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公开(公告)号：US06714294B1
公开(公告)日：2004-03-30
申请号：US10209844
申请日：2002-07-31
IPC分类号： G01N2100
CPC分类号： G01N21/9501
摘要： Methods and apparatus for inspecting a sample are provided. In one aspect, a method of inspection is provided that includes generating an entangled set of particle beams and directing one of the entangled set of particle beams to a location of a workpiece. One of the entangled set of particle beams interacts with the location of the workpiece. One of the entangled set of particle beams is observed after the interaction with the location of the workpiece to inspect the location of the workpiece.
摘要翻译： 提供了检查样品的方法和设备。 一方面，提供了一种检查方法，其包括产生纠缠的一组粒子束并将一组纠缠的粒子束引导到工件的位置。 一组纠缠的粒子束与工件的位置相互作用。 在与工件的位置相互作用之后观察到一组纠缠的粒子束，以检查工件的位置。
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公开(公告)号：US5661520A
公开(公告)日：1997-08-26
申请号：US350381
申请日：1994-12-05
申请人： Victoria Jean Bruce
发明人： Victoria Jean Bruce
IPC分类号： G01R31/302 , G01R31/308 , G01R31/311 , H01L21/66 , H04N7/18 , G06K9/00 , H04N9/47
CPC分类号： G01R31/311 , G01R31/308
摘要： Emission microscopy software for analyzing an integrated circuit includes one or more subroutines for determining the location of an emission site based upon a powered down background image and a powered up integrated circuit image; one or more subroutines for controlling an optical dispersing apparatus and a CCD camera shutter set on the emission site to obtain photon counts therein; one or more subroutines for correcting data obtained based upon equipment sensitivities; and one or more subroutines for manipulating data relating to light intensity, wavelength, and energy, as well as relating to voltages applied to the integrated circuit.
摘要翻译： 用于分析集成电路的发射显微镜软件包括用于基于掉电背景图像和加电集成电路图像来确定发射位置的位置的一个或多个子程序; 用于控制光学分散装置的一个或多个子程序和设置在发射场地上的CCD照相机快门以获得光子计数; 用于校正基于设备灵敏度获得的数据的一个或多个子程序; 以及用于操纵与光强度，波长和能量有关的数据的一个或多个子程序，以及与施加到集成电路的电压有关的子程序。
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3.发明授权公开(公告)号：US06300148B1
公开(公告)日：2001-10-09
申请号：US09166266
申请日：1998-10-05
IPC分类号： G01R3126
CPC分类号： H01L22/32 , G01R31/2884 , H01L21/76898 , H01L23/481 , H01L2224/05571 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2924/01077 , H01L2924/15311 , H01L2224/05599
摘要： A semiconductor structure with a backside protective layer and backside probes and a method for constructing the structure. Consistent with one embodiment of the invention, the semiconductor structure comprises a substrate having a first surface, on which a circuit interconnect layer is formed, and a second surface. A protective layer is formed on the second surface of the substrate, wherein the protective layer is non-reactive with gas used to etch the substrate. An electrically conductive probe extends from the protective layer through the substrate to an active region which is disposed in the substrate.
摘要翻译： 具有背面保护层和背面探针的半导体结构以及构造该结构的方法。 根据本发明的一个实施例，半导体结构包括具有第一表面的基板，在其上形成电路互连层和第二表面。 在衬底的第二表面上形成保护层，其中保护层与用于蚀刻衬底的气体不反应。 导电探针从保护层延伸穿过衬底到设置在衬底中的有源区。
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4.发明授权Method for etching a flip chip using secondary particle emissions to detect the etch end-point 失效使用二次粒子发射来蚀刻倒装芯片以检测蚀刻终点的方法公开(公告)号：US06210981B1
公开(公告)日：2001-04-03
申请号：US09249367
申请日：1999-02-12
IPC分类号： H01L2100
CPC分类号： H01L21/3065 , H01J2237/30466 , H01J2237/3174 , H01L21/31116
摘要： A method for etching a flip chip using secondary particle emissions to detect the etch end-point. The method comprises supplying a voltage level to the device and directing an ion beam at a selected area of the back side of the device in the presence of a gas that is reactive with the substrate. While etching, the quantity of secondary particles emitted from the selected area of the device is monitored. When the quantity of emitted secondary particles reaches a predetermined level, the ion beam is stopped and the reactive gas is removed.
摘要翻译： 一种使用二次粒子发射来蚀刻倒装芯片以检测蚀刻终点的方法。 该方法包括在存在与衬底反应的气体的情况下，向器件提供电压电平并将离子束引导到器件背面的选定区域。 在蚀刻时，监测从设备的选定区域发射的二次粒子的量。 当发射的二次粒子的量达到预定水平时，停止离子束并去除反应气体。
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