公开(公告)号：US20100053575A1

公开(公告)日：2010-03-04

申请号：US12204527

申请日：2008-09-04

申请人： I-Hsiung Huang ,  Tsiao-Chen Wu ,  Hsin-Chang Lee ,  Anthony Yen

发明人： I-Hsiung Huang ,  Tsiao-Chen Wu ,  Hsin-Chang Lee ,  Anthony Yen

IPC分类号： G03B27/52

CPC分类号： G03B27/52 ,  G03F7/70875

摘要： A method of patterning an integrated circuit including generating a thermal profile of a reticle is provided. The thermal profile of the reticle may illustrate heat accumulation (e.g., a temperature) in a EUV reticle due an incident EUV radiation beam. The thermal profile may be determined using the pattern density of the reticle. The reticle is irradiated with a radiation beam having an extreme ultraviolet (EUV) wavelength. A thermal control profile may be generated using the thermal profile, which may define a parameter of the lithography process such as, a temperature gradient of a thermal control chuck. The thermal control profile may be downloaded to the EUV lithography tool (e.g., scanner or stepper) for use in a process. A separate thermal control profile may be provided for different reticles.

摘要翻译： 提供一种图案化集成电路的方法，包括生成掩模版的热分布图。 掩模版的热分布可以说明由于入射的EUV辐射束而导致的EUV掩模版中的热积聚（例如，温度）。 可以使用掩模版的图案密度来确定热分布。 用具有极紫外（EUV）波长的辐射束照射掩模版。 可以使用热分布来产生热控制曲线，其可以限定光刻工艺的参数，例如热控制卡盘的温度梯度。 可以将热控制简档下载到EUV光刻工具（例如扫描器或步进器）以用于一个过程。 可以为不同的掩模版提供单独的热控制轮廓。

公开(公告)号：US20090206057A1

公开(公告)日：2009-08-20

申请号：US12031501

申请日：2008-02-14

申请人： I-Hsiung Huang ,  Chi-Lun Lu ,  Heng-Jen Lee ,  Sheng-Chi Chin ,  Yao-Ching Ku

发明人： I-Hsiung Huang ,  Chi-Lun Lu ,  Heng-Jen Lee ,  Sheng-Chi Chin ,  Yao-Ching Ku

IPC分类号： C23F1/08

CPC分类号： G03F1/32 ,  G03F1/36 ,  G03F1/80 ,  H01J37/32422 ,  H01L21/67167 ,  H01L21/67207 ,  H01L21/67236

摘要： A method and system for fabricating a substrate is disclosed. First, a plurality of process chambers are provided, at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate and at least one of the plurality of process chambers containing a plasma filtering plate library. A plasma filtering plate is selected and removed from the plasma filtering plate library. Then, the plasma filtering plate is inserted into at least one of the plurality of process chambers adapted to receive at least one plasma filtering plate. Subsequently, an etching process is performed in the substrate.

摘要翻译： 公开了一种用于制造衬底的方法和系统。 首先，提供多个处理室，多个处理室中的至少一个适于接收至少一个等离子体过滤板和多个处理室中的至少一个包含等离子体过滤板库。 从等离子体过滤板文库中选择并除去等离子体过滤板。 然后，将等离子体过滤板插入适于接收至少一个等离子体过滤板的多个处理室中的至少一个。 随后，在衬底中进行蚀刻处理。

公开(公告)号：US20130252175A1

公开(公告)日：2013-09-26

申请号：US13429921

申请日：2012-03-26

申请人： I-Hsiung Huang ,  Heng-Hsin Liu ,  Heng-Jen Lee ,  Chin-Hsiang Lin

发明人： I-Hsiung Huang ,  Heng-Hsin Liu ,  Heng-Jen Lee ,  Chin-Hsiang Lin

IPC分类号： G03F7/20 ,  H01L21/00

CPC分类号： G03F7/30 ,  G03F7/16 ,  G03F7/70991 ,  H01L21/67225 ,  H01L21/67745

摘要： The present disclosure relates to a lithographic tool arrangement for semiconductor workpiece processing. The lithographic tool arrangement groups lithographic tools into clusters, and selectively transfers a semiconductor workpiece between a plurality of lithographic tools of a first type in a first cluster to a plurality of lithographic tools of a second type in a second cluster. The selective transfer is achieved though a transfer assembly, which is coupled to a defect scan tool that identifies defects generated in the lithographic tool of the first type. The disclosed lithographic tool arrangement also utilizes shared structural elements such as a housing assembly, and shared functional elements such as gases and chemicals. The lithographic tool arrangement may consist of baking, coating, exposure, and development units configured to provide a modularization of these various components in order to optimize throughput and efficiency for a given lithographic fabrication process.

