公开(公告)号：US07190002B2

公开(公告)日：2007-03-13

申请号：US11016956

申请日：2004-12-21

申请人： Tae-yeon Seong ,  June-o Song

发明人： Tae-yeon Seong ,  June-o Song

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L33/32

摘要： A flip-chip light emitting device and a method of manufacturing thereof are provided. The flip-chip nitride light emitting device includes a substrate, an n type clad layer, an active layer, a p type clad layer, a multi ohmic contact layer, and a reflective layer, which are stacked in this order, wherein the multi ohmic contact layer is obtained by repeatedly stacking at least one stack unit of a reforming metal layer and a transparent conductive thin film, and wherein the reforming metal layer mainly contains silver (Ag). According to the flip-chip light emitting device and the method of manufacturing thereof, since the ohmic contact characteristics associated with a p type clad layer can be improved, it is possible to increase wire bonding efficiency and yield in a packaging process. In addition, since a low non-contact resistance and a good current-voltage characteristic can be obtained, it is possible to improve light emitting efficiency and to expand life time of the flip-chip light emitting device.

摘要翻译： 提供了一种倒装芯片发光器件及其制造方法。 倒装氮化物发光器件包括依次堆叠的衬底，n型覆盖层，有源层，ap型覆盖层，多欧姆接触层和反射层，其中多欧姆接触 通过重复堆叠重整金属层和透明导电薄膜的至少一个堆叠单元获得层，其中重整金属层主要含有银（Ag）。 根据倒装芯片发光器件及其制造方法，由于能够提高与p型覆盖层相关的欧姆接触特性，所以能够提高封装工序中的引线接合效率和收率。 此外，由于可以获得低的非接触电阻和良好的电流 - 电压特性，所以可以提高发光效率并延长倒装芯片发光器件的使用寿命。

公开(公告)号：US06989598B2

公开(公告)日：2006-01-24

申请号：US10801823

申请日：2004-03-17

申请人： June-o Song ,  Dong-suk Leem ,  Tae-yeon Seong

发明人： June-o Song ,  Dong-suk Leem ,  Tae-yeon Seong

IPC分类号： H01L29/40

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/3054 ,  H01S5/32341

摘要： Disclosed herein is a technique for forming a high quality ohmic contact utilizable in the fabrication of short-wavelength light emitting diodes (LEDs) emitting blue and green visible light and ultraviolet light, and laser diodes (LDs) using a gallium nitride (GaN) semiconductor.The ohmic contact is formed by depositing a nickel (Ni)-based solid solution on top of a p-type gallium nitride semiconductor. The ohmic contact thus formed has an excellent current-voltage characteristic and a low specific contact resistance due to an increased effective carrier concentration around the surface of the gallium nitride layer, as well as a high transmittance in the short-wavelength region.

公开(公告)号：US07666693B2

公开(公告)日：2010-02-23

申请号：US12180312

申请日：2008-07-25

申请人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

发明人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

IPC分类号： H01L21/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.

摘要翻译： 提供了一种顶发射N型发光器件及其制造方法。 该器件包括依次层叠的衬底，n型覆盖层，有源层，p型覆盖层和多欧姆接触层。 多欧姆接触层包括一个或多个堆叠结构，每个层叠结构包括重复堆叠在p型覆盖层上的改性金属层和透明导电薄膜层。 改性金属层由Ag基材料形成。

公开(公告)号：US07491564B2

公开(公告)日：2009-02-17

申请号：US11698193

申请日：2007-01-26

申请人： Tae-yeon Seong ,  June-o Song

发明人： Tae-yeon Seong ,  June-o Song

IPC分类号： H01L21/00

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L33/32

摘要： A flip-chip light emitting device and a method of manufacturing thereof are provided. The flip-chip nitride light emitting device includes a substrate, an n type clad layer, an active layer, a p type clad layer, a multi ohmic contact layer, and a reflective layer, which are stacked in this order, wherein the multi ohmic contact layer is obtained by repeatedly stacking at least one stack unit of a reforming metal layer and a transparent conductive thin film, and wherein the reforming metal layer mainly contains silver (Ag). According to the flip-chip light emitting device and the method of manufacturing thereof, since the ohmic contact characteristics associated with a p type clad layer can be improved, it is possible to increase wire bonding efficiency and yield in a packaging process. In addition, since a low non-contact resistance and a good current-voltage characteristic can be obtained, it is possible to improve light emitting efficiency and to expand life time of the flip-chip light emitting device.

