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57 条记录 (耗时 0.037 秒)

    Magnetoresistive sensor, magnetoresistive head, and magnetic recording/reproducing apparatus
    41.
    发明授权
    Magnetoresistive sensor, magnetoresistive head, and magnetic recording/reproducing apparatus 失效
    磁阻传感器，磁阻磁头和磁记录/重放装置

    公开(公告)号：US06714374B1

    公开(公告)日：2004-03-30

    申请号：US09652821

    申请日：2000-08-31

    申请人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Stuart Solin ,  Tao Zhou

    发明人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Stuart Solin ,  Tao Zhou

    IPC分类号： G11B503

    CPC分类号： G11B5/3993 ,  G01R33/09 ,  G11B5/00 ,  G11B5/378 ,  G11B2005/0008 ,  G11B2005/0016 ,  H01L43/08

    摘要： A magnetoresistive sensor includes a magnetoresistive element and equipment which generates a magnetic field in the magnetoresistive element thereby inducing a biasing magnetic field in the element, where the magnetoresistive element comprises a high electron mobility semiconductor and electrodes which are connected to the semiconductor. If it is an insulator, the equipment, which generates the biasing magnetic field and supplies it to the magnetoresistive element, may contact directly to the magnetoresistive element. If it is a conductor, an insulating separation layer must be set between the equipment and the element. A magnetoresistive element is representatively Corbino disk type or a bar type magnetoresistive element. Another candidate of the magnetoresistive element is an element consisting of a high electron mobility semiconductor, a pair of electrodes which make a current path in the high electron mobility semiconductor, and another pair of electrodes to detect the induced voltage by the current.

    摘要翻译： 磁阻传感器包括磁阻元件和在磁阻元件中产生磁场的设备，从而在元件中产生偏置磁场，其中磁阻元件包括高电子迁移率半导体和连接到半导体的电极。 如果它是绝缘体，则产生偏置磁场并将其提供给磁阻元件的设备可以直接接触磁阻元件。 如果是导体，必须在设备和元件之间设置绝缘分离层。 磁阻元件是代表性的Corbino盘型或棒式磁阻元件。 磁阻元件的另一个候选物是由高电子迁移率半导体，在高电子迁移率半导体中形成电流路径的一对电极以及用电流检测感应电压的另一对电极组成的元件。

    WAVEGUIDE PATH COUPLING-TYPE PHOTODIODE
    44.
    发明申请
    WAVEGUIDE PATH COUPLING-TYPE PHOTODIODE 有权
    波导路耦合型光电转换器

    公开(公告)号：US20100119192A1

    公开(公告)日：2010-05-13

    申请号：US12598162

    申请日：2008-04-30

    申请人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

    发明人： Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi ,  Keishi Ohashi ,  Tai Tsuchizawa ,  Seiichi Itabashi

    IPC分类号： G02B6/12 ,  H01L31/0232

    CPC分类号： H01L31/022408 ,  B82Y20/00 ,  G02B6/1226 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/02325

    摘要： In a waveguide path coupling-type photodiode, a semiconductor light absorbing layer and an optical waveguide path core are adjacently arranged. An electrode formed of at least one layer is installed in a boundary part of the semiconductor light absorbing layer and the optical waveguide path core. The electrodes are arranged at an interval of (1/100)λ to λ [λ: wavelength of light transmitted through optical waveguide path core]. At least a part of the electrodes is embedded in the semiconductor light absorbing layer. Embedding depth from a surface of the semiconductor light absorbing layer is a value not more than λ/(2ns) [ns: refractive index of semiconductor light absorbing layer]. At least one layer of the electrode is constituted of a material which can surface plasmon-induced.

    摘要翻译： 在波导路耦合型光电二极管中，相邻地配置有半导体光吸收层和光波导路径芯。 由至少一层形成的电极安装在半导体光吸收层和光波导路径芯的边界部分。 电极以（1/100）λ至λ[λ：通过光波导路径芯透射的光的波长]的间隔布置。 至少一部分电极嵌入在半导体光吸收层中。 从半导体光吸收层的表面嵌入深度是不大于λ/（2ns）[ns：半导体光吸收层的折射率]的值。 至少一层电极由可以表面等离子体激发的材料构成。

    LIGHT RECEIVING CIRCUIT AND DIGITAL SYSTEM
    45.
    发明申请
    LIGHT RECEIVING CIRCUIT AND DIGITAL SYSTEM 有权
    光接收电路和数字系统

    公开(公告)号：US20090269084A1

    公开(公告)日：2009-10-29

    申请号：US12067625

    申请日：2006-09-26

    申请人： Masayuki Mizuno ,  Keishi Ohashi ,  Koichi Nose ,  Kenichi Nishi

    发明人： Masayuki Mizuno ,  Keishi Ohashi ,  Koichi Nose ,  Kenichi Nishi

    IPC分类号： H04B10/06

    CPC分类号： H04B10/69 ,  H03K17/785

    摘要： A light receiving circuit (114) includes a light inputting circuit (113) which converts one-system optical signal to be outputted from an optical transmission path (101) to an electrical signal and inverts a potential of the electrical signal each time the optical signal is detected, and a buffer circuit (110) which amplifies the electrical signal converted by the light inputting circuit and outputs the same. According to such configuration, since one-system optical signal may be inputted to the light receiving circuit, a system circuit configuration can be avoided to be complicated.

