公开(公告)号：US5418680A

公开(公告)日：1995-05-23

申请号：US155655

申请日：1993-11-22

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/28 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/20 ,  H05F7/00

CPC分类号： H01L31/208 ,  H01L21/28 ,  H01L31/022466 ,  H01L31/03921 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： An apparatus for repairing a defective semiconductor device having an electrically short-circuited portion, wherein the semiconductor device includes a semiconductor thin film and a conductive thin film disposed in the named order on a conductive surface of a substrate and in which the conductive thin film and the conductive surface of the substrate are electrically short-circuited at a pinhole occurring in the semiconductor thin film to form an electrically short-circuited portion so that the semiconductor device is defective. The apparatus includes a substrate holding unit for holding the substrate of the defective semiconductor device and an electrode arranged above the substrate holding unit so that, when the defective semiconductor is positioned on the substrate holding unit, there is a predetermined distance between the electrode and the conductive thin film of the defective semiconductor device, the electrode being capable of moving in relation to the substrate of the defective semiconductor device. The apparatus further includes a voltage applying unit for applying a desired voltage to the electrode, wherein discharge is caused between the electrode and the conductive thin film of the defective semiconductor device by applying a desired voltage to the electrode through the voltage applying means to thereby modify a region of the conductive thin film of the defective semiconductor device in electrical contact with the conductive surface of the substrate of the defective semiconductor device.

摘要翻译： 一种用于修复具有电短路部分的有缺陷的半导体器件的装置，其中所述半导体器件包括半导体薄膜和导电薄膜，所述半导体薄膜和导电薄膜按照所述顺序设置在衬底的导电表面上，并且其中导电薄膜和 衬底的导电表面在发生在半导体薄膜中的针孔处电短路以形成电短路部分，使得半导体器件有缺陷。 该装置包括用于保持有缺陷的半导体器件的衬底的衬底保持单元和布置在衬底保持单元上方的电极，使得当缺陷半导体位于衬底保持单元上时，电极和 有缺陷的半导体器件的导电薄膜，电极能够相对于有缺陷的半导体器件的衬底移动。 该装置还包括用于向电极施加期望电压的电压施加单元，其中通过施加期望的电压通过电压施加装置在电极和缺陷半导体器件的导电薄膜之间引起放电，从而修改 所述有缺陷的半导体器件的导电薄膜的区域与有缺陷的半导体器件的衬底的导电表面电接触。

公开(公告)号：US5342452A

公开(公告)日：1994-08-30

申请号：US949692

申请日：1992-09-23

申请人： Keishi Saito ,  Tatsuyuki Aoike

发明人： Keishi Saito ,  Tatsuyuki Aoike

IPC分类号： H01L31/0224 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20

CPC分类号： H01L31/204 ,  H01L31/022466 ,  H01L31/075 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic device includes a conductive substrate, a semiconductor layer formed on the conductive substrate and made of a non-single-crystal semiconductor material containing at least silicon atoms, and a transparent electrode stacked on the semiconductor layer, wherein the transparent electrode is made of a conductive oxide containing carbon atoms, nitrogen atoms, or both and the carbon and/or nitrogen atoms are contained in larger quantities in the portion of the transparent electrode adjacent to the semiconductor layer.

摘要翻译： 光电器件包括导电衬底，形成在导电衬底上并由至少含有硅原子的非单晶半导体材料制成的半导体层和层叠在半导体层上的透明电极，其中透明电极由 在与半导体层相邻的透明电极的部分中含有碳原子，氮原子或二者的导电氧化物和碳原子和/或氮原子的数量较多。

公开(公告)号：US5284525A

公开(公告)日：1994-02-08

申请号：US806347

申请日：1991-12-13

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Kohda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Kohda

IPC分类号： H01L31/0236 ,  H01L31/0392 ,  H01L31/075

CPC分类号： H01L31/03921 ,  H01L31/0236 ,  H01L31/075 ,  Y02E10/548

摘要： A solar cell comprising a conductive substrate and semiconductor layers laminated on the conductive substrate, said laminate comprising a p-type layer composed of a non-single crystal Si material, an i-type layer serving as an active layer and an n-type layer, wherein a diamond layer having an uneven surface and containing a valence electron controlling agent is interposed between the conductive substrate and the semiconductor layers.

