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公开(公告)号:US20200228155A1
公开(公告)日:2020-07-16
申请号:US16830661
申请日:2020-03-26
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Syunsuke KIDO
Abstract: A high frequency filter includes series arm resonators and parallel arm resonators as acoustic wave resonators and at least one inductor, wherein capacitive components of the acoustic wave resonators constitute an LPF and an HPF as hybrid filters with an inductor or with an inductor and a capacitor, and the at least one inductor includes inductors as mount component inductors.
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公开(公告)号:US20200052675A1
公开(公告)日:2020-02-13
申请号:US16658211
申请日:2019-10-21
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Tomio KANAZAWA , Hiroshi SHIMIZU , Syunsuke KIDO , Ryo NAKAGAWA
Abstract: An acoustic wave device includes an interdigital transducer electrode provided on a piezoelectric substrate, the interdigital transducer electrode includes first and second electrode fingers. The second electrode fingers are connected to an electric potential different from that of the first electrode fingers. A direction orthogonal or substantially orthogonal to a direction in which the first electrode fingers and the second electrode fingers extend is an acoustic wave propagation direction, the interdigital transducer electrode includes a first area centrally provided in the acoustic wave propagation direction, second areas provided on one side and another side of the first area in the acoustic wave propagation direction, and third areas each provided on a side of each of the second areas opposite to the first area in the acoustic wave propagation direction.
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公开(公告)号:US20200014370A1
公开(公告)日:2020-01-09
申请号:US16574249
申请日:2019-09-18
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Hiroshi MATSUBARA , Masanori KATO , Syunsuke KIDO
Abstract: A hybrid multiplexer includes a filter configured to allow a high-frequency signal of an HB to pass therethrough, and a filter configured to allow a high-frequency signal of an MB to pass therethrough, in which the filter includes a matching circuit, a first resonance circuit defined by one of an LPF and an HPF, and a second resonance circuit defined by the other of the LPF and the HPF, the LPF includes an inductor and a parallel arm resonator, the HPF includes a serial arm resonator and an inductor, and a resonant frequency of the parallel arm resonator and an anti-resonant frequency of the serial arm resonator are both located between a frequency at a low-band end of the HB and a frequency at a high-band end of the HB.
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公开(公告)号:US20170331449A1
公开(公告)日:2017-11-16
申请号:US15666596
申请日:2017-08-02
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Munehisa WATANABE , Hideki IWAMOTO , Hajime KANDO , Syunsuke KIDO
IPC: H03H9/02 , H03H9/54 , H01L41/04 , H01L41/047 , H03H3/08 , H03H3/04 , H03H3/02 , H01L41/22 , H01L41/18 , H03H3/10
CPC classification number: H03H9/0222 , H01L41/04 , H01L41/047 , H01L41/0477 , H01L41/18 , H01L41/22 , H03H3/02 , H03H3/04 , H03H3/08 , H03H3/10 , H03H9/02574 , H03H9/02834 , H03H9/54 , H03H2003/023 , H03H2003/027 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
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公开(公告)号:US20140152145A1
公开(公告)日:2014-06-05
申请号:US13900743
申请日:2013-05-23
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Hajime KANDO , Syunsuke KIDO , Keiji OKADA , Munehisa WATANABE
CPC classification number: H03H9/25 , H03H3/02 , H03H3/08 , H03H9/02228 , H03H9/02559 , H03H9/02574 , H03H9/02834 , Y10T29/42
Abstract: An elastic wave device includes a support layer with a through-hole or a recess opened at an upper surface thereof, a piezoelectric thin film arranged on the support layer to extend above the recess or the through-hole of the support layer, and an IDT electrode defined on at least one of upper and lower surfaces of the piezoelectric thin film in a region of the piezoelectric thin film, the region extending above the recess, or the through-hole. A secondary mode of a plate wave, which contains a U1 component as a main component, is utilized. The piezoelectric thin film is made of LiTaO3, and Euler angles (φ, θ, ψ) of the LiTaO3 fall within specific ranges.
Abstract translation: 弹性波装置包括:具有通孔或在其上表面开口的凹部的支撑层,布置在支撑层上以在支撑层的凹部或通孔上方延伸的压电薄膜,以及IDT 在所述压电薄膜的区域中的所述压电薄膜的上表面和下表面中的至少一个上限定的电极,所述凹部上方延伸的区域或所述通孔。 使用包含U1部件作为主要部件的平板波的次级模式。 压电薄膜由LiTaO3制成,LiTaO3的欧拉角(&phgr; as;ψ)落在特定范围内。
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公开(公告)号:US20130285768A1
公开(公告)日:2013-10-31
申请号:US13920492
申请日:2013-06-18
Applicant: Murata Manufacturing Co., Ltd.
Inventor: Munehisa WATANABE , Hideki IWAMOTO