公开(公告)号：US20130224421A1

公开(公告)日：2013-08-29

申请号：US13697764

申请日：2011-04-11

申请人： Tadasuke Kamei ,  Takuji Tsujita ,  Jun Hashimoto ,  Takayuki Shimamura ,  Masashi Goto

发明人： Tadasuke Kamei ,  Takuji Tsujita ,  Jun Hashimoto ,  Takayuki Shimamura ,  Masashi Goto

IPC分类号： C04B35/04

CPC分类号： C04B35/04 ,  C04B35/053 ,  C04B2235/3205 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3229 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/44 ,  C04B2235/442 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/94 ,  C04B2235/95 ,  C23C14/3414 ,  H01J9/02 ,  H01J11/40 ,  H01J2211/40 ,  Y10T428/21

摘要： Disclosed herein are a sintered magnesium oxide material which is capable of suppressing the occurrence of splashing during film formation and which is less likely to cause clogging of a supply inlet of a film formation device, a deposition material for PDP-protecting film using the same, and a process for producing the sintered material. The sintered magnesium oxide material contains magnesium oxide, 3 to 50 mass % of an oxide of a Group 2A element other than magnesium in the periodic table, and if necessary, 1000 ppm or less of one or two or more elements selected from the group consisting of aluminum, yttrium, cerium, zirconium, scandium, and chromium, and has a disk-like, elliptical plate-like, polygonal plate-like, or half-moon-like shape or a cubic or rectangular solid shape with rounded apexes.

摘要翻译： 本文公开了一种烧结镁氧化物材料，其能够抑制成膜期间溅射的发生，并且不太可能导致成膜装置的供给入口堵塞，使用其的PDP保护膜用沉积材料， 以及烧结体的制造方法。 烧结的氧化镁材料含有氧化镁，在周期表中含有3〜50质量％的除了镁以外的2A族元素的氧化物，如果需要，还含有1000ppm以下的一种或两种以上选自 铝，钇，铈，锆，钪和铬，并且具有圆盘状，椭圆形板状，多边形板状或半月形形状或具有圆形顶点的立方体或矩形实心形状。

公开(公告)号：US08197883B2

公开(公告)日：2012-06-12

申请号：US12332778

申请日：2008-12-11

申请人： Masashi Goto ,  Shinri Sakai

发明人： Masashi Goto ,  Shinri Sakai

IPC分类号： B41J29/393

CPC分类号： H01L27/3246 ,  H01L51/0005 ,  H01L51/0026

摘要： A method for making en electro-optic device includes a filling step of ejecting liquid matter containing a solvent and a functional layer-forming material into recesses formed in a substrate to fill the recesses with the liquid matter; and a fixing step of removing a solvent component from the liquid matter to fix the functional layer-forming material in the recesses. In the filling step, the concentration of the functional layer-forming material in the liquid matter filling each recess is changed on the basis of the size of an opening width of the recess.

摘要翻译： 一种制造电光装置的方法包括：将包含溶剂和功能层形成材料的液体物质喷射到形成在基板中的凹部以用液体物质填充凹部的填充步骤; 以及从所述液体物质除去溶剂成分以将所述功能层形成材料固定在所述凹部中的固定步骤。 在填充步骤中，填充每个凹部的液体物质中的功能层形成材料的浓度基于凹部的开口宽度的大小而改变。

公开(公告)号：US20090163802A1

公开(公告)日：2009-06-25

申请号：US12295766

申请日：2007-04-02

申请人： Masashi Goto ,  Shigeru Nemoto

发明人： Masashi Goto ,  Shigeru Nemoto

IPC分类号： A61B6/00 ,  A61M5/14

CPC分类号： A61B6/465 ,  A61B6/481 ,  A61B6/487 ,  A61M5/1452 ,  G06F19/00 ,  G06F19/321

摘要： A liquid injector (400) injects a medical liquid into a patient whose fluoroscopic image data is to be picked up, and generates injection history data corresponding to the injection. A control box (500) allocates identification data associated with the fluoroscopic image data to the injection history data, and PACS (300) stores the fluoroscopic image data and the injection history data allocated with the identification data. The injection history data is also stored in association with the fluoroscopic image data to be stored, and hence the injection history data can also be confirmed when viewing the fluoroscopic image data.

