公开(公告)号：US08383452B2

公开(公告)日：2013-02-26

申请号：US13017498

申请日：2011-01-31

申请人： Tomonori Aoyama ,  Kiyotaka Miyano ,  Yusuke Oshiki

发明人： Tomonori Aoyama ,  Kiyotaka Miyano ,  Yusuke Oshiki

IPC分类号： H01L21/00 ,  H01L31/0376

CPC分类号： H01L29/04 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02667

摘要： In one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include depositing a first amorphous film having a first impurity, depositing a third amorphous lower-layer film on the first amorphous film, forming microcrystals on the third amorphous lower-layer film, depositing a third amorphous upper-layer film on the third amorphous lower-layer film to cover the microcrystals, depositing a second amorphous film having a second impurity on the third amorphous upper-layer film, and radiating microwaves to crystallize the third amorphous lower-layer film and the third amorphous upper-layer film to form a third crystal layer, and crystallize the first amorphous film and the second amorphous film to form a first crystal layer and a second crystal layer.

摘要翻译： 在一个实施例中，公开了一种用于制造半导体器件的方法。 该方法可以包括沉积具有第一杂质的第一非晶膜，在第一非晶膜上沉积第三非晶下层膜，在第三非晶下层膜上形成微晶，在第三非晶下层膜上沉积第三非晶上层膜 非晶下层膜覆盖微晶，在第三非晶上层膜上沉积具有第二杂质的第二非晶膜，并且辐射微波以使第三非晶下层膜和第三非晶上层膜结晶以形成 第三晶体层，并且使第一非晶膜和第二非晶膜结晶以形成第一晶体层和第二晶体层。

公开(公告)号：US20130023102A1

公开(公告)日：2013-01-24

申请号：US13415628

申请日：2012-03-08

申请人： Tomonori Aoyama ,  Kiyotaka Miyano ,  Hiroshi Nakazawa

发明人： Tomonori Aoyama ,  Kiyotaka Miyano ,  Hiroshi Nakazawa

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L21/823418 ,  H01L21/324 ,  H01L21/823431 ,  H01L29/665 ,  H01L29/6659

摘要： According to one embodiment, a method of manufacturing a semiconductor device includes forming a gate electrode on a channel region in a silicon substrate via a gate insulation film; forming a source region and a drain region in the silicon substrate so as to sandwich the channel region along a channel direction by injecting desired impurities to the silicon substrate; forming amorphous regions containing the impurities on surfaces of the source region and the drain region by amorphousizing the surfaces of the source region and the drain region; forming nickel films on the amorphous regions; and forming crystal layers containing the activated impurities and forming nickel silicide films on the crystal layers at low temperature by radiating microwaves to the amorphous regions and the nickel films.

摘要翻译： 根据一个实施例，制造半导体器件的方法包括通过栅极绝缘膜在硅衬底的沟道区上形成栅电极; 在所述硅衬底中形成源极区域和漏极区域，以便通过将期望的杂质注入所述硅衬底而沿着沟道方向夹持所述沟道区域; 通过使源极区域和漏极区域的表面非晶化，在源区域和漏极区域的表面上形成含有杂质的非晶区域; 在非晶区上形成镍膜; 并且通过向非晶区域和镍膜辐射微波，形成含有活性杂质的晶体层，并在低温下在晶体层上形成硅化镍膜。

公开(公告)号：US08093141B2

公开(公告)日：2012-01-10

申请号：US12878780

申请日：2010-09-09

申请人： Tomonori Aoyama ,  Kiyotaka Miyano

发明人： Tomonori Aoyama ,  Kiyotaka Miyano

IPC分类号： H01L21/00

CPC分类号： H01L21/02532 ,  H01L21/02667 ,  H01L21/324 ,  H01L21/823807 ,  H01L21/84 ,  H01L29/045

摘要： According to one embodiment, a method of fabricating a semiconductor device is disclosed. The method can include forming an amorphous layer on a portion of a first silicon substrate having a first plane orientation, and irradiating with micro wave on the amorphous layer to transform from the amorphous layer into a crystalline layer having the first plane orientation.

