公开(公告)号：US07710356B2

公开(公告)日：2010-05-04

申请号：US11632717

申请日：2005-07-05

申请人： Satoshi Ikeda ,  Yoshinori Yamada ,  Katsumi Adachi ,  Mikihiko Nishitani ,  Masashi Goto

发明人： Satoshi Ikeda ,  Yoshinori Yamada ,  Katsumi Adachi ,  Mikihiko Nishitani ,  Masashi Goto

IPC分类号： G09G3/28

CPC分类号： G09G3/288 ,  G09G3/294 ,  G09G2330/028 ,  G09G2360/16

摘要： A lighting rate is calculated from a video signal input in a plasma display device, and an output current of DC-DC converter, which is the same as a discharge current in a sustain period corresponding to the lighting rate, is synchronized with a generation timing of discharge current. With such a configuration, even if discharge current in the sustain period of each subfield is rapidly changed, a sustain pulse voltage can be kept constant.

摘要翻译： 从等离子体显示装置中输入的视频信号计算照明率，与发光时间对应的维持期间的放电电流相同的DC-DC转换器的输出电流与发生定时同步 的放电电流。 通过这样的结构，即使各子场的维持期间的放电电流迅速变化，维持脉冲电压也能保持恒定。

公开(公告)号：US20070029908A1

公开(公告)日：2007-02-08

申请号：US10576213

申请日：2004-10-28

申请人： Masashi Goto ,  Mikihiko Nishitani ,  Katsumi Adachi ,  Yoshinori Yamada ,  Satoshi Ikeda

发明人： Masashi Goto ,  Mikihiko Nishitani ,  Katsumi Adachi ,  Yoshinori Yamada ,  Satoshi Ikeda

IPC分类号： H01J21/10

CPC分类号： H01J11/24 ,  H01J11/12 ,  H01J2211/245

摘要： A plasma display panel in which a plurality of pairs of display electrodes extending in a row direction are aligned on a surface of a first substrate, a plurality of address electrodes extending in a column direction are disposed in a stripe pattern on a surface of a second substrate, the first and second substrates are disposed opposite each other so that the pairs of display electrodes and the address electrodes cross over sandwiching discharge space therebetween, and a discharge cell is formed corresponding to each crossover portion. The pairs of display electrodes are composed of a metallic material, each display electrode of each pair of display electrodes includes a base part extending in the row direction and a plurality of opposing parts extending from the base part into a discharge interval between the each pair of display electrodes. In each discharge cell, at least two discharge starting gaps are formed, each discharge starting gap existing between opposing parts that respectively belong each of the pair display electrodes and being at least partially over the address electrode. Discharge space exists between the each discharge starting gap and the address electrode, and peaks in electric field intensity are formed at each of the opposing parts.

摘要翻译： 一种等离子体显示面板，其中沿行方向延伸的多对显示电极在第一基板的表面上排列，沿列方向延伸的多个寻址电极以条纹图案设置在第二基板的表面上 基板，第一基板和第二基板彼此相对布置，使得成对的显示电极和寻址电极在其间夹着放电空间交叉，并且对应于每个交叉部分形成放电单元。 这些显示电极对由金属材料构成，每对显示电极的每个显示电极包括沿行方向延伸的基部和从基部延伸到每对显示电极之间的放电间隔的多个相对部分 显示电极。 在每个放电单元中，形成至少两个放电起始间隙，每个放电起始间隙存在于分别对应于每对显示电极并且至少部分地位于寻址电极之间的相对部分之间。 在每个放电起始间隙和寻址电极之间存在放电空间，并且在每个相对部分处形成电场强度的峰值。

公开(公告)号：US20070052348A1

公开(公告)日：2007-03-08

申请号：US10576671

申请日：2004-10-28

申请人： Masashi Goto ,  Mikihiko Nishitani ,  Katsumi Adachi ,  Yoshinori Yamada ,  Satoshi Ikeda

发明人： Masashi Goto ,  Mikihiko Nishitani ,  Katsumi Adachi ,  Yoshinori Yamada ,  Satoshi Ikeda

