公开(公告)号：US06990864B2

公开(公告)日：2006-01-31

申请号：US10298604

申请日：2002-11-19

申请人： Minekazu Sakai

发明人： Minekazu Sakai

IPC分类号： G01P15/125 ,  G01P9/04

CPC分类号： G01P15/125 ,  G01P15/18 ,  G01P2015/0814 ,  G01P2015/082

摘要： A semiconductor dynamic quantity sensor includes a semiconductor substrate that includes a movable electrode, a pair of first fixed electrodes, and a pair of second fixed electrodes. The first and second pairs of first detection capacitances and the first and second pairs of second detection capacitances are formed by the electrodes. The dynamic quantity related to the force applied to the sensor is measured on the basis of the sum of the differential output between the first pair of the first detection capacitances, the differential output between the second pair of the first detection capacitances, the differential output between the first pair of the second detection capacitances, and the differential output between the second pair of the second detection capacitances, when the movable electrode moves along the first direction or the second direction under the force. The sum includes a relatively small amount of noises.

公开(公告)号：US06841840B2

公开(公告)日：2005-01-11

申请号：US10616205

申请日：2003-07-10

申请人： Minekazu Sakai

发明人： Minekazu Sakai

IPC分类号： B81B3/00 ,  G01P15/125 ,  H01L29/84 ,  H01L29/82

CPC分类号： B81B3/0072 ,  B81B2201/0235 ,  B81B2203/0136 ,  G01P15/125 ,  G01P2015/0814

摘要： A capacitive dynamic quantity sensor includes a substrate, a weight, a movable electrode, an anchor, a fixed electrode, a spring, and a strain buffer. The weight is displaced by a dynamic quantity. The movable electrode is integrated with the weight. The anchor is fixed to the substrate to suspend the weight and the movable electrode above the substrate. The fixed electrode is arranged to face the movable electrode. The displacement of the movable electrode caused in response to the dynamic quantity is detected as a capacitance variation between the electrodes. The spring is located between the anchor and the weight and resiliently deforms in response to the dynamic quantity such that the movable electrode is displaced by a distance corresponding to the dynamic quantity. The strain buffer is located between the anchor and the spring to reduce the influence of a strain generated in the substrate on the spring.

摘要翻译： 电容动态量传感器包括基板，重物，可动电极，锚固件，固定电极，弹簧和应变缓冲器。 重量由动态数量所取代。 可动电极与重量一体。 锚固件固定到基板上，以将重物和可动电极悬挂在基板上方。 固定电极布置成面对可动电极。 检测到响应于动态量而引起的可移动电极的位移作为电极之间的电容变化。 弹簧位于锚固件和重物之间，并且响应于动态量而弹性变形，使得可移动电极移动与动态量相对应的距离。 应变缓冲器位于锚固件和弹簧之间，以减少在基板上产生的应变对弹簧的影响。

公开(公告)号：US20140139241A1

公开(公告)日：2014-05-22

申请号：US14116149

申请日：2012-05-22

申请人： Minekazu Sakai ,  Naohisa Niimi

发明人： Minekazu Sakai ,  Naohisa Niimi

IPC分类号： G01N27/22

CPC分类号： G01N27/223 ,  G01N27/048 ,  G01N27/225 ,  H01L2224/48137 ,  H01L2224/8592

摘要： A humidity sensor includes a detection device with a capacitance changing with humidity at a first ratio and a reference device with a capacitance changing with humidity at a second ratio smaller than the first ratio. The detection device has detection electrodes facing each other with a first gap and a detection humidity-sensitive film covering the detection electrodes. The reference device has reference electrodes facing each other with a second gap and a reference humidity-sensitive film covering the reference electrodes. The detection humidity-sensitive film and the reference humidity-sensitive film are made from the same material and have the same thickness. The detection electrodes and the reference electrodes are made from the same material and have the same width and thickness. The second ratio peaks when the second gap is equal to a predetermined value. The second gap is smaller than the first gap and the predetermined value.

摘要翻译： 一种湿度传感器包括具有以第一比例的湿度变化的电容的检测装置和具有小于第一比率的第二比率的电容随湿度变化的参考装置。 检测装置具有检测电极，第一间隙彼此面对，检测用湿敏膜覆盖检测电极。 参考装置具有彼此面对的具有第二间隙的参考电极和覆盖参考电极的参考湿度敏感膜。 检测用湿度敏感膜和基准湿度敏感膜由相同的材料制成，厚度相同。 检测电极和参考电极由相同的材料制成并且具有相同的宽度和厚度。 当第二间隙等于预定值时，第二比率达到峰值。 第二间隙小于第一间隙和预定值。

