Printing hammer driving apparatus
    42.
    发明授权
    Printing hammer driving apparatus 失效
    打印锤驱动装置

    公开(公告)号:US4392423A

    公开(公告)日:1983-07-12

    申请号:US153318

    申请日:1980-05-27

    IPC分类号: B41J9/38 B41J9/02

    CPC分类号: B41J9/38

    摘要: A printing hammer driving apparatus for high-speed printers comprises a lever member acting as a hammer operating part, an armature forming a part of a magnetic circuit, and an electromagnet forming, together with the armature, the magnetic circuit. The lever member has a rotational supporting point at the base end thereof and is made of a light-weight non-magnetic material. The armature is projected in one of the rotational directions of the lever member from the intermediate part of the lever member. The electromagnet has at least one core and an exciting coil wound on the core. A core has a magnetic pole face perpendicular to the direction of attraction of the armature and a magnetic pole face parallel to the direction of attraction of the armature. The magnetic pole face perpendicular to the direction of armature attraction is opposed with a gap to the forward end face of the armature, and the magnetic pole face parallel to the direction of armature attraction is opposed with a gap to the surface of the armatures parallel to the direction of attraction thereof.

    摘要翻译: 用于高速打印机的打印锤驱动装置包括作为锤操作部件的杠杆构件,形成磁路的一部分的电枢以及与衔铁一起形成磁路的电磁体。 杠杆构件在其基端具有旋转支撑点,并且由轻质非磁性材料制成。 电枢从杠杆构件的中间部分突出在杠杆构件的旋转方向之一上。 电磁铁具有至少一个铁芯和缠绕在铁芯上的励磁线圈。 芯具有垂直于电枢吸引方向的磁极面和平行于电枢吸引方向的磁极面。 与电枢吸引方向垂直的磁极面与电枢的前端面相对,与电枢吸引方向平行的磁极面与与电枢平行的电枢的表面相对, 吸引的方向。

    Plasma processing apparatus and plasma processing method
    43.
    发明授权
    Plasma processing apparatus and plasma processing method 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号:US07955514B2

    公开(公告)日:2011-06-07

    申请号:US11679926

    申请日:2007-02-28

    摘要: A plasma processing apparatus having a processing chamber and a sample base, and processing a sample by using plasma generated inside the processing chamber, the processing chamber being located inside a vacuum container, the sample base being located inside the processing chamber, the sample being mounted on the sample base, the plasma processing apparatus including a component member configuring inner-side wall surface of the processing chamber, and having a dielectric portion on the inner-side wall surface, an exhaustion unit for exhausting the inside of the processing chamber, and an electric-field supply unit for supplying an electric field to the component member in a state where the plasma will not be generated inside the processing chamber, wherein magnitude of the electric field supplied from the electric-field supply unit is changed rapidly while exhausting the inside of the processing chamber by the exhaustion unit.

    摘要翻译: 一种等离子体处理装置,其具有处理室和样品基底,并且通过使用在处理室内产生的等离子体处理样品,处理室位于真空容器内,样品基座位于处理室内部,样品被安装 在样品基体上,等离子体处理装置包括构成处理室的内侧壁面的构成部件,在内侧壁面上具有电介质部分,排出处理室内部的排出部,以及 电场供给单元,用于在处理室内不产生等离子体的状态下向构件部件供给电场,其中,从电场供给单元供给的电场的大小迅速变化,同时排出 通过排气单元在处理室内部。

    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    44.
    发明申请
    PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
    等离子体加工设备和等离子体处理方法

    公开(公告)号:US20080169065A1

    公开(公告)日:2008-07-17

    申请号:US11679926

    申请日:2007-02-28

    IPC分类号: C23F1/00

    摘要: A plasma processing apparatus having a processing chamber and a sample base, and processing a sample by using plasma generated inside the processing chamber, the processing chamber being located inside a vacuum container, the sample base being located inside the processing chamber, the sample being mounted on the sample base, the plasma processing apparatus including a component member configuring inner-side wall surface of the processing chamber, and having a dielectric portion on the inner-side wall surface, an exhaustion unit for exhausting the inside of the processing chamber, and an electric-field supply unit for supplying an electric field to the component member in a state where the plasma will not be generated inside the processing chamber, wherein magnitude of the electric field supplied from the electric-field supply unit is changed rapidly while exhausting the inside of the processing chamber by the exhaustion unit.