摘要翻译： 根据一个实施例，公开了制造半导体器件的方法。 该方法可以包括在具有第一平面取向的第一硅衬底的一部分上形成非晶层，并且在非晶层上照射微波以从非晶层转变为具有第一平面取向的晶体层。

公开(公告)号：US08071447B2

公开(公告)日：2011-12-06

申请号：US12704315

申请日：2010-02-11

申请人： Seiji Inumiya ,  Tomonori Aoyama

发明人： Seiji Inumiya ,  Tomonori Aoyama

IPC分类号： H01L21/336

CPC分类号： H01L21/28167 ,  H01L21/02057 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/7624 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66795 ,  H01L29/785

摘要： A semiconductor device manufacturing method includes removing an insulating film on a semiconductor substrate by etching and subsequently oxidizing a surface of the substrate by using a liquid oxidation agent without exposing this surface to an atmosphere, thereby forming a first insulating film containing an oxide of a constituent element of the substrate on the surface of the substrate; forming a second insulating film containing an aluminum oxide on the first insulating film; forming a third insulating film containing a rare earth oxide on the second insulating film; forming a high-k insulating film on the third insulating film; introducing nitrogen into the high-k insulating film to thereby make it a fourth insulating film; and conducting heat treatment to change the first through third insulating films into an insulating film made of a mixture containing aluminum, a rare earth element, the constituent element of the substrate, and oxygen.

摘要翻译： 一种半导体器件的制造方法，其特征在于，在半导体基板上通过蚀刻，通过使用液体氧化剂对所述基板的表面进行氧化而不使所述表面暴露在大气中而除去半导体基板上的绝缘膜，由此形成含有成分的氧化物的第一绝缘膜 衬底表面上的衬底元件; 在所述第一绝缘膜上形成含有氧化铝的第二绝缘膜; 在所述第二绝缘膜上形成含有稀土类氧化物的第三绝缘膜; 在第三绝缘膜上形成高k绝缘膜; 将氮引入高k绝缘膜，从而使其成为第四绝缘膜; 进行热处理，将第一至第三绝缘膜变成由含有铝，稀土元素，基板的构成元素和氧的混合物构成的绝缘膜。

公开(公告)号：US20110076842A1

公开(公告)日：2011-03-31

申请号：US12894424

申请日：2010-09-30

申请人： Kenichi YOSHINO ,  Kiyotaka Miyano ,  Tomonori Aoyama

发明人： Kenichi YOSHINO ,  Kiyotaka Miyano ,  Tomonori Aoyama

IPC分类号： H01L21/26

CPC分类号： H01L29/6659 ,  H01L21/2686 ,  H01L21/324 ,  H01L29/7833

摘要： An ion implantation is performed to implant ions into a silicon substrate, and a microwave irradiation is performed to irradiate the silicon substrate with microwaves after the ion implantation. After the microwave irradiation, the silicon substrate is transferred to a heat-treatment apparatus, where the silicon substrate is treated with heat by being irradiated with light having a pulse width ranging from 0.1 milliseconds to 100 milliseconds, both inclusive.

摘要翻译： 执行离子注入以将离子注入到硅衬底中，并且在离子注入之后进行微波照射以对微硅进行照射。 在微波照射之后，将硅衬底转移到热处理装置中，其中通过用脉冲宽度为0.1毫秒至100毫秒的光照射硅衬底，其中热处理。

公开(公告)号：US20110062528A1

公开(公告)日：2011-03-17

申请号：US12926430

申请日：2010-11-17

申请人： Tomonori Aoyama

发明人： Tomonori Aoyama

IPC分类号： H01L27/092

CPC分类号： H01L21/823835 ,  H01L29/1033

摘要： A semiconductor device includes a semiconductor substrate; a gate insulation film formed on the semiconductor substrate; a silicide gate electrode of an n-type MISFET formed on the gate insulation film; and a silicide gate electrode of a p-type MISFET formed on the gate insulation film and having a thickness smaller than that of the silicide gate electrode of the n-type MISFET, the silicide gate electrode of the p-type MISFET having a ratio of metal content higher than that of the silicide gate electrode of the n-type MISFET.

