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公开(公告)号：US08232586B2
公开(公告)日：2012-07-31
申请号：US12539821
申请日：2009-08-12
IPC分类号： H01L31/101
CPC分类号： H01L31/113
摘要： A silicon photon detector device and methodology are provided for detecting incident photons in a partially depleted floating body SOI field-effect transistor (310) which traps charges created by visible and mid infrared light in a floating body region (304) when the silicon photon detector is configured in a detect mode, and then measures or reads the resulting enhanced drain current with a current detector in a read mode.
摘要翻译： 提供硅光子检测器装置和方法，用于在部分耗尽的浮体SOI场效应晶体管（310）中检测入射光子，该场效应晶体管（310）在硅光子检测器（310）捕获由浮动体区域（304）中的可见光和中红外光产生的电荷 被配置在检测模式中，然后在读取模式下用电流检测器测量或读取所得到的增强的漏极电流。
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公开(公告)号：US07235800B1
公开(公告)日：2007-06-26
申请号：US09583617
申请日：2000-05-31
IPC分类号： G01R31/305 , G01R31/02
CPC分类号： G01R31/307
摘要： Analysis of a semiconductor die having silicon-on-insulator (SOI) structure is enhanced by accessing the circuitry within the die from the back side without necessarily breaching or needing to breach the thin insulator layer of the SOI structure. According to an example embodiment of the present invention, a portion of substrate is removed from the back side of a semiconductor die having a SOI structure and a backside opposite circuitry in a circuit side. An exposed region is formed where the substrate has been removed. A detectable response from the exposed region is induced, for example, by an electron beam, as a function of a portion of the active circuitry within the die.
摘要翻译： 具有绝缘体上硅（SOI）结构的半导体管芯的分析通过从背面访问管芯内的电路而不必破坏或需要破坏SOI结构的薄绝缘体来增强。 根据本发明的示例性实施例，从电路侧的具有SOI结构和背面相反电路的半导体管芯的背面去除衬底的一部分。 在衬底被去除的地方形成曝光区域。 来自暴露区域的可检测的响应例如通过电子束被引发，作为管芯内有源电路的一部分的函数。
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公开(公告)号：US06894518B1
公开(公告)日：2005-05-17
申请号：US10113780
申请日：2002-03-29
IPC分类号： G01R31/311 , G01R31/26
CPC分类号： G01R31/311
摘要： Circuitry within a semiconductor die is analyzed by applying an electric field without necessarily directly accessing the circuitry. According to an example embodiment of the present invention, an electric field is applied to a semiconductor die and used to stimulate circuitry therein. A photoemission response of the die to the electric field is detected and used to detect an electrical characteristic of the die. This is particularly useful in applications where it is desired to direct stimulation to the die from an external source and to also externally detect a response of the die to the stimulation. In this manner, the die can be tested without necessarily directly contacting the die and, when the electric field is applied in a scanning mode over the die, can be effected without necessarily knowing the location of a defect in the die.
摘要翻译： 通过施加电场来分析半导体管芯内的电路，而不必直接访问电路。 根据本发明的示例性实施例，电场被施加到半导体管芯并且用于在其中刺激电路。 检测芯片对电场的光电子发射响应并用于检测管芯的电特性。 这尤其适用于需要从外部源引导模头的刺激并且还从外部检测模具对刺激的反应的应用中。 以这种方式，可以测试管芯而不必直接接触管芯，并且当以扫描模式在管芯上施加电场时，可以不必知道管芯中缺陷的位置而进行。
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公开(公告)号：US06716683B1
公开(公告)日：2004-04-06
申请号：US09887638
申请日：2001-06-22
IPC分类号： H01L2100
CPC分类号： G01R31/311 , G01N21/66
摘要： An integrated circuit die having silicon on insulator (SOI) structure is analyzed in a manner that enhances the ability to detect photoemissions from the die. According to an example embodiment of the present invention, one of two or more lenses having a higher relative photon count is identified and used to analyze a semiconductor die. The die has at least a portion of the insulator of the SOI structure exposed, and photon emissions are detected using each lens via the exposed insulator in response to the die being stimulated. The number of photons detected using each lens is compared, and the lens having a higher photon count rate is identified, optimizing the photon count for the particular type of die preparation used to expose the insulator. The identified lens is then used with the high-speed detector to detect photoemissions from the die, and the detected photoemissions are used to analyze the die.