IPC分类号： H01J1/62

CPC分类号： H01J11/24 ,  H01J11/12 ,  H01J2211/245

摘要： The present invention is a plasma display panel in which a plurality of pairs of display electrodes extending in a row direction are disposed on a surface of a first substrate and a plurality of discharge cells are formed along each pair of display electrodes, wherein, at least within each discharge cell, each display electrode of the pair of display electrodes comprises a bus line and a band-shaped electrode member that is electrically connected to the bus line, the band-shaped electrode member extending in the row direction and being disposed at least mainly on a same side of the bus line as a gap between the pair of display electrodes, and each band-shaped electrode member has at least one cut-out formed from a gap-side edge towards the bus line, each cut-out having a length that is shorter than a distance between the gap-side edge and the bus line. When the plasma display panel is driven, peaks in electric field intensity are respectively formed in the discharge cell in regions of the electrode member on both sides of the cut-outs. Here, The display electrodes can be constructed from bus lines and transparent electrodes both extending in the row direction, and the band-shaped electrode member can be a transparent electrode.

摘要翻译： 本发明是一种等离子体显示面板，其中沿着行方向延伸的多对显示电极设置在第一基板的表面上，并且沿着每对显示电极形成多个放电单元，其中至少 在每个放电单元内，一对显示电极的每个显示电极包括母线和与母线电连接的带状电极构件，带状电极构件沿行方向延伸并且至少设置 主要在总线的同一侧作为一对显示电极之间的间隙，并且每个带状电极构件具有从间隙侧边缘朝向总线形成的至少一个切口，每个切口具有 长度短于间隙侧边缘和总线之间的距离。 当驱动等离子体显示面板时，在切口两侧的电极构件的区域中，在放电单元中分别形成有电场强度的峰值。 这里，显示电极可以由沿行方向延伸的总线线路和透明电极构成，带状电极部件也可以是透明电极。

公开(公告)号：US20080079664A1

公开(公告)日：2008-04-03

申请号：US11632717

申请日：2005-07-05

申请人： Satoshi Ikeda ,  Yoshinori Yamada ,  Katsumi Adachi ,  Mikihiko Nishitani ,  Masashi Goto

发明人： Satoshi Ikeda ,  Yoshinori Yamada ,  Katsumi Adachi ,  Mikihiko Nishitani ,  Masashi Goto

IPC分类号： G09G3/28

CPC分类号： G09G3/288 ,  G09G3/294 ,  G09G2330/028 ,  G09G2360/16

摘要： In a plasma display device, a lighting rate is calculated from a video signal input in a plasma display device, and an output current of DC-DC converter (140), which is the same as a discharge current in a sustain period corresponding to the lighting rate, is synchronized with a generation timing of discharge current. With such a configuration, even if discharge current in the sustain period of each subfield is rapidly changed, a sustain pulse voltage can be kept constant.

摘要翻译： 在等离子体显示装置中，从等离子体显示装置中输入的视频信号和与对应于等离子体显示装置的维持期间的放电电流相同的DC-DC转换器（140）的输出电流来计算点亮率 照明率与放电电流的产生定时同步。 通过这样的结构，即使各子场的维持期间的放电电流迅速变化，维持脉冲电压也能保持恒定。

公开(公告)号：US06846728B2

公开(公告)日：2005-01-25

申请号：US10379539

申请日：2003-03-06

申请人： Masashi Goto ,  Mikihiko Nishitani ,  Masaharu Terauchi

发明人： Masashi Goto ,  Mikihiko Nishitani ,  Masaharu Terauchi

IPC分类号： G02F1/136 ,  C23C16/509 ,  C23C16/511 ,  G02F1/1368 ,  H01L21/20 ,  H01L21/205 ,  H01L21/336 ,  H01L29/786 ,  H01L31/04 ,  H01L21/36

CPC分类号： H01L29/66765 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  H01L29/78678 ,  Y02E10/545 ,  Y02E10/546

摘要： By applying ion or optical energy or catalytic effects at the time of depositing a crystalline silicon thin film, improvements in crystallinity of the crystalline silicon thin film in proximities of an interface of a substrate or smoothing of its surface may be achieved. With this arrangement, it is possible to achieve improvements in crystallinity of the crystalline silicon film that is formed in a low temperature condition through CVD method and to prevent concaves and convexes from being formed on its surface or to prevent oxidation of grain fields, and it is accordingly possible to provide a thin film transistor, a semiconductor device such as a solar cell and methods for manufacturing these that exhibit superior characteristics and reliability.

