Light-emitting diode chip and method for producing a light-emitting diode chip
    41.
    发明授权
    Light-emitting diode chip and method for producing a light-emitting diode chip 有权
    发光二极管芯片及其制造方法

    公开(公告)号:US09048383B2

    公开(公告)日:2015-06-02

    申请号:US13809149

    申请日:2011-06-17

    摘要: The invention relates to a light-emitting diode chip, comprising an n-type semiconductor layer (3), a p-type semiconductor layer (4), an active region (2) between the n-type semiconductor layer (3) and the p-type semiconductor layer (4), a lateral surface (14), which limits the n-type semiconductor layer (3), the p-type semiconductor layer (4) and the active region (2) in a lateral direction, and a doped region (1), in which a dopant is introduced into a semiconductor material of the light-emitting diode chip, and/or comprising a neutralized region (1), wherein the doped region (1) and/or the neutralized region (1) are formed at the lateral surface (14) at least in the region of the active region, and the light-emitting diode chip is intended to emit incoherent electromagnetic radiation during operation.

    摘要翻译: 本发明涉及一种发光二极管芯片,包括n型半导体层(3),p型半导体层(4),n型半导体层(3)和 p型半导体层(4),在n方向上限制n型半导体层(3),p型半导体层(4)和有源区域(2)的侧面(14),以及 掺杂区域(1),其中掺杂剂被引入到发光二极管芯片的半导体材料中,和/或包括中和区域(1),其中掺杂区域(1)和/或中和区域 至少在有源区域的区域中在侧表面(14)处形成1),并且发光二极管芯片旨在在操作期间发射不相干的电磁辐射。

    Edge emitting semiconductor laser
    44.
    发明授权
    Edge emitting semiconductor laser 有权
    边缘发射半导体激光器

    公开(公告)号:US08363688B2

    公开(公告)日:2013-01-29

    申请号:US13130444

    申请日:2009-11-19

    IPC分类号: H01S5/00

    摘要: An edge emitting semiconductor laser includes a semiconductor body having a wave guide area. The wave guide area comprises a lower cover layer, a lower wave guide layer, an active layer for generating laser radiation, an upper wave guide layer and an upper cover layer. The wave guide area also includes at least one structured laser radiation scattering area in which a lateral base laser radiation mode experiences less scattering losses than the radiation of higher laser modes.

    摘要翻译: 边缘发射半导体激光器包括具有波导区域的半导体本体。 波导区域包括下覆盖层,下波导层,用于产生激光辐射的有源层,上波导层和上覆盖层。 波导区域还包括至少一个结构化的激光辐射散射区域,其中横向基底激光辐射模式经受比较高激光模式的辐射更少的散射损耗。

    Drilling and/or percussive hammer with no-load operation control
    47.
    发明授权
    Drilling and/or percussive hammer with no-load operation control 失效
    钻孔和/或冲击锤具有空载操作控制

    公开(公告)号:US08235136B2

    公开(公告)日:2012-08-07

    申请号:US11917988

    申请日:2006-06-21

    IPC分类号: B25D11/04

    摘要: A drilling and/or percussive hammer comprises a handle and a hammer housing, which can move relative to the handle and inside of which, among other things, a pneumatic spring percussive mechanism is housed. The pneumatic spring of the pneumatic spring percussive mechanism can be ventilated via a no-load operation duct that is opened and closed by a valve. The valve can be opened and closed according to a pressing force acting upon the handle. A delay device controls the valve during closing so that the valve reaches the position corresponding to the detected pressing force only with a time delay. This causes a smooth transition from the no-load operation to the percussive operation.

    摘要翻译: 钻孔和/或冲击锤包括手柄和锤壳体,其可以相对于手柄移动,并且其内部容纳有气动弹簧冲击机构。 气动弹簧冲击机构的气动弹簧可以通过由阀门打开和关闭的空载操作管道进行通风。 阀可以根据作用在手柄上的按压力而打开和关闭。 延迟装置在关闭期间控制阀门,使得阀门仅在时间延迟的情况下到达与检测到的按压力相对应的位置。 这导致从空载操作到敲击操作的平滑过渡。

    Edge emitting semiconductor laser comprising a waveguide
    49.
    发明授权
    Edge emitting semiconductor laser comprising a waveguide 有权
    包括波导的边缘发射半导体激光器

    公开(公告)号:US07813399B2

    公开(公告)日:2010-10-12

    申请号:US12240493

    申请日:2008-09-29

    申请人: Wolfgang Schmid

    发明人: Wolfgang Schmid

    IPC分类号: H01S5/00

    摘要: In an edge emitting semiconductor laser comprising an active layer (3) that generates laser radiation (13) and is embedded into a first waveguide layer (1), wherein the first waveguide layer (1) is arranged between a first cladding layer (4) and a second cladding layer (5) and is delimited by side facets (9) of the semiconductor laser in a lateral direction, a second waveguide layer (2), into which no active layer is embedded, adjoins the second cladding layer (5), the second waveguide layer (2) being optically coupled to the first waveguide layer (1) at least in partial regions (10, 11), and a third cladding layer (6) is arranged at a side of the second waveguide layer (2) that is remote from the first waveguide layer (1).

    摘要翻译: 在包括产生激光辐射(13)并嵌入第一波导层(1)的有源层(3)的边缘发射半导体激光器中,其中第一波导层(1)被布置在第一覆层(4) 和第二覆层(5),并且由横向方向的半导体激光器的侧面(9)界定,没有有源层嵌入的第二波导层(2)与第二覆层(5)相邻, ,所述第二波导层(2)至少在部分区域(10,11)中光耦合到所述第一波导层(1),并且第三覆层(6)布置在所述第二波导层(2)的一侧 ),其远离第一波导层(1)。

    RADIATION-EMITTING SEMICONDUCTOR BODY FOR A VERTICALLY EMITTING LASER AND METHOD FOR PRODUCING SAME
    50.
    发明申请
    RADIATION-EMITTING SEMICONDUCTOR BODY FOR A VERTICALLY EMITTING LASER AND METHOD FOR PRODUCING SAME 有权
    用于垂直发射激光的辐射发射半导体体及其制造方法

    公开(公告)号:US20090029496A1

    公开(公告)日:2009-01-29

    申请号:US12240147

    申请日:2008-09-29

    IPC分类号: H01L21/02

    摘要: The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.

    摘要翻译: 本发明涉及具有垂直发射方向的辐射发射半导体本体,辐射发生有源层和具有电流阻挡区域和导电区域的导电层,该半导体本体设置为垂直 发射具有外部谐振器的激光器,并且外部谐振器具有与导电性区域重叠的限定的谐振器体积。