公开(公告)号：US07060980B2

公开(公告)日：2006-06-13

申请号：US11143203

申请日：2005-06-02

申请人： Lena Nicolaides ,  Alex Salnik

发明人： Lena Nicolaides ,  Alex Salnik

IPC分类号： G01N21/88

CPC分类号： G01N21/1717 ,  G01N21/171 ,  G01N21/9501

摘要： A method and apparatus for evaluating a semiconductor wafer. A combination of a photothermal modulated reflectance method and system with a photothermal IR radiometry system and method is utilized to provide information which can be used to determine properties of semiconductor wafers being evaluated. The system and method can provide for utilizing a common probe source and a common intensity modulated energy source. The system and method further provide an infrared detector for monitoring changes in infrared radiation emitted from a sample, and photodetector for monitoring changes in beam reflected from the sample.

公开(公告)号：US08415961B1

公开(公告)日：2013-04-09

申请号：US12961932

申请日：2010-12-07

申请人： Guoheng Zhao ,  Alex Salnik ,  Lena Nicolaides ,  Ady Levy

发明人： Guoheng Zhao ,  Alex Salnik ,  Lena Nicolaides ,  Ady Levy

IPC分类号： G01R27/08 ,  G01R31/308

CPC分类号： G01R31/2656 ,  G01R31/2648

摘要： A method may include illuminating a first area of a semiconductor utilizing a light source. The method may also include measuring at least one characteristic of electrical energy transmission utilizing a probe for placing at least one of at or near the illuminated first area of the semiconductor. The method may further include varying the measured at least one characteristic of the electrical energy transmission generated by the light from the light source incident upon the semiconductor while maintaining an intensity of the light source. Further, the method may include determining a sheet resistance for the junction of the semiconductor utilizing the varied at least one characteristic of the electrical energy transmission.

摘要翻译： 一种方法可以包括利用光源照射半导体的第一区域。 该方法还可以包括利用探针来测量电能传输的至少一个特征，所述探针用于放置半导体照明的第一区域中或其附近的至少一个。 该方法还可以包括改变由入射到半导体上的来自光源的光产生的电能传输的测量的至少一个特性，同时保持光源的强度。 此外，该方法可以包括利用电能传输的变化的至少一个特性来确定半导体的结的薄层电阻。

公开(公告)号：US08120776B1

公开(公告)日：2012-02-21

申请号：US12545015

申请日：2009-08-20

申请人： Alex Salnik ,  Lena Nicolaides

发明人： Alex Salnik ,  Lena Nicolaides

IPC分类号： G01N21/55

CPC分类号： G01N21/1717 ,  G01N2021/1725

摘要： Carrier activation and end-of-range defect density of ultra-shallow junctions in integrated circuits are determined using modulated optical reflectance signals, DC reflectances of pump or probe laser beams, and in-phase and quadrature signal processing. A method for determining characteristics of an ultra-shallow junction includes periodically exciting a region of the substrate using a pump laser beam, and reflecting a probe laser beam from the excited region. A modulated optical reflectance signal is measured along with DC reflectance of the probe laser beam. The modulated optical reflectance signal and DC reflectance are compared with reference signals generated from calibration substrates to determine carrier activation and end-of-range defect density in the junction.

摘要翻译： 使用调制的光反射信号，泵浦或探针激光束的直流反射以及同相和正交信号处理来确定集成电路中超浅结的载流子激活和终端缺陷密度。 用于确定超浅结的特性的方法包括使用泵浦激光束周期性地激励基板的区域，并且反射来自激发区域的探测激光束。 测量调制的光反射信号与探测激光束的直流反射率一起测量。 将调制的光反射信号和DC反射率与从校准基板产生的参考信号进行比较，以确定接合处的载流子激活和端部范围缺陷密度。

