公开(公告)号：US20090166184A1

公开(公告)日：2009-07-02

申请号：US12005182

申请日：2007-12-26

申请人： Yuchen Zhou ,  Lijie Guan ,  Kunliang Zhang

发明人： Yuchen Zhou ,  Lijie Guan ,  Kunliang Zhang

IPC分类号： C23C14/32 ,  G11B5/33 ,  G11B5/706

CPC分类号： G11B5/746 ,  B82Y10/00 ,  C23C14/225 ,  C23C16/45555 ,  G11B5/743 ,  G11B5/82 ,  G11B5/855

摘要： A track shield structure is disclosed that enables higher track density to be achieved in a patterned track medium without increasing adjacent track erasure and side reading. This is accomplished by placing a soft magnetic shielding structure in the space that is present between the tracks in the patterned medium. A process for manufacturing the added shielding structure is also described.

摘要翻译： 公开了一种轨道屏蔽结构，其能够在图案化的轨道介质中实现更高的轨道密度，而不增加相邻轨迹擦除和侧面读数。 这通过在存在于图案化介质中的轨道之间的空间中放置软磁屏蔽结构来实现。 还描述了用于制造附加的屏蔽结构的方法。

公开(公告)号：US08953285B2

公开(公告)日：2015-02-10

申请号：US12799924

申请日：2010-05-05

申请人： Yuchen Zhou ,  Kunliang Zhang ,  Zhigang Bai

发明人： Yuchen Zhou ,  Kunliang Zhang ,  Zhigang Bai

IPC分类号： G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  H01F10/30 ,  H01F10/32 ,  H01F41/30 ,  B82Y40/00

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/02 ,  H01L43/08

摘要： A MR sensor is disclosed that has a free layer (FL) with perpendicular magnetic anisotropy (PMA) which eliminates the need for an adjacent hard bias structure to stabilize free layer magnetization and minimizes shield-FL interactions. In a TMR embodiment, a seed layer, free layer, junction layer, reference layer, and pinning layer are sequentially formed on a bottom shield. After patterning, a conformal insulation layer is formed along the sensor sidewall. Thereafter, a top shield is formed on the insulation layer and includes side shields that are separated from the FL by a narrow read gap. The sensor is scalable to widths

摘要翻译： 公开了具有垂直磁各向异性（PMA）的自由层（FL）的MR传感器，其不需要相邻的硬偏置结构来稳定自由层磁化并使屏蔽-FL相互作用最小化。 在TMR实施例中，种子层，自由层，结层，参考层和钉扎层依次形成在底部屏蔽上。 在图案化之后，沿传感器侧壁形成保形绝缘层。 此后，在绝缘层上形成顶部屏蔽，并且包括通过狭窄的读取间隙与FL分离的侧面屏蔽。 当PMA大于FL自扫描场时，传感器可缩放到宽度<50 nm。 有效偏置场对传感器纵横比相当不敏感，这使得高条纹和窄宽度传感器成为高RA TMR配置的可行方法。 侧面屏蔽可以延伸到种子层平面以下。

公开(公告)号：US08203809B2

公开(公告)日：2012-06-19

申请号：US12924364

申请日：2010-09-24

申请人： Yuchen Zhou ,  Kenichi Takano ,  Kunliang Zhang

发明人： Yuchen Zhou ,  Kenichi Takano ,  Kunliang Zhang

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T428/1107 ,  Y10T428/115

摘要： A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that is based on HB easy axis growth perpendicular to an underlying seed layer which is formed above a substrate and along two sidewalls of the sensor. In one embodiment, a conformal soft magnetic layer that may be a top shield contacts the HB layer to provide direct exchange coupling that compensates HB surface charges. Optionally, a thin capping layer on the HB layer enables magneto-static shield-HB coupling. After HB initialization, HB regions along the sensor sidewalls have magnetizations that are perpendicular to the sidewalls as a result of surface charges near the seed layer. Sidewalls may be extended into the substrate (bottom shield) to give enhanced protection against side reading. The top surface of the seed layer may be amorphous or crystalline to promote HB easy axis perpendicular growth.

