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18 条记录 (耗时 0.029 秒)

    Photovoltaic element
    6.
    发明授权
    Photovoltaic element 失效
    光伏元件

    公开(公告)号：US06162988A

    公开(公告)日：2000-12-19

    申请号：US923259

    申请日：1997-09-04

    申请人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

    发明人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

    IPC分类号： G03G5/08 ,  C23C16/50 ,  C23C16/511 ,  H01L21/205 ,  H01L31/04 ,  H01L31/075 ,  H01L31/076 ,  H01L31/20 ,  H01L31/00

    CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

    摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.

    摘要翻译： 本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和 微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。 因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并且具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法 以及用于连续批量生产该装置的装置。

    Method of manufacturing photovoltaic element and apparatus therefor
    8.
    发明授权
    Method of manufacturing photovoltaic element and apparatus therefor 有权
    制造光伏元件的方法及其设备

    公开(公告)号：US06368944B1

    公开(公告)日：2002-04-09

    申请号：US09664219

    申请日：2000-09-18

    申请人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

    发明人： Shotaro Okabe ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda ,  Tadashi Hori ,  Takahiro Yajima

    IPC分类号： H01L2120

    CPC分类号： H01L31/076 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

    摘要： The photovoltaic element of the present invention is a photovoltaic element comprised of a semiconductor-junctioned element, characterized in that the element includes a first electrically conductive type semiconductor layer, a non-crystalline i type semiconductor layer, a microcrystalline i type semiconductor layer and a microcrystalline second electrically conductive type semiconductor layer and is pin-junctioned, and a method of and an apparatus for manufacturing the same are characterized by efficiently and continuously mass-producing the photovoltaic element having an excellent current-voltage characteristic and excellent photoelectric conversion efficiency. Thereby, there are provided a photovoltaic element in which the junction interface between the non-crystalline i type layer and the microcrystalline electrically conductive type layer has good grating consistency and which has an excellent current-voltage characteristic and excellent photoelectric conversion efficiency, and a method of and an apparatus for continuously mass-producing the same.

    摘要翻译： 本发明的光电元件是由半导体结合元件构成的光电元件，其特征在于，所述元件包括第一导电型半导体层，非晶i型半导体层，微晶i型半导体层和 微结晶第二导电型半导体层，并且是引脚连接的，其制造方法及其制造方法的特征在于有效且连续地批量生产具有优异的电流 - 电压特性和优异的光电转换效率的光电元件。 因此，提供了一种光电元件，其中非晶i型层和微晶导电型层之间的结界面具有良好的光栅一致性，并且具有优异的电流 - 电压特性和优异的光电转换效率，以及一种方法 以及用于连续批量生产该装置的装置。

    Plasma processing apparatus and plasma processing method
    9.
    发明授权
    Plasma processing apparatus and plasma processing method 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US06313430B1

    公开(公告)日：2001-11-06

    申请号：US09258208

    申请日：1999-02-26

    申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda

    发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda

    IPC分类号： B23K906

    CPC分类号： B23K1/206 ,  B23K2101/40

    摘要： A high frequency plasma processing apparatus and a high frequency plasma processing method according to the invention can suitably be used for uniformly forming on a substrate a deposition film over a large area. The apparatus and the related method solve the problem wherein high frequency power supplied to a known plasma processing apparatus can become distorted to produce harmonics and give rise to difficulty in correctly reading the incident and reflected powers and realizing an accurate matching when a VHF is used in order to raise the processing rate.

    摘要翻译： 根据本发明的高频等离子体处理装置和高频等离子体处理方法可以适用于在大面积上在基板上均匀地形成沉积膜。 该装置和相关方法解决了提供给已知等离子体处理装置的高频功率可能变得失真以产生谐波并导致难以正确读取入射和反射功率并且当使用VHF时实现精确匹配的问题 以提高加工率。

    Process for manufacturing semiconductor element using non-monocrystalline semiconductor layers of first and second conductivity types and amorphous and microcrystalline I-type semiconductor layers
    10.
    发明授权
    Process for manufacturing semiconductor element using non-monocrystalline semiconductor layers of first and second conductivity types and amorphous and microcrystalline I-type semiconductor layers 失效

    公开(公告)号：US06271055B1

    公开(公告)日：2001-08-07

    申请号：US09038708

    申请日：1998-03-09

    申请人： Takahiro Yajima ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda

    发明人： Takahiro Yajima ,  Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hirokazu Ohtoshi ,  Akira Sakai ,  Tadashi Sawayama ,  Yuzo Kohda

    IPC分类号： H01L2100

    CPC分类号： H01L31/202 ,  H01L31/1055 ,  Y02E10/50 ,  Y02P70/521

    摘要： A process for forming a deposited film, a process for manufacturing a semiconductor element and a process for manufacturing a photoelectric conversion element are disclosed which each comprises a step of forming a first conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on a substrate, a step of forming a substantially i-type semiconductor layer comprising an amorphous semiconductor on the first conductivity type semiconductor layer, a step of forming a substantially i-type semiconductor layer comprising a microcrystalline semiconductor on the substantially i-type semiconductor layer comprising the amorphous semiconductor while decreasing the film forming rate thereof and a step of forming a second conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on the substantially i-type semiconductor layer comprising the microcrystalline semiconductor. Further, a process for forming a deposited film, a process for manufacturing a semiconductor element and a process for manufacturing a photoelectric conversion element are disclosed which each comprises a step of forming a first conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on a substrate, a step of forming a substantially i-type semiconductor layer comprising an amorphous semiconductor on the first conductivity type semiconductor layer, a step of forming a substantially i-type semiconductor layer comprising a microcrystalline semiconductor on the substantially i-type semiconductor layer comprising the amorphous semiconductor and a step of forming a second conductivity type semiconductor layer comprising a non-monocrystalline semiconductor on the substantially i-type semiconductor layer comprising the microcrystalline semiconductor while increasing the film forming rate thereof. Thereby, a photoelectric conversion element having a high photoelectric conversion efficiency can be obtained with a high productivity.