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公开(公告)号：US07189499B2
公开(公告)日：2007-03-13
申请号：US10602883
申请日：2003-06-25
CPC分类号： G03F7/40 , G03F7/0035
摘要： It is disclosed a method of forming fine patterns comprising: covering a substrate having photoresist patterns with an over-coating agent for forming fine patterns, removing the unwanted over-coating agent that has been deposited on the edge portions and/or the back side of the substrate, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely. The invention provides a method of forming fine patterns which has high ability to control pattern dimensions and provide fine patterns that have a satisfactory profile and satisfy the characteristics required of semiconductor devices, with an additional capability of preventing the occurrence of particles which are a potential cause of device contamination.
摘要翻译： 公开了一种形成精细图案的方法，包括：用具有用于形成精细图案的外涂层覆盖具有光致抗蚀剂图案的基板，去除沉积在边缘部分和/或背面上的不想要的过涂层剂 基板，进行热处理以引起外涂层的热收缩，使得相邻的光致抗蚀剂图案之间的间隔由于所得的热收缩作用而降低，并且基本上完全除去覆盖剂。 本发明提供了一种形成精细图案的方法，其具有很高的控制图案尺寸的能力，并提供具有令人满意的轮廓并且满足半导体器件所需特性的精细图案，具有防止作为潜在原因的颗粒的发生的附加能力 的设备污染。
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公开(公告)号：US20060263728A1
公开(公告)日：2006-11-23
申请号：US11493538
申请日：2006-07-27
IPC分类号： G03C5/00
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0277
摘要： It is disclosed a method of forming fine patterns comprising repeating plural times the following course of steps: covering a substrate having thereon photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between the adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent. The invention provides a method of forming fine patterns which has high ability to control pattern dimensions and provide fine patterns that have a satisfactory profile and satisfy the characteristics required of semiconductor devices, even in the case of employing a substrate having thick-film photoresist patterns in a thickness of about 1.0 μm or more.
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公开(公告)号：US20050009365A1
公开(公告)日：2005-01-13
申请号：US10691537
申请日：2003-10-24
IPC分类号： G03F7/40 , H01L21/027 , H01L21/31 , H01L21/00 , H01L21/469 , H01L21/4763
CPC分类号： G03F7/40 , H01L21/0273
摘要： It is disclosed a method of forming fine patterns comprising: subjecting a substrate having photoresist patterns to a hydrophilic treatment, covering the substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely.
摘要翻译： 公开了一种形成精细图案的方法，包括：对具有光致抗蚀剂图案的基板进行亲水处理，用用于形成精细图案的过涂层覆盖具有光致抗蚀剂图案的基板，进行热处理以引起过热， 使得相邻的光致抗蚀剂图案之间的间隔由于所得的热收缩作用而减轻，并且基本上完全除去覆盖剂。
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公开(公告)号：US06455228B1
公开(公告)日：2002-09-24
申请号：US09641686
申请日：2000-08-18
申请人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
发明人： Toshikazu Tachikawa , Fumitake Kaneko , Naotaka Kubota , Miwa Miyairi , Takako Hirosaki , Koutaro Endo
IPC分类号： G03F7004
CPC分类号： G03F7/091 , G03F7/0382
摘要： Disclosed is a novel multilayered body for photolithographic patterning of a photoresist layer from which a patterned resist layer having an excellent cross sectional profile can be obtained when the multilayered structure comprises, on the surface of a substrate, an underlying water-insoluble anti-reflection film and a negative-working photoresist layer of a specific photoresist composition comprising: (A) 100 parts by weight of an alkali-soluble resin; (B) from 0.5 to 20 parts by weight of an onium salt compound capable of releasing an acid by irradiation with actinic rays; and (C) from 3 to 50 parts by weight of a glycoluril compound substituted by at least one hydroxyalkyl group or alkoxyalkyl group at the N-position.