摘要翻译： 提供了一种倒装芯片发光器件及其制造方法。 倒装氮化物发光器件包括依次堆叠的衬底，n型覆盖层，有源层，ap型覆盖层，多欧姆接触层和反射层，其中多欧姆接触 通过重复堆叠重整金属层和透明导电薄膜的至少一个堆叠单元获得层，其中重整金属层主要含有银（Ag）。 根据倒装芯片发光器件及其制造方法，由于能够提高与p型覆盖层相关的欧姆接触特性，所以能够提高封装工序中的引线接合效率和收率。 此外，由于可以获得低的非接触电阻和良好的电流 - 电压特性，所以可以提高发光效率并延长倒装芯片发光器件的使用寿命。

公开(公告)号：US07482639B2

公开(公告)日：2009-01-27

申请号：US10984855

申请日：2004-11-10

申请人： June-o Song ,  Tae-yeon Seong

发明人： June-o Song ,  Tae-yeon Seong

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： Provided are a nitride-based light-emitting device including a transparent electrode made of a transparent conductive oxide having a higher work function than indium tin oxide and a method of manufacturing the same. The nitride-based light-emitting device has a sequentially stacked structure of a substrate, an n-type clad layer, an active layer, a p-type clad layer, and an ohmic contact layer. The ohmic contact layer is formed as a film made of a transparent conductive oxide having a higher work function than indium tin oxide or as a film made of the transparent conductive oxide doped with a metal dopant. Therefore, ohmic contact characteristics with the p-type clad layer are enhanced, thereby ensuring excellent current-voltage characteristics. Furthermore, the high light transmittance of the transparent electrode can increase the emission efficiency of the device.

摘要翻译： 提供了一种氮化物系发光器件及其制造方法，该氮化物系发光器件包括由比氧化铟锡更高的功函数的透明导电氧化物制成的透明电极。 氮化物系发光器件具有基板，n型覆盖层，有源层，p型覆盖层和欧姆接触层的顺序层叠结构。 欧姆接触层形成为具有比铟锡氧化物更高的功函数的透明导电氧化物或由掺杂有金属掺杂剂的透明导电氧化物制成的膜制成的膜。 因此，与p型覆盖层的欧姆接触特性提高，从而确保优异的电流 - 电压特性。 此外，透明电极的高透光率可以提高器件的发光效率。

公开(公告)号：US20080299687A1

公开(公告)日：2008-12-04

申请号：US12180312

申请日：2008-07-25

申请人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

发明人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.

摘要翻译： 提供了一种顶发射N型发光器件及其制造方法。 该器件包括依次层叠的衬底，n型覆盖层，有源层，p型覆盖层和多欧姆接触层。 多欧姆接触层包括一个或多个堆叠结构，每个层叠结构包括重复堆叠在p型覆盖层上的改性金属层和透明导电薄膜层。 改性金属层由Ag基材料形成。

公开(公告)号：US20070122925A1

公开(公告)日：2007-05-31

申请号：US11698193

申请日：2007-01-26

申请人： Tae-yeon Seong ,  June-o Song

发明人： Tae-yeon Seong ,  June-o Song

IPC分类号： H01L21/00

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L33/32

摘要： A flip-chip light emitting device and a method of manufacturing thereof are provided. The flip-chip nitride light emitting device includes a substrate, an n type clad layer, an active layer, a p type clad layer, a multi ohmic contact layer, and a reflective layer, which are stacked in this order, wherein the multi ohmic contact layer is obtained by repeatedly stacking at least one stack unit of a reforming metal layer and a transparent conductive thin film, and wherein the reforming metal layer mainly contains silver (Ag). According to the flip-chip light emitting device and the method of manufacturing thereof, since the ohmic contact characteristics associated with a p type clad layer can be improved, it is possible to increase wire bonding efficiency and yield in a packaging process. In addition, since a low non-contact resistance and a good current-voltage characteristic can be obtained, it is possible to improve light emitting efficiency and to expand life time of the flip-chip light emitting device.

