公开(公告)号：US08747552B2

公开(公告)日：2014-06-10

申请号：US12642182

申请日：2009-12-18

申请人： Glen A. Slack ,  Leo J. Schowalter

发明人： Glen A. Slack ,  Leo J. Schowalter

IPC分类号： C30B29/38

CPC分类号： H01L29/207 ,  C30B23/00 ,  C30B29/403 ,  H01L21/0254 ,  H01L21/02579 ,  H01L21/2258 ,  H01L29/2003 ,  H01L33/325

摘要： Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.

摘要翻译： 具有高导电性和迁移率的掺杂AlN晶体和/或AlGaN外延层的制备通过例如形成包括多个杂质物质的混合晶体并电激活至少一部分晶体来实现。

公开(公告)号：US08123859B2

公开(公告)日：2012-02-28

申请号：US12841350

申请日：2010-07-22

申请人： Leo J. Schowalter ,  Glen A. Slack ,  J. Carlos Rojo

发明人： Leo J. Schowalter ,  Glen A. Slack ,  J. Carlos Rojo

IPC分类号： C30B29/04

CPC分类号： C30B23/00 ,  C30B11/003 ,  C30B29/403 ,  H01L33/0075 ,  H01L33/025 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and apparatus for producing bulk single crystals of AlN having low dislocation densities of about 10,000 cm−2 or less includes a crystal growth enclosure with Al and N2 source material therein, capable of forming bulk crystals. The apparatus maintains the N2 partial pressure at greater than stoichiometric pressure relative to the Al within the crystal growth enclosure, while maintaining the total vapor pressure in the crystal growth enclosure at super-atmospheric pressure. At least one nucleation site is provided in the crystal growth enclosure, and provision is made for cooling the nucleation site relative to other locations in the crystal growth enclosure. The Al and N2 vapor is then deposited to grow single crystalline low dislocation density AlN at the nucleation site. High efficiency ultraviolet light emitting diodes and ultraviolet laser diodes are fabricated on low defect density AlN substrates, which are cut from the low dislocation density AlN crystals. Bulk crystals of ZnO may also be produced using the method.

摘要翻译： 具有约10,000cm-2或更低位错密度的AlN的本体单晶的方法和装置包括其中具有Al和N2源材料的晶体生长外壳，其能够形成本体晶体。 该装置相对于晶体生长封壳内的Al保持大于化学计量压力的N2分压，同时在超大气压力下保持晶体生长封壳中的总蒸气压。 在晶体生长封壳中提供至少一个成核位置，并且提供相对于晶体生长封壳中的其它位置来冷却成核位置。 然后沉积Al和N 2蒸气以在成核位点生长单晶低位错密度AlN。 在低缺陷密度AlN衬底上制造高效紫外发光二极管和紫外激光二极管，其从低位错密度AlN晶体切割。 也可以使用该方法制造ZnO的块状晶体。

公开(公告)号：US20110011332A1

公开(公告)日：2011-01-20

申请号：US12841350

申请日：2010-07-22

申请人： Leo J. Schowalter ,  Glen A. Slack ,  J. Carlos Rojo

发明人： Leo J. Schowalter ,  Glen A. Slack ,  J. Carlos Rojo

IPC分类号： C30B25/02

CPC分类号： C30B23/00 ,  C30B11/003 ,  C30B29/403 ,  H01L33/0075 ,  H01L33/025 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and apparatus for producing bulk single crystals of AlN having low dislocation densities of about 10,000 cm−2 or less includes a crystal growth enclosure with Al and N2 source material therein, capable of forming bulk crystals. The apparatus maintains the N2 partial pressure at greater than stoichiometric pressure relative to the Al within the crystal growth enclosure, while maintaining the total vapor pressure in the crystal growth enclosure at super-atmospheric pressure. At least one nucleation site is provided in the crystal growth enclosure, and provision is made for cooling the nucleation site relative to other locations in the crystal growth enclosure. The Al and N2 vapor is then deposited to grow single crystalline low dislocation density AlN at the nucleation site. High efficiency ultraviolet light emitting diodes and ultraviolet laser diodes are fabricated on low defect density AlN substrates, which are cut from the low dislocation density AlN crystals. Bulk crystals of ZnO may also be produced using the method.

摘要翻译： 具有约10,000cm-2或更低位错密度的AlN的本体单晶的方法和装置包括其中具有Al和N2源材料的晶体生长外壳，其能够形成本体晶体。 该装置相对于晶体生长封壳内的Al保持大于化学计量压力的N2分压，同时在超大气压力下保持晶体生长封壳中的总蒸气压。 在晶体生长封壳中提供至少一个成核位置，并且提供相对于晶体生长封壳中的其它位置来冷却成核位置。 然后沉积Al和N 2蒸气以在成核位点生长单晶低位错密度AlN。 在低缺陷密度AlN衬底上制造高效紫外发光二极管和紫外激光二极管，其从低位错密度AlN晶体切割。 也可以使用该方法制造ZnO的块状晶体。

公开(公告)号：US20110008621A1

公开(公告)日：2011-01-13

申请号：US12827507

申请日：2010-06-30

申请人： Sandra B. Schujman ,  Shailaja P. Rao ,  Robert T. Bondokov ,  Kenneth E. Morgan ,  Glen A. Slack ,  Leo J. Schowalter

发明人： Sandra B. Schujman ,  Shailaja P. Rao ,  Robert T. Bondokov ,  Kenneth E. Morgan ,  Glen A. Slack ,  Leo J. Schowalter

IPC分类号： C30B23/00 ,  C01F7/00

CPC分类号： C30B23/066 ,  C30B23/00 ,  C30B23/002 ,  C30B23/02 ,  C30B29/403 ,  C30B33/02 ,  C30B35/00 ,  H01L21/02389 ,  Y10T428/2982

摘要： In various embodiments, methods of forming single-crystal AlN include providing a substantially undoped polycrystalline AlN ceramic having an oxygen concentration less than approximately 100 ppm, forming a single-crystal bulk AlN crystal by a sublimation-recondensation process at a temperature greater than approximately 2000° C., and cooling the bulk AlN crystal to a first temperature between approximately 1500° C. and approximately 1800° C. at a first rate less than approximately 250° C./hour.

