公开(公告)号：US20080093617A1

公开(公告)日：2008-04-24

申请号：US11808172

申请日：2007-06-07

申请人： June-o Song ,  Tae-yeon Seong ,  Kyoung-kook Kim ,  Hyun-gi Hong ,  Kwang-ki Choi ,  Hyun-soo Kim

发明人： June-o Song ,  Tae-yeon Seong ,  Kyoung-kook Kim ,  Hyun-gi Hong ,  Kwang-ki Choi ,  Hyun-soo Kim

IPC分类号： H01L33/00 ,  H01L21/283 ,  H01L23/48

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.

摘要翻译： 提供了多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法。 多反射层电极可以包括在p型半导体层上的反射层，反射层上的APL（聚集保护层），以防止或阻止反射层的聚集，并且反射层与 APL，以阻止APL的扩散。

公开(公告)号：US07736924B2

公开(公告)日：2010-06-15

申请号：US12458136

申请日：2009-07-01

申请人： June-o Song ,  Tae-yeon Seong ,  Kyoung-kook Kim ,  Hyun-gi Hong ,  Kwang-ki Choi ,  Hyun-soo Kim

发明人： June-o Song ,  Tae-yeon Seong ,  Kyoung-kook Kim ,  Hyun-gi Hong ,  Kwang-ki Choi ,  Hyun-soo Kim

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.

公开(公告)号：US07737456B2

公开(公告)日：2010-06-15

申请号：US11808172

申请日：2007-06-07

申请人： June-o Song ,  Tae-yeon Seong ,  Kyoung-kook Kim ,  Hyun-gi Hong ,  Kwang-ki Choi ,  Hyun-soo Kim

发明人： June-o Song ,  Tae-yeon Seong ,  Kyoung-kook Kim ,  Hyun-gi Hong ,  Kwang-ki Choi ,  Hyun-soo Kim

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.

摘要翻译： 提供了多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法。 多反射层电极可以包括在p型半导体层上的反射层，反射层上的APL（聚集保护层），以防止或阻止反射层的聚集，并且反射层与 APL，以阻止APL的扩散。

公开(公告)号：US07989244B2

公开(公告)日：2011-08-02

申请号：US11802482

申请日：2007-05-23

申请人： Kyoung-kook Kim ,  Kwang-ki Choi ,  June-o Song ,  Suk-ho Yoon ,  Kwang-hyeon Baik ,  Hyun-soo Kim

发明人： Kyoung-kook Kim ,  Kwang-ki Choi ,  June-o Song ,  Suk-ho Yoon ,  Kwang-hyeon Baik ,  Hyun-soo Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01S5/0213 ,  H01S5/0217

摘要： Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer, forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer, and removing the substrate from the semiconductor device by wet etching the sacrificial layer.

摘要翻译： 提供了一种制造具有提高的效率和增加的输出特性的氮化物基半导体发光器件的方法。 该方法可以包括在衬底上形成具有湿蚀刻性质的牺牲层，在牺牲层上形成保护层，在用于晶体生长的反应气体气氛中保护牺牲层，并且促进要形成的半导体层的外延生长 在保护层上，在保护层上形成包括n型半导体层，有源层和p型半导体层的半导体器件，并且通过湿式蚀刻牺牲层从半导体器件去除衬底。

公开(公告)号：US20080038857A1

公开(公告)日：2008-02-14

申请号：US11802482

申请日：2007-05-23

申请人： Kyoung-kook Kim ,  Kwang-ki Choi ,  June-o Song ,  Suk-ho Yoon ,  Kwang-hyeon Baik ,  Hyun-soo Kim

发明人： Kyoung-kook Kim ,  Kwang-ki Choi ,  June-o Song ,  Suk-ho Yoon ,  Kwang-hyeon Baik ,  Hyun-soo Kim

IPC分类号： H01L21/311

CPC分类号： H01L33/0079 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01S5/0213 ,  H01S5/0217

摘要： Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having increased efficiency and increased output properties. The method may include forming a sacrificial layer having a wet etching property on a substrate, forming a protective layer on the sacrificial layer, protecting the sacrificial layer in a reaction gas atmosphere for crystal growth, and facilitating epitaxial growth of a semiconductor layer to be formed on the protective layer, forming a semiconductor device including an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on the protective layer, and removing the substrate from the semiconductor device by wet etching the sacrificial layer.

