公开(公告)号：US20080093617A1

公开(公告)日：2008-04-24

申请号：US11808172

申请日：2007-06-07

申请人： June-o Song ,  Tae-yeon Seong ,  Kyoung-kook Kim ,  Hyun-gi Hong ,  Kwang-ki Choi ,  Hyun-soo Kim

发明人： June-o Song ,  Tae-yeon Seong ,  Kyoung-kook Kim ,  Hyun-gi Hong ,  Kwang-ki Choi ,  Hyun-soo Kim

IPC分类号： H01L33/00 ,  H01L21/283 ,  H01L23/48

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.

摘要翻译： 提供了多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法。 多反射层电极可以包括在p型半导体层上的反射层，反射层上的APL（聚集保护层），以防止或阻止反射层的聚集，并且反射层与 APL，以阻止APL的扩散。

公开(公告)号：US07736924B2

公开(公告)日：2010-06-15

申请号：US12458136

申请日：2009-07-01

申请人： June-o Song ,  Tae-yeon Seong ,  Kyoung-kook Kim ,  Hyun-gi Hong ,  Kwang-ki Choi ,  Hyun-soo Kim

发明人： June-o Song ,  Tae-yeon Seong ,  Kyoung-kook Kim ,  Hyun-gi Hong ,  Kwang-ki Choi ,  Hyun-soo Kim

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.

公开(公告)号：US07737456B2

公开(公告)日：2010-06-15

申请号：US11808172

申请日：2007-06-07

申请人： June-o Song ,  Tae-yeon Seong ,  Kyoung-kook Kim ,  Hyun-gi Hong ,  Kwang-ki Choi ,  Hyun-soo Kim

发明人： June-o Song ,  Tae-yeon Seong ,  Kyoung-kook Kim ,  Hyun-gi Hong ,  Kwang-ki Choi ,  Hyun-soo Kim

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.

摘要翻译： 提供了多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法。 多反射层电极可以包括在p型半导体层上的反射层，反射层上的APL（聚集保护层），以防止或阻止反射层的聚集，并且反射层与 APL，以阻止APL的扩散。

公开(公告)号：US07180094B2

公开(公告)日：2007-02-20

申请号：US10957704

申请日：2004-10-05

申请人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

发明人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

IPC分类号： H01L29/04

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/405 ,  H01L2933/0016

摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I–V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.

摘要翻译： 提供一种氮化物系发光器件及其制造方法。 氮化物系发光器件具有在衬底上依次形成至少n包层，有源层和p包层的结构。 发光装置还包括由含有含锌（Zn）的氧化物构成的欧姆接触层，该氧化物含有形成在p包覆层上的p型掺杂剂。 制造氮化物系发光器件的方法包括在p包覆层上形成由含有p型掺杂剂的含Zn氧化物构成的欧姆接触层，形成欧姆接触层并退火所得到的结构。 基于氮化物的发光器件和制造方法通过改善与p型覆层的欧姆接触而提供优异的I-V特性，同时由于透明电极的高透光率而显着提高了器件的发光效率。

公开(公告)号：US20050199895A1

公开(公告)日：2005-09-15

申请号：US11077536

申请日：2005-03-11

申请人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

发明人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

IPC分类号： H01L21/28 ,  H01L27/15 ,  H01L29/22 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01S5/323

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0016 ,  H01S5/3211 ,  H01S5/32341

摘要： A nitride-based light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer, a grid cell layer and an ohmic contact layer sequentially formed on the substrate. The grid cell layer has separated, conducting particle type cells with a size of less than 30 micrometers buried in the ohmic contact layer. The nitride-based light-emitting device and the method of manufacturing the same improve the characteristics of ohmic contact on the p-cladding layer, thereby increasing luminous efficiency and life span of the device while simplifying a manufacturing process by omitting an activation process after wafer growth.

摘要翻译： 氮化物系发光元件及其制造方法。 发光装置包括基板，以及顺序地形成在基板上的n包层，有源层，p包覆层，网格单元层和欧姆接触层。 格栅单元层具有隔离的导电粒子型电池，其尺寸小于30微米，埋入欧姆接触层中。 氮化物系发光器件及其制造方法提高了p型覆层的欧姆接触特性，从而提高了器件的发光效率和寿命，同时通过省略晶片上的激活工艺简化了制造工艺 成长。

公开(公告)号：US07485479B2

公开(公告)日：2009-02-03

申请号：US11649236

申请日：2007-01-04

申请人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

发明人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

IPC分类号： H01L21/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/405 ,  H01L2933/0016

摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I-V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.

