公开(公告)号：US07550374B2

公开(公告)日：2009-06-23

申请号：US11265098

申请日：2005-11-03

申请人： June-o Song ,  Dong-suk Leem ,  Tae-yeon Seong

发明人： June-o Song ,  Dong-suk Leem ,  Tae-yeon Seong

IPC分类号： H01L21/3205 ,  H01L21/28

CPC分类号： H01L33/40 ,  H01L21/28575 ,  H01L33/32 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/3054 ,  H01S5/32341

摘要： Disclosed herein is a technique for forming a high quality ohmic contact utilizable in the fabrication of short-wavelength light emitting diodes (LEDs) emitting blue and green visible light and ultraviolet light, and laser diodes (LDs) using a gallium nitride (GaN) semiconductor.The ohmic contact is formed by depositing a nickel (Ni)-based solid solution on top of a p-type gallium nitride semiconductor. The ohmic contact thus formed has an excellent current-voltage characteristic and a low specific contact resistance due to an increased effective carrier concentration around the surface of the gallium nitride layer, as well as a high transmittance in the short-wavelength region.

摘要翻译： 本文公开了一种用于形成可用于制造发射蓝色和绿色可见光和紫外光的短波长发光二极管（LED）的高质量欧姆接触的技术，以及使用氮化镓（GaN）半导体的激光二极管 。 通过在p型氮化镓半导体的顶部上沉积基于镍（Ni）的固溶体形成欧姆接触。 这样形成的欧姆接触由于在氮化镓层的表面附近增加的有效载流子浓度以及在短波长区域中的高透射率，具有优异的电流 - 电压特性和低的比接触电阻。

公开(公告)号：US20080093617A1

公开(公告)日：2008-04-24

申请号：US11808172

申请日：2007-06-07

申请人： June-o Song ,  Tae-yeon Seong ,  Kyoung-kook Kim ,  Hyun-gi Hong ,  Kwang-ki Choi ,  Hyun-soo Kim

发明人： June-o Song ,  Tae-yeon Seong ,  Kyoung-kook Kim ,  Hyun-gi Hong ,  Kwang-ki Choi ,  Hyun-soo Kim

IPC分类号： H01L33/00 ,  H01L21/283 ,  H01L23/48

CPC分类号： H01L33/405 ,  H01L33/32

摘要： Provided are a multiple reflection layer electrode, a compound semiconductor light emitting device having the same and methods of fabricating the same. The multiple reflection layer electrode may include a reflection layer on a p-type semiconductor layer, an APL (agglomeration protecting layer) on the reflection layer so as to prevent or retard agglomeration of the reflection layer, and a diffusion barrier between the reflection layer and the APL so as to retard diffusion of the APL.

摘要翻译： 提供了多反射层电极，具有该反射层电极的化合物半导体发光器件及其制造方法。 多反射层电极可以包括在p型半导体层上的反射层，反射层上的APL（聚集保护层），以防止或阻止反射层的聚集，并且反射层与 APL，以阻止APL的扩散。

公开(公告)号：US07205576B2

公开(公告)日：2007-04-17

申请号：US10930915

申请日：2004-09-01

申请人： June-o Song ,  Dong-seok Leem ,  Tae-yeon Seong

发明人： June-o Song ,  Dong-seok Leem ,  Tae-yeon Seong

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0016

摘要： A light emitting device and a method of manufacturing the same are provided. A light emitting device has a structure wherein a substrate, an n-type clad layer, a light emitting layer, a p-type clad layer, an ohmic contact layer, and a reflective layer are successively stacked. The ohmic contact layer is formed by adding an additional element to an indium oxide. According to the light emitting device and the method of manufacturing the same, the characteristics of ohmic contact with a p-type clad layer is improved, thus increasing the efficiency and yield of wire bonding during packaging FCLEDS. Also, it is possible to increase the light emitting efficiency and life span of light emitting devices due to the low contactless resistance and the excellent electric current and voltage characteristic.