摘要翻译： 公开了用于纵向偏置MR传感器中的自由层的硬偏置（HB）结构，其基于垂直于衬底上并且沿着传感器的两个侧壁形成的下层种子层的HB易轴生长。 在一个实施例中，可以是顶部屏蔽的共形软磁性层与HB层接触以提供补偿HB表面电荷的直接交换耦合。 可选地，HB层上的薄覆盖层可实现磁静电屏蔽-HB耦合。 在HB初始化之后，沿着传感器侧壁的HB区域由于种子层附近的表面电荷而具有垂直于侧壁的磁化。 侧壁可以延伸到基板（底部屏蔽）中，以提供更强的防侧读保护。 种子层的顶表面可以是无定形的或结晶的以促进HB易轴垂直生长。

公开(公告)号：US20120087042A1

公开(公告)日：2012-04-12

申请号：US13199188

申请日：2011-08-22

申请人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

发明人： Yuchen Zhou ,  Kenichi Takano ,  Kowang Liu ,  Kunliang Zhang ,  Liejie Guan ,  Moris Dovek ,  Joe Smyth

IPC分类号： G11B5/147 ,  G11B5/60

CPC分类号： G11B5/3113 ,  G11B5/1278 ,  G11B5/147 ,  G11B5/3146 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044

摘要： A PMR writer is disclosed that minimizes pole erasure during non-writing and maximize write field during writing through an AFM-FM phase change material that is in an antiferromagnetic (AFM) state during non-writing and switches to a ferromagnetic (FM) state by heating during writing. The main pole layer including the write pole may be comprised of a laminated structure having a plurality of “n” ferromagnetic layers and “n−1” AFM-FM phase change material layers arranged in an alternating manner. The AFM-FM phase change material is preferably a FeRh, FeRhPt, FeRhPd, or FeRhIr and may also be used as a flux gate to prevent yoke flux from leaking into the write pole tip. Heating for the AFM to FM transition is provided by write coils and/or a coil located near the AFM-FM phase change material to enable faster transition times.

摘要翻译： 公开了一种PMR写入器，其在非写入期间最小化磁极擦除，并且在写入期间通过在非写入期间处于反铁磁（AFM）状态的AFM-FM相变材料中写入期间最大化写入场并且通过以下方式切换到铁磁（FM）状态： 书写过程中加热。 包括写极的主极层可以由具有多个“n”个铁磁层和“n-1”个AFM-FM相变材料层的交替排列的层压结构构成。 AFM-FM相变材料优选为FeRh，FeRhPt，FeRhPd或FeRhIr，并且还可以用作磁通门以防止磁轭焊剂泄漏到写极尖端。 AFM到FM转换的加热由位于AFM-FM相变材料附近的写入线圈和/或线圈提供，以实现更快的转换时间。

公开(公告)号：US20110273802A1

公开(公告)日：2011-11-10

申请号：US12799924

申请日：2010-05-05

申请人： Yuchen Zhou ,  Kunliang Zhang ,  Zhigang Bai

发明人： Yuchen Zhou ,  Kunliang Zhang ,  Zhigang Bai

IPC分类号： G11B5/33

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3912 ,  G11B2005/3996 ,  H01F10/30 ,  H01F10/3259 ,  H01F10/3286 ,  H01F10/3295 ,  H01F41/307 ,  H01L43/02 ,  H01L43/08

摘要： A MR sensor is disclosed that has a free layer (FL) with perpendicular magnetic anisotropy (PMA) which eliminates the need for an adjacent hard bias structure to stabilize free layer magnetization and minimizes shield-FL interactions. In a TMR embodiment, a seed layer, free layer, junction layer, reference layer, and pinning layer are sequentially formed on a bottom shield. After patterning, a conformal insulation layer is formed along the sensor sidewall. Thereafter, a top shield is formed on the insulation layer and includes side shields that are separated from the FL by a narrow read gap. The sensor is scalable to widths

