公开(公告)号：US06714294B1

公开(公告)日：2004-03-30

申请号：US10209844

申请日：2002-07-31

申请人： Michael R. Bruce ,  Victoria Jean Bruce ,  Rama R. Goruganthu

发明人： Michael R. Bruce ,  Victoria Jean Bruce ,  Rama R. Goruganthu

IPC分类号： G01N2100

CPC分类号： G01N21/9501

摘要： Methods and apparatus for inspecting a sample are provided. In one aspect, a method of inspection is provided that includes generating an entangled set of particle beams and directing one of the entangled set of particle beams to a location of a workpiece. One of the entangled set of particle beams interacts with the location of the workpiece. One of the entangled set of particle beams is observed after the interaction with the location of the workpiece to inspect the location of the workpiece.

摘要翻译： 提供了检查样品的方法和设备。 一方面，提供了一种检查方法，其包括产生纠缠的一组粒子束并将一组纠缠的粒子束引导到工件的位置。 一组纠缠的粒子束与工件的位置相互作用。 在与工件的位置相互作用之后观察到一组纠缠的粒子束，以检查工件的位置。

公开(公告)号：US06709985B1

公开(公告)日：2004-03-23

申请号：US09383781

申请日：1999-08-26

申请人： Rama R. Goruganthu ,  Michael R. Bruce

发明人： Rama R. Goruganthu ,  Michael R. Bruce

IPC分类号： H01L21302

CPC分类号： H01L21/3065 ,  H01L21/268 ,  H01L2224/16225 ,  H01L2224/73204 ,  H01L2924/15311

摘要： According to one aspect of the disclosure, laser-thermal annealing is used to clear an imaging path through the back side of a semiconductor device after the back side of the chip has been thinned to expose a selected region in the substrate. For many applications, thinning results in the formation of crystal defects that inhibit the ability to obtain images through the back side of the semiconductor device. One example embodiment overcomes this problem by thinning via laser-chemical etching the back side of the semiconductor device under a pressure exceeding a threshold level, and then reducing the pressure to a level below the threshold level and scanning the back side of the semiconductor device using a laser at a reduced power level. IR microscopy is then used to capture an image of a circuit in the circuit side of the semiconductor device through the back side of the semiconductor device. One particular example application is directed to a flip-chip semiconductor device. Another aspect of the invention is directed to clearing collision-induced viewing impairments, as may be caused by plasma etching.

摘要翻译： 根据本公开的一个方面，在芯片的背面已经变薄以暴露衬底中的选定区域之后，使用激光热退火来清除半导体器件背面的成像路径。 对于许多应用，稀化导致晶体缺陷的形成，其阻止通过半导体器件的背面获得图像的能力。 一个示例性实施例通过在超过阈值水平的压力下通过激光化学蚀刻半导体器件的背面稀化，然后将压力降低到阈值水平以下并且使用 激光功率降低。 然后使用IR显微镜通过半导体器件的背面来捕获半导体器件的电路侧的电路的图像。 一个特定示例应用涉及倒装芯片半导体器件。 本发明的另一方面涉及清除由等离子体蚀刻引起的碰撞诱发的视力损伤。

公开(公告)号：US06686757B1

公开(公告)日：2004-02-03

申请号：US09409217

申请日：1999-09-30

申请人： Rosalinda M. Ring ,  Rama R. Goruganthu ,  Brennan V. Davis ,  Jeffrey D. Birdsley ,  Michael R. Bruce

发明人： Rosalinda M. Ring ,  Rama R. Goruganthu ,  Brennan V. Davis ,  Jeffrey D. Birdsley ,  Michael R. Bruce

IPC分类号： G01R3128

CPC分类号： G01R31/311

摘要： According to an example embodiment of the present invention, a defect detection approach involves detecting the existence of defects in an integrated circuit as a function of at least one applied energy source. In response to energy that is applied to the integrated circuit, response signals are detected. A parameter including information such as amplitude, frequency, phase, or a spectrum is developed for a reference integrated circuit device and then compared to the detected response signal. The deviation in the response and reference signals, and the type of energy source used, are correlated to a particular defect in the device.

摘要翻译： 根据本发明的示例性实施例，缺陷检测方法包括检测作为至少一个应用能量源的函数的集成电路中的缺陷的存在。 响应于施加到集成电路的能量，检测响应信号。 为参考集成电路器件开发包括振幅，频率，相位或频谱等信息的参数，然后与检测到的响应信号进行比较。 响应和参考信号的偏差以及所使用的能量源的类型与设备中的特定缺陷相关。

公开(公告)号：US06483327B1

公开(公告)日：2002-11-19

申请号：US09409088

申请日：1999-09-30

申请人： Michael R. Bruce ,  Victoria J. Bruce ,  Jeffrey D. Birdsley ,  Rosalinda M. Ring ,  Rama R. Goruganthu ,  Brennan V. Davis

发明人： Michael R. Bruce ,  Victoria J. Bruce ,  Jeffrey D. Birdsley ,  Rosalinda M. Ring ,  Rama R. Goruganthu ,  Brennan V. Davis

IPC分类号： G01R31302

CPC分类号： G01R1/071 ,  G01R31/311

摘要： A method and system providing spatial and timing resolution for photoemission microscopy of an integrated circuit. A microscope having an objective lens forming a focal plane is arranged to view the integrated circuit, and an aperture element having an aperture is optically aligned in the back focal plane of the microscope. The aperture element is positioned for viewing a selected area of the integrated circuit. A position-sensitive avalanche photo-diode is optically aligned with the aperture to detect photoemissions when test signals are applied to the integrated circuit.

