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公开(公告)号：US20130193448A1
公开(公告)日：2013-08-01
申请号：US13752370
申请日：2013-01-28
Applicant: Lextar Electronics Corporation
Inventor： Hsiu-Mei CHOU , Jun-Rong CHEN , Jhao-Cheng YE
CPC classification number: H01L29/04 , C30B15/00 , C30B25/18 , C30B29/06 , H01L29/12 , H01L29/1608 , H01L33/007 , H01L33/02
Abstract: A patterned substrate is provided, including: a substrate having a (0001) crystal plane and a plurality of alternatively arranged recess structures therein, thereby forming a plurality of alternatively arranged top surfaces; and a dielectric barrier layer covering the bottom surface and/or the sidewalls of the recess structures. Each of the alternatively arranged recess structures includes a bottom surface and a plurality of sidewalls surrounding the bottom surface.
Abstract translation: 提供了一种图案化衬底，包括：具有（0001）晶面的衬底和其中的多个交替布置的凹陷结构，由此形成多个可替代布置的顶表面; 以及覆盖凹部结构的底表面和/或侧壁的介电阻挡层。 每个备选布置的凹陷结构包括底表面和围绕底表面的多个侧壁。
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2.发明申请公开(公告)号：US20190081210A1
公开(公告)日：2019-03-14
申请号：US16038202
申请日：2018-07-18
Applicant: Lextar Electronics Corporation
Inventor： Shiou-Yi KUO , Jun-Rong CHEN , Guo-Yi SHIU
CPC classification number: H01L33/325 , B32B7/12 , H01L33/007 , H01L33/0075 , H01L33/0079 , H01L33/30 , H01L33/32 , H01L33/44 , H01L33/62 , H01L2933/0025
Abstract: A micro light emitting diode includes a die-bonding substrate, an adhesive layer, an undoped III-V group semiconductor layer, an N-type III-V group semiconductor layer, a light emitting layer, and a P-type III-V group semiconductor layer. The adhesive layer is disposed on the die-bonding substrate. The undoped III-V group semiconductor layer is disposed on the adhesive layer, and the adhesive layer is between the die-bonding substrate and the undoped III-V group semiconductor layer. The N-type III-V group semiconductor layer is disposed on the undoped III-V group semiconductor layer. The light emitting layer is disposed on the N-type III-V group semiconductor layer. The P-type III-V group semiconductor layer is disposed on the N-type III-V group semiconductor layer, and the light emitting layer is between the N-type III-V group semiconductor layer and the P-type III-V group semiconductor layer.
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公开(公告)号：US20150162496A1
公开(公告)日：2015-06-11
申请号：US14281750
申请日：2014-05-19
Applicant: LEXTAR ELECTRONICS CORPORATION
Inventor： Jun-Rong CHEN
CPC classification number: H01L33/22 , H01L33/0079
Abstract: The invention provides a method for fabricating a light-emitting diode device. The method includes providing a carrier having a first surface and a second surface. The first surface has insulating micro patterns. A buffer layer, a first-type semiconductor layer, a light-emitting layer and a second-type semiconductor layer are grown on the first surface to form a light-emitting lamination layer. A substrate is provided for the second-type semiconductor layer to bond on. The carrier is lifted off from the light-emitting lamination layer by a laser lift-off process, and surfaces of the insulating micro patterns and a surface of the barrier layer between the insulating micro patterns are exposed. The insulating micro patterns and the barrier layer are removed. Recess structures are formed on the first-type semiconductor layer. A surface-roughing process is then performed on the recess structures.
Abstract translation: 本发明提供一种制造发光二极管器件的方法。 该方法包括提供具有第一表面和第二表面的载体。 第一表面具有绝缘微图案。 在第一表面上生长缓冲层，第一类型半导体层，发光层和第二类型半导体层，以形成发光层压层。 提供用于第二类型半导体层接合的衬底。 通过激光剥离工艺将载体从发光层叠层剥离，绝缘微图案的表面和绝缘微图案之间的阻挡层的表面露出。 去除绝缘微图案和阻挡层。 在第一型半导体层上形成凹陷结构。 然后对凹部结构进行表面粗糙化处理。
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4.发明申请公开(公告)号：US20170148951A1
公开(公告)日：2017-05-25
申请号：US15428128
申请日：2017-02-08
Applicant: Lextar Electronics Corporation
Inventor： Jun-Rong CHEN , Hsiu-Mei CHOU , Jhao-Cheng YE
CPC classification number: H01L21/02513 , C30B23/04 , C30B25/04 , C30B25/20 , C30B29/406 , C30B29/66 , C30B29/68 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/0075 , H01L33/02 , H01L33/12 , H01L33/20 , H01L33/32
Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the first epitaxial layer.