摘要翻译： 公开了具有垂直磁各向异性（PMA）的自由层（FL）的MR传感器，其不需要相邻的硬偏置结构来稳定自由层磁化并使屏蔽-FL相互作用最小化。 在TMR实施例中，种子层，自由层，结层，参考层和钉扎层依次形成在底部屏蔽上。 在图案化之后，沿传感器侧壁形成保形绝缘层。 此后，在绝缘层上形成顶部屏蔽，并且包括通过狭窄的读取间隙与FL分离的侧面屏蔽。 当PMA大于FL自扫描场时，传感器可缩放到宽度<50 nm。 有效偏置场对传感器纵横比相当不敏感，这使得高条纹和窄宽度传感器成为高RA TMR配置的可行方法。 侧面屏蔽可以延伸到种子层平面以下。

公开(公告)号：US20110215800A1

公开(公告)日：2011-09-08

申请号：US12660909

申请日：2010-03-05

申请人： Yuchen Zhou ,  Tong Zhao ,  Kunliang Zhang

发明人： Yuchen Zhou ,  Tong Zhao ,  Kunliang Zhang

IPC分类号： G01R33/02 ,  B44C1/22

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/0011 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/3941

摘要： A CPP MR sensor interposes a tapered soft magnetic flux guide (FG) layer between a hard magnetic biasing layer (HB) and the free layer of the sensor stack. The flux guide channels the flux of the hard magnetic biasing layer to effectively bias the free layer, while eliminating instability problems associated with magnetostatic coupling between the hard bias layers and the upper and lower shields surrounding the sensor when the reader-shield-spacing (RSS) is small.

摘要翻译： CPP MR传感器将锥形软磁通导向器（FG）层介于硬磁偏置层（HB）和传感器堆叠的自由层之间。 磁通引导件引导硬磁偏置层的磁通，以有效地偏置自由层，同时消除与读取器屏蔽间隔（RSS）之间的硬偏置层与传感器周围的上下屏蔽之间的静磁耦合相关的不稳定性问题 ） 是小。

公开(公告)号：US07804668B2

公开(公告)日：2010-09-28

申请号：US11600380

申请日：2006-11-16

申请人： Yuchen Zhou ,  Kenichi Takano ,  Kunliang Zhang

发明人： Yuchen Zhou ,  Kenichi Takano ,  Kunliang Zhang

IPC分类号： G11B5/39

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T428/1107 ,  Y10T428/115

摘要： A hard bias (HB) structure for longitudinally biasing a free layer in a MR sensor is disclosed that is based on HB easy axis growth perpendicular to an underlying seed layer which is formed above a substrate and along two sidewalls of the sensor. In one embodiment, a conformal soft magnetic layer that may be a top shield contacts the HB layer to provide direct exchange coupling that compensates HB surface charges. Optionally, a thin capping layer on the HB layer enables magneto-static shield-HB coupling. After HB initialization, HB regions along the sensor sidewalls have magnetizations that are perpendicular to the sidewalls as a result of surface charges near the seed layer. Sidewalls may be extended into the substrate (bottom shield) to give enhanced protection against side reading. The top surface of the seed layer may be amorphous or crystalline to promote HB easy axis perpendicular growth.

摘要翻译： 公开了用于纵向偏置MR传感器中的自由层的硬偏置（HB）结构，其基于垂直于衬底上并且沿着传感器的两个侧壁形成的下层种子层的HB易轴生长。 在一个实施例中，可以是顶部屏蔽的共形软磁性层与HB层接触以提供补偿HB表面电荷的直接交换耦合。 可选地，HB层上的薄覆盖层可实现磁静电屏蔽-HB耦合。 在HB初始化之后，沿着传感器侧壁的HB区域由于种子层附近的表面电荷而具有垂直于侧壁的磁化。 侧壁可以延伸到基板（底部屏蔽）中，以提供更强的防侧读保护。 种子层的顶表面可以是无定形的或结晶的，以促进HB易轴垂直生长。

公开(公告)号：US09021685B2

公开(公告)日：2015-05-05

申请号：US12075605

申请日：2008-03-12

申请人： Tong Zhao ,  Hui-Chuan Wang ,  Kunliang Zhang ,  Min Li

发明人： Tong Zhao ,  Hui-Chuan Wang ,  Kunliang Zhang ,  Min Li

IPC分类号： G11B5/127 ,  G11B5/39 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/09 ,  G11B5/31 ,  G11C11/16 ,  H01L43/12

