公开(公告)号：US20200066954A1

公开(公告)日：2020-02-27

申请号：US16541132

申请日：2019-08-14

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO

IPC: H01L33/62 ,  H01L33/42 ,  H01L33/52 ,  H01L33/22

Abstract: A light emitting diode includes a base layer, an electric contact layer, a semiconductor stack, and an insulation layer. The base layer has a maximum of a first width. The electric contact layer has a maximum of a second width and is disposed on the base layer. The semiconductor stack disposed on the electric contact layer has a maximum of a third width, and includes a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer stacked in sequence, wherein a width of the first type semiconductor layer is smaller than the maximum of the third width. The insulation layer covers the sidewalls of the base layer, the electric contact layer, and the semiconductor stack. The maximum of the second width is greater than the maximum of the third width and the maximum of the second width is less than the maximum of the first width.

公开(公告)号：US20180122853A1

公开(公告)日：2018-05-03

申请号：US15792743

申请日：2017-10-24

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO

IPC: H01L27/15 ,  H01L23/62 ,  H01L33/06 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L27/15 ,  H01L23/62 ,  H01L33/06 ,  H01L33/60 ,  H01L33/62

Abstract: A light-emitting diode (LED) chip includes a substrate, a light-emitting component, an electrical static discharge (ESD) protection component, and a conductive layer. The light-emitting component is disposed on the substrate and includes a first semiconductor layer, a first quantum well layer, and a second semiconductor layer, in which the first quantum well layer is disposed between the first and second semiconductor layers. The ESD protection component is disposed on the substrate and includes a third semiconductor layer, a second quantum well layer, and a fourth semiconductor layer, in which the second quantum well layer is disposed between the third and the fourth semiconductor layers. The first and the fourth semiconductor layers are electrically connected with each other through the conductive layer, and the second and the third semiconductor layers are electrically isolated from each other before packaging the LED chip.

公开(公告)号：US20180019575A1

公开(公告)日：2018-01-18

申请号：US15638356

申请日：2017-06-29

Applicant: Lextar Electronics Corporation

Inventor： Te-Chung WANG ,  Shiou-Yi KUO ,  Jun-Rong CHEN

IPC: H01S5/32 ,  H01L33/60 ,  H01S5/042 ,  H01S5/18

CPC classification number: H01S5/3211 ,  H01L33/60 ,  H01S5/0425 ,  H01S5/18 ,  H01S5/20

Abstract: A side-view light emitting laser element includes a support substrate, a first electrode layer, a second electrode layer, and a light emitting multilayer unit sandwiched between the first electrode layer and the second electrode layer. The first electrode layer is disposed on the support substrate. The second electrode layer is disposed on the first electrode layer. The light emitting multilayer unit includes a first semiconductor layer, a second semiconductor layer and an activating layer sandwiched between the first semiconductor layer and the second semiconductor layer. A first refractive index of the first electrode layer and a second refractive index of the second electrode layer are between 1 and 0, respectively.

公开(公告)号：US20170170361A1

公开(公告)日：2017-06-15

申请号：US15434075

申请日：2017-02-16

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Shih-Huan LAI

IPC: H01L33/10 ,  H01L33/14 ,  H01L33/42

Abstract: A light emitting diode structure includes a first type semiconductor layer, a second type semiconductor layer, an active layer disposed therebetween, and a reflective stacked layer. The reflective stacked layer includes a first reflective layer and a second reflective layer. The first reflective layer is disposed at a side of the second type semiconductor layer opposing the active layer. The second reflective layer is disposed at a side of the first reflective layer opposing the second type semiconductor layer, and extends along a side surface of the first reflective layer to a surface of the second type semiconductor layer. A vertical projection area of the second reflective layer on the second-type semiconductor layer is greater than that of the first reflective layer thereon. The second reflective layer has a better resistance to migration than the first reflective layer.

公开(公告)号：US20160365496A1

公开(公告)日：2016-12-15

申请号：US15176102

申请日：2016-06-07

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Shiou-Yi KUO ,  Shih-Huan LAI

IPC: H01L33/60 ,  H01L33/62 ,  H01L33/46 ,  H01L33/36

CPC classification number: H01L33/405 ,  H01L33/38 ,  H01L33/46 ,  H01L33/62

Abstract: A light-emitting device is provided, including: a substrate; a reflective layer disposed on the substrate; a patterned contact layer disposed on the reflective layer; a light-emitting unit disposed on the patterned contact layer; a first electrode disposed on a top surface of the light-emitting unit; and a second electrode disposed on a bottom surface of the light-emitting unit; wherein a projection of the first electrode on the substrate and a projection of the patterned contact layer on the substrate are complementary to each other.

Abstract translation: 提供一种发光装置，包括：基板; 设置在所述基板上的反射层; 设置在所述反射层上的图案化接触层; 设置在图案化接触层上的发光单元; 设置在所述发光单元的顶表面上的第一电极; 以及设置在所述发光单元的底面上的第二电极; 其中所述第一电极在所述衬底上的突起和所述图案化接触层在所述衬底上的突起彼此互补。

公开(公告)号：US20140367635A1

公开(公告)日：2014-12-18

申请号：US14089948

申请日：2013-11-26

Applicant: LEXTAR ELECTRONICS CORPORATION

Inventor： Shiou-Yi KUO

IPC: H01L33/24 ,  H01L33/06

CPC classification number: H01L33/42 ,  H01L33/38

Abstract: An LED structure includes a substrate, an emitting multilayer structure, a plurality of microstructures and a transparent conductive layer. The emitting multilayer structure is formed on the substrate. The microstructures are spaced apart from each other on the light emitting multilayer structure, and an upper surface of each microstructure has a concave-convex surface. The transparent conductive layer is conformably covered over the light emitting multilayer structure and the microstructures. The transparent conductive layer has similar concave-convex surfaces due to the concave-convex surface of each microstructure. The light emitted from the emitting multilayer structure is changed due to the concave-convex surface of the transparent conductive layer, so that the phenomenon of total internal reflection can be reduced so as to increase the light transmittance.

Abstract translation: LED结构包括基板，发光多层结构，多个微结构和透明导电层。 发光多层结构形成在基板上。 微结构在发光多层结构上彼此间隔开，并且每个微结构的上表面具有凹凸表面。 透明导电层被顺应地覆盖在发光多层结构和微结构上。 由于每个微结构的凹凸表面，透明导电层具有类似的凹凸表面。 从发光多层结构发射的光由于透明导电层的凹凸表面而改变，从而可以减小全内反射现象，从而增加透光率。