公开(公告)号：US5371380A

公开(公告)日：1994-12-06

申请号：US188731

申请日：1994-01-31

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/205 ,  H01L29/16 ,  H01L29/26 ,  H01L45/00

CPC分类号： H01L29/1604 ,  H01L21/02422 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/263

摘要： A non-single crystalline semiconductor containing at least one kind of atoms selected from the group consisting of silicon atoms (Si) and germanium atoms (Ge) as a matrix, and at least one kind of atoms selected from the group consisting of hydrogen atoms (H) and halogen atoms (X), wherein said non-single crystalline semiconductor has an average radius of 3.5 .ANG. or less and a density of 1.times.10.sup.19 (cm.sup.-3) or less as for microvoids contained therein. The non-single crystalline semiconductor excels in semiconductor characteristics and adhesion with other materials and are effectively usable as a constituent element of various semiconductor devices.

摘要翻译： 含有选自硅原子（Si）和锗原子（Ge）作为基体的至少一种原子的非单晶半导体，以及选自氢原子中的至少一种原子（ H）和卤素原子（X），其中所述非单晶半导体的平均半径为3.5AANG或更小，密度为1×1019（cm-3）或更小，对于其中包含的微孔。 非单晶半导体具有优异的半导体特性和与其他材料的粘合性，并且可以有效地用作各种半导体器件的组成元件。

公开(公告)号：US5281541A

公开(公告)日：1994-01-25

申请号：US755439

申请日：1991-09-05

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/28 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/20 ,  H01L21/306

CPC分类号： H01L31/208 ,  H01L21/28 ,  H01L31/022466 ,  H01L31/03921 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： A method for repairing a defective semiconductor device, the defective semiconductor device including a semiconductor thin film and a conductive thin film, disposed in the named order, on a conductive surface of a substrate, such that the conductive thin film and the conductive surface of the substrate are electrically short-circuited at a pinhole occurring in the semiconductor thin film to form an electrically short-circuited portion. The method includes the steps of applying desired a voltage through an electrode positioned above a surface of the defective semiconductor device, and moving the electrode along the surface of the defective semiconductor device while maintaining a distance between the electrode and the conductive thin film sufficient to allow a discharge to occur when the electrode is above the electrically short-circuited portion, such that the discharge modifies a region of the conductive thin film which is in electrical contact with the conductive surface of the substrate, to establish an electrically noncontacted state between the conductive thin film and the conductive surface of the substrate.

摘要翻译： 一种用于修复有缺陷的半导体器件的方法，所述有缺陷的半导体器件包括半导体薄膜和导电薄膜，其以所述的顺序设置在衬底的导电表面上，使得导电薄膜和导电薄膜的导电表面 衬底在半导体薄膜中出现的针孔处电短路以形成电短路部分。 该方法包括以下步骤：通过位于缺陷半导体器件的表面上方的电极施加所需的电压，并且沿着有缺陷的半导体器件的表面移动电极，同时保持电极和导电薄膜之间的距离足以允许 当电极在电气短路部分之上时，发生放电，使得放电改变与衬底的导电表面电接触的导电薄膜的区域，以在导电之间建立电非接触状态 薄膜和基板的导电表面。

公开(公告)号：US5418680A

公开(公告)日：1995-05-23

申请号：US155655

申请日：1993-11-22

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/28 ,  H01L31/0224 ,  H01L31/0392 ,  H01L31/20 ,  H05F7/00

CPC分类号： H01L31/208 ,  H01L21/28 ,  H01L31/022466 ,  H01L31/03921 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S136/29

摘要： An apparatus for repairing a defective semiconductor device having an electrically short-circuited portion, wherein the semiconductor device includes a semiconductor thin film and a conductive thin film disposed in the named order on a conductive surface of a substrate and in which the conductive thin film and the conductive surface of the substrate are electrically short-circuited at a pinhole occurring in the semiconductor thin film to form an electrically short-circuited portion so that the semiconductor device is defective. The apparatus includes a substrate holding unit for holding the substrate of the defective semiconductor device and an electrode arranged above the substrate holding unit so that, when the defective semiconductor is positioned on the substrate holding unit, there is a predetermined distance between the electrode and the conductive thin film of the defective semiconductor device, the electrode being capable of moving in relation to the substrate of the defective semiconductor device. The apparatus further includes a voltage applying unit for applying a desired voltage to the electrode, wherein discharge is caused between the electrode and the conductive thin film of the defective semiconductor device by applying a desired voltage to the electrode through the voltage applying means to thereby modify a region of the conductive thin film of the defective semiconductor device in electrical contact with the conductive surface of the substrate of the defective semiconductor device.