摘要翻译： 提供一种氮化物系发光器件及其制造方法。 氮化物系发光器件具有在衬底上依次形成至少n包层，有源层和p包层的结构。 发光装置还包括由含有含锌（Zn）的氧化物构成的欧姆接触层，该氧化物含有形成在p包覆层上的p型掺杂剂。 制造氮化物系发光器件的方法包括在p包覆层上形成由含有p型掺杂剂的含Zn氧化物构成的欧姆接触层，形成欧姆接触层并退火所得到的结构。 基于氮化物的发光器件和制造方法通过改善与p型覆层的欧姆接触而提供优异的I-V特性，同时由于透明电极的高透光率而显着提高了器件的发光效率。

公开(公告)号：US20070111354A1

公开(公告)日：2007-05-17

申请号：US11649236

申请日：2007-01-04

申请人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

发明人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

IPC分类号： H01L21/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/405 ,  H01L2933/0016

摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I-V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.

公开(公告)号：US20050199888A1

公开(公告)日：2005-09-15

申请号：US11076249

申请日：2005-03-10

申请人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem ,  Jung-inn Sohn

发明人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem ,  Jung-inn Sohn

IPC分类号： H01L21/00 ,  H01L27/15 ,  H01L33/06 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H05B33/26

CPC分类号： H01L33/42 ,  H01L33/387 ,  H01L2933/0016

摘要： A top-emitting nitride-based light-emitting device and a method of manufacturing the same. The top-emitting nitride-based light-emitting device having a substrate, an n-cladding layer, an active layer, and a p-cladding layer sequentially formed includes: a grid cell layer formed on the p-cladding layer by a grid array of separated cells formed from a conducting material with a width of less than 30 micrometers to improve electrical and optical characteristics; a surface protective layer that is formed on the p-cladding layer and covers at least regions between the cells to protect a surface of the p-cladding layer; and a transparent conducting layer formed on the surface protective layer and the grid cell layer using a transparent conducting material. The light-emitting device and the method of manufacturing the same provide an improved ohmic contact to the p-cladding layer, excellent I-V characteristics, and high light transmittance, thus increasing luminous efficiency of the device.

摘要翻译： 顶部发光氮化物系发光器件及其制造方法。 具有依次形成的基板，n包层，有源层和p型包覆层的顶部发射氮化物系发光器件包括：栅格单元层，其通过栅格阵列形成在p包层上 由宽度小于30微米的导电材料形成的分离的电池，以改善电气和光学特性; 表面保护层，其形成在所述p包覆层上并且覆盖所述电池之间的至少区域以保护所述p型覆层的表面; 以及使用透明导电材料形成在表面保护层和栅极电池层上的透明导电层。 发光器件及其制造方法提供了对p型覆层的改善的欧姆接触，优异的I-V特性和高透光率，从而提高了器件的发光效率。

公开(公告)号：US20090124030A1

公开(公告)日：2009-05-14

申请号：US12275484

申请日：2008-11-21

申请人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

发明人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

IPC分类号： H01L21/00

CPC分类号： H01L33/40 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0016 ,  H01S5/3211 ,  H01S5/32341

摘要： A nitride-based light-emitting device and a method of manufacturing the same. The light-emitting device includes a substrate, and an n-cladding layer, an active layer, a p-cladding layer, a grid cell layer and an ohmic contact layer sequentially formed on the substrate. The grid cell layer has separated, conducting particle type cells with a size of less than 30 micrometers buried in the ohmic contact layer. The nitride-based light-emitting device and the method of manufacturing the same improve the characteristics of ohmic contact on the p-cladding layer, thereby increasing luminous efficiency and life span of the device while simplifying a manufacturing process by omitting an activation process after wafer growth.

摘要翻译： 氮化物系发光元件及其制造方法。 发光装置包括基板，以及顺序地形成在基板上的n包层，有源层，p包覆层，网格单元层和欧姆接触层。 格栅单元层具有隔离的导电粒子型电池，其尺寸小于30微米，埋入欧姆接触层中。 氮化物系发光器件及其制造方法提高了p型覆层的欧姆接触特性，从而提高了器件的发光效率和寿命，同时通过省略晶片上的激活工艺简化了制造工艺 成长。

公开(公告)号：US20050077537A1

公开(公告)日：2005-04-14

申请号：US10957704

申请日：2004-10-05

申请人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

发明人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/42 ,  H01L21/00 ,  H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/405 ,  H01L2933/0016

摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I-V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.

摘要翻译： 提供一种氮化物系发光器件及其制造方法。 氮化物系发光器件具有在衬底上依次形成至少n包层，有源层和p包层的结构。 发光装置还包括由含有含锌（Zn）的氧化物构成的欧姆接触层，该氧化物含有形成在p包覆层上的p型掺杂剂。 制造氮化物系发光器件的方法包括在p包覆层上形成由含有p型掺杂剂的含Zn氧化物构成的欧姆接触层，形成欧姆接触层并退火所得到的结构。 基于氮化物的发光器件和制造方法通过改善与p型覆层的欧姆接触而提供优异的I-V特性，同时由于透明电极的高透光率而显着提高了器件的发光效率。