摘要翻译： 一种太阳能电池，包括导电基板和层叠在导电基板上的半导体层，所述层压体包括由非单晶Si材料构成的p型层，用作有源层的i型层和n型层 其中具有不平坦表面并含有价电子控制剂的金刚石层插入在导电基板和半导体层之间。

公开(公告)号：US5233664A

公开(公告)日：1993-08-03

申请号：US831800

申请日：1992-02-04

申请人： Hirofumi Yanagawa ,  Keishi Saito ,  Sumio Hagiwara

发明人： Hirofumi Yanagawa ,  Keishi Saito ,  Sumio Hagiwara

IPC分类号： H03H17/02 ,  H04R1/40 ,  H04R3/12

CPC分类号： H04R3/12 ,  H04R1/403 ,  H04R2430/20

摘要： A speaker system including a common input terminal for receiving an audio signal to be acoustically radiated; several speaker units; several digital filters connected between the common input terminal and the speaker units, and a filter coefficient for each of the digital filters. The speaker units are arranged linearly, in a matrix form or in a honeycomb form.

摘要翻译： 一种扬声器系统，包括用于接收要被声辐射的音频信号的公共输入端; 几个扬声器单元; 连接在公共输入端子和扬声器单元之间的几个数字滤波器，以及每个数字滤波器的滤波器系数。 扬声器单元以矩阵形式或蜂窝形式线性排列。

公开(公告)号：US4845001A

公开(公告)日：1989-07-04

申请号：US44022

申请日：1987-04-29

申请人： Tetsuya Takei ,  Keishi Saito ,  Tatsuyuki Aoike ,  Yasushi Fujioka

发明人： Tetsuya Takei ,  Keishi Saito ,  Tatsuyuki Aoike ,  Yasushi Fujioka

IPC分类号： G03G5/043 ,  G03G5/082 ,  G03G5/147

CPC分类号： G03G5/0825 ,  G03G5/0433 ,  G03G5/082 ,  G03G5/08235 ,  G03G5/14704

摘要： Improved light receiving members which are characterized by having an special surface layer formed of a non-monocrystalline material containing tetrahedrally bonded boron nitride or a non-monocrystalline material containing said boron nitride and trihedrally bonded boron nitride in mingled state or by having an especial surface layer constituted with a lower layer formed of a non-monocrystalline material containing tetrahedrally bonded boron nitride and an upper layer formed of a non-monocrystalline material containing tetrahedrally bonded boron nitride and trihedrally bonded boron nitride in mingled state. The improved light receiving members excel particularly in moisture resistance, repeating use characteristic, electrical voltage withstanding property environmental use characteristic and durability.And the improved light receiving member are particularly advantageous when used as an image-making member in electrophotography since they always exhibit substantially stable electric characteristics without depending upon the working circumstances, maintain a high photosensitivity and a high S/N ratio, do not invite any undesirable influence due to residual voltage even when used repeatedly for a long period of time, cause either defective image nor image flow and have a wealth of cleaning properties.

摘要翻译： 改进的光接收元件的特征在于具有由包含四面体键合的氮化硼的非单晶材料形成的特殊表面层，或者包含混合状态的含有氮化硼和三嵌段结合的氮化硼的非单晶材料，或通过具有特殊的表面层 由含有四面体键合的氮化硼的非单晶材料形成的下层和由包含四面体键合的氮化硼和三嵌段结合的氮化硼混合状态的非单晶材料形成的上层构成。 改进的光接收元件尤其在耐湿性，重复使用特性，耐电压性能环境使用特性和耐久性方面优异。 改进的光接收元件在用作电子照相术中的成像元件时特别有利，因为它们总是表现出基本稳定的电特性，而不依赖于工作环境，保持高的光敏性和高的S / N比，不邀请任何 即使反复使用长时间也会导致由于残留电压引起的不良影响，导致图像不良或图像流动，并具有丰富的清洁性能。

公开(公告)号：US4824749A

公开(公告)日：1989-04-25

申请号：US28777

申请日：1987-03-23

申请人： Shigeru Shirai ,  Keishi Saito ,  Takayoshi Arai ,  Minoru Kato ,  Yasushi Fujioka

发明人： Shigeru Shirai ,  Keishi Saito ,  Takayoshi Arai ,  Minoru Kato ,  Yasushi Fujioka

IPC分类号： G03G5/08 ,  G03G5/082 ,  G03G5/14

CPC分类号： G03G5/08242 ,  G03G5/08235 ,  G03G5/08278 ,  Y10S430/146

摘要： There are provided an improved light receiving member for use in electrophotography and a process for the production thereof. The light receiving member comprises a substrate usable for electrophotography and a light receiving layer constituted by a charge injection inhibition layer formed of an amorphous or polycrystalline material containing silicon atom as the main constituent and an element for controlling the conductivity, a photoconductive layer formed of an amorphous material containing silicon atom as the main constituent and at least one kind selected from hydrogen atom and halogen atom and a surface layer formed of a polycrystalline material containing silicon atom, carbon atom and hydrogen atom. The polycrystalline material is a polycrystalline material prepared by introducing a precursor capable of contributing to formation of the layer and an active species reactive with the precursor separately into a film deposition space and chemically reacting them.