摘要翻译： 一种为集成电路的光电显微镜提供空间和时序分辨率的方法和系统。 具有形成焦平面的物镜的显微镜被布置成观看集成电路，并且具有孔的孔径元件在显微镜的后焦平面中被光学对准。 光圈元件被定位成用于观看集成电路的选定区域。 位置敏感的雪崩光电二极管与孔径光学对准以在测试信号被施加到集成电路时检测光电发射。

公开(公告)号：US06430728B1

公开(公告)日：2002-08-06

申请号：US09410147

申请日：1999-09-30

申请人： Rama R. Goruganthu ,  Jeffrey D. Birdsley ,  Michael R. Bruce ,  Brennan V. Davis ,  Rosalinda M. Ring

发明人： Rama R. Goruganthu ,  Jeffrey D. Birdsley ,  Michael R. Bruce ,  Brennan V. Davis ,  Rosalinda M. Ring

IPC分类号： G06F1750

CPC分类号： G01R31/307 ,  G10K15/046

摘要： According to an example embodiment, the present invention is directed to a system and method for analyzing an integrated circuit. A laser is directed to the back side of an integrated circuit and causes local heating, which generates acoustic energy in the circuit. The acoustic energy propagation in the integrated circuit is detected via at least two detectors. Using the detected acoustic energy from the detectors, at least one circuit defect is detected and located.

摘要翻译： 根据示例性实施例，本发明涉及用于分析集成电路的系统和方法。 激光被引导到集成电路的背面，并引起局部加热，其在电路中产生声能。 通过至少两个检测器检测集成电路中的声能传播。 使用来自检测器的检测到的声能，检测和定位至少一个电路缺陷。

公开(公告)号：US06414335B1

公开(公告)日：2002-07-02

申请号：US09864688

申请日：2001-05-23

申请人： Rama R. Goruganthu ,  Michael R. Bruce ,  Brennan V. Davis ,  Rosalinda M. Ring ,  Daniel L. Stone ,  Jeffrey D. Birdsley

发明人： Rama R. Goruganthu ,  Michael R. Bruce ,  Brennan V. Davis ,  Rosalinda M. Ring ,  Daniel L. Stone ,  Jeffrey D. Birdsley

IPC分类号： H01L2358

CPC分类号： G01R31/312 ,  G01R31/307

摘要： Analysis of a semiconductor die having silicon-on-insulator (SOI) structure is enhanced by capacitively coupling a signal to the die. According to an example embodiment of the present invention, a die having a thinned back side is analyzed by capacitively coupling an input signal through the insulator portion of the SOI structure and effecting a state change to circuitry in the die. The state change is used to evaluate a characteristic of the die, such as by detecting a response to the state change. The ability to force such a state change is helpful for evaluating dies having SOI structure, and is particularly useful for evaluation techniques that require or benefit from maintaining the insulator portion of the SOI structure intact.

摘要翻译： 通过将信号电容耦合到管芯来增强具有绝缘体上硅（SOI）结构的半导体管芯的分析。 根据本发明的示例性实施例，通过电容耦合通过SOI结构的绝缘体部分的输入信号并对模具中的电路进行状态分析来分析具有减薄背侧的管芯。 状态变化用于评估管芯的特性，例如通过检测对状态变化的响应。 强制这种状态变化的能力有助于评估具有SOI结构的管芯，并且对于需要或受益于保持SOI结构的绝缘体部分而完整的评估技术特别有用。

公开(公告)号：US06836132B1

公开(公告)日：2004-12-28

申请号：US10113604

申请日：2002-03-29

申请人： Michael R. Bruce ,  David H. Eppes ,  Rama R. Goruganthu

发明人： Michael R. Bruce ,  David H. Eppes ,  Rama R. Goruganthu

IPC分类号： G01R3128

CPC分类号： H01L22/20 ,  G01K7/015 ,  G01R31/303

摘要： A semiconductor device is analyzed and manufactured using a heat-exchange probe. According to an example embodiment of the present invention, a heat-exchange probe is controlled to exchange heat to a portion of a semiconductor device using sub-micron resolution. In one implementation, sub-micron resolution is achieved using a navigational arrangement, such as microscope, adapted to direct light to within about one micron of a target circuit portion on a plane of the device. In another implementation, a physical heat probe tip (e.g., a metal probe having about a one micron diameter probe tip) is navigated to a selected portion of the device using sub-micron navigational resolution. In each of these implementations, as well as others, the heat exchange is preponderantly confined to within about a one micron radius of a target portion of circuitry on lateral plane of the device. With this approach, heat exchange can be controlled to selectively stimulate circuitry within the device, which is particularly useful in high-density circuit implementations.