摘要翻译： 分析具有绝缘体上硅（SOI）结构的集成电路芯片，以提高从模具检测光电发射的能力。 根据本发明的示例性实施例，识别出具有较高相对光子计数的两个或更多个透镜中的一个，并用于分析半导体管芯。 裸片具有暴露的SOI结构的绝缘体的至少一部分，并且响应于被激励的裸片，经由暴露的绝缘体使用每个透镜来检测光子发射。 比较使用每个透镜检测的光子的数量，并且识别具有较高光子计数率的透镜，优化用于暴露绝缘体的特定类型的模具制备的光子计数。 然后将识别的透镜与高速检测器一起使用以检测来自管芯的光电发射，并且使用检测到的光电管来分析管芯。
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公开(公告)号：US06653849B1
公开(公告)日：2003-11-25
申请号：US09864708
申请日：2001-05-23
IPC分类号： G01R3102
CPC分类号： G01R31/31705 , G01R31/307 , G01R31/3177
摘要： Analysis of a semiconductor die having silicon-on-insulator (SOI) structure is enhanced by accessing the circuitry within the die from the back side without breaching the thin insulator layer of the SOI structure. According to an example embodiment, a portion of substrate is removed from the hack side of a semiconductor die having a SOI structure and a backside opposite circuitry in a circuit side. Electrical connection is made to a portion of the circuitry within the die via a capacitive coupling arrangement. The electrical connection is used to obtain an electrical measurement from the die that is used for analysis.
摘要翻译： 通过从背面访问管芯内的电路而不破坏SOI结构的薄绝缘体层来增强具有绝缘体上硅（SOI）结构的半导体管芯的分析。 根据示例性实施例，从电路侧具有SOI结构和背面相对电路的半导体芯片的背面侧去除衬底的一部分。 通过电容耦合装置对管芯内的电路的一部分进行电连接。 电气连接用于从用于分析的管芯获得电气测量。
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46.发明授权Single point high resolution time resolved photoemission microscopy system and method 有权单点高分辨率时间分辨光电子显微镜系统及方法公开(公告)号：US06608494B1
公开(公告)日：2003-08-19
申请号：US09205589
申请日：1998-12-04
IPC分类号： G01R31302
CPC分类号： G01R31/311 , G01R31/303
摘要： A method and system providing single point high spatial and timing resolution for photoemission microscopy of an integrated circuit. A microscope having an objective lens forming a focal plane is arranged to view the integrated circuit, and an aperture element having an aperture is optically aligned in the back focal plane of the microscope. The aperture element is positioned for viewing a selected area of the integrated circuit. A photo-diode optically aligned with the aperture to detect photoemissions when test signals are applied to the integrated circuit.
摘要翻译： 一种为集成电路的光电显微镜提供单点高空间和时序分辨率的方法和系统。 具有形成焦平面的物镜的显微镜被布置成观看集成电路，并且具有孔的孔径元件在显微镜的后焦平面中被光学对准。 光圈元件被定位成用于观看集成电路的选定区域。 光电二极管与孔径光学对准以在测试信号被施加到集成电路时检测光电发射。
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公开(公告)号：US07062399B1
公开(公告)日：2006-06-13
申请号：US09586518
申请日：2000-06-02
申请人： Michael R. Bruce , Victoria J. Bruce , Rosalinda M. Ring , Edward Jr. I. Cole , Charles F. Hawkins , Paiboon Tangyungong
发明人： Michael R. Bruce , Victoria J. Bruce , Rosalinda M. Ring , Edward Jr. I. Cole , Charles F. Hawkins , Paiboon Tangyungong
IPC分类号： G01R31/14
CPC分类号： G01R31/2875 , G01R31/311
摘要： According to an example embodiment of the present invention a semiconductor die having a resistive electrical connection is analyzed. Heat is directed to the die as the die is undergoing a state-changing operation to cause a failure due to suspect circuitry. The die is monitored, and a circuit path that electrically changes in response to the heat is detected and used to detect that a particular portion therein of the circuit is resistive. In this manner, the detection and localization of a semiconductor die defect that includes a resistive portion of a circuit path is enhanced.