摘要翻译： 在各种实施方案中，形成单晶AlN的方法包括提供氧浓度小于约100ppm的基本上未掺杂的多晶AlN陶瓷，通过升华 - 重新缩合工艺在大于约2000℃的温度下形成单晶体AlN晶体 ℃，并以大约250℃/小时的第一速率将本体AlN晶体冷却至约1500℃至约1800℃的第一温度。

公开(公告)号：US07638346B2

公开(公告)日：2009-12-29

申请号：US11503660

申请日：2006-08-14

申请人： Leo J. Schowalter ,  Joseph A. Smart ,  Shiwen Liu ,  Kenneth E. Morgan ,  Robert T. Bondokov ,  Timothy J. Bettles ,  Glen A. Slack

发明人： Leo J. Schowalter ,  Joseph A. Smart ,  Shiwen Liu ,  Kenneth E. Morgan ,  Robert T. Bondokov ,  Timothy J. Bettles ,  Glen A. Slack

IPC分类号： H01L21/00

CPC分类号： H01L33/0075 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0251 ,  H01L21/0254 ,  H01L2924/0002 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/04 ,  H01L2924/00

摘要： Semiconductor structures and devices based thereon include an aluminum nitride single-crystal substrate and at least one layer epitaxially grown thereover. The epitaxial layer may comprise at least one of AlN, GaN, InN, or any binary or tertiary alloy combination thereof, and have an average dislocation density within the semiconductor heterostructure is less than about 106 cm−2.

摘要翻译： 基于其的半导体结构和器件包括氮化铝单晶衬底和在其上外延生长的至少一层。 外延层可以包括AlN，GaN，InN或其任何二元或三元合金组合中的至少一种，并且半导体异质结构内的平均位错密度小于约106cm -2。

公开(公告)号：US10697085B2

公开(公告)日：2020-06-30

申请号：US16160158

申请日：2018-10-15

申请人： Robert T. Bondokov ,  Kenneth E. Morgan ,  Leo J. Schowalter ,  Glen A. Slack

发明人： Robert T. Bondokov ,  Kenneth E. Morgan ,  Leo J. Schowalter ,  Glen A. Slack

IPC分类号： C30B23/00 ,  C30B23/02 ,  C30B29/40 ,  H01L21/02

摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≤100 cm=2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

公开(公告)号：US10692980B2

公开(公告)日：2020-06-23

申请号：US16055228

申请日：2018-08-06

申请人： Glen A. Slack ,  Leo J. Schowalter

发明人： Glen A. Slack ,  Leo J. Schowalter

IPC分类号： C30B29/38 ,  H01L29/207 ,  C30B23/00 ,  C30B29/40 ,  H01L29/20 ,  H01L21/02 ,  H01L21/225 ,  H01L33/32

摘要： Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals including a plurality of impurity species and electrically activating at least a portion of the crystal.

公开(公告)号：US20170191184A1

公开(公告)日：2017-07-06

申请号：US15463536

申请日：2017-03-20

申请人： Robert T. Bondokov ,  Kenneth E. Morgan ,  Leo J. Schowalter ,  Glen A. Slack

发明人： Robert T. Bondokov ,  Kenneth E. Morgan ,  Leo J. Schowalter ,  Glen A. Slack

IPC分类号： C30B23/02 ,  C30B29/40

CPC分类号： C30B23/025 ,  C30B23/00 ,  C30B29/403 ,  H01L21/02389 ,  Y10T428/2982

摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

公开(公告)号：US09624601B2

公开(公告)日：2017-04-18

申请号：US14458861

申请日：2014-08-13

申请人： Robert T. Bondokov ,  Kenneth E. Morgan ,  Leo J. Schowalter ,  Glen A. Stack

发明人： Robert T. Bondokov ,  Kenneth E. Morgan ,  Leo J. Schowalter ,  Glen A. Stack

IPC分类号： C30B23/00 ,  C30B23/02 ,  C30B29/40 ,  H01L21/02

CPC分类号： C30B23/025 ,  C30B23/00 ,  C30B29/403 ,  H01L21/02389 ,  Y10T428/2982

摘要： Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density≦100 cm−2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

公开(公告)号：US09580833B2

公开(公告)日：2017-02-28

申请号：US14686812

申请日：2015-04-15

申请人： Robert T. Bondokov ,  Shailaja P. Rao ,  Shawn R. Gibb ,  Leo J. Schowalter

发明人： Robert T. Bondokov ,  Shailaja P. Rao ,  Shawn R. Gibb ,  Leo J. Schowalter

IPC分类号： C30B23/06 ,  C30B23/00 ,  C30B29/40

CPC分类号： C30B23/002 ,  C30B23/06 ,  C30B29/403

摘要： In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.

摘要翻译： 在各种实施例中，在形成半导体晶体期间，在两个热梯度（平行于垂直）的比率小于10的生长室内形成基本平行且基本垂直于生长方向的生长室内的非零热梯度，其中两个热梯度（平行于垂直）的比例小于10， ，例如在生长室外设置热屏蔽。