公开(公告)号：US20240379908A1

公开(公告)日：2024-11-14

申请号：US18637388

申请日：2024-04-16

Applicant: Lextar Electronics Corporation

Inventor： Guo-Yi SHIU ,  Shiou-Yi KUO

IPC: H01L33/38 ,  H01L33/62

Abstract: A semiconductor structure includes a micro semiconductor device and a support fragment. The micro semiconductor device has a first surface and a second surface opposite the first surface. The micro semiconductor device includes a first electrode and a second electrode on the first surface. The first electrode and the second electrode are separated from each other. The support fragment is left on the micro semiconductor device and positioned corresponding to the region between the main portion of the first electrode and the second electrode in the vertical direction. The support fragment has an annular breaking surface in a plan view of the support fragment.

公开(公告)号：US20230068872A1

公开(公告)日：2023-03-02

申请号：US17818720

申请日：2022-08-10

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Te-Chung WANG

IPC: H01L33/46 ,  H01L33/20

Abstract: A light-emitting element includes a first reflection layer, a second reflection layer, a multi-layer light-emitting structure, and a light-transmitting semiconductor layer. The first reflection layer has a first reflectance, and the second reflection layer has a second reflectance greater than the first reflectance. The multi-layer light-emitting structure is between the first reflection layer and the second reflection layer. The light-transmitting semiconductor layer is located on the first reflection layer and has an upper light-extracting surface, and the first reflection layer is closer to the upper light-extracting surface than the second reflection layer. An interval between the upper light-extracting surface and the first reflection layer is equal to or smaller than 5 μm.

公开(公告)号：US20220158037A1

公开(公告)日：2022-05-19

申请号：US17106204

申请日：2020-11-30

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/44 ,  H01L23/00

Abstract: A light-emitting diode structure for improving bonding yield is provided, which includes a light-emitting diode, a plurality of contact electrodes, an insulating layer structure, and a plurality of bonding electrodes. One surface of the light-emitting diode includes a mesa structure. The contact electrodes are on the mesa structure. The bonding electrodes are on the insulating layer structure and respectively cover at least one contact electrode. A surface of one of the bonding electrodes facing away from the light-emitting diode has a first platform and a second platform. The second platform is on the first platform. A surface area of a vertical projection of the second platform on the light-emitting diode is smaller than that of the first platform on the light-emitting diode, and said vertical projection of the second platform is within that of the first platform.

公开(公告)号：US20220020900A1

公开(公告)日：2022-01-20

申请号：US16931463

申请日：2020-07-17

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Jian-Chin LIANG ,  Yu-Chun LEE ,  Fu-Hsin CHEN ,  Chih-Hao LIN

IPC: H01L33/50 ,  H01L33/22 ,  H01L33/48 ,  H01L33/62 ,  H01L27/15

Abstract: A light emitting device includes an LED die and a wavelength conversion layer. The LED die has a light emitting top surface and light emitting side surfaces. The wavelength conversion layer contains quantum dots and a photosensitive material, and is located on the light emitting top surface. A light emitting module including multiple light emitting devices is also disclosed.

公开(公告)号：US20210399168A1

公开(公告)日：2021-12-23

申请号：US16907143

申请日：2020-06-19

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Jian-Chin LIANG ,  Chien-Nan YEH

IPC: H01L33/08 ,  H01L33/62 ,  H01L33/22 ,  H01L33/42

Abstract: A light emitting device includes a first light emitting cell and a second light emitting cell. Each light emitting cell includes a first semiconductor layer, a second semiconductor layer, and an active layer between the first and second semiconductor layers. The second semiconductor layer of the second light emitting cell has an exposed surface. A transparent bonding layer is located between the first and second light emitting cells. A hole is formed on the first and second light emitting cells and the transparent bonding layer. A first route metal is located on a sidewall of the hole and electrically coupled to the second semiconductor layer of the first light emitting cell and the first semiconductor layer of the second light emitting cell. The active layer of the second light emitting cell has an area greater than the active layer of the first light emitting cell.

公开(公告)号：US20210036185A1

公开(公告)日：2021-02-04

申请号：US16524165

申请日：2019-07-29

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO

IPC: H01L33/10 ,  H01L33/06 ,  H01L33/22 ,  H01L33/30 ,  H01L33/44

Abstract: A light emitting device includes a stacked structure and a first insulating layer covering at least side surfaces of the stacked structure including a p-type and n-type semiconductor layers, a light emitting layer sandwiched between the p-type and n-type semiconductor layers, an n-type electrode on the n-type semiconductor layer, an n-type contact layer sandwiched between the n-type semiconductor layer and the n-type electrode, a p-type electrode on the p-type semiconductor layer, an n-type contact pad on the n-type electrode, a p-type contact pad on the p-type electrode, and a semiconductor reflector between the light emitting layer and the n-type contact layer including multiple periods, each period including at least a first layer and at least a second layer having a refractive index different from a refractive index of the first layer. The light emitting device could be applied to wide color gamut (WCG) backlight modules or ultra-thin backlight modules.