摘要翻译： 提供了用于电子照相术的改进的光接收元件及其生产方法。 光接收部件包括可用于电子照相的基板和由含有硅原子作为主要成分的非晶或多晶材料形成的电荷注入阻挡层和用于控制导电性的元件构成的光接收层，由 含有硅原子作为主要成分的非晶质材料和选自氢原子和卤素原子的至少一种以及由含有硅原子，碳原子和氢原子的多晶材料形成的表面层。 多晶材料是通过将能够有助于形成层的前体和与前体反应的活性物质引入到膜沉积空间中并使其化学反应而制备的多晶材料。

公开(公告)号：US4798167A

公开(公告)日：1989-01-17

申请号：US44778

申请日：1987-05-01

申请人： Shunichi Ishihara ,  Keishi Saito ,  Shunri Oda ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Keishi Saito ,  Shunri Oda ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  H01L21/20 ,  H01L31/075 ,  H01L31/20 ,  C23C16/50

CPC分类号： H01L31/202 ,  H01L31/075 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S148/169

摘要： An apparatus for the preparation of a photoelectric conversion layer for a photoelectromotive force member includes:(a) a film-forming chamber having an inner space in which a substrate holder for a substrate is provided;(b) an exhaust pipe connected to the film-forming chamber and through a main valve to an exhaust pump;(c) a concentric triplicate conduit connected through a nozzle to the film-forming chamber. The concentric triplicate conduit includes:(i) an outer passage for introducing a gaseous raw material and formed by a circumferential wall and an inner wall having a plurality of gas liberation holes;(ii) a middle passage for applying microwave energy to said raw material gas to generate an active species and having a mixing region at the downstream side before the nozzle means, and(iii) a central passage situated horizontally within said middle passage (ii) for introducing a gaseous precursor and for transporting the gaseous precursor toward the film-forming chamber and being open at its end positioned in the mixing region leaving a desired distance to the nozzle means; said middle passage (ii) being formed by the inner wall of the outer passage and a circumferential wall of the central psssage (iii).Also included are:(d) a feed pipe for introducing said raw material to said outer passage (i);(e) a microwave power source for generating said microwave energy; and(f) a feed pipe for introducing said gaseous precursor to said central passage (iii).

摘要翻译： 一种用于制备光电动势部件的光电转换层的装置包括：（a）具有内部空间的成膜室，在该内部空间中设置有用于基板的基板保持器; （b）排气管，其连接到成膜室并通过主阀到排气泵; （c）通过喷嘴连接到成膜室的同心三重导管。 同心三重管道包括：（i）用于引入气态原料并由圆周壁形成的外部通道和具有多个气体释放孔的内壁; （ii）用于向所述原料气体施加微波能量以产生活性物质并且在喷嘴装置之前的下游侧具有混合区域的中间通道，以及（iii）水平地位于所述中间通道（ii）内的中心通道， 用于引入气态前体和用于将气态前驱体输送到成膜室，并且在其位于混合区域的端部处开口，留下到喷嘴装置的期望距离; 所述中间通道（ii）由所述外部通道的内壁和所述中央通道（iii）的周壁形成。 还包括：（d）用于将所述原料引入所述外通道（i）的进料管; （e）用于产生所述微波能量的微波功率源; 和（f）用于将所述气态前体引入所述中心通道（iii）的进料管。

公开(公告)号：US4689093A

公开(公告)日：1987-08-25

申请号：US843304

申请日：1986-03-24

申请人： Shunichi Ishihara ,  Keishi Saito ,  Shunri Oda ,  Isamu Shimizu

发明人： Shunichi Ishihara ,  Keishi Saito ,  Shunri Oda ,  Isamu Shimizu

IPC分类号： H01L31/04 ,  H01L21/20 ,  H01L31/075 ,  H01L31/20 ,  H01L21/205 ,  H01L31/18

CPC分类号： H01L31/202 ,  H01L31/075 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S148/169

摘要： Process for preparing a photoelectromotive force member by forming a photoelectric conversion layer on a substrate by: (a) generating an active species by the action of microwave energy on a substance in a space leading to a film forming space containing a substrate; (b) generating a precursor by the action of microwave energy on a substance in a space situated within the space for generating the active species; and (c) introducing the resulting active species and precursor into the film forming space to chemically react them and to form the photoelectric conversion layer.