    摘要翻译： 光接收电路（114）包括光输入电路（113），其将从光传输路径（101）输出的单系统光信号转换为电信号，并且每当光信号 以及缓冲电路（110），放大由光输入电路转换的电信号并输出​​。 根据这样的结构，由于可以将单一系统光信号输入到光接收电路，所以可以避免系统电路结构复杂化。

    Thin film magnetic head with differing saturation magnetic flux density films and spacer between floating surface and coil patterns
    48.
    发明授权
    Thin film magnetic head with differing saturation magnetic flux density films and spacer between floating surface and coil patterns 失效
    具有不同饱和磁通密度膜和浮动表面与线圈图案之间的间隔物的薄膜磁头

    公开(公告)号：US5828533A

    公开(公告)日：1998-10-27

    申请号：US659565

    申请日：1996-06-10

    申请人： Keishi Ohashi ,  Haruo Urai ,  Shinsaku Saito

    发明人： Keishi Ohashi ,  Haruo Urai ,  Shinsaku Saito

    IPC分类号： G11B5/31 ,  G11B5/147 ,  G11B5/235

    CPC分类号： G11B5/313 ,  G11B5/3109 ,  G11B5/3116 ,  G11B5/312 ,  G11B5/3146 ,  G11B5/3163

    摘要： A thin film magnetic head includes lower and upper magnetic cores, an upper magnetic core distal end portion, a magnetic gap layer, coil layers, and insulating layers. The lower magnetic core has a distal end portion facing a magnetic head floating surface. The upper magnetic core distal end portion opposes the distal end portion of the lower magnetic core through a magnetic gap. The lower magnetic core and the upper magnetic head distal end portion are heated at a temperature T1 to have a saturation magnetic flux density BS1. The upper magnetic core magnetically connects the lower magnetic core and the upper magnetic core distal end portion to constitute a magnetic core and is heated at a temperature T2 to have a saturation magnetic flux density BS2. Note that T2

    摘要翻译： 薄膜磁头包括下磁芯和上磁心，上磁芯远端部分，磁隙层，线圈层和绝缘层。 下磁芯具有面向磁头浮动表面的远端部分。 上磁芯的前端部通过磁隙与下磁芯的前端部相对。 下磁芯和上磁头前端部分在温度T1下被加热以具有饱和磁通密度BS1。 上磁芯将下磁芯和上磁芯的前端部磁性地连接构成磁芯，并在温度T2下加热，使其具有饱和磁通密度BS2。 请注意，T2

    Photodiode
    50.
    发明授权
    Photodiode 有权
    光电二极管

    公开(公告)号：US08183656B2

    公开(公告)日：2012-05-22

    申请号：US12518729

    申请日：2007-12-13

    申请人： Daisuke Okamoto ,  Junichi Fujikata ,  Kenichi Nishi ,  Keishi Ohashi

    发明人： Daisuke Okamoto ,  Junichi Fujikata ,  Kenichi Nishi ,  Keishi Ohashi

    IPC分类号： H01L31/322

    CPC分类号： H01L31/1085 ,  H01L31/022408 ,  H01L31/02325

    摘要： A photodiode includes: an upper spacer layer including a semiconductor transparent to incident light; a metal periodic structure provided on the upper spacer layer and arranged to induce surface plasmon, the metal periodic structure including first and second electrodes including portions arranged alternately on the upper spacer layer; a light absorption layer formed under the upper spacer layer and including a semiconductor having a refractive index higher than that of the upper spacer layer; and a lower spacer layer formed under the light absorption layer and having a refractive index smaller than that of the light absorption layer. Each of the first and second electrodes forms a Schottky barrier junction with the upper spacer layer.

    摘要翻译： 光电二极管包括：包括对入射光透明的半导体的上间隔层; 金属周期结构，设置在上间隔层上并且布置成诱导表面等离子体激元，金属周期结构包括第一和第二电极，包括交替设置在上间隔层上的部分; 形成在所述上间隔层下方并且具有折射率高于所述上间隔层的折射率的半导体的光吸收层; 以及形成在光吸收层下面并且具有比光吸收层的折射率小的折射率的下间隔层。 第一和第二电极中的每一个与上间隔层形成肖特基势垒结。