摘要翻译： 公开了一种用于光致抗蚀剂层的光刻图案的新型多层体，当多层结构在基材的表面上包含下面的不溶于水的抗反射膜时，可以从其获得具有优异横截面轮廓的图案化抗蚀剂层 和特定光致抗蚀剂组合物的负性光致抗蚀剂层，其包含：（A）100重量份的碱溶性树脂;（B）0.5至20重量份能够通过照射释放酸的鎓盐化合物 与光化射线 和（C）3至50重量份在N-位被至少一个羟烷基或烷氧基烷基取代的甘脲化合物。
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公开(公告)号：US6042988A
公开(公告)日：2000-03-28
申请号：US161778
申请日：1998-09-29
申请人： Mitsuro Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Yoshiki Sugeta
发明人： Mitsuro Sato , Katsumi Oomori , Etsuko Iguchi , Kiyoshi Ishikawa , Fumitake Kaneko , Yoshiki Sugeta
CPC分类号： G03F7/038 , G03F7/0045 , Y10S430/12 , Y10S430/122
摘要： The present invention provides a chemical-amplification-type negative resist composition containing an alkali-soluble resin, a compound capable of generating an acid by irradiation and a crosslinking agent, and the resist composition of the present invention is characterized in that it further contains an organic carboxylic acid compound as an acidic compound and an organic amine compound as an alkaline compound. According to the content of such acidic and alkaline compounds, the negative resist composition achieves a negative resist pattern exhibiting improved definition and an excellent profile with a reduced dependency on the type of substrate as well as a minimized change in the sensitivety and film thickness with the passage of time and a satisfactory PEG margin, and therefore, the negative resist composition of the present invention can be used in the field of manufacturing electronic parts such as semiconductor devices and liquid-crystal display devices, where finer and more precise processing is increasingly required.
摘要翻译： 本发明提供一种含有碱溶性树脂，能够通过照射产生酸的化合物和交联剂的化学扩增型负性抗蚀剂组合物，其特征在于，其还含有 作为酸性化合物的有机羧酸化合物和作为碱性化合物的有机胺化合物。 根据这种酸性和碱性化合物的含量，负性抗蚀剂组合物实现了抗蚀剂图案显示出改善的清晰度和优异的轮廓，对基材的类型的依赖性降低，并且使敏感度和膜厚度的最小化变化与 时间的流逝和令人满意的PEG余量，因此，本发明的负性抗蚀剂组合物可以用于半导体器件和液晶显示器件等电子部件的制造领域，其中越来越需要更精细和更精确的加工 。
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46.发明申请Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent 审中-公开用于形成精细图案的过涂层剂和使用这种试剂形成精细图案的方法公开(公告)号：US20100139838A1
公开(公告)日：2010-06-10
申请号：US12457765
申请日：2009-06-19
CPC分类号： G03F7/40 , G03F7/0046
摘要： It is disclosed an over-coating agent for forming fine patterns which is applied to cover a substrate having thereon photoresist patterns and allowed to shrink under heat so that the spacing between adjacent photoresist patterns is lessened, with the applied film of the over-coating agent being removed substantially completely to form or define fine trace patterns, further characterized by containing a water-soluble polymer and a water-soluble fluorine compound (e.g. a fluoroalkyl alcohol or a fluoroalkyl carboxylic acid). Also disclosed is a method of forming fine-line patterns using the over-coating agent. According to the invention, one can reduce microfoaming and defects to produce fine-line patterns that have good leveling and coating properties and which also present satisfactory profiles and meet the characteristics required of today's semiconductor devices.
摘要翻译： 公开了一种用于形成精细图案的覆盖剂，其用于覆盖其上具有光致抗蚀剂图案的基底并且允许在加热下收缩，使得相邻的光致抗蚀剂图案之间的间隔被减小，涂覆剂的涂布膜 基本上完全除去以形成或限定精细痕迹图案，其特征还在于含有水溶性聚合物和水溶性氟化合物（例如氟烷基醇或氟代烷基羧酸）。 还公开了使用过涂层剂形成细线图案的方法。 根据本发明，可以减少微发泡和缺陷，以产生具有良好流平性和涂层性能的细线图案，并且还具有令人满意的轮廓并满足当今半导体器件所需的特性。
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公开(公告)号：US07553610B2
公开(公告)日：2009-06-30
申请号：US12232517
申请日：2008-09-18
IPC分类号： G03C5/00
CPC分类号： G03F7/40 , H01L21/0274
摘要： It is disclosed a method of forming fine patterns comprising: covering a substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely by way of bringing thusly treated substrate into contact with a remover solution for over 60 seconds.