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Patent Agency Ranking
5.发明申请公开(公告)号：US20170154769A1
公开(公告)日：2017-06-01
申请号：US15428416
申请日：2017-02-09
Applicant: Lextar Electronics Corporation
Inventor： Jun-Rong CHEN , Hsiu-Mei CHOU , Jhao-Cheng YE
IPC: H01L21/02 , H01L33/20 , H01L33/32 , C30B29/66 , C30B25/20 , C30B29/40 , C30B29/68 , H01L33/00 , H01L33/12
CPC classification number: H01L21/02513 , C30B23/04 , C30B25/04 , C30B25/20 , C30B29/406 , C30B29/66 , C30B29/68 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/0075 , H01L33/02 , H01L33/12 , H01L33/20 , H01L33/32
Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the first epitaxial layer.
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6.发明申请公开(公告)号：US20150228853A1
公开(公告)日：2015-08-13
申请号：US14694602
申请日：2015-04-23
Applicant: Lextar Electronics Corporation
Inventor： Jun-Rong CHEN , Hsiu-Mei CHOU , Jhao-Cheng YE
CPC classification number: H01L21/02513 , C30B23/04 , C30B25/04 , C30B25/20 , C30B29/406 , C30B29/66 , C30B29/68 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/0075 , H01L33/02 , H01L33/12 , H01L33/20 , H01L33/32
Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of slanting air voids tapering away from the substrate and an opening over each of the slanting air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the slanting air voids in a shape of trapezoid with the surface and the first epitaxial layer.
Abstract translation: 外延结构包括衬底，第一外延层和第二外延层。 衬底具有表面，并且第一外延层设置在衬底上并且限定多个倾斜的空气空隙，其从衬底逐渐变细并且在每个倾斜空气空隙上开口。 第二外延层设置在第一外延层上，并且与表面和第一外延层共同地限定呈梯形形状的倾斜空气空隙。
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公开(公告)号：US20180019575A1
公开(公告)日：2018-01-18
申请号：US15638356
申请日：2017-06-29
Applicant: Lextar Electronics Corporation
Inventor： Te-Chung WANG , Shiou-Yi KUO , Jun-Rong CHEN
CPC classification number: H01S5/3211 , H01L33/60 , H01S5/0425 , H01S5/18 , H01S5/20
Abstract: A side-view light emitting laser element includes a support substrate, a first electrode layer, a second electrode layer, and a light emitting multilayer unit sandwiched between the first electrode layer and the second electrode layer. The first electrode layer is disposed on the support substrate. The second electrode layer is disposed on the first electrode layer. The light emitting multilayer unit includes a first semiconductor layer, a second semiconductor layer and an activating layer sandwiched between the first semiconductor layer and the second semiconductor layer. A first refractive index of the first electrode layer and a second refractive index of the second electrode layer are between 1 and 0, respectively.
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8.发明申请公开(公告)号：US20150228854A1
公开(公告)日：2015-08-13
申请号：US14694617
申请日：2015-04-23
Applicant: Lextar Electronics Corporation
Inventor： Jun-Rong CHEN , Hsiu-Mei CHOU , Jhao-Cheng YE
CPC classification number: H01L21/02513 , C30B23/04 , C30B25/04 , C30B25/20 , C30B29/406 , C30B29/66 , C30B29/68 , H01L21/02381 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/0075 , H01L33/02 , H01L33/12 , H01L33/20 , H01L33/32
Abstract: An epitaxial structure includes a substrate, a first epitaxial layer and a second epitaxial layer. The substrate has a surface, and the first epitaxial layer is disposed over the substrate and defines a plurality of stepped air voids and an opening over each of the stepped air voids. The second epitaxial layer is disposed on the first epitaxial layer and collectively defines the stepped air voids with the surface and the first epitaxial layer.
Abstract translation: 外延结构包括衬底，第一外延层和第二外延层。 衬底具有表面，并且第一外延层设置在衬底上并且限定多个阶梯式空气空隙和在每个阶梯式气隙上的开口。 第二外延层设置在第一外延层上并且共同地限定具有表面和第一外延层的阶梯空气空隙。
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公开(公告)号：US20130292722A1
公开(公告)日：2013-11-07
申请号：US13658813
申请日：2012-10-23
Applicant: LEXTAR ELECTRONICS CORPORATION
Inventor： Jun-Rong CHEN , Jhao-Cheng YE
IPC: H01L33/58
CPC classification number: H01L33/22 , H01L33/10 , H01L2933/0091
Abstract: The present invention provides a light emitting diode (LED) element which comprises a substrate, a buffer layer, a plurality of nano-spheres and a light emitting structure. The substrate comprises a plurality of grooves arranged at intervals on a surface of the substrate. The buffer layer is disposed on the surface of the substrate where the grooves being formed, wherein the grooves are disposed between the substrate and the buffer layer. The nano-spheres are received in the grooves, so each groove is provided with at least a nano-sphere. The light emitting structure is disposed on the buffer layer.
Abstract translation: 本发明提供一种发光二极管（LED）元件，其包括衬底，缓冲层，多个纳米球体和发光结构。 衬底包括在衬底的表面上间隔布置的多个沟槽。 缓冲层设置在形成有凹槽的基板的表面上，其中凹槽设置在基板和缓冲层之间。 纳米球被容纳在槽中，因此每个凹槽设置有至少一个纳米球体。 发光结构设置在缓冲层上。
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