摘要翻译： 一种用于修复具有电短路部分的有缺陷的半导体器件的装置，其中所述半导体器件包括半导体薄膜和导电薄膜，所述半导体薄膜和导电薄膜按照所述顺序设置在衬底的导电表面上，并且其中导电薄膜和 衬底的导电表面在发生在半导体薄膜中的针孔处电短路以形成电短路部分，使得半导体器件有缺陷。 该装置包括用于保持有缺陷的半导体器件的衬底的衬底保持单元和布置在衬底保持单元上方的电极，使得当缺陷半导体位于衬底保持单元上时，电极和 有缺陷的半导体器件的导电薄膜，电极能够相对于有缺陷的半导体器件的衬底移动。 该装置还包括用于向电极施加期望电压的电压施加单元，其中通过施加期望的电压通过电压施加装置在电极和缺陷半导体器件的导电薄膜之间引起放电，从而修改 所述有缺陷的半导体器件的导电薄膜的区域与有缺陷的半导体器件的衬底的导电表面电接触。

公开(公告)号：US5362684A

公开(公告)日：1994-11-08

申请号：US840537

申请日：1992-02-25

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/205 ,  H01L29/78 ,  H01L29/786 ,  H01L31/04 ,  H01L31/08 ,  H01L31/10 ,  H01L31/20

CPC分类号： H01L31/204 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S438/931

摘要： A non-monocrystalline silicon carbide semiconductor comprises carbon atoms, silicon atoms, and at least one of hydrogen atoms and halogen atoms, the non-monocrystalline silicon carbide semiconductor having therein microvoids with an average radius of not more than 3.5.ANG. at a microvoid density of not more than 1.times.10.sup.19 cm.sup.-3.

摘要翻译： 非单晶碳化硅半导体包含碳原子，硅原子和氢原子和卤素原子中的至少一个，非单晶碳化硅半导体具有微孔密度为平均半径不超过3.5的微孔 不超过1×1019 cm-3。

公开(公告)号：US5510631A

公开(公告)日：1996-04-23

申请号：US289258

申请日：1994-08-11

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Toshimitsu Kariya ,  Yuzo Koda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Toshimitsu Kariya ,  Yuzo Koda

IPC分类号： H01L21/205 ,  H01L29/78 ,  H01L29/786 ,  H01L31/04 ,  H01L31/08 ,  H01L31/10 ,  H01L31/20 ,  H01L31/0312 ,  H01L29/76 ,  H01L31/06

CPC分类号： H01L31/204 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S438/931

摘要： A non-monocrystalline silicon carbide semiconductor comprises carbon atoms, silicon atoms, and at least one of hydrogen atoms and halogen atoms, the non-monocrystalline silicon carbide semiconductor having therein microvoids with an average radius of not more than 3.5 .ANG. at a microvoid density of not more than 1.times.10.sup.19 cm.sup.-3.

摘要翻译： 非单晶碳化硅半导体包含碳原子，硅原子和氢原子和卤素原子中的至少一个，非单晶碳化硅半导体具有微孔密度为平均半径不超过3.5的微孔 不超过1×1019 cm-3。

公开(公告)号：US5284525A

公开(公告)日：1994-02-08

申请号：US806347

申请日：1991-12-13

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Kohda

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Yasushi Fujioka ,  Mitsuyuki Niwa ,  Toshimitsu Kariya ,  Yuzo Kohda

IPC分类号： H01L31/0236 ,  H01L31/0392 ,  H01L31/075

CPC分类号： H01L31/03921 ,  H01L31/0236 ,  H01L31/075 ,  Y02E10/548

摘要： A solar cell comprising a conductive substrate and semiconductor layers laminated on the conductive substrate, said laminate comprising a p-type layer composed of a non-single crystal Si material, an i-type layer serving as an active layer and an n-type layer, wherein a diamond layer having an uneven surface and containing a valence electron controlling agent is interposed between the conductive substrate and the semiconductor layers.