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48.发明申请NOVEL COMPOUND AND METHOD OF PRODUCING THE SAME, ACID GENERATOR, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权新型化合物及其制造方法，酸发生器，耐蚀组合物和形成耐蚀图案的方法公开(公告)号：US20090162788A1
公开(公告)日：2009-06-25
申请号：US12338661
申请日：2008-12-18
申请人： Hideo Hada , Yoshiyuki Utsumi , Keita Ishiduka , Kensuke Matsuzawa , Fumitake Kaneko , Kyoko Ohshita , Hiroaki Shimizu , Yasuhiro Yoshii
发明人： Hideo Hada , Yoshiyuki Utsumi , Keita Ishiduka , Kensuke Matsuzawa , Fumitake Kaneko , Kyoko Ohshita , Hiroaki Shimizu , Yasuhiro Yoshii
IPC分类号： G03F7/004 , G03F7/20 , C07C69/753 , C07C305/04
CPC分类号： C07C381/12 , C07C303/32 , C07C309/06 , C07C309/12 , C07C309/17 , C07C309/19 , C07C2603/74 , C07D333/46 , C07D493/18 , C08K5/19 , C08K5/42 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , Y10S430/111 , Y10S430/12 , Y10S430/122 , Y10S430/123
摘要： A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) consisting of a compound represented by general formula (b1-1) shown below: wherein RX represents a hydrocarbon group which may have a substituent exclusive of a nitrogen atom; each of Q2 and Q3 independently represents a single bond or a divalent linkage group; Y1 represents an alkylene group or fluorinated alkyl group of 1 to 4 carbon atoms; and Z+ represents an organic cation exclusive of an ion represented by general formula (w-1).
摘要翻译： 一种抗蚀剂组合物，其包含在酸的作用下在碱性显影液中溶解度变化的碱成分（A）和曝光时产生酸的酸发生剂成分（B），所述酸发生剂成分（B）含有酸发生剂 （B1）由下述通式（b1-1）表示的化合物组成：其中RX表示可以具有不包括氮原子的取代基的烃基; Q2和Q3各自独立地表示单键或二价连接基团; Y1表示1〜4个碳原子的亚烷基或氟代烷基; Z +表示除通式（w-1）表示的离子的有机阳离子。
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公开(公告)号：US20090029297A1
公开(公告)日：2009-01-29
申请号：US12232517
申请日：2008-09-18
IPC分类号： G03F7/00
CPC分类号： G03F7/40 , H01L21/0274
摘要： It is disclosed a method of forming fine patterns comprising: covering a substrate having photoresist patterns with an over-coating agent for forming fine patterns, applying heat treatment to cause thermal shrinkage of the over-coating agent so that the spacing between adjacent photoresist patterns is lessened by the resulting thermal shrinking action, and removing the over-coating agent substantially completely by way of bringing thusly treated substrate into contact with a remover solution for over 60 seconds.
摘要翻译： 公开了一种形成精细图案的方法，包括：用用于形成精细图案的过涂层覆盖具有光致抗蚀剂图案的基板，进行热处理以引起外涂层的热收缩，使得相邻光致抗蚀剂图案之间的间隔为 通过所得到的热收缩作用减轻，并且通过将经处理的基底与去除剂溶液接触超过60秒，基本上完全除去覆盖剂。
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公开(公告)号：US20060099347A1
公开(公告)日：2006-05-11
申请号：US11305160
申请日：2005-12-19
CPC分类号： G03F7/40
摘要： The invention discloses improvements in the so-called coated thermal flow process for reducing the pattern dimension of a patterned resist layer on a substrate to accomplish increased fineness of resist patterning, in which a coating layer of a water-soluble resin formed on the patterned resist layer is heat-treated to effect thermal shrinkage of the coating layer with simultaneous reduction of the pattern dimension followed by removal of the coating layer by washing with water. The improvement of the process is obtained by using an aqueous coating solution admixed with a water-soluble amine compound such as triethanolamine in addition to a water-soluble resin such as a polyacrylic acid-based polymer. Further improvements can be obtained by selecting the water-soluble resin from specific copolymers including copolymers of (meth)acrylic acid and a nitrogen-containing monomer such as N-vinylpyrrolidone, N-vinylimidazolidinone and N-acryl-oylmorpholine as well as copolymers of N-vinylpyrrolidone and N-vinylimidazolidinone in a specified copolymerization ratio.
摘要翻译： 本发明公开了所谓的涂覆热流程的改进，以减少衬底上的图案化抗蚀剂层的图案尺寸，以实现抗蚀剂图案化的增强的细度，其中形成在图案化抗蚀剂上的水溶性树脂的涂层 层进行热处理以实现涂层的热收缩，同时减少图案尺寸，随后通过用水洗涤除去涂层。 除了水溶性树脂如聚丙烯酸类聚合物之外，还使用与水溶性胺化合物如三乙醇胺混合的水性涂布溶液来获得该方法的改进。 通过从包括（甲基）丙烯酸和含氮单体如N-乙烯基吡咯烷酮，N-乙烯基咪唑啉酮和N-丙烯酰基 - 吗啉的共聚物的特定共聚物中选择水溶性树脂以及N 乙烯基吡咯烷酮和N-乙烯基咪唑烷酮。
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