公开(公告)号：US20190131342A1

公开(公告)日：2019-05-02

申请号：US16171334

申请日：2018-10-25

Applicant: Lextar Electronics Corporation

Inventor： Yi-Jyun CHEN ,  Li-Cheng YANG ,  Yu-Chun LEE ,  Shiou-Yi KUO ,  Chih-Hao LIN

IPC: H01L27/15 ,  H01L33/50 ,  H01L33/38 ,  H01L33/08 ,  H01L33/52 ,  H01L25/075

Abstract: A pixel structure includes a light emitting diode chip and a light blocking structure. The light emitting diode chip includes a P-type semiconductor layer, an active layer, an N-type semiconductor layer, a first electrode, and K second electrodes. The active layer is located on the P-type semiconductor layer. The N-type semiconductor layer is located on the active layer. The N-type semiconductor layer has a first top surface that is distant from the active layer. The first electrode is electrically connected to the P-type semiconductor layer. The light blocking structure is located in the light emitting diode chip and defines K sub-pixel regions. The active layer and the N-type semiconductor layer are divided into K sub-portions respectively corresponding to the K sub-pixel regions by the light blocking structure. The K sub-pixel regions share the P-type semiconductor layer.

公开(公告)号：US20250143042A1

公开(公告)日：2025-05-01

申请号：US18826668

申请日：2024-09-06

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Bo-Yu CHEN

IPC: H01L33/62 ,  H01L25/075 ,  H01L25/16 ,  H01L27/12

Abstract: A micro light-emitting diode package structure is provided. The micro light-emitting diode package structure includes a plurality of micro light-emitting diode chips, a light-transmitting layer, a first insulating layer, a driving element, and a redistribution layer. The micro light-emitting diode chips are disposed side by side, wherein each micro light-emitting diode chip includes an electrode surface and a light-emitting surface opposite to each other. The light-transmitting layer covers the light-emitting surfaces of the micro light-emitting diode chips. The first insulating layer is disposed below the micro light-emitting diode chips. The driving element is disposed in the first insulating layer, wherein the driving element includes a plurality of electrodes, and the electrodes are on the side of the driving element away from the micro light-emitting diode chips. The redistribution layer electrically connects the electrode surfaces of the micro light-emitting diode chips and the electrodes of the driving element.

公开(公告)号：US20240355986A1

公开(公告)日：2024-10-24

申请号：US18633418

申请日：2024-04-11

Applicant: Lextar Electronics Corporation

Inventor： Shiou-Yi KUO ,  Guo-Yi SHIU ,  Chin-Hung LO ,  Chih-Hao LIN ,  Cheng-Hsien LI ,  Wei-Yuan MA

IPC: H01L33/62 ,  H01L23/00 ,  H01L25/075

CPC classification number: H01L33/62 ,  H01L24/19 ,  H01L24/20 ,  H01L25/0753 ,  H01L2224/19 ,  H01L2224/211 ,  H01L2933/0066

Abstract: A micro light-emitting diode package structure and a forming method thereof are provided. The micro light-emitting diode package structure includes micro light-emitting diode dies, a light-transmitting layer, a first insulating layer, redistribution layers, and conductive elements. The micro light-emitting diode dies are disposed side by side and each includes an electrode surface, a light-emitting surface, and side surfaces. The electrode surface and the light-emitting surface are opposite to each other, and the side surfaces are between them. The light-transmitting layer covers the light-emitting surface and the side surfaces. The first insulating layer is under the micro light-emitting diode dies and in direct contact with the electrode surface. The redistribution layers are disposed under the first insulating layer and pass through the first insulating layer to electrically connect the electrode surface. The conductive elements are disposed under the redistribution layers and electrically connected to the redistribution layers.

公开(公告)号：US20230155062A1

公开(公告)日：2023-05-18

申请号：US17931583

申请日：2022-09-13

Applicant: Lextar Electronics Corporation

Inventor： Kang-Hung LIU ,  Chih-Hao LIN ,  Shiou-Yi KUO

IPC: H01L33/38 ,  H01L33/44 ,  H01L33/00 ,  H01L23/00 ,  H01L25/16 ,  H01L25/13 ,  H01L33/54

CPC classification number: H01L33/38 ,  H01L33/44 ,  H01L33/0093 ,  H01L24/29 ,  H01L24/32 ,  H01L25/167 ,  H01L25/13 ,  H01L33/54 ,  H01L2933/0025 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2933/005 ,  H01L2933/0016

Abstract: A package structure is provided. The package structure has a light-emitting region and a non-light-emitting region that is adjacent to the light-emitting region, and includes a substrate, a first light-emitting layer, a second light-emitting layer and a third light-emitting layer. The first light-emitting layer, the second light-emitting layer and the third light-emitting layer are sequentially stacked on the substrate. Each of the first light-emitting layer, the second light-emitting layer and the third light-emitting layer includes a transparent adhesive layer disposed in the light-emitting region, a light-emitting diode (LED) chip disposed on the transparent adhesive layer, a redistribution layer formed on the LED chip and extending from the light-emitting region to the non-light-emitting region, and a planarization layer disposed on the LED chip and the redistribution layer.