    摘要翻译: 一种等离子体处理装置,其具有处理室和样品基底,并且通过使用在处理室内产生的等离子体处理样品,处理室位于真空容器内,样品基座位于处理室内部,样品被安装 在样品基底上,等离子体处理装置包括构成处理室的内侧壁面的构成部件,在内侧壁面上具有电介质部分,排出处理室内部的排气单元,以及 电场供给单元,用于在处理室内不产生等离子体的状态下向构件部件供给电场,其中,从电场供给单元供给的电场的大小迅速变化,同时排出 通过排气单元在处理室内部。

    PLASMA PROCESSING APPARATUS AND METHOD
    45.
    发明申请
    PLASMA PROCESSING APPARATUS AND METHOD 失效
    等离子体加工设备和方法

    公开(公告)号:US20080023145A1

    公开(公告)日:2008-01-31

    申请号:US11865836

    申请日:2007-10-02

    IPC分类号: H01L21/306

    摘要: A plasma processing apparatus includes a high-frequency power source for applying bias power to an electrode on which a substrate is disposed, an insulating layer formed on a surface of the electrode, a conductive material buried within the insulating layer, a feeder line connecting the high-frequency power source and the conductive material, a variable capacitor provided in the feeder line, and a direct current power source connected to the electrode at a position between the electrode and the high-frequency power source. One portion of the insulating layer where the conductive material is buried formed on an outer part of the electrode has a thickness which is greater than a thickness of another portion of the insulating layer where the conducting material is not buried and which extends from a central part of the electrode to the one portion of the insulating layer.

    摘要翻译: 等离子体处理装置包括用于向其上设置基板的电极施加偏置功率的高频电源,形成在电极的表面上的绝缘层,埋在绝缘层内的导电材料,连接 高频电源和导电材料,设置在馈电线路中的可变电容器,以及在电极和高频电源之间的位置处连接到电极的直流电源。 绝缘层的绝缘层的一部分形成在电极的外部部分上,其厚度大于绝缘层的另一部分的厚度,其中导电材料不被埋入,并且其厚度从中心部分延伸 的绝缘层的一部分。

    Method of holding substrate and substrate holding system
    47.
    发明授权
    Method of holding substrate and substrate holding system 失效
    保持基板和基板保持系统的方法

    公开(公告)号:US06899789B2

    公开(公告)日:2005-05-31

    申请号:US10437309

    申请日:2003-05-14

    摘要: A method and system of holding a substrate to decrease foreign substances on the back surface thereof. The substrate holding system includes a ring-shaped leakage-proof surface having a smooth surface on the specimen table corresponding to the periphery of the substrate, contact holding portions within the periphery of the substrate, and electrostatic attraction means for fixing the substrate by contacting the back surface thereof to the ring-shaped leakage-proof surface and the contact holding portions. The substrate contacts a cooling surface at the ring-shaped leakage-proof surface and the contact holding portion placed on a position inside the ring-shaped leakage-proof surface. The back surface of the substrate and the cooling surface do not contact each other in the large portion of the remaining area.

    摘要翻译: 保持基板以减少其背面上的异物的方法和系统。 基板保持系统包括:环状防漏表面,其具有与基板周边对应的试样台上的光滑表面,基板周围的接触保持部分,以及静电吸引装置,用于通过使基板 其背面到环状防漏面和接触保持部。 基板与环状防漏表面的接触保持部分和环形防漏表面内的位置接触。 基板的后表面和冷却表面在剩余区域的大部分中彼此不接触。

    Plasma processing apparatus and method
    48.
    发明授权
    Plasma processing apparatus and method 失效
    等离子体处理装置及方法

    公开(公告)号:US06759338B2

    公开(公告)日:2004-07-06

    申请号:US09795487

    申请日:2001-03-01

    IPC分类号: H01L21302

    摘要: A plasma processing apparatus and a plasma processing method for processing a wafer of a large diameter to produce a high speed semiconductor circuit at a high yield are provided. A thickness of an insulating film formed on a surface of an electrode opposing to a substrate to be processed is locally changed, an electrode is provided in the insulating film and a bypassed bias current is supplied to the electrode. An electrode is provided in an insulating film on a surface of the electrode opposing to a material adjacent to the substrate to be processed and a bypassed bias current is supplied to the electrode.

    摘要翻译: 提供了一种等离子体处理装置和等离子体处理方法,用于处理大直径的晶片以高产率生产高速半导体电路。 在与被处理基板相对的电极的表面上形成的绝缘膜的厚度局部变化,在绝缘膜中设置电极,向电极提供旁路偏置电流。 在电极的表面上设置有与被处理基板相邻的材料的绝缘膜上的电极,向电极供给旁路偏置电流。