公开(公告)号：US07019865B2

公开(公告)日：2006-03-28

申请号：US10066648

申请日：2002-02-06

申请人： Jerry C. Nims ,  Paul Peters ,  William Karszes ,  Wahn Raymer ,  Samuel Pol ,  Suk Lee

发明人： Jerry C. Nims ,  Paul Peters ,  William Karszes ,  Wahn Raymer ,  Samuel Pol ,  Suk Lee

IPC分类号： G06F15/00

CPC分类号： G06T3/4038 ,  G06K15/1853 ,  H04N1/00201 ,  H04N1/23

摘要： A plurality of input digital pixel images, having differing pixel array sizes, are scaled to a plurality of common pixel dimension input images based on a printer resolution value, a data characterizing dimensions of the printed image, and a final size value for at least one of the plurality of digital pixel images. A lenticule resolution data is received. A composite image file is formed of the plurality of scaled input digital pixel images, and at least one left-right image file pair is generated from the composite image file. The left-right image file pair are interlaced and printed on a printer associated with the printer resolution value.

公开(公告)号：US20050236631A1

公开(公告)日：2005-10-27

申请号：US10517819

申请日：2004-06-21

申请人： Suk Lee

发明人： Suk Lee

IPC分类号： H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L27/15

CPC分类号： H01L33/32 ,  H01L33/04 ,  H01L33/12

摘要： A nitride based 3-5 group compound semiconductor light emitting device comprising: a substrate; a buffer layer formed above the substrate; a first In-doped GaN layer formed above the buffer layer; an InxGa1-xN/InyGa1-yN super lattice structure layer formed above the first In-doped GaN layer; a first electrode contact layer formed above the InxGa1-xN/InyGa1-yN super lattice structure layer; an active layer formed above the first electrode contact layer and functioning to emit light; a second In-doped GaN layer; a GaN layer formed above the second In-doped GaN layer; and a second electrode contact layer formed above the GaN layer. The present invention can reduce crystal defects of the nitride based 3-5 group compound semiconductor light emitting device and improve the crystallinity of a GaN GaN based single crystal layer in order to improve the performance of the light emitting device and ensure the reliability thereof.

摘要翻译： 一种基于氮化物的3-5组化合物半导体发光器件，包括：衬底; 形成在所述衬底上的缓冲层; 在缓冲层上形成的第一In掺杂GaN层; 在一个实施方案中，在一个或多个第二实施方案中， N超晶格结构层，形成在第一In掺杂GaN层之上; 形成在第一电极接触层之上的第一电极接触层，其中，第一电极接触层形成在第一和第二 1-y N超晶格结构层; 形成在所述第一电极接触层之上并用于发光的有源层; 第二In掺杂GaN层; 在第二In掺杂GaN层上形成的GaN层; 以及形成在GaN层上方的第二电极接触层。 本发明可以减少氮化物基3-5族化合物半导体发光器件的晶体缺陷，并提高GaN GaN单晶层的结晶度，以提高发光器件的性能并确保其可靠性。

公开(公告)号：US20050230688A1

公开(公告)日：2005-10-20

申请号：US10517818

申请日：2003-08-19

申请人： Suk Lee

发明人： Suk Lee

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01L33/04 ,  H01L33/12 ,  H01L27/15 ,  H01L21/00

CPC分类号： H01L33/007 ,  H01L21/02378 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/04 ,  H01L33/12

摘要： Disclosed a nitride semiconductor LED including: a substrate; a GaN-based buffer layer formed on the substrate; AlyGa1-yN/GaN short period superlattice (SPS) layers formed on the GaN-based buffer layer in a sandwich structure of upper and lower parts having an undoped GaN layer or an indium-doped GaN layer interposed therebetween (Here, 0≦y≦1); a first electrode layer of an n-GaN layer formed on the upper AlyGa1-yN/GaN SPS layer; an active layer formed on the first electrode layer; and a second electrode layer of a p-GaN layer formed on the active layer.

摘要翻译： 公开了一种氮化物半导体LED，包括：基板; 形成在所述基板上的GaN系缓冲层; 在具有未掺杂的上部和下部的夹层结构的GaN基缓冲层上形成的Al x Ga 1-y N / GaN短周期超晶格（SPS）层 GaN层或铟掺杂的GaN层（这里，0 <= y <= 1）; 形成在上部Al y Ga 1-y N / GaN SPS层上的n-GaN层的第一电极层; 形成在所述第一电极层上的有源层; 以及形成在有源层上的p-GaN层的第二电极层。