公开(公告)号：US20020117664A1

公开(公告)日：2002-08-29

申请号：US09795784

申请日：2001-02-28

Applicant: Motorola, Inc.

Inventor： Ravindranath Droopad

IPC: H01L029/12 ,  H01L021/00 ,  H01L031/072 ,  H01L027/01

CPC classification number: C30B25/20 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02494 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521

Abstract: Compound semiconductor structures and devices can be grown on patterned oxide layers deposited on silicon. The deposition of Group II-VI and Group II-V compound semiconductors on patterned wafers results in an increase in the critical thickness for lattice mismatched layers and the relief of strain energy through side walls. As a result, high crystalline quality compound semiconductor material can be grown on less expensive and more accessible substrate to more cost effectively produce semiconductor components and devices having enhanced reliability.

Abstract translation: 化合物半导体结构和器件可以在沉积在硅上的图案化氧化物层上生长。 II-VI族和II-V族化合物半导体在图案化晶片上的沉积导致晶格失配层的临界厚度增加，并通过侧壁消除应变能。 结果，高结晶质量的化合物半导体材料可以在较便宜且更易于接近的基板上生长，以更经济地生产具有增强的可靠性的半导体部件和器件。

公开(公告)号：US20020088970A1

公开(公告)日：2002-07-11

申请号：US09755341

申请日：2001-01-05

Applicant: Motorola, Inc.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Jerald A. Hallmark

IPC: H01L029/06 ,  H01L029/12 ,  H01L029/15 ,  H01L021/31 ,  H01L021/469

CPC classification number: G02B1/18 ,  B82Y10/00 ,  H01G9/2027 ,  H01L21/31691 ,  H01L49/00 ,  Y02E10/542

Abstract: A quantum structure (300) having photo-catalytic properties includes a monocrystalline substrate (302) and a monocrystalline metal oxide layer (308) formed of a material comprising titanium and oxygen and epitaxially grown overlying the substrate. The quantum structure further includes self-assembled quantum dots (312) disposed on the monocrystalline metal oxide layer and formed of a material comprising copper and oxygen.

Abstract translation: 具有光催化性能的量子结构（300）包括单晶衬底（302）和由包含钛和氧的材料形成的外延生长在衬底上的单晶金属氧化物层（308）。 量子结构还包括设置在单晶金属氧化物层上并由包含铜和氧的材料形成的自组装量子点（312）。

公开(公告)号：US20020047143A1

公开(公告)日：2002-04-25

申请号：US09986024

申请日：2001-11-07

Applicant: MOTOROLA, INC.

Inventor： Jamal Ramdani ,  Ravindranath Droopad ,  Lyndee L. Hilt

IPC: H01L029/76 ,  H01L029/94 ,  H01L031/062 ,  H01L031/113 ,  H01L031/119 ,  H01L023/58

CPC classification number: H01S5/0261 ,  C30B25/18 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/31691 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01L33/16 ,  H01L33/30 ,  H01L2924/0002 ,  H01S5/021 ,  H01L2924/00

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

公开(公告)号：US20020047123A1

公开(公告)日：2002-04-25

申请号：US09986034

申请日：2001-11-07

Applicant: MOTOROLA, INC.

Inventor： Jamal Ramdani ,  Ravindranath Droopad ,  Lyndee L. Hilt

IPC: H01L029/76

CPC classification number: H01S5/0261 ,  C30B25/18 ,  H01L21/02197 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02439 ,  H01L21/02472 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02557 ,  H01L21/0256 ,  H01L21/31691 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/15 ,  H01L33/16 ,  H01L33/30 ,  H01L2924/0002 ,  H01S5/021 ,  H01L2924/00

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.