公开(公告)号：US09658787B2

公开(公告)日：2017-05-23

申请号：US14310450

申请日：2014-06-20

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Chun-Hsiung Hung ,  Kuen-Long Chang ,  Ken-Hui Chen ,  Su-Chueh Lo

IPC: G06F12/00 ,  G06F3/06 ,  G06F12/14

CPC classification number: G06F3/0622 ,  G06F3/062 ,  G06F3/064 ,  G06F3/0652 ,  G06F3/0659 ,  G06F3/0688 ,  G06F12/1416

Abstract: Methods for protecting data on an integrated circuit including a memory are described. One method includes storing protection codes on the integrated circuit. Each protection code has a first value indicating a protected state and a second value indicating an unprotected state for a corresponding sector in a plurality of sectors of the memory. The method includes storing protection mask codes on the integrated circuit. Each mask code has a first value indicating a masked state or a second value indicating an unmasked state for a corresponding sector in the plurality of sectors. The method includes blocking modification in a particular sector of the memory using circuitry on the integrated circuit when the protection code for the particular sector has the first value and the mask code for the particular sector has the second value, else allowing modification in the particular sector.

公开(公告)号：US09412425B2

公开(公告)日：2016-08-09

申请号：US14673530

申请日：2015-03-30

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Yung-Feng Lin ,  Su-Chueh Lo ,  Tai-Feng Chen ,  Yi-Fan Chang

IPC: G11C7/00 ,  G11C7/08 ,  G11C7/06 ,  G11C7/10 ,  G11C7/12

CPC classification number: G11C7/08 ,  G11C7/06 ,  G11C7/1012 ,  G11C7/1048 ,  G11C7/1051 ,  G11C7/1069 ,  G11C7/12

Abstract: A memory device includes a plurality of sense amplifiers coupled with an array of memory cells, a plurality of output data lines receiving outputs of corresponding sense amplifiers, and a plurality of precharge circuits configured to apply a precharge voltage on the output data lines. A controller provides control signals to the sense amplifiers and to the precharge circuits, including to cause the precharge circuits to precharge the output data lines before the sense amplifiers drive output data signals to the output data lines. The plurality of sense amplifiers includes banks of sense amplifiers, and each bank includes a sense amplifier having an output driving each output data line. The memory device includes data output multiplexers having inputs coupled to the output data lines, and the precharge circuits are coupled to the output data lines between outputs of the sense amplifiers and the data output multiplexers.

公开(公告)号：US09286158B2

公开(公告)日：2016-03-15

申请号：US14173873

申请日：2014-02-06

Applicant: Macronix International Co., Ltd.

Inventor： Chien-Hsin Liu ,  Su-Chueh Lo ,  Kuen-Long Chang ,  Ken-Hui Chen ,  Chun-Hsiung Hung

IPC: G06F11/00 ,  H03M13/00 ,  G06F11/10 ,  H03M13/19 ,  H03M13/15

CPC classification number: G06F11/1072 ,  G06F11/1012 ,  H03M13/1575 ,  H03M13/19

Abstract: A programming method, a reading method and an operating system for a memory are provided. The programming method includes the following steps. A data is provided. A parity generation is performed to obtain an error-correcting code (ECC). The memory is programmed to record the data and the error-correcting code. The data is transformed before performing the parity generation, such that a hamming distance between two codes corresponding to two adjacent threshold voltage states in the data to be performed the parity generation is 1.

Abstract translation: 提供了一种用于存储器的编程方法，读取方法和操作系统。 编程方法包括以下步骤。 提供数据。 执行奇偶校验生成以获得纠错码（ECC）。 存储器被编程为记录数据和纠错码。 在执行奇偶校验生成之前变换数据，使得对应于待执行奇偶产生的数据中的两个相邻阈值电压状态的两个代码之间的汉明距离为1。

公开(公告)号：US20150206557A1

公开(公告)日：2015-07-23

申请号：US14673530

申请日：2015-03-30

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Yung-Feng Lin ,  Su-Chueh Lo ,  Tai-Feng Chen ,  Yi-Fan Chang

IPC: G11C7/08 ,  G11C7/12 ,  G11C7/10

CPC classification number: G11C7/08 ,  G11C7/06 ,  G11C7/1012 ,  G11C7/1048 ,  G11C7/1051 ,  G11C7/1069 ,  G11C7/12

Abstract: A memory device includes a plurality of sense amplifiers coupled with an array of memory cells, a plurality of output data lines receiving outputs of corresponding sense amplifiers, and a plurality of precharge circuits configured to apply a precharge voltage on the output data lines. A controller provides control signals to the sense amplifiers and to the precharge circuits, including to cause the precharge circuits to precharge the output data lines before the sense amplifiers drive output data signals to the output data lines. The plurality of sense amplifiers includes banks of sense amplifiers, and each bank includes a sense amplifier having an output driving each output data line. The memory device includes data output multiplexers having inputs coupled to the output data lines, and the precharge circuits are coupled to the output data lines between outputs of the sense amplifiers and the data output multiplexers.

