利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

174 条记录 (耗时 0.038 秒)

    Synthetic pattern exchange configuration for side reading reduction
    41.
    发明授权
    Synthetic pattern exchange configuration for side reading reduction 失效
    合成图案交换配置，用于减少边读数

    公开(公告)号：US07010848B2

    公开(公告)日：2006-03-14

    申请号：US10077064

    申请日：2002-02-15

    申请人： Min Li ,  You Feng Zheng ,  Simon Liao ,  Kochan Ju

    发明人： Min Li ,  You Feng Zheng ,  Simon Liao ,  Kochan Ju

    IPC分类号： G11B5/39 ,  G11B5/33 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B32B15/01 ,  B32B15/018 ,  B82Y10/00 ,  B82Y40/00 ,  C21D1/04 ,  C22C30/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/308 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： A patterned, synthetic, longitudinally exchange biased GMR sensor is provided which has a narrow effective trackwidth and reduced side reading. The advantageous properties of the sensor are obtained by satisfying a novel relationship between the magnetizations (M) of the ferromagnetic free layer (F1) and the ferromagnetic biasing layer (F2) which enables the optimal thicknesses of those layers to be determined for a wide range of ferromagnetic materials and exchange coupling materials. The relationship to be satisfied is MF2/MF1=(Js+Jex)/Js, where Js is the synthetic coupling energy between F1 and F2 and Jex is the exchange energy between F2 and an overlaying antiferromagnetic pinning layer. An alternative embodiment omits the overlaying antiferromagnetic pinning layer which causes the relationship to become MF2/MF1=1.

    摘要翻译： 提供了一种图案化，合成的纵向交换偏置GMR传感器，其具有窄的有效轨道宽度和减小的侧读数。 通过满足强磁性自由层（F 1）的磁化（M）和铁磁偏置层（F 2）之间的新颖关系，能够确定这些层的最佳厚度，从而获得传感器的有利特性。 宽范围的铁磁材料和交换耦合材料。 要满足的关系是M＆lt; F2＆gt; /＆lt; F1＆gt; =＆lt; J＆gt; 其中J 1是F 1和F 2之间的合成耦合能量，而J 2是在F 2和覆盖反铁磁之间的交换能量 钉扎层。 替代实施例省略了使得该关系变为M F2 / M F1 / 1的叠加反铁磁钉扎层。

    Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR heads
    46.
    发明授权
    Multilayered structures comprising magnetic nano-oxide layers for current perpindicular to plane GMR heads 失效
    包括磁性纳米氧化物层的多层结构，用于与平面GMR头垂直

    公开(公告)号：US06888703B2

    公开(公告)日：2005-05-03

    申请号：US09953539

    申请日：2001-09-17

    申请人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

    发明人： Bernard Dieny ,  Cheng Horng ,  Kochan Ju ,  Min Li ,  Simon Liao

    IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01F41/14 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    CPC分类号： H01F41/302 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272

    摘要： Nano-oxide based current-perpendicular-to-plane (CPP) magnetoresistive (MR) sensor stacks are provided, together with methods for forming such stacks. Such stacks have increased resistance and enhanced magnetoresistive properties relative to CPP stacks made entirely of metallic layers. Said enhanced properties are provided by the insertion of magnetic nano-oxide layers between ferromagnetic layers and non-magnetic spacer layers, whereby said nano-oxide layers increase resistance and exhibit spin filtering properties. CPP sensor stacks of various types are provided, all having nano-oxide layers formed therein, including the spin-valve type and the synthetic antiferromagnetic pinned layer spin-valve type. Said stacks can also be formed upon each other to provide laminated stacks of different types.

    摘要翻译： 提供基于纳米氧化物的电流 - 垂直平面（CPP）磁阻（MR）传感器堆叠，以及用于形成这种堆叠的方法。 相对于完全由金属层制成的CPP叠层，这种堆叠具有增加的电阻和增强的磁阻特性。 通过在铁磁层和非磁性间隔层之间插入磁性纳米氧化物层来提供所述增强的性质，由此所述纳米氧化物层增加电阻并显示自旋过滤性质。 提供了各种类型的CPP传感器堆叠，其中都具有形成在其中的纳米氧化物层，包括自旋阀型和合成反铁磁性钉扎层型旋转阀型。 所述堆叠也可以彼此形成以提供不同类型的叠层。

    CPP GMR device with inverse GMR material
    49.
    发明授权
    CPP GMR device with inverse GMR material 失效
    具有反向GMR材料的CPP GMR器件

    公开(公告)号：US06683762B2

    公开(公告)日：2004-01-27

    申请号：US10167857

    申请日：2002-06-11

    申请人： Min Li ,  Simon Liao ,  Kochan Ju

    发明人： Min Li ,  Simon Liao ,  Kochan Ju

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F41/302

    摘要： Pinned layers that are synthetically, rather than directly, pinned are desirable for a Current Perpendicular to Plane Spin Valve structure because they are more stable. However, this comes at the cost or reduced performance. The present invention solves this problem by modifying the composition of AP2. AP2 is the antiparallel layer that contacts the antiferromagnetic layer (AP1 being in contact with the pinned layer). Said modification comprises the addition of chromium or vanadium to AP2. Examples of alloys suitable for use in AP2 include NiFeCr, NiCr, CoCr, CoFeCr, and CoFeV. Additionally, the ruthenium layer normally used to effect antiferromagnetic coupling between AP1 and AP2, is replaced by a layer of chromium. The resulting structure exhibits the stability of the synthetic pin unit and the performance of the direct pin unit.

    摘要翻译： 对于垂直于平面旋转阀结构的电流而言，合成而不是直接固定的固定层是理想的，因为它们更稳定。 然而，这是成本或降低的性能。 本发明通过改变AP2的组成来解决这个问题。 AP2是与反铁磁层（AP1与被钉扎层接触）接触的反向平行层。 所述改性包括向AP2中加入铬或钒。 适用于AP2的合金的实例包括NiFeCr，NiCr，CoCr，CoFeCr和CoFeV。 此外，通常用于实现AP1和AP2之间的反铁磁耦合的钌层被一层铬替代。 所得到的结构表现出合成销单元的稳定性和直销销单元的性能。