摘要翻译： 液体注射器（400）将医用液体注入到要摄取荧光图像数据的患者中，并且生成与注射相对应的注射历史数据。 控制箱（500）将与透视图像数据相关联的识别数据分配给喷射历史数据，并且PACS（300）存储分配有识别数据的透视图像数据和喷射历史数据。 注射历史数据也与要存储的透视图像数据相关联地存储，因此也可以在观察透视图像数据时确认注射历史数据。

公开(公告)号：US20080079664A1

公开(公告)日：2008-04-03

申请号：US11632717

申请日：2005-07-05

申请人： Satoshi Ikeda ,  Yoshinori Yamada ,  Katsumi Adachi ,  Mikihiko Nishitani ,  Masashi Goto

发明人： Satoshi Ikeda ,  Yoshinori Yamada ,  Katsumi Adachi ,  Mikihiko Nishitani ,  Masashi Goto

IPC分类号： G09G3/28

CPC分类号： G09G3/288 ,  G09G3/294 ,  G09G2330/028 ,  G09G2360/16

摘要： In a plasma display device, a lighting rate is calculated from a video signal input in a plasma display device, and an output current of DC-DC converter (140), which is the same as a discharge current in a sustain period corresponding to the lighting rate, is synchronized with a generation timing of discharge current. With such a configuration, even if discharge current in the sustain period of each subfield is rapidly changed, a sustain pulse voltage can be kept constant.

摘要翻译： 在等离子体显示装置中，从等离子体显示装置中输入的视频信号和与对应于等离子体显示装置的维持期间的放电电流相同的DC-DC转换器（140）的输出电流来计算点亮率 照明率与放电电流的产生定时同步。 通过这样的结构，即使各子场的维持期间的放电电流迅速变化，维持脉冲电压也能保持恒定。

公开(公告)号：US20080061692A1

公开(公告)日：2008-03-13

申请号：US11576098

申请日：2005-10-05

申请人： Masanori Miura ,  Yukihiro Morita ,  Shinichiro Hashimoto ,  Kyohei Yoshino ,  Junko Matsushita ,  Masashi Goto

发明人： Masanori Miura ,  Yukihiro Morita ,  Shinichiro Hashimoto ,  Kyohei Yoshino ,  Junko Matsushita ,  Masashi Goto

IPC分类号： H01J17/49 ,  H01J9/02 ,  H05B33/10

CPC分类号： H01J11/12 ,  H01J1/74 ,  H01J9/20 ,  H01J11/42

摘要： A PDP capable of lowering a discharge initiating voltage with a weak discharge always stabilized during an initialization period even if a Xe partial pressure ratio to a total pressure in discharge gas is increased, improving an image quality with the occurrence of an initializing bright point prevented, preventing the lowering of a light emission efficiency and brightness, and improving brightness; and a production method for simply producing the PDP. The PDP comprises a front panel and a rear panel disposed facing each other with a discharge space provided between them. A fluorescent layer is formed in the area on the discharge space side of the rear panel, and a fluorescent film as a high γ portion is formed in part of the area of its surface. The fluorescent film is formed of a material higher in secondary electron emission coefficient γ than a fluorescent material constituting the fluorescent layer. Part of the surface of the fluorescent layer is covered with the fluorescent film, with the other part facing the discharge space.

摘要翻译： 即使Xe分压比与放电气体中的总压力相比，即使在初始化期间，能够以弱放电降低放电起始电压的PDP始终保持稳定，从而防止初始化亮点的发生提高图像质量， 防止发光效率和亮度降低，亮度提高; 以及简单地制造PDP的制造方法。 PDP包括前面板和后面板，它们彼此面对设置有设置在它们之间的放电空间。 在后面板的放电空间侧的区域中形成荧光层，并且在其表面的一部分区域形成作为高伽马部分的荧光膜。 荧光膜由构成荧光层的荧光材料的二次电子发射系数γ的材料形成。 荧光层的一部分表面被荧光膜覆盖，另一部分面向放电空间。

公开(公告)号：US07311796B2

公开(公告)日：2007-12-25

申请号：US10681615

申请日：2003-10-08

申请人： Masashi Goto ,  Yukihiko Nakata ,  Kazufumi Azuma ,  Tetsuya Okamoto

发明人： Masashi Goto ,  Yukihiko Nakata ,  Kazufumi Azuma ,  Tetsuya Okamoto

IPC分类号： H01L21/306 ,  C23C16/00 ,  C23C14/34

CPC分类号： H01J37/32192 ,  C23C16/511

摘要： A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber such that the one end side opposes the dielectric member; an electromagnetic wave source 20 provided on the other end side of the wave guide; a plurality of holes 38, 40, 42, 44, 46 provided on a surface opposing the dielectric member of the wave guide; and hole area adjusting means 18 provided in at least one of the above-mentioned holes so as to adjust the opening area of the hole.