摘要翻译： 通过在沉积晶体硅薄膜时施加离子或光能或催化作用，可以实现晶体硅薄膜在基底界面附近或其表面平滑度附近的结晶度的改善。 通过这种布置，可以通过CVD法在低温条件下形成的结晶硅膜的结晶度得到改善，并且防止在其表面上形成凹凸或防止晶粒的氧化，并且 因此可以提供薄膜晶体管，诸如太阳能电池的半导体器件及其制造方法，其具有优异的特性和可靠性。

公开(公告)号：US06913986B2

公开(公告)日：2005-07-05

申请号：US10240570

申请日：2001-04-04

申请人： Mikihiko Nishitani ,  Masashi Goto

发明人： Mikihiko Nishitani ,  Masashi Goto

IPC分类号： G02F1/1368 ,  H01L21/20 ,  H01L21/205 ,  H01L21/00

CPC分类号： H01L21/02422 ,  G02F1/1368 ,  H01L21/02532 ,  H01L21/0262

摘要： A method of fabricating a thin film includes: forming, on a substrate, a thin film with film properties varying from region to region on the substrate, by selectively heating the substrate; and patterning the thin film in a predetermined pattern by etching the thin film to selectively remove only a portion of the thin film with specified film properties. The method reduces the fabrication process temperature and the number of fabrication steps, while inhibiting degradation in device performance.

摘要翻译： 一种制造薄膜的方法包括：通过选择性地加热所述衬底，在衬底上形成膜性质在衬底上的区域之间变化的薄膜; 并通过蚀刻薄膜以预定图案形成薄膜，以选择性地仅去除具有特定膜特性的薄膜的一部分。 该方法降低了制造工艺温度和制造步骤的数量，同时抑制了器件性能的降低。

公开(公告)号：US06548380B1

公开(公告)日：2003-04-15

申请号：US09658667

申请日：2000-09-08

申请人： Masashi Goto ,  Mikihiko Nishitani ,  Masaharu Terauchi

发明人： Masashi Goto ,  Mikihiko Nishitani ,  Masaharu Terauchi

IPC分类号： H01L2120

CPC分类号： H01L29/66765 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  H01L29/78678 ,  Y02E10/545 ,  Y02E10/546

摘要： By applying ion or optical energy or catalytic effects at the time of depositing a crystalline silicon thin film, improvements in crystallinity of the crystalline silicon thin film in proximities of an interface of a substrate or smoothing of its surface may be achieved. With this arrangement, it is possible to achieve improvements in crystallinity of the crystalline silicon film that is formed in a low temperature condition through CVD method and to prevent concaves and convexes from being formed on its surface or to prevent oxidation of grain fields, and it is accordingly possible to provide a thin film transistor, a semiconductor device such as a solar cell and methods for manufacturing these that exhibit superior characteristics and reliability.

摘要翻译： 通过在沉积晶体硅薄膜时施加离子或光能或催化作用，可以实现晶体硅薄膜在基底界面附近或其表面平滑度附近的结晶度的改善。 通过这种布置，可以通过CVD法在低温条件下形成的结晶硅膜的结晶度得到改善，并且防止在其表面上形成凹凸或防止晶粒的氧化，并且 因此可以提供薄膜晶体管，诸如太阳能电池的半导体器件及其制造方法，其具有优异的特性和可靠性。

公开(公告)号：US06806498B2

公开(公告)日：2004-10-19

申请号：US10218310

申请日：2002-08-15

申请人： Yoshinao Taketomi ,  Keizaburo Kuramasu ,  Masumi Izuchi ,  Hiroshi Satani ,  Hiroshi Tsutsu ,  Hikaru Nishitani ,  Mikihiko Nishitani ,  Masashi Goto ,  Yoshiko Mino

发明人： Yoshinao Taketomi ,  Keizaburo Kuramasu ,  Masumi Izuchi ,  Hiroshi Satani ,  Hiroshi Tsutsu ,  Hikaru Nishitani ,  Mikihiko Nishitani ,  Masashi Goto ,  Yoshiko Mino

IPC分类号： H01L31036

CPC分类号： H01L21/02532 ,  H01L21/02609 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02689 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/316 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.