摘要翻译： 半导体器件包括半导体衬底; 形成在所述半导体基板上的栅极绝缘膜; 形成在栅极绝缘膜上的n型MISFET的硅化物栅电极; 以及形成在栅极绝缘膜上并且具有比n型MISFET的硅化物栅电极的厚度小的p型MISFET的硅化物栅电极，p型MISFET的硅化物栅电极的比例为 金属含量高于n型MISFET的硅化物栅电极。

公开(公告)号：US20100203704A1

公开(公告)日：2010-08-12

申请号：US12704315

申请日：2010-02-11

申请人： Seiji INUMIYA ,  Tomonori Aoyama

发明人： Seiji INUMIYA ,  Tomonori Aoyama

IPC分类号： H01L21/762 ,  H01L21/28

CPC分类号： H01L21/28167 ,  H01L21/02057 ,  H01L21/28088 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/7624 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66795 ,  H01L29/785

摘要： A semiconductor device manufacturing method includes: removing an insulating film on a semiconductor substrate by etching and subsequently oxidizing a surface of the semiconductor substrate by using a liquid oxidation agent without exposing this surface to an atmosphere, thereby forming a first insulating film containing an oxide of a constituent element of the semiconductor substrate on the surface of the semiconductor substrate; forming a second insulating film containing an aluminum oxide on the first insulating film; forming a third insulating film containing a rare earth oxide on the second insulating film; forming a high-k insulating film on the third insulating film; introducing nitrogen into the high-k insulating film to thereby make it a fourth insulating film; and conducting heat treatment to change the first through third insulating films into a insulating film made of a mixture containing aluminum, a rare earth element, the constituent element of the semiconductor substrate, and oxygen.

摘要翻译： 半导体器件制造方法包括：通过使用液体氧化剂蚀刻并随后氧化半导体衬底的表面而在半导体衬底上去除绝缘膜而不将该表面暴露在大气中，从而形成含有氧化物的第一绝缘膜 半导体衬底的表面上的构成元件; 在所述第一绝缘膜上形成含有氧化铝的第二绝缘膜; 在所述第二绝缘膜上形成含有稀土类氧化物的第三绝缘膜; 在第三绝缘膜上形成高k绝缘膜; 将氮引入高k绝缘膜，从而使其成为第四绝缘膜; 并且进行热处理以将第一至第三绝缘膜改变为由含有铝，稀土元素，半导体衬底的构成元素和氧的混合物制成的绝缘膜。

公开(公告)号：US20100133623A1

公开(公告)日：2010-06-03

申请号：US12626216

申请日：2009-11-25

申请人： Seiji INUMIYA ,  Tomonori Aoyama

发明人： Seiji INUMIYA ,  Tomonori Aoyama

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823857 ,  H01L29/513 ,  H01L29/517

摘要： A silicon oxynitride film is formed on entire surface of a semiconductor substrate, a lanthanum oxide film is formed on the silicon oxynitride film and the lanthanum oxide film is removed from a pMOS region. Then, a nitrided hafnium silicate film serving as a highly dielectric film is formed on the entire surface, an aluminum-containing titanium nitride film is formed, a polysilicon film is formed, and the stacked films are patterned into a gate electrode configuration. Next, impurities are introduced into a source/drain region, and an annealing for activating the impurities is utilized to diffuse the aluminum included in the aluminum-containing titanium nitride film to the interface between the silicon oxynitride film and the nitrided hafnium aluminum silicate film in the pMOS region.