公开(公告)号：US20060097331A1

公开(公告)日：2006-05-11

申请号：US11294580

申请日：2005-12-06

申请人： Koji Hattori ,  Takao Yoneyama ,  Ryuichiro Abe ,  Minekazu Sakai ,  Shigenori Yamauchi

发明人： Koji Hattori ,  Takao Yoneyama ,  Ryuichiro Abe ,  Minekazu Sakai ,  Shigenori Yamauchi

IPC分类号： H01L29/82

CPC分类号： G01C19/5719 ,  B81C1/0023 ,  B81C1/00238 ,  G01P1/023 ,  G01P15/125 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/1305 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： A sensor device includes a sensor chip having a movable portion on one surface, a circuit chip laminated with the sensor chip to be opposite to the movable portion of the sensor chip, and a bump located between the sensor chip and the circuit chip. In the sensor device, the sensor chip and the circuit chip are electrically connected through the bump, and the movable portion of the sensor chip is separated from the circuit chip by a space using the bump. Accordingly, it can effectively restrict parasitic capacity of an electric connecting portion between both the chips from being changed by an impact. For example, the sensor device can be used as an angular velocity sensor device having a vibrator as the movable portion.

摘要翻译： 传感器装置包括在一个表面上具有可移动部分的传感器芯片，与传感器芯片层叠以与传感器芯片的可移动部分相对的电路芯片，以及位于传感器芯片和电路芯片之间的凸块。 在传感器装置中，传感器芯片和电路芯片通过凸块电连接，并且传感器芯片的可移动部分使用凸块与电路芯片分离。 因此，能够有效地抑制两个芯片之间的电连接部的寄生容量受到冲击而变化。 例如，传感器装置可以用作具有振动器作为可动部分的角速度传感器装置。

公开(公告)号：US20050087015A1

公开(公告)日：2005-04-28

申请号：US10994283

申请日：2004-11-23

申请人： Minekazu Sakai

发明人： Minekazu Sakai

IPC分类号： G01P15/125 ,  H01L29/84

CPC分类号： G01P15/125 ,  G01P2015/0814

摘要： In a capacitive type dynamic quantity sensor, a width of a beam in a beam portion extending in a direction that is perpendicular to a predetermined deformation direction and a gap disposed between a movable electrode and the fixed electrode in the predetermined deformation direction are approximately identical. Accordingly, manufacturing error is prevented from affecting the sensitivity of the capacitive type dynamic quantity sensor. For example, a manufacturing tolerance error of ±2.5% is allowed as a result of designing the width of the beam and the gap to be identical in length.

摘要翻译： 在电容型动态量传感器中，沿着与预定变形方向垂直的方向延伸的梁部分中的梁的宽度和在预定变形方向上设置在可动电极和固定电极之间的间隙的宽度大致相同。 因此，防止制造误差影响电容式动态量传感器的灵敏度。 例如，通过设计光束的宽度和长度上相同的间隙，允许±2.5％的制造公差误差。

公开(公告)号：US06672161B2

公开(公告)日：2004-01-06

申请号：US09901133

申请日：2001-07-10

申请人： Minekazu Sakai ,  Yoshiyuki Kato

发明人： Minekazu Sakai ,  Yoshiyuki Kato

IPC分类号： G01P15125

CPC分类号： G01P15/125 ,  B81B3/0051 ,  B81B2201/0235 ,  B81B2203/0136 ,  B81B2203/04 ,  G01P2015/0814

摘要： In a dynamic quantity sensor for detecting a dynamic quantity, a movable portion having comb-shaped movable electrodes is connected to a base portion through a beam portion as a spring portion, and moves in direction Y upon receiving dynamic quantity. Comb-shaped fixed electrodes are arranged opposite to the movable electrodes through detection intervals. A Q value of vibration of the movable portion in the direction Y is smaller than {fraction (1/500)} of a resonance frequency of the movable portion in the direction Y. Therefore, free vibration of the movable portion is rapidly damped so as not to adversely affect sensor output.

摘要翻译： 在用于检测动态量的动态量传感器中，具有梳形可动电极的可移动部分通过作为弹簧部分的梁部连接到基部，并且在接收到动态量时沿方向Y移动。 梳状固定电极通过检测间隔与可动电极相对布置。 可移动部分在方向Y上的振动的AQ值小于{分量（Y方向上的可移动部分的共振频率的1/500）。因此，可移动部分的自由振动被快速衰减，从而不会不利地 影响传感器输出。

公开(公告)号：US06525400B2

公开(公告)日：2003-02-25

申请号：US10078506

申请日：2002-02-21

申请人： Tetsuo Fujii ,  Minekazu Sakai ,  Akira Kuroyanagi

发明人： Tetsuo Fujii ,  Minekazu Sakai ,  Akira Kuroyanagi

IPC分类号： H01L2900

CPC分类号： H01L29/7883 ,  H01L21/28273

摘要： A gate oxide film is formed on a surface of a semiconductor substrate. A tunnel insulating film having a thickness smaller than that of the gate insulating film is formed in a portion thereof corresponding to a tunnel region. A first silicon film having a low impurity concentration is formed on the gate insulating film. A second silicon film having an impurity concentration higher than that of the first silicon film is formed on the first silicon film so as to be connected thereto. A third silicon film is formed on the second silicon film through an insulating film. The second and third silicon films are formed into floating and control gates, respectively, thereby forming a semiconductor memory device.