摘要翻译： 一种太阳能电池，包括导电基板和层叠在导电基板上的半导体层，所述层压体包括由非单晶Si材料构成的p型层，用作有源层的i型层和n型层 其中具有不平坦表面并含有价电子控制剂的金刚石层插入在导电基板和半导体层之间。

公开(公告)号：US5429685A

公开(公告)日：1995-07-04

申请号：US150813

申请日：1993-11-12

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Ryo Hayashi ,  Masahiko Tonogaki

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Ryo Hayashi ,  Masahiko Tonogaki

IPC分类号： H01L31/0392 ,  H01L31/052 ,  H01L31/065 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0376 ,  H01L31/0384

CPC分类号： H01L31/065 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S136/293

摘要： The present invention provides a photovoltaic element in which the open-circuit voltage and the path length of holes are improved by preventing the recombination of photoexcited carriers.The p-i-n junction type photovoltaic element is composed of a p-type layer, an i-type layer of a laminated structure consisting of an i-type layer formed by RF plasma CVD on the p-type layer side and an i-type layer formed by microwave (.mu.W) CVD on the n-type layer side, or an i-type layer formed by microwave (.mu.W) plasma CVD on the p-type layer side and an i-type layer formed by RF plasma CVD on the n-type layer side, characterized in that the i-type layer formed by .mu.W plasma CVD is formed by a process in which a lower .mu.W energy and a higher RF energy than the .mu.W energy needed to decompose 100% of the source gas are simultaneously applied to a source gas containing Si and Ge at a pressure of 50 mTorr or less, such that the minimum value of the bandgap is shifted toward the p-type layer side, away from the center of the i-type layer, and the i-type layer formed by RF plasma CVD is formed 30 nm thick or less by using a source gas containing a silicon-containing gas at a deposition rate of 2 nm/sec or less.

摘要翻译： 本发明提供一种光电元件，其中通过防止光激发载流子的复合，提高了开路电压和空穴的路径长度。 pin结型光电元件由p型层，由p型层侧的RF等离子体CVD形成的i型层构成的层叠结构的i型层和形成为i型层的i型层构成 通过在n型层侧的微波（μW）CVD或在p型层侧由微波（μW）等离子体CVD形成的i型层和通过RF等离子体CVD形成的i型层 n型层侧，其特征在于，通过以下步骤形成由μW等离子体CVD形成的i型层，其中相比于分解100％的源所需的μW能量较低的μW能量和较高的RF能量 在50mTorr以下的压力下将气体同时施加到含有Si和Ge的源气体，使得带隙的最小值朝着p型层侧偏离i型层的中心， 通过使用含有含硅气体的源气体，通过RF等离子体CVD形成的i型层形成为30nm以下 速度为2nm / sec以下。

公开(公告)号：US5563075A

公开(公告)日：1996-10-08

申请号：US458098

申请日：1995-06-01

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Ryo Hayashi ,  Masahiko Tonogaki

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Ryo Hayashi ,  Masahiko Tonogaki

IPC分类号： H01L31/0392 ,  H01L31/052 ,  H01L31/065 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20

CPC分类号： H01L31/065 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S136/293

摘要： A non-monocrystalline silicon semiconductor device having a pin junction is formed by forming a first doped semiconductor layer of a first conductivity disposed on a substrate. A first intrinsic layer is deposited on the first doped semiconductor layer employing RF energy. A second intrinsic layer is deposited on the first intrinsic layer employing microwave energy and RF energy simultaneously. A semiconductor precursor gas, including germanium and a semiconductor precursor gas including silicon are supplied to the second intrinsic layer during its formation. The content of the semiconductor precursor gas containing germanium is greater than the semiconductor gas including silicon in the layer thickness direction in the second intrinsic layer at a P-layer side. A second doped semiconductor layer is deposited on the second intrinsic layer.