公开(公告)号：US07180094B2

公开(公告)日：2007-02-20

申请号：US10957704

申请日：2004-10-05

申请人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

发明人： Tae-yeon Seong ,  Kyoung-kook Kim ,  June-o Song ,  Dong-seok Leem

IPC分类号： H01L29/04

CPC分类号： H01L33/42 ,  H01L33/32 ,  H01L33/405 ,  H01L2933/0016

摘要： Provided are a nitride-based light emitting device and a method of manufacturing the same. The nitride-based light emitting device has a structure in which at least an n-cladding layer, an active layer, and a p-cladding layer are sequentially formed on a substrate. The light emitting device further includes an ohmic contact layer composed of a zinc (Zn)-containing oxide containing a p-type dopant formed on the p-cladding layer. The method of manufacturing the nitride-based light emitting device includes forming an ohmic contact layer composed of Zn-containing oxide containing a p-type dopant on the p-cladding layer, the ohmic contact layer being made and annealing the resultant structure. The nitride-based light emitting device and manufacturing method provide excellent I–V characteristics by improving ohmic contact with a p-cladding layer while significantly enhancing light emission efficiency of the device due to high light transmittance of a transparent electrode.

摘要翻译： 提供一种氮化物系发光器件及其制造方法。 氮化物系发光器件具有在衬底上依次形成至少n包层，有源层和p包层的结构。 发光装置还包括由含有含锌（Zn）的氧化物构成的欧姆接触层，该氧化物含有形成在p包覆层上的p型掺杂剂。 制造氮化物系发光器件的方法包括在p包覆层上形成由含有p型掺杂剂的含Zn氧化物构成的欧姆接触层，形成欧姆接触层并退火所得到的结构。 基于氮化物的发光器件和制造方法通过改善与p型覆层的欧姆接触而提供优异的I-V特性，同时由于透明电极的高透光率而显着提高了器件的发光效率。

公开(公告)号：US20050133809A1

公开(公告)日：2005-06-23

申请号：US11011154

申请日：2004-12-15

申请人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

发明人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

IPC分类号： H01L21/28 ,  H01L33/06 ,  H01L33/32 ,  H01L33/42 ,  H01L23/48

CPC分类号： H01L33/42 ,  H01L33/32

摘要： Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.

摘要翻译： 提供了一种顶发射N型发光器件及其制造方法。 该器件包括依次层叠的衬底，n型覆盖层，有源层，p型覆盖层和多欧姆接触层。 多欧姆接触层包括一个或多个堆叠结构，每个层叠结构包括重复堆叠在p型覆盖层上的改性金属层和透明导电薄膜层。 改性金属层由Ag基材料形成。

公开(公告)号：US20050045907A1

公开(公告)日：2005-03-03

申请号：US10891014

申请日：2004-07-15

申请人： June-o Song ,  Tae-yeon Seong

发明人： June-o Song ,  Tae-yeon Seong

IPC分类号： H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/34 ,  H01L33/42 ,  H01L33/00 ,  H01L21/00

CPC分类号： H01L33/405 ,  H01L33/32

摘要： A nitride-based light emitting device having a light emitting layer between an N-type clad layer and a P-type clad layer is provided. The light emitting device including: a reflective layer which reflects light emitting from the light emitting layer; and at least one metal layer which is formed between the reflective layer and the P-type clad layer.

摘要翻译： 提供一种在N型覆盖层和P型覆盖层之间具有发光层的氮化物系发光器件。 所述发光装置包括：反射从所述发光层发射的光的反射层; 以及形成在所述反射层与所述P型覆盖层之间的至少一个金属层。

公开(公告)号：US07687908B2

公开(公告)日：2010-03-30

申请号：US10886686

申请日：2004-07-09

申请人： Dong-seok Leem ,  June-o Song ,  Sang-ho Kim ,  Tae-yeon Seong

发明人： Dong-seok Leem ,  June-o Song ,  Sang-ho Kim ,  Tae-yeon Seong

IPC分类号： H01L23/48

CPC分类号： H01L33/42 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L33/0095 ,  H01L33/32 ,  H01L2924/0002 ,  H01L2924/00

摘要： A thin film electrode for ohmic contact of a p-type GaN semiconductor includes first and second electrode layers sequentially stacked on a p-type GaN layer. The first electrode layer may include an Ni-based alloy, a Cu-based alloy, a Co-based alloy, or a solid solution capable of forming a p-type thermo-electronic oxide or may include a Ni-oxide doped with at least one selected from Al, Ga, and In. The second electrode layer may include at least one selected from the group consisting of Au, Pd, Pt, Ru, Re, Sc, Mg, Zn, V, Hf, Ta, Rh, Ir, W, Ti, Ag, Cr, Mo, Nb, Ca, Na, Sb, Li, In, Sn, Al, Ni, Cu, and Co. Furthermore, a method of fabricating the thin film electrode is provided.