Abstract translation: 存储器件包括与存储器单元阵列耦合的多个读出放大器，接收对应的读出放大器的输出的多个输出数据线以及被配置为在输出数据线上施加预充电电压的多个预充电电路。 控制器向读出放大器和预充电电路提供控制信号，包括在读出放大器将输出数据信号驱动到输出数据线之前使预充电电路对输出数据线进行预充电。 多个读出放大器包括读出放大器组，并且每个存储体包括具有驱动每个输出数据线的输出的读出放大器。 存储器件包括具有耦合到输出数据线的输入的数据输出多路复用器，并且预充电电路耦合到读出放大器和数据输出多路复用器的输出之间的输出数据线。

公开(公告)号：US09001604B2

公开(公告)日：2015-04-07

申请号：US13801500

申请日：2013-03-13

Applicant: Macronix International Co., Ltd.

Inventor： Yung-Feng Lin ,  Su-Chueh Lo ,  Tai-Feng Chen ,  Yi-Fan Chang

IPC: G11C7/00 ,  G11C7/06 ,  G11C7/08 ,  G11C7/10

CPC classification number: G11C7/08 ,  G11C7/06 ,  G11C7/1012 ,  G11C7/1048 ,  G11C7/1051 ,  G11C7/1069 ,  G11C7/12

Abstract: A memory device includes a plurality of sense amplifiers coupled with an array of memory cells, a plurality of output data lines receiving outputs of corresponding sense amplifiers, and a plurality of precharge circuits configured to apply a precharge voltage on the output data lines. A controller provides control signals to the sense amplifiers and to the precharge circuits, including to cause the precharge circuits to precharge the output data lines before the sense amplifiers drive output data signals to the output data lines. The plurality of sense amplifiers includes banks of sense amplifiers, and each bank includes a sense amplifier having an output driving each output data line. The memory device includes data output multiplexers having inputs coupled to the output data lines, and the precharge circuits are coupled to the output data lines between outputs of the sense amplifiers and the data output multiplexers.

Abstract translation: 存储器件包括与存储器单元阵列耦合的多个读出放大器，接收对应的读出放大器的输出的多个输出数据线以及被配置为在输出数据线上施加预充电电压的多个预充电电路。 控制器向读出放大器和预充电电路提供控制信号，包括在读出放大器将输出数据信号驱动到输出数据线之前使预充电电路对输出数据线进行预充电。 多个读出放大器包括读出放大器组，并且每个存储体包括具有驱动每个输出数据线的输出的读出放大器。 存储器件包括具有耦合到输出数据线的输入的数据输出多路复用器，并且预充电电路耦合到读出放大器和数据输出多路复用器的输出之间的输出数据线。

公开(公告)号：US20140269125A1

公开(公告)日：2014-09-18

申请号：US13801500

申请日：2013-03-13

Applicant: MACRONIX INTERNATIONAL CO., LTD.

Inventor： Yung-Feng Lin ,  Su-Chueh Lo ,  Tai-Feng Chen ,  Yi-Fan Chang

IPC: G11C7/06

CPC classification number: G11C7/08 ,  G11C7/06 ,  G11C7/1012 ,  G11C7/1048 ,  G11C7/1051 ,  G11C7/1069 ,  G11C7/12

Abstract: A memory device includes a plurality of sense amplifiers coupled with an array of memory cells, a plurality of output data lines receiving outputs of corresponding sense amplifiers, and a plurality of precharge circuits configured to apply a precharge voltage on the output data lines. A controller provides control signals to the sense amplifiers and to the precharge circuits, including to cause the precharge circuits to precharge the output data lines before the sense amplifiers drive output data signals to the output data lines. The plurality of sense amplifiers includes banks of sense amplifiers, and each bank includes a sense amplifier having an output driving each output data line. The memory device includes data output multiplexers having inputs coupled to the output data lines, and the precharge circuits are coupled to the output data lines between outputs of the sense amplifiers and the data output multiplexers.

Abstract translation: 存储器件包括与存储器单元阵列耦合的多个读出放大器，接收对应的读出放大器的输出的多个输出数据线以及被配置为在输出数据线上施加预充电电压的多个预充电电路。 控制器向读出放大器和预充电电路提供控制信号，包括在读出放大器将输出数据信号驱动到输出数据线之前使预充电电路对输出数据线进行预充电。 多个读出放大器包括读出放大器组，并且每个存储体包括具有驱动每个输出数据线的输出的读出放大器。 存储器件包括具有耦合到输出数据线的输入的数据输出多路复用器，并且预充电电路耦合到读出放大器和数据输出多路复用器的输出之间的输出数据线。

公开(公告)号：US20140210522A1

公开(公告)日：2014-07-31

申请号：US13913139

申请日：2013-06-07

Applicant: Macronix International Co., Ltd.

Inventor： Shang-Chi Yang ,  Ken-Hui Chen ,  Su-Chueh Lo ,  Kuen-Long Chang ,  Chun-Hsiung Hung

IPC: H03K17/14

CPC classification number: H03K17/145

Abstract: Current drivers and biasing circuitry at least partly compensate for manufacturing variations and environmental variations such as supply voltage, temperature, and fabrication process.

Abstract translation: 电流驱动器和偏置电路至少部分地补偿制造变化和环境变化，例如电源电压，温度和制造过程。