公开(公告)号：US08535957B1

公开(公告)日：2013-09-17

申请号：US13077666

申请日：2011-03-31

申请人： Alex Salnik ,  Bin-Ming Benjamin Tsai ,  Lena Nicolaides

发明人： Alex Salnik ,  Bin-Ming Benjamin Tsai ,  Lena Nicolaides

IPC分类号： H01L21/66 ,  G01R31/26

CPC分类号： H01L22/10 ,  G01N21/9501 ,  G01R31/2601 ,  H01L21/265 ,  H01L22/12 ,  H01L22/20

摘要： The present invention may include a first dopant metrology system configured to measure a first plurality of values of at least one parameter of a wafer, an ion implanter configured to implant a plurality of ions into the wafer, a second dopant metrology system configured to measure a second plurality of values of at least one parameter of the wafer following ion implantation of the wafer by the implanter, wherein the first dopant metrology system and the second dopant metrology system are communicatively coupled, an annealer configured to anneal the wafer following ion implantation, and a third dopant metrology system configured to measure a third plurality of values of at least one parameter of the wafer following annealing of the wafer by the annealer, wherein the second dopant metrology system and the third dopant metrology system are communicatively coupled.

公开(公告)号：US06584341B1

公开(公告)日：2003-06-24

申请号：US09628812

申请日：2000-07-28

申请人： Andreas Mandelis ,  Stephen H. Abrams ,  Lena Nicolaides ,  Jose Agustin Garcia-Hecules

发明人： Andreas Mandelis ,  Stephen H. Abrams ,  Lena Nicolaides ,  Jose Agustin Garcia-Hecules

IPC分类号： A61B600

CPC分类号： A61B5/0088

摘要： There is provided a metrologic methodology and instrument, useful for a high-spatial-resolution dynamic diagnostic metrology and instrument, which can provide simultaneous measurements of laser-induced frequency-domain infrared photothermal radiometry (FD-PTR) and alternating-current (ac) modulated luminescence (FD-LM) signals from defects and caries in teeth intraorally. The combination of the luminescence and radiometric frequency scan techniques for inspection of defects and caries in teeth involves irradiating the tooth with a modulated (direct-current (dc) to 100 kHz) excitation source (laser) emitting in the near-ultraviolet, visible, or near-infrared spectral range, generating blackbody Planck-radiation (infrared radiometry) and ac luminescence, and comparing the obtained (amplitude and phase) luminescence and radiometric signals to those obtained from a well characterized sample (reference) to provide the clinician with numerical information on the status of a tooth. The method and device is used to scan teeth intraorally to detect caries and classify caries or the integrity of the enamel or cementum surface, classify the health and integrity of the enamel at the base of occlusal fissures, classify the health and integrity of enamel or cementum surface of the tooth and defects around the margins of restorations, locate the presence of cracks on the enamel or cementum surface, and locate and characterize cracks in dentin on prepared teeth.

摘要翻译： 提供了一种用于高空间分辨率动态诊断计量和仪器的计量方法和仪器，可以提供激光诱导的频域红外光热辐射测量（FD-PTR）和交流（ac） 调制发光（FD-LM）信号从牙齿中的缺陷和龋齿。 用于检查牙齿中的缺陷和龋齿的发光和辐射测量频率扫描技术的组合包括用在近紫外线，可见光区域中发射的调制（直流（dc）至100kHz）激发源（激光）照射牙齿， 或近红外光谱范围，产生黑体普朗克辐射（红外辐射测量）和交流发光，并将获得的（振幅和相位）发光和辐射信号与从良好表征的样品（参考）获得的信号进行比较，以向临床医生提供数字 关于牙齿状况的信息。 该方法和装置用于口内扫描牙齿以检测龋齿和分类龋齿或釉质或牙骨质表面的完整性，将牙釉质基底处的牙釉质的健康和完整性分类，分类牙釉质或牙骨质的健康和完整性 牙齿表面和修复边缘周围的缺陷，定位在牙釉质或牙骨质表面上存在裂纹，并定位并表征牙齿上的牙质上的裂纹。