摘要翻译： 等离子体处理装置包括：具有至少一个开口并用于产生等离子体的室12; 设置成气密地覆盖开口的电介质部件14; 至少一个波导16，其设置在所述室的外部，使得所述一端侧与所述电介质构件相对; 设置在波导管的另一端侧的电磁波源20; 设置在与波导的电介质构件相对的表面上的多个孔38,40,42,44,46; 以及设置在至少一个所述孔中的孔区域调节装置18，以调节孔的开口面积。

公开(公告)号：US20070034157A1

公开(公告)日：2007-02-15

申请号：US11584566

申请日：2006-10-23

申请人： Yukihiko Nakata ,  Kazufumi Azuma ,  Tetsuya Okamoto ,  Masashi Goto

发明人： Yukihiko Nakata ,  Kazufumi Azuma ,  Tetsuya Okamoto ,  Masashi Goto

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01J37/32229 ,  C23C16/511 ,  H01J37/32192

摘要： Disclosed is a plasma processing apparatus for performing a plasma processing, comprising an electromagnetic wave source for generating an electromagnetic wave, a rectangular waveguide, a plurality of slots formed in the rectangular waveguide and constituting a waveguide antenna, an electromagnetic wave radiation window consisting of a dielectric body, and a vacuum chamber, wherein a plasma is generated by an electromagnetic wave radiated from the slots into the vacuum chamber through the electromagnetic wave radiation window, the plasma processing apparatus being constructed to include an electromagnetic wave distributing waveguide portion for distributing the electromagnetic wave generated from the electromagnetic wave source into each of the waveguides, the plural waveguides being branched from the electric field plane or a plane perpendicular to the magnetic field plane of the electromagnetic wave distributing waveguide portion.

摘要翻译： 公开了一种用于执行等离子体处理的等离子体处理装置，包括用于产生电磁波的电磁波源，矩形波导，形成在矩形波导中并构成波导天线的多个槽，电磁波辐射窗， 电介质体和真空室，其中通过电磁波辐射窗通过从槽辐射到真空室中的电磁波产生等离子体，等离子体处理装置被构造成包括用于分配电磁波的电磁波分配波导部分 从电磁波源产生的每个波导的波形，多个波导从电场平面或与电磁波分配波导部分的磁场平面垂直的平面分支。

公开(公告)号：US06806498B2

公开(公告)日：2004-10-19

申请号：US10218310

申请日：2002-08-15

申请人： Yoshinao Taketomi ,  Keizaburo Kuramasu ,  Masumi Izuchi ,  Hiroshi Satani ,  Hiroshi Tsutsu ,  Hikaru Nishitani ,  Mikihiko Nishitani ,  Masashi Goto ,  Yoshiko Mino

发明人： Yoshinao Taketomi ,  Keizaburo Kuramasu ,  Masumi Izuchi ,  Hiroshi Satani ,  Hiroshi Tsutsu ,  Hikaru Nishitani ,  Mikihiko Nishitani ,  Masashi Goto ,  Yoshiko Mino

IPC分类号： H01L31036

CPC分类号： H01L21/02532 ,  H01L21/02609 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02689 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/316 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.

摘要翻译： 在多晶硅薄膜晶体管中，通过增加硅薄膜的晶粒尺寸来实现具有高场效应迁移率的半导体器件。 首先，在透明绝缘基板201上形成具有双层结构的绝缘层。在绝缘层中，与透明绝缘基板201接触的下绝缘层202被制成具有较高的热导率 之后，上绝缘层203被图案化，从而在其上形成多个条纹。 随后，在图案化绝缘层上形成非晶硅薄膜204，并且在上绝缘层203上沿与平行于条纹图案的方向扫描的激光照射绝缘层。因此，非晶硅薄膜203 形成多晶硅薄膜210。

公开(公告)号：US06528397B1

公开(公告)日：2003-03-04

申请号：US09581768

申请日：2000-06-16

申请人： Yoshinao Taketomi ,  Keizaburo Kuramasu ,  Masumi Izuchi ,  Hiroshi Satani ,  Hiroshi Tsutsu ,  Hikaru Nishitani ,  Mikihiko Nishitani ,  Masashi Goto ,  Yoshiko MIno

发明人： Yoshinao Taketomi ,  Keizaburo Kuramasu ,  Masumi Izuchi ,  Hiroshi Satani ,  Hiroshi Tsutsu ,  Hikaru Nishitani ,  Mikihiko Nishitani ,  Masashi Goto ,  Yoshiko MIno

IPC分类号： H01L2136

CPC分类号： H01L21/02532 ,  H01L21/02609 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02689 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/316 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203 is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.

摘要翻译： 在多晶硅薄膜晶体管中，通过增加硅薄膜的晶粒尺寸来实现具有高场效应迁移率的半导体器件。 首先，在透明绝缘基板201上形成具有双层结构的绝缘层。在绝缘层中，与透明绝缘基板201接触的下绝缘层202被制成具有较高的热导率 之后，上绝缘层203被图案化，从而在其上形成多个条纹。 随后，在图案化绝缘层上形成非晶硅薄膜204，并且在上绝缘层203上沿与平行于条纹图案的方向扫描的激光照射绝缘层。因此，非晶硅薄膜203 形成多晶硅薄膜210。