摘要翻译： 通过以下步骤在基板上形成光电转换层来制备光电动势部件的方法：（a）通过微波能量作用于通向包含基板的成膜空间的空间中的物质产生活性物质; （b）通过微波能量作用于产生活性物质的空间内的物质的物质产生前体; 和（c）将所得到的活性物质和前体引入成膜空间以使其发生化学反应并形成光电转换层。

公开(公告)号：US4356455A

公开(公告)日：1982-10-26

申请号：US187891

申请日：1980-09-17

申请人： Akio Ozawa ,  Susumu Sueyoshi ,  Keishi Saito ,  Kikuo Ishikawa ,  Kiyomi Yatsuhashi ,  Satoshi Ishii ,  Masamichi Yumino

发明人： Akio Ozawa ,  Susumu Sueyoshi ,  Keishi Saito ,  Kikuo Ishikawa ,  Kiyomi Yatsuhashi ,  Satoshi Ishii ,  Masamichi Yumino

IPC分类号： H03F1/32 ,  H03F1/42 ,  H03F3/18 ,  H03F3/347 ,  H03F3/04

CPC分类号： H03F1/32 ,  H03F3/347

摘要： An amplifier circuit in which the non-linear distortion of the amplifier transistors caused by non-linear base-emitter input and output characteristics is eliminated without the use of negative feedback. A first transistor and a second transistor of opposite conductivity type are coupled with the output of the first transistor connected to the base of the second transistor and with an input signal applied to the base of the first transistor. Currents are applied to the first and second transistors, such as with the current mirror circuit, in such a manner that the ratio of the currents is a predetermined constant value. Bias voltages are applied to the circuit such that the ratio of the collector-emitter voltage of the first transistor to the collector-emitter voltage of the second transistor is the reciprocal of the predetermined constant value.

摘要翻译： 在不使用负反馈的情况下消除由非线性基极 - 发射极输入和输出特性引起的放大器晶体管的非线性失真的放大器电路。 具有相反导电类型的第一晶体管和第二晶体管与连接到第二晶体管的基极的第一晶体管的输出和施加到第一晶体管的基极的输入信号耦合。 电流通过电流镜电路施加到第一和第二晶体管，使得电流的比例是预定的常数值。 将偏置电压施加到电路，使得第一晶体管的集电极 - 发射极电压与第二晶体管的集电极 - 发射极电压之比为预定常数值的倒数。

公开(公告)号：US08997571B2

公开(公告)日：2015-04-07

申请号：US12999303

申请日：2009-06-17

申请人： Yasuhiro Someda ,  Keishi Saito ,  Yasufumi Asao ,  Katsumi Nakagawa ,  Shigeru Ichihara

发明人： Yasuhiro Someda ,  Keishi Saito ,  Yasufumi Asao ,  Katsumi Nakagawa ,  Shigeru Ichihara

IPC分类号： A61B5/05 ,  G01N23/02 ,  A61B8/14 ,  A61B5/00 ,  A61B8/08

CPC分类号： A61B8/4416 ,  A61B5/0035 ,  A61B5/0095 ,  A61B8/0825 ,  A61B8/14 ,  A61B8/145 ,  A61B8/4444 ,  A61B8/4494 ,  A61B8/483 ,  A61B8/5238

摘要： Provided are an ultrasonic probe capable of forming an image without degradation even when the frequency band of a photoacoustic wave and the frequency band of an ultrasonic wave used in ultrasonography are separated from each other, and an inspection object imaging apparatus including the ultrasonic probe. The ultrasonic probe includes a first array device capable of transmitting and receiving an ultrasonic wave; and a second array device capable of receiving a photoacoustic wave. The first array device includes plural electromechanical transducers arranged in a direction perpendicular to a scanning direction, the second array device includes plural electromechanical transducers arranged in a two-dimensional manner, and the first array device and the second array device are provided on the same plane and in the scanning direction.

摘要翻译： 即使在光声波的频带和超声波中使用的超声波的频带彼此分离的情况下，也能够形成图像而不劣化的超声波探头，以及包括超声波探头的检查对象成像装置。 超声波探头包括能够发送和接收超声波的第一阵列装置; 以及能够接收光声波的第二阵列装置。 第一阵列器件包括沿与扫描方向垂直的方向配置的多个机电换能器，第二阵列器件包括以二维方式布置的多个机电换能器，第一阵列器件和第二阵列器件设置在同一平面上 并沿扫描方向。