摘要翻译： 本公开涉及一种用于半导体工件加工的平版印刷工具装置。 光刻工具装置将光刻工具组合成簇，并且将半导体工件在第一簇中的第一类型的多个光刻工具之间选择性地传输到第二簇中的第二类型的光刻工具。 通过转移组件实现选择性转移，转移组件耦合到识别第一类型的光刻工具中产生的缺陷的缺陷扫描工具。 所公开的平版印刷工具装置还利用共同的结构元件，例如壳体组件和诸如气体和化学品的共享功能元件。 光刻工具装置可以包括被配置成提供这些各种部件的模块化的烘烤，涂覆，曝光和显影单元，以便为给定的光刻制造工艺优化产量和效率。

公开(公告)号：US08338960B2

公开(公告)日：2012-12-25

申请号：US13437575

申请日：2012-04-02

申请人： Ling-Chieh Lin ,  Chien-Fu Lee ,  I-Hsiung Huang

发明人： Ling-Chieh Lin ,  Chien-Fu Lee ,  I-Hsiung Huang

IPC分类号： H01L23/522

CPC分类号： G03F1/36

摘要： A method of manufacturing a photomask is described. The graphic data of the photomask are provided, and than an optical proximity correction is performed to the graphic data. A process rule check is then performed to the graphic data with the optical proximity correction. When at least one failed pattern not passing the process rule check is found in the graphic data, a repair procedure is performed only to the failed pattern so that the failed pattern can pass the process rule check. The patterns of the photomask are then formed according to the corrected and repaired graphic data.

公开(公告)号：US08338262B2

公开(公告)日：2012-12-25

申请号：US12478426

申请日：2009-06-04

申请人： Heng-Jen Lee ,  Jui-Chun Peng ,  I-Hsiung Huang

发明人： Heng-Jen Lee ,  Jui-Chun Peng ,  I-Hsiung Huang

IPC分类号： H01L21/336

CPC分类号： G03F7/203 ,  G03F7/7045 ,  G03F7/70458 ,  G03F7/70466

摘要： A dual wavelength exposure system provides for patterning a resist layer formed on a wafer for forming semiconductor devices, using two exposure operations, one including a first radiation having a first wavelength and the other including a second radiation including a second wavelength. Different or the same lithography tool may be used to generate the first and second radiation. For each die formed on the semiconductor device, a critical portion of the pattern is exposed using a first exposure operation that uses a first radiation with a first wavelength and a non-critical portion of the pattern is exposed using a second exposure operation utilizing the second radiation at a second wavelength. The resist material is chosen to be sensitive to both the first radiation having a first wavelength and the second radiation having the second wavelength.

摘要翻译： 双波长曝光系统提供了使用两个曝光操作来形成在晶片上形成的晶片上的抗蚀剂层，一个包括具有第一波长的第一辐射，另一个包括包括第二波长的第二辐射。 可以使用不同或相同的光刻工具来产生第一和第二辐射。 对于形成在半导体器件上的每个裸片，使用第一曝光操作曝光图案的关键部分，该第一曝光操作使用第一波长的第一辐射，并且使用第二曝光操作曝光图案的非关键部分 第二波长的辐射。 抗蚀剂材料被选择为对具有第一波长的第一辐射和具有第二波长的第二辐射都敏感。

公开(公告)号：US06458705B1

公开(公告)日：2002-10-01

申请号：US09874522

申请日：2001-06-06

申请人： Kuei-Chun Hung ,  Vencent Chang ,  I-Hsiung Huang ,  Ya-Hui Chang

发明人： Kuei-Chun Hung ,  Vencent Chang ,  I-Hsiung Huang ,  Ya-Hui Chang

IPC分类号： H01L2100

CPC分类号： H01L21/76808

摘要： In accordance with the present invention, a method for forming a via-first dual damascene interconnect structure by using gap-filling material whose thickness is easily controlled by a developer is provided. The essential part of the present invention is the application of gap-filling materials such as novolak, PHS, acrylate, methacrylate, and COMA to fill vias. Filling vias with these materials can get a greater planar topography for trench patterning due to its excellent gap-filling capacity, protect the bottom of vias from damage during the trench etch, and prevent the fence problem by using a developer to control its thickness in vias.

摘要翻译： 根据本发明，提供了一种通过使用其厚度容易由显影剂控制的间隙填充材料形成通孔 - 第一双镶嵌互连结构的方法。 本发明的主要部分是填充空隙填充材料如酚醛清漆，PHS，丙烯酸酯，甲基丙烯酸酯和COMA以填充通孔。 这些材料的填充通孔可以获得更大的平面形状，用于沟槽图案化，由于其优异的间隙填充能力，保护通孔的底部不受沟槽蚀刻期间的损坏，并通过使用显影剂来控制其通孔中的厚度来防止栅栏问题 。