公开(公告)号：US20050167681A1

公开(公告)日：2005-08-04

申请号：US10978811

申请日：2004-11-02

申请人： Joon-seop Kwak ,  Ok-hyun Nam ,  Tae-yeon Seong ,  June-o Song

发明人： Joon-seop Kwak ,  Ok-hyun Nam ,  Tae-yeon Seong ,  June-o Song

IPC分类号： H01L21/285 ,  H01L29/20 ,  H01L29/45 ,  H01L33/14 ,  H01L33/32 ,  H01L33/42 ,  H01S5/042 ,  H01S5/323 ,  H01L29/15

CPC分类号： H01L33/42 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/32341

摘要： Provided are an electrode layer, a light emitting device including the electrode layer, and a method of forming the electrode layer. The electrode layer includes a first electrode layer and a second electrode layer, which are sequentially stacked, and the first electrode layer is formed of indium oxide added by an additive element. Also, the additive element includes at least one selected from the group consisting of Mg, Ag, Zn, Sc, Hf, Zr, Te, Se, Ta, W, Nb, Cu, Si, Ni, Co, Mo, Cr, Mn, Hg, Pr, and La.

摘要翻译： 提供电极层，包括电极层的发光器件和形成电极层的方法。 电极层包括依次堆叠的第一电极层和第二电极层，第一电极层由添加元素添加的氧化铟形成。 此外，添加元素包括选自Mg，Ag，Zn，Sc，Hf，Zr，Te，Se，Ta，W，Nb，Cu，Si，Ni，Co，Mo，Cr，Mn中的至少一种 ，Hg，Pr和La。

公开(公告)号：US20050104077A1

公开(公告)日：2005-05-19

申请号：US10984855

申请日：2004-11-10

申请人： June-o Song ,  Tae-yeon Seong

发明人： June-o Song ,  Tae-yeon Seong

IPC分类号： H01L33/06 ,  H01L33/32 ,  H01L33/42 ,  H01L29/22

CPC分类号： H01L33/42 ,  H01L33/32

摘要： Provided are a nitride-based light-emitting device including a transparent electrode made of a transparent conductive oxide having a higher work function than indium tin oxide and a method of manufacturing the same. The nitride-based light-emitting device has a sequentially stacked structure of a substrate, an n-type clad layer, an active layer, a p-type clad layer, and an ohmic contact layer. The ohmic contact layer is formed as a film made of a transparent conductive oxide having a higher work function than indium tin oxide or as a film made of the transparent conductive oxide doped with a metal dopant. Therefore, ohmic contact characteristics with the p-type clad layer are enhanced, thereby ensuring excellent current-voltage characteristics. Furthermore, the high light transmittance of the transparent electrode can increase the emission efficiency of the device.

摘要翻译： 提供了一种氮化物系发光器件及其制造方法，该氮化物系发光器件包括由比氧化铟锡更高的功函数的透明导电氧化物制成的透明电极。 氮化物系发光器件具有基板，n型覆盖层，有源层，p型覆盖层和欧姆接触层的顺序层叠结构。 欧姆接触层形成为具有比铟锡氧化物更高的功函数的透明导电氧化物或由掺杂有金属掺杂剂的透明导电氧化物制成的膜制成的膜。 因此，与p型覆盖层的欧姆接触特性提高，从而确保优异的电流 - 电压特性。 此外，透明电极的高透光率可以提高器件的发光效率。

公开(公告)号：US07737456B2

公开(公告)日：2010-06-15

申请号：US11808172

申请日：2007-06-07

申请人： June-o Song ,  Tae-yeon Seong ,  Kyoung-kook Kim ,  Hyun-gi Hong ,  Kwang-ki Choi ,  Hyun-soo Kim

发明人： June-o Song ,  Tae-yeon Seong ,  Kyoung-kook Kim ,  Hyun-gi Hong ,  Kwang-ki Choi ,  Hyun-soo Kim

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.

摘要翻译： 提供了多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法。 多反射层电极可以包括在p型半导体层上的反射层，反射层上的APL（聚集保护层），以防止或阻止反射层的聚集，并且反射层与 APL，以阻止APL的扩散。