摘要翻译： 在多晶硅薄膜晶体管中，通过增加硅薄膜的晶粒尺寸来实现具有高场效应迁移率的半导体器件。 首先，在透明绝缘基板201上形成具有双层结构的绝缘层。在绝缘层中，与透明绝缘基板201接触的下绝缘层202被制成具有较高的热导率 之后，上绝缘层203被图案化，从而在其上形成多个条纹。 随后，在图案化绝缘层上形成非晶硅薄膜204，并且在上绝缘层203上沿与平行于条纹图案的方向扫描的激光照射绝缘层。因此，非晶硅薄膜203 形成多晶硅薄膜210。

公开(公告)号：US06528397B1

公开(公告)日：2003-03-04

申请号：US09581768

申请日：2000-06-16

申请人： Yoshinao Taketomi ,  Keizaburo Kuramasu ,  Masumi Izuchi ,  Hiroshi Satani ,  Hiroshi Tsutsu ,  Hikaru Nishitani ,  Mikihiko Nishitani ,  Masashi Goto ,  Yoshiko MIno

发明人： Yoshinao Taketomi ,  Keizaburo Kuramasu ,  Masumi Izuchi ,  Hiroshi Satani ,  Hiroshi Tsutsu ,  Hikaru Nishitani ,  Mikihiko Nishitani ,  Masashi Goto ,  Yoshiko MIno

IPC分类号： H01L2136

CPC分类号： H01L21/02532 ,  H01L21/02609 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02689 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/316 ,  H01L29/66757 ,  H01L29/78675 ,  H01L29/78696

摘要： In a polycrystalline silicon thin film transistor, a semiconductor device having a high field effect mobility is achieved by increasing a grain size of a silicon thin film. First, an insulation layer having a two-layer structure is formed on a transparent insulated substrate 201. In the insulation layer, a lower insulation layer 202, which is in contact with the transparent insulating substrate 201, is made to have a higher thermal conductivity than an upper insulation layer 203. Thereafter, the upper insulation layer 203 is patterned so that a plurality of stripes are formed thereon. Subsequently, an amorphous silicon thin film 204 is formed on the patterned insulation layer, and the insulation layer is irradiated with a laser light scanning in a direction parallel to the stripe pattern on the upper insulation layer 203. Thus, the amorphous silicon thin film 203 is formed into a polycrystalline silicon thin film 210.

摘要翻译： 在多晶硅薄膜晶体管中，通过增加硅薄膜的晶粒尺寸来实现具有高场效应迁移率的半导体器件。 首先，在透明绝缘基板201上形成具有双层结构的绝缘层。在绝缘层中，与透明绝缘基板201接触的下绝缘层202被制成具有较高的热导率 之后，上绝缘层203被图案化，从而在其上形成多个条纹。 随后，在图案化绝缘层上形成非晶硅薄膜204，并且在上绝缘层203上沿与平行于条纹图案的方向扫描的激光照射绝缘层。因此，非晶硅薄膜203 形成多晶硅薄膜210。

公开(公告)号：US08956740B2

公开(公告)日：2015-02-17

申请号：US13213687

申请日：2011-08-19

申请人： Shotaro Watanabe ,  Masashi Goto

发明人： Shotaro Watanabe ,  Masashi Goto

IPC分类号： H01L51/54 ,  H01L51/56 ,  B05C5/00 ,  H01L51/00 ,  H01L51/50

CPC分类号： H01L51/0007 ,  H01L51/0039 ,  H01L51/5056 ,  Y10S428/917

摘要： A film-forming ink includes: film-forming materials containing a π-conjugated compounds; and a liquid medium which is capable of dissolving or dispersing the film-forming material and containing a compound represented by the following formula (I), wherein the compound is one in which the substituent of at least one of R1 to R6 is a linear or branched alkyl group, and the molecular structure of the one substituent is larger than the molecular structure of another substituent, and thus, the molecular weight of the whole molecule is biased towards the side where the one substituent is present.

摘要翻译： 成膜油墨包括：含有共轭化合物的成膜材料; 和能够溶解或分散成膜材料并含有由下式（I）表示的化合物的液体介质，其中该化合物是其中R 1至R 6中的至少一个的取代基为直链或 支链烷基，一个取代基的分子结构大于另一取代基的分子结构，因此整个分子的分子量偏向存在一个取代基的一侧。