摘要:
Disclosed is a fabricating system including a plurality of processing apparatuses connected to each other by means of an inter-apparatus transporter, wherein one group of semiconductor wafers are processed in processing apparatuses and other group of wafers are transported to specified processing apparatuses for a time interval from (To+T) to a time To; and another group of wafers are processed and the remaining group of wafers are transported for a time interval from (To+T) to (To+2T). Since processing apparatuses can receive at least one of works from the inter-apparatus transporter for a time interval T min, the distribution of works from the transporter to processing apparatuses is completed for the time interval T min. The transporter is emptied for each time interval T min, and works are unloaded to the emptied transporter, which makes easy the scheduling, control and management of the transporting of a plurality of works in the fabricating system. Moreover, since the fabricating system including processing apparatuses is periodically controlled at a cycle time T min, the scheduling of a plurality of works can be made easy, to enhance the level of optimization, thus improving the productivity.
摘要:
An alignment method or an exposure method in an exposure process in which a first stepper having a first reduction magnification and a second stepper having a second reduction magnification, higher than the first reduction magnification, are used in combination. For a global alignment through the first stepper on the basis of alignment marks having been defined through the second stepper in relation to shots thereof, in every shot of the first stepper the position of such alignment mark or marks to be measured is made variable with respect to the shot center.
摘要:
A semiconductor device comprising a semiconductor crystalline substrate having projections each thereof having an area of 0.01 .mu.m.sup.2 to 4 .mu.m.sup.2 or stripe projections each thereof having a width of 0.01 .mu.m to 1 .mu.m and semiconductor crystalline layers formed on the projections, each of the layers having lattice constants different from those of the semiconductor crystalline substrate preferably by 0.5% or more. The semiconductor device is free of dislocations and thermally stable. The semiconductor device can be fabricated by performing such processes as forming projections on the substrate and forming semiconductor crystalline layers on the projections by molecular beam epitaxy.
摘要:
A transistor having a high carrier mobility and suited for a high-speed operation can be formed by utilizing a fact that the carrier mobility in a strained germanium layer is large. A strain control layer is provided beneath the germanium layer to impose a compressive strain on the germanium layer, and the composition of the strain control layer in a predetermined range is used to generate the compressive strain surely.
摘要:
An apparatus usable with an object having a surface with a pattern, for examining the state of the surface, includes a projecting system for directing a light beam to the surface of the object, and a collecting system for collecting scattered light from the surface of the object. A projection of the optical axis of the collecting system onto the surface of the object extends in a direction different from a projection onto the surface of the object of a major portion of light diffracted from the pattern. A light-receiving unit receives the scattered light as collected by the collecting system and for producing an output corresponding to the state of the surface of the object.
摘要:
An ultrasonic flowmeter apparatus, which can be mounted on a conduit flowing a fluid whose flow rate is to be measured, has two housing halves coupled swingably about an axis. Free ends of the housing halves include a clamp mechanism for closing and locking the halves in position. The halves have formed therein grooves 1a and 2a, respectively, and a pair of ultrasonic wave transmission and reception elements are provided on an inner wall of the groove 1a. When the conduit is clamped between the grooves, the conduit is urged against the inner walls and deformed into a substantially square cross sectional configuration. An ultrasonic wave beam B is projected from one of the elements into a fluid passing through the conduit, the beam is reflected by an opposite surface of the conduit urged against the groove 2a, and the reflected beam is received by the other element.
摘要:
In a semiconductor integrated circuit device having plural layers of buried wirings, it is intended to prevent the occurrence of a discontinuity caused by stress migration at an interface between a plug connected at a bottom thereof to a buried wiring and the buried wiring. For example, in the case where the width of a first Cu wiring is not smaller than about 0.9 μm and is smaller than about 1.44 μm, and the width of a second Cu wiring and the diameter of a plug are about 0.18 μm, there are arranged two or more plugs which connect the first wirings and the second Cu wirings electrically with each other.
摘要:
In a semiconductor integrated circuit device having plural layers of buried wirings, it is intended to prevent the occurrence of a discontinuity caused by stress migration at an interface between a plug connected at a bottom thereof to a buried wiring and the buried wiring. For example, in the case where the width of a first Cu wiring is not smaller than about 0.9 μm and is smaller than about 1.44 μm, and the width of a second Cu wiring and the diameter of a plug are about 0.18 μm, there are arranged two or more plugs which connect the first wirings and the second Cu wirings electrically with each other.
摘要:
A fabricating method for a system including a plurality of processing apparatuses connected to each other by an inter-apparatus transporter. The semiconductor waters are processed in the processing apparatuses and are transported to specified processing apparatuses in different time interval that are set to N times a unit time interval. Since the fabricating system includes processing apparatuses and an inter-apparatus transporter that are periodically controlled at time intervals related to a unit time, intervals related to a unit time, the scheduling of a plurality of works can be made efficiently to enhance the level of optimization, thus improving the productivity.
摘要:
A fabricating method for a system including a plurality of processing apparatuses connected to each other by an inter-apparatus transporter. The semiconductor waters are processed in the processing apparatuses and are transported to specified processing apparatuses in different time interval that are set to N times a unit time interval. Since the fabricating system includes processing apparatuses and an inter-apparatus transporter that are periodically controlled at time intervals related to a unit time, intervals related to a unit time, the scheduling of a plurality of works can be made efficiently to enhance the level of optimization, thus improving the productivity.