（ ABS）将第一和第二AP钉扎层结构的磁矩同相设置，使得自由层结构的磁矩旋转时传感器的电阻的变化是相加的。