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3163 ,  G11B5/3906 ,  G11C11/16 ,  G11C11/161 ,  H01L43/12 ,  Y10T29/49034

摘要： An annealing process for a TMR or GMR sensor having an amorphous free layer is disclosed and employs at least two annealing steps. A first anneal at a temperature T1 of 200° C. to 270° C. and for a t1 of 0.5 to 15 hours is employed to develop the pinning in the AFM and pinned layers. A second anneal at a temperature T2 of 260° C. to 400° C. where T2>T1 and t1>t2 is used to crystallize the amorphous free layer and complete the pinning. An applied magnetic field of about 8000 Oe is used during both anneal steps. The mechanism for forming a sensor with high MR and robust pinning may involve structural change in the tunnel barrier or at an interface between two of the layers in the spin valve stack. A MgO tunnel barrier and a CoFe/CoB free layer are preferred.

公开(公告)号：US08493694B2

公开(公告)日：2013-07-23

申请号：US12927697

申请日：2010-11-22

申请人： Min Zheng ,  Kunliang Zhang ,  Min Li

发明人： Min Zheng ,  Kunliang Zhang ,  Min Li

IPC分类号： G11B5/39

CPC分类号： G11B5/3932 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  H01F10/123 ,  H01F10/30 ,  H01F41/302 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  Y10T428/1121

摘要： The free layer of a CPP-TMR sensor is biased by laterally disposed hard bias (HB) layers that include a seedlayer structure, a magnetic layer structure of high coercivity material and a capping layer structure. The magnetic layer structure is a layer of FePt-containing material, such as FePtCu, while the seedlayers and capping layers include layers of Cr, CrTi, Fe, FeCo or FeCoMo. These combinations enable the promotion of the L10 phase of the FePt-containing material which provides a high coercivity magnetic layer structure at much lower annealing temperatures than in the prior art.

摘要翻译： CPP-TMR传感器的自由层由横向设置的硬偏置（HB）层偏置，其包括种层结构，高矫顽力材料的磁性层结构和覆盖层结构。 磁性层结构是含FePt的材料层，例如FePtCu，而层和覆盖层包括Cr，CrTi，Fe，FeCo或FeCoMo层。 这些组合使得能够促进含FePt的材料的L10相，其提供比现有技术低得多的退火温度下的高矫顽磁性层结构。

公开(公告)号：US08379351B2

公开(公告)日：2013-02-19

申请号：US12073895

申请日：2008-03-11

申请人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Kunliang Zhang ,  Min Li ,  Michiko Hara ,  Yoshinari Kurosaki

发明人： Yoshihiko Fuji ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Kunliang Zhang ,  Min Li ,  Michiko Hara ,  Yoshinari Kurosaki

IPC分类号： G11B5/39

CPC分类号： G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/08 ,  Y10S977/943

摘要： An example magneto-resistance effect element includes a fixed magnetization layer of which a magnetization is substantially fixed in one direction; a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer; and a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof and which is located between the fixed magnetization layer and the free magnetization layer. A thin film layer is located on a side opposite to the spacer layer relative to the free magnetization layer and a functional layer containing at least one element selected from the group consisting of Si, Mg, B, Al is formed in or on at least one of the fixed magnetization layer, the free magnetization layer and the thin film layer.

摘要翻译： 一个示例性磁阻效应元件包括一个固定的磁化层，其磁化强度基本上固定在一个方向上; 自由磁化层，其磁化根据外部磁场而旋转并与固定磁化层相对形成; 以及间隔层，其包括具有绝缘层的电流限制层和导体，以使电流在其厚度方向上穿过绝缘层，并且位于固定磁化层和自由磁化层之间。 薄膜层相对于自由磁化层位于与间隔层相反的一侧，并且包含至少一种选自Si，Mg，B，Al的元素的功能层形成在至少一个 的固定磁化层，自由磁化层和薄膜层。