摘要翻译： 提供了一种制造具有提高的效率和增加的输出特性的氮化物基半导体发光器件的方法。 该方法可以包括在衬底上形成具有湿蚀刻性质的牺牲层，在牺牲层上形成保护层，在用于晶体生长的反应气体气氛中保护牺牲层，并且促进要形成的半导体层的外延生长 在保护层上，在保护层上形成包括n型半导体层，有源层和p型半导体层的半导体器件，并且通过湿式蚀刻牺牲层从半导体器件去除衬底。

公开(公告)号：US20080113462A1

公开(公告)日：2008-05-15

申请号：US11882259

申请日：2007-07-31

申请人： Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

发明人： Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

IPC分类号： H01L21/02

CPC分类号： H01L33/0079 ,  H01L33/44

摘要： Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.

摘要翻译： 提供一种垂直发光装置的制造方法。 制造垂直发光器件的方法可以包括在衬底上形成包括n型半导体层，有源层和p型半导体层的发射层，形成将发光层划分成发光器件的第一沟槽 其中发射层保留在第一沟槽的下部上的单元到期望的或可选的预定厚度，在发射层上形成钝化层，在p型半导体层上形成p型电极 发射层，在钝化层和p型电极上形成金属支撑层，去除衬底，当发射层的表面通过去除衬底而暴露时去除发射层的剩余部分，形成n型 电极，并且切割金属支撑层以将发光层划分为发光器件单元。

公开(公告)号：US07781246B2

公开(公告)日：2010-08-24

申请号：US11882259

申请日：2007-07-31

申请人： Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

发明人： Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/44

摘要： Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.

摘要翻译： 提供一种垂直发光装置的制造方法。 制造垂直发光器件的方法可以包括在衬底上形成包括n型半导体层，有源层和p型半导体层的发射层，形成将发光层划分成发光器件的第一沟槽 其中发射层保留在第一沟槽的下部上的单元到期望的或可选的预定厚度，在发射层上形成钝化层，在p型半导体层上形成p型电极 发射层，在钝化层和p型电极上形成金属支撑层，去除衬底，当发射层的表面通过去除衬底而暴露时去除发射层的剩余部分，形成n型 电极，并且切割金属支撑层以将发光层划分为发光器件单元。

公开(公告)号：US07888153B2

公开(公告)日：2011-02-15

申请号：US12805132

申请日：2010-07-14

申请人： Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

发明人： Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

IPC分类号： H01L21/00

CPC分类号： H01L33/0079 ,  H01L33/44

摘要： Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.

摘要翻译： 提供一种垂直发光装置的制造方法。 制造垂直发光器件的方法可以包括在衬底上形成包括n型半导体层，有源层和p型半导体层的发射层，形成将发光层划分成发光器件的第一沟槽 其中发射层保留在第一沟槽的下部上的单元到期望的或可选的预定厚度，在发射层上形成钝化层，在p型半导体层上形成p型电极 发射层，在钝化层和p型电极上形成金属支撑层，去除衬底，当发射层的表面通过去除衬底而暴露时去除发射层的剩余部分，形成n型 电极，并且切割金属支撑层以将发光层划分为发光器件单元。

公开(公告)号：US20100279448A1

公开(公告)日：2010-11-04

申请号：US12805132

申请日：2010-07-14

申请人： Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

发明人： Hyun-soo Kim ,  Kyoung-kook Kim ,  Hyung-kun Kim ,  Kwang-ki Choi ,  Jeong-wook Lee

IPC分类号： H01L21/78

CPC分类号： H01L33/0079 ,  H01L33/44

摘要： Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.

公开(公告)号：US06790693B2

公开(公告)日：2004-09-14

申请号：US10420704

申请日：2003-04-23

申请人： Kwang-ki Choi ,  Jae-hee Cho

发明人： Kwang-ki Choi ,  Jae-hee Cho

IPC分类号： H01L2100

CPC分类号： H01S5/028 ,  H01L33/46 ,  H01S5/0287 ,  H01S5/125

摘要： A laser diode that uses air as a reflective layer, thereby enhancing reflectance with respect to an oscillating laser beam, and a method for fabricating such a laser diode are provided. The laser diode includes a substrate, a laser oscillating layer formed on the substrate, an upper electrode formed on the laser oscillating layer, and a reflective layer formed at one side of the laser oscillating layer, wherein the reflective layer comprises air layers. According to the laser diode and the method for fabricating the same, it is possible to form a reflective layer having a higher reflectivity with a reduced number of pairs of reflective layers, thereby making a laser diode whose threshold voltage is reduced and which can produce a high-output laser beam.

摘要翻译： 提供使用空气作为反射层的激光二极管，从而提高相对于振荡激光束的反射率，以及制造这种激光二极管的方法。 激光二极管包括基板，形成在基板上的激光振荡层，形成在激光振荡层上的上电极和形成在激光振荡层一侧的反射层，其中反射层包括空气层。 根据激光二极管及其制造方法，可以形成具有较低反射率的反射层，反射层数减少的反射层，从而形成阈值电压降低的激光二极管，并可产生 高输出激光束。