公开(公告)号：US06502462B2

公开(公告)日：2003-01-07

申请号：US09880778

申请日：2001-06-15

申请人： Minekazu Sakai

发明人： Minekazu Sakai

IPC分类号： G01P15125

CPC分类号： G01P15/125 ,  G01P2015/0814

摘要： In a capacitance type dynamic quantity sensor, a movable electrode is connected to a support substrate through a frame shaped displacement portion. The displacement portion is composed of first and second beams and a beam connection part connecting the first and second beams at ends thereof. The support substrate has electrode pads for wire bonding involving vibration. The first and second beams can perform flexural vibration at a natural frequency with the beam connection part working as a free end. The shape of the beam connection part is adjusted so that the natural frequency at the flexural vibration is different from that of the vibration applied by the wire bonding.

公开(公告)号：US06365458B1

公开(公告)日：2002-04-02

申请号：US09661572

申请日：2000-09-14

申请人： Tetsuo Fujii ,  Minekazu Sakai ,  Akira Kuroyanagi

发明人： Tetsuo Fujii ,  Minekazu Sakai ,  Akira Kuroyanagi

IPC分类号： H01L21336

CPC分类号： H01L27/11521 ,  H01L21/28273 ,  H01L27/115 ,  H01L27/11524 ,  H01L29/7883

摘要： A gate oxide film is formed on a surface of a semiconductor substrate. A tunnel insulating film having a thickness smaller than that of the gate insulating film is formed in a portion thereof corresponding to a tunnel region. A first silicon film having a low impurity concentration is formed on the gate insulating film. A second silicon film having an impurity concentration higher than that of the first silicon film is formed on the first silicon film so as to be connected thereto. A third silicon film is formed on the second silicon film through an insulating film. The second and third silicon films are formed into floating and control gates, respectively, thereby forming a semiconductor memory device.

摘要翻译： 在半导体衬底的表面上形成栅极氧化膜。 在对应于隧道区域的部分中形成厚度小于栅极绝缘膜厚度的隧道绝缘膜。 在栅极绝缘膜上形成杂质浓度低的第一硅膜。 在第一硅膜上形成杂质浓度高于第一硅膜的第二硅膜，以便与第一硅膜连接。 通过绝缘膜在第二硅膜上形成第三硅膜。 第二和第三硅膜分别形成浮动和控制栅极，从而形成半导体存储器件。

公开(公告)号：US5932921A

公开(公告)日：1999-08-03

申请号：US958319

申请日：1997-10-27

申请人： Minekazu Sakai ,  Inao Toyoda ,  Nobukazu Oba

发明人： Minekazu Sakai ,  Inao Toyoda ,  Nobukazu Oba

IPC分类号： G01L9/00 ,  H01L21/3063 ,  H01L29/84 ,  H01L29/82

CPC分类号： G01L9/0042 ,  H01L29/84

摘要： When a diaphragm portion of the pressure sensor or the like is fabricated, anisotropic etching is needed. This etching is carried out by electrochemically stopped etching. During this process, a voltage is applied to the diaphragm portion. A diode is connected between said diaphragm portion and an integrated circuit to prevent the voltage from being applied to the integrated circuit connected with the diaphragm portion. The diode is obtained by shorting the base and collector of a lateral p-n-p transistor to each other. A collector region is formed offset from immediately under a conductor pattern to prevent a parasitic MOS effect from producing a channel serving as a leakage current path. Further, a heavily doped n-type diffused region acting as a channel stopper is formed along the outer periphery of the collector region.

摘要翻译： 当制造压力传感器等的隔膜部分时，需要进行各向异性蚀刻。 该蚀刻通过电化学停止蚀刻进行。 在该过程中，向隔膜部分施加电压。 二极管连接在所述隔膜部分和集成电路之间，以防止电压施加到与隔膜部分连接的集成电路。 二极管通过将侧面p-n-p晶体管的基极和集电极彼此短接而获得。 集电极区域形成为从导体图案的正下方偏移，以防止寄生MOS效应产生用作漏电流路径的通道。 此外，沿集电区域的外周形成充当通道阻挡件的重掺杂n型扩散区域。