公开(公告)号：US20050225765A1

公开(公告)日：2005-10-13

申请号：US11143203

申请日：2005-06-02

申请人： Lena Nicolaides ,  Alex Salonik

发明人： Lena Nicolaides ,  Alex Salonik

IPC分类号： G01N21/17 ,  G01N21/95 ,  G01N25/72 ,  G01N21/00

CPC分类号： G01N21/1717 ,  G01N21/171 ,  G01N21/9501

摘要： A method and apparatus for evaluating a semiconductor wafer. A combination of a photothermal modulated reflectance method and system with a photothermal IR radiometry system and method is utilized to provide information which can be used to determine properties of semiconductor wafers being evaluated. The system and method can provide for utilizing a common probe source and a common intensity modulated energy source. The system and method further provide an infrared detector for monitoring changes in infrared radiation emitted from a sample, and photodetector for monitoring changes in beam reflected from the sample.

摘要翻译： 一种用于评估半导体晶片的方法和装置。 利用光热调制反射方法和具有光热IR辐射测量系统和方法的系统的组合来提供可用于确定被评估的半导体晶片的性质的信息。 该系统和方法可以提供利用公共探测源和共同的强度调制能量源。 该系统和方法还提供一种红外检测器，用于监测从样品发射的红外辐射的变化，以及用于监测从样品反射的光束变化的光电检测器。

公开(公告)号：US07755752B1

公开(公告)日：2010-07-13

申请号：US12098979

申请日：2008-04-07

申请人： Alexei Salnik ,  Lena Nicolaides

发明人： Alexei Salnik ,  Lena Nicolaides

IPC分类号： G01N21/00

CPC分类号： G01N21/9501 ,  G01N21/1717 ,  H01L22/12

摘要： The capabilities of the Modulated Optical Reflectance (MOR) technology in dopant metrology applications are combined with the sensitivity of the PhotoReflectance (PR) method in the present system to provide stress and other measurements in semiconductor samples. Such combination enhances the measurement performance of MOR based systems in ion implant applications (implantation dose and energy) and expands system capabilities into a new area of structural parameters measurements, for example, strain in silicon wafers.

摘要翻译： 掺杂剂测量应用中的调制光反射（MOR）技术的能力与本系统中的PhotoReflectance（PR）方法的灵敏度相结合，以在半导体样品中提供应力和其他测量。 这种组合增强了离子注入应用（植入剂量和能量）中基于MOR的系统的测量性能，并将系统能力扩展到结构参数测量的新领域，例如硅晶片中的应变。

公开(公告)号：US07660686B1

公开(公告)日：2010-02-09

申请号：US12098991

申请日：2008-04-07

申请人： Lena Nicolaides ,  Alexei Salnik ,  Bin-ming Benjamin Tsai

发明人： Lena Nicolaides ,  Alexei Salnik ,  Bin-ming Benjamin Tsai

IPC分类号： G01N37/00 ,  G01N21/00

CPC分类号： G01N21/1717 ,  G01N21/9501

摘要： Samples subject to ion implantation are measured using a modulated optical reflectance system and the results of the measurements are compared to specification ranges for acceptable samples and a plurality of parametric ranges. Each parametric range is associated with a different known type of implantation fault. Measurement results outside of the specification range may be characterized by fault type by comparing the measurement results to a plurality of parametric ranges. In this way, a fault type may be quickly identified and the corresponding source of the fault may be corrected.

摘要翻译： 使用调制光学反射系统测量进行离子注入的样品，并将测量结果与可接受样品的规格范围和多个参数范围进行比较。 每个参数范围与不同的已知类型的植入断层相关联。 在规格范围之外的测量结果可以通过将测量结果与多个参数范围进行比较来表征故障类型。 以这种方式，可以快速识别故障类型，并且可以纠正相应的故障源。