摘要翻译： 具有pin结的非单晶硅半导体器件通过形成布置在衬底上的第一导电性的第一掺杂半导体层而形成。 使用RF能量将第一本征层沉积在第一掺杂半导体层上。 使用微波能量和RF能量同时沉积在第一本征层上的第二本征层。 包括锗和包含硅的半导体前体气体的半导体前体气体在其形成期间被提供给第二本征层。 包含锗的半导体前体气体的含量比在P层侧的第二本征层中的层厚度方向上包括硅的半导体气体的含量大。 第二掺杂半导体层沉积在第二本征层上。

公开(公告)号：US5563425A

公开(公告)日：1996-10-08

申请号：US149749

申请日：1993-11-10

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Ryo Hayashi ,  Masahiko Tonogaki

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Ryo Hayashi ,  Masahiko Tonogaki

IPC分类号： H01L31/04 ,  H01L31/052 ,  H01L31/075 ,  H01L31/20 ,  H01L29/04 ,  H01L31/36 ,  H01L31/376

CPC分类号： H01L31/065 ,  H01L31/056 ,  H01L31/075 ,  H01L31/204 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521

摘要： An object of the present invention is to provide a photoelectrical conversion device in which recombination of carriers excited by light is prevented and the open voltage and the carrier range of positive holes are improved and to provide a generating system using the photoelectrical conversion device. The photoelectrical conversion device includes a p-layer, an i-layer, and an n-layer, wherein the photoelectrical conversion device being formed by stacking the p-layer, the i-layer and the n-layer each of which is made of non-single-crystal silicon semiconductor, the i-layer contains germanium atoms, the band gap of the i-layer is smoothly changed in a direction of the thickness of the i-layer, the minimum value of the band gap is positioned adjacent to the p-layer from the central position of the i-layer and both of a valence control agent to serve as a donor and another valence control agent to serve as an acceptor are doped into the i-layer. Further, at least either of the p-layer or the n-layer is formed into a stacked structure consisting of a layer mainly composed of group III elements of the periodic table and/or group V elements of the same and a layer containing the valence control agent and mainly composed of silicon atoms.

摘要翻译： 本发明的目的是提供一种光电转换装置，其中防止由光激发的载流子的复合，并且改善了空穴的开路电压和载流子范围，并提供了使用光电转换装置的发电系统。 所述光电转换装置包括p层，i层和n层，其中所述光电转换装置通过层叠p层，i层和n层而形成，所述p层，i层和n层由 非单晶硅半导体，i层含有锗原子，i层的带隙在i层的厚度方向上平滑地变化，带隙的最小值位于 i层的中心位置的p层和作为供体的价电子控制剂以及用作受体的另一价电子控制剂都掺杂到i层中。 此外，p层或n层中的至少任一层形成为由主要由周期表的III族元素和/或其V族元素组成的层和包含该价电子层的层 控制剂主要由硅原子组成。

公开(公告)号：US5439533A

公开(公告)日：1995-08-08

申请号：US337195

申请日：1994-11-07

申请人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

发明人： Keishi Saito ,  Jinsho Matsuyama ,  Toshimitsu Kariya ,  Koichi Matsuda ,  Yuzo Koda ,  Naoto Okada

IPC分类号： H01L31/04 ,  H01L31/0392 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/18

CPC分类号： H01L31/03921 ,  H01L31/075 ,  H01L31/076 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S136/293

摘要： An object of the present invention is to provide a photovoltaic device and a method of producing the photovoltaic device which can prevent recombination of photo-excited carriers and which permits increases in the open circuit voltage and the carrier range. The photovoltaic device of the present invention has a laminate structure composed of at least a p-type layer of a silicon non-single crystal semiconductor, a photoactive layer having a plurality of i-type layers, and an n-type layer. The photoactive layer has a laminate structure composed of a first i-type layer deposited on the side of the n-type layer by a microwave plasma CVD process, and a second i-type layer deposited on the side of said the p-type layer by an RF plasma CVD process. The first i-type layer deposited by the microwave plasma CVD process contains at least silicon and carbon atoms, and has a minimum band gap between the center thereof and the p-type layer, and the second i-type layer deposited by the RF plasma CVD process contains at least silicon atoms and has a thickness of 30 nm or less.

摘要翻译： 本发明的目的是提供一种能够防止光激发载流子复合并且允许开路电压和载流子范围增加的光电器件及其制造方法。 本发明的光电器件具有至少由非硅单晶半导体的p型层，具有多个i型层的光活性层和n型层构成的层叠结构。 光敏层具有由微波等离子体CVD工艺在n型层侧沉积的第一i型层和沉积在所述p型层侧的第二i型层构成的层叠结构 通过RF等离子体CVD工艺。 通过微波等离子体CVD法沉积的第一i型层至少包含硅和碳原子，并且在其中心和p型层之间具有最小的带隙，并且由RF等离子体沉积的第二i型层 CVD工艺至少含有硅原子，其厚度为30nm以下。