摘要翻译： 使用热交换探针分析和制造半导体器件。 根据本发明的示例性实施例，控制热交换探针以使用亚微米分辨率将热量交换到半导体器件的一部分。 在一个实施方案中，使用诸如显微镜的导航装置来实现亚微米分辨率，其适于将光引导到设备平面上的目标电路部分的约一微米内。 在另一个实施方案中，使用亚微米导航分辨率将物理热探针尖端（例如，具有约一微米直径的探针尖端的金属探针）导航到装置的选定部分。 在这些实施方案的每一个以及其它实施方案中，热交换主要被限制在装置的横向平面上的电路的目标部分的约一微米半径内。 利用这种方法，可以控制热交换以选择性地刺激装置内的电路，这在高密度电路实现中特别有用。

公开(公告)号：US06806166B1

公开(公告)日：2004-10-19

申请号：US09379047

申请日：1999-08-23

申请人： Jeffrey D. Birdsley ,  Michael R. Bruce ,  Rama R. Goruganthu ,  Brennan V. Davis ,  Rosalinda M. Ring

发明人： Jeffrey D. Birdsley ,  Michael R. Bruce ,  Rama R. Goruganthu ,  Brennan V. Davis ,  Rosalinda M. Ring

IPC分类号： H01L2130

CPC分类号： H01L22/26

摘要： According to an example embodiment of the present invention, a portion of substrate in the back side of a semiconductor chip is removed as a function of photons emitted through substrate remaining at the back side. The use of emitted photons is used to control the substrate removal process.

摘要翻译： 根据本发明的一个示例性实施例，半导体芯片的背面中的基板的一部分作为留在背面的基板发射的光子的函数被去除。 使用发射的光子来控制衬底去除过程。

公开(公告)号：US06780664B1

公开(公告)日：2004-08-24

申请号：US10324327

申请日：2002-12-20

申请人： Rama R. Goruganthu ,  Michael R. Bruce ,  Thomas Chu ,  Miguel Santana, Jr. ,  Robert Powell

发明人： Rama R. Goruganthu ,  Michael R. Bruce ,  Thomas Chu ,  Miguel Santana, Jr. ,  Robert Powell

IPC分类号： H01L2100

CPC分类号： G01Q70/12 ,  Y10S438/903 ,  Y10S977/876

摘要： Various microscopy probes and methods of fabricating the same are provided. In one aspect, a method of fabricating a microscopy probe is provided that includes providing a member and forming a first film on the member. The first film fosters growth of carbon nanotubes when exposed to a carbon-containing compound. A second film is formed on the first film. The second film has an opening therein that exposes a portion of the first film. A carbon nanotube is formed on the exposed portion of the first film.

摘要翻译： 提供了各种显微镜探针及其制造方法。 一方面，提供一种制造显微镜探针的方法，其包括提供构件并在构件上形成第一膜。 当暴露于含碳化合物时，第一种膜促进碳纳米管的生长。 在第一膜上形成第二膜。 第二膜在其中具有露出第一膜的一部分的开口。 在第一膜的暴露部分上形成碳纳米管。

公开(公告)号：US06529029B1

公开(公告)日：2003-03-04

申请号：US09409973

申请日：1999-09-30

申请人： Michael R. Bruce ,  Jeffrey D. Birdsley ,  Rosalinda M. Ring ,  Rama R. Goruganthu ,  Brennan V. Davis

发明人： Michael R. Bruce ,  Jeffrey D. Birdsley ,  Rosalinda M. Ring ,  Rama R. Goruganthu ,  Brennan V. Davis

IPC分类号： G01R3128

CPC分类号： G01R31/303

摘要： A method for detecting substrate damage in a flip chip die, having a back side and a circuit side, that uses magnetic resonance imaging. The back side of the die is first globally thinned down and a region for examination is selected. A magnetic field is applied to the selected region and then the region is scanned with a magnetic resonance imaging arrangement. A plurality of perturbations are measured to generate an array of perturbation signals, which are then converted to a local susceptibility map of the selected region of the die. The susceptibility map of the selected region is then examined to determine if there is any substrate damage.

摘要翻译： 一种用于检测使用磁共振成像的具有背面和电路侧的倒装芯片的基板损伤的方法。 首先将模具的背面全局变薄，并选择检查区域。 将磁场施加到所选择的区域，然后用磁共振成像装置扫描该区域。 测量多个扰动以产生扰动信号阵列，然后将它们转换成所选择的模具区域的局部磁敏度图。 然后检查所选区域的磁敏度图，以确定是否存在任何底物损伤。