摘要翻译： 用于p型GaN半导体的欧姆接触的薄膜电极包括顺序堆叠在p型GaN层上的第一和第二电极层。 第一电极层可以包括Ni基合金，Cu基合金，Co基合金或能够形成p型热电氧化物的固溶体，或者可以包括至少掺杂有氧化镍的Ni氧化物 一个选自Al，Ga和In。 第二电极层可以包括选自Au，Pd，Pt，Ru，Re，Sc，Mg，Zn，V，Hf，Ta，Rh，Ir，W，Ti，Ag，Cr，Mo中的至少一种 ，Nb，Ca，Na，Sb，Li，In，Sn，Al，Ni，Cu和Co。此外，提供了制造薄膜电极的方法。

公开(公告)号：US07541207B2

公开(公告)日：2009-06-02

申请号：US11714843

申请日：2007-03-07

申请人： June-o Song ,  Dong-seok Leem ,  Tae-yeon Seong

发明人： June-o Song ,  Dong-seok Leem ,  Tae-yeon Seong

IPC分类号： H01L21/285 ,  H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42 ,  H01L2933/0016

摘要： A light emitting device and a method of manufacturing the same are provided. A light emitting device has a structure wherein a substrate, an n-type clad layer, a light emitting layer, a p-type clad layer, an ohmic contact layer, and a reflective layer are successively stacked. The ohmic contact layer is formed by adding an additional element to an indium oxide. According to the light emitting device and the method of manufacturing the same, the characteristics of ohmic contact with a p-type clad layer is improved, thus increasing the efficiency and yield of wire bonding during packaging FCLEDS. Also, it is possible to increase the light emitting efficiency and life span of light emitting devices due to the low contactless resistance and the excellent electric current and voltage characteristic.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件具有依次层叠基板，n型覆盖层，发光层，p型覆盖层，欧姆接触层和反射层的结构。 通过向氧化铟中加入附加元素来形成欧姆接触层。 根据发光器件及其制造方法，提高了与p型覆盖层的欧姆接触的特性，从而提高了包装FCLEDS期间引线接合的效率和产率。 此外，由于低的非接触电阻和优异的电流和电压特性，可以提高发光器件的发光效率和寿命。

公开(公告)号：US07462877B2

公开(公告)日：2008-12-09

申请号：US10891014

申请日：2004-07-15

申请人： June-o Song ,  Tae-yeon Seong

发明人： June-o Song ,  Tae-yeon Seong

IPC分类号： H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32

摘要： A nitride-based light emitting device having a light emitting layer between an N-type clad layer and a P-type clad layer is provided. The light emitting device including: a reflective layer which reflects light emitting from the light emitting layer; and at least one metal layer which is formed between the reflective layer and the P-type clad layer.

摘要翻译： 提供一种在N型覆盖层和P型覆盖层之间具有发光层的氮化物系发光器件。 所述发光装置包括：反射从所述发光层发射的光的反射层; 以及形成在所述反射层与所述P型覆盖层之间的至少一个金属层。

公开(公告)号：US07417264B2

公开(公告)日：2008-08-26

申请号：US11011154

申请日：2004-12-15

申请人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

发明人： June-o Song ,  Tae-yeon Seong ,  Joon-seop Kwak ,  Woong-ki Hong

IPC分类号： H01L33/00

CPC分类号： H01L33/42 ,  H01L33/32

摘要： Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.

摘要翻译： 提供了一种顶发射N型发光器件及其制造方法。 该器件包括依次层叠的衬底，n型覆盖层，有源层，p型覆盖层和多欧姆接触层。 多欧姆接触层包括一个或多个堆叠结构，每个层叠结构包括重复堆叠在p型覆盖层上的改性金属层和透明导电薄膜层。 改性金属层由Ag基材料形成。