摘要翻译： 根据本发明的示例性实施例，分析具有电阻电连接的半导体管芯。 当芯片正在进行状态改变操作以引起可疑电路引起的故障时，热量被引导到芯片。 监测管芯，并且检测并响应于热而电变化的电路路径以检测其中电路中的特定部分是电阻性的。 以这种方式，增强了包括电路路径的电阻部分的半导体管芯缺陷的检测和定位。
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公开(公告)号：US06992773B1
公开(公告)日：2006-01-31
申请号：US09386112
申请日：1999-08-30
IPC分类号： G01B9/02
CPC分类号： G01N21/95684
摘要： According to one aspect of the disclosure and a particular example application directed to a flip-chip packaged die, a method for detecting a defect in a surface of the die includes directing light through a first beam splitter; directing light of a known wavelength at the beam splitter, wherein the first beam splitter is adapted to direct a first beam of light into the back side of the semiconductor die which reflects a second beam of light back; and redirecting the second beam to a second beam splitter, the second beam splitter generating third and fourth beams of light. Analysis of the third and fourth beams of light is then performed, and this analysis can include using detectors in respective paths of the third and fourth beams of light to generate an arrival time differential and then comparing the differential with a reference previously generated using a nondefective die.
摘要翻译： 根据本公开的一个方面和针对倒装芯片封装管芯的特定示例应用，用于检测管芯表面中的缺陷的方法包括将光引导通过第一分束器; 将所述已知波长的光导向所述分束器，其中所述第一分束器适于将第一光束引导到所述半导体管芯的反射第二光束的背面; 以及将所述第二光束重定向到第二分束器，所述第二分束器产生第三和第四光束。 然后执行第三和第四光束的分析，并且该分析可以包括在第三和第四光束的相应路径中使用检测器以产生到达时间差，然后将差分与先前使用无缺陷 死。
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公开(公告)号：US06873166B1
公开(公告)日：2005-03-29
申请号：US10234882
申请日：2002-09-04
IPC分类号： G01R31/28 , G01R31/311 , H01L21/66 , G01R31/06
CPC分类号： G01R31/2898 , G01R31/2851 , G01R31/2877 , G01R31/311 , H01L22/20
摘要： According to an example embodiment, a system for testing a semiconductor die is provided. The semiconductor die has circuitry on one side and silicon on an opposite side, and the opposite side may be AR coated. The opposite side is thinned, the die is powered, and a portion of the circuitry is heated to cause a reaction (e.g., a circuit failure or recovery) in a target region. The circuitry is monitored, and the circuit that reacts to the heat is detected and analyzed.
摘要翻译： 根据示例性实施例，提供了一种用于测试半导体管芯的系统。 半导体管芯在一侧具有电路，在相对侧具有硅，并且相对侧可以涂覆AR。 相对侧变薄，管芯被供电，并且电路的一部分被加热以引起目标区域中的反应（例如，电路故障或恢复）。 监测电路，并检测和分析与热量反应的电路。
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公开(公告)号：US06714294B1
公开(公告)日：2004-03-30
申请号：US10209844
申请日：2002-07-31
IPC分类号： G01N2100
CPC分类号： G01N21/9501
摘要： Methods and apparatus for inspecting a sample are provided. In one aspect, a method of inspection is provided that includes generating an entangled set of particle beams and directing one of the entangled set of particle beams to a location of a workpiece. One of the entangled set of particle beams interacts with the location of the workpiece. One of the entangled set of particle beams is observed after the interaction with the location of the workpiece to inspect the location of the workpiece.
摘要翻译： 提供了检查样品的方法和设备。 一方面，提供了一种检查方法，其包括产生纠缠的一组粒子束并将一组纠缠的粒子束引导到工件的位置。 一组纠缠的粒子束与工件的位置相互作用。 在与工件的位置相互作用之后观察到一组纠缠的粒子束，以检查工件的位置。
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