摘要翻译： 在半导体衬底的整个表面上形成氧氮化硅膜，在氧氮化硅膜上形成氧化镧膜，并从pMOS区域除去氧化镧膜。 然后，在整个表面上形成用作高电介质膜的氮化铪硅酸盐膜，形成含铝的氮化钛膜，形成多晶硅膜，并将层叠的膜图案化为栅电极构造。 接下来，将杂质引入源极/漏极区域，并且利用用于激活杂质的退火将包含在含铝氮化钛膜中的铝扩散到氮氧化硅膜和氮化铪硅酸铝膜之间的界面 pMOS区域。

公开(公告)号：US07695371B2

公开(公告)日：2010-04-13

申请号：US11795713

申请日：2006-01-19

申请人： Tsutomu Kawakatsu ,  Naoto Shibata ,  Masato Saika ,  Tomonori Aoyama

发明人： Tsutomu Kawakatsu ,  Naoto Shibata ,  Masato Saika ,  Tomonori Aoyama

IPC分类号： F16D3/205

CPC分类号： F16D3/2055 ,  F16D2003/2026 ,  Y10S464/905

摘要： A constant velocity joint, where the tilt angle of a first trunnion relative to a plane crossing perpendicularly to the axis of a second shaft is set to be different from the tilt angle of a second trunnion and the tilt angle of a third trunnion. The tilt angle of the second trunnion and the tilt angle of the third trunnion are set to be equal to or different from each other, and three axes of the first to third trunnions are set to be included on a same plane.

摘要翻译： 等速万向节，其中第一耳轴相对于垂直于第二轴的轴线交叉的平面的倾斜角被设定为不同于第二耳轴的倾斜角度和第三耳轴的倾斜角度。 第二耳轴的倾斜角度和第三耳轴的倾斜角度被设定为彼此相等或不同，并且第一至第三耳轴的三个轴被设置为包括在同一平面上。

公开(公告)号：US20100030679A1

公开(公告)日：2010-02-04

申请号：US11920112

申请日：2006-05-09

申请人： Hiroyuki Morikawa ,  Tomonori Aoyama ,  Shunsuke Saruwatari ,  Pavel Poupyrev

发明人： Hiroyuki Morikawa ,  Tomonori Aoyama ,  Shunsuke Saruwatari ,  Pavel Poupyrev

IPC分类号： G06Q40/00 ,  G06F15/16

CPC分类号： G06Q30/06 ,  G06Q40/04 ,  H04L69/18

摘要： In a commodity and service trading system, a client computer 60 receives an input window from a Web server 70 connected via the Internet 72 for the user's entry of transaction data regarding a trade of commodity or service. The user's entry of transaction data on the input window is registered in the form of a user data table into a memory 33 of a transreceiver 20 (transreceiver main body 30). The transreceiver 20 enables delivery of the transaction data registered in the user data table, in parallel with reception of transaction data from another transreceiver 20B or 20C. When a commodity or service option set as an object trade and transaction conditions required for the object trade in the received transaction data match with the commodity or service option and the transaction conditions in the transaction data registered in the user data table, the received transaction data is registered in the form of a receiving data table into the memory 33. In response to the registry in the receiving data table, an alert is output in a specific alert pattern to an alert device 40 or a cellular phone 80 connected to the transreceiver 20.

摘要翻译： 在商品和服务交易系统中，客户端计算机60从经由因特网72连接的Web服务器70接收输入窗口，以便用户输入关于商品或服务的交易的交易数据。 用户将输入窗口上的交易数据输入以用户数据表的形式登记到收发信机20（收发信机主体30）的存储器33中。 与来自另一个收发器20B或20C的交易数据的接收并行地，收发器20能够传送登记在用户数据表中的交易数据。 当设置为对象交易的商品或服务选项和接收到的交易数据中的对象交易所需的交易条件与商品或服务选项和登记在用户数据表中的交易数据中的交易条件匹配时，接收到的交易数据 以接收数据表的形式登记到存储器33中。响应于接收数据表中的注册表，以特定的警报模式将警报输出到连接到收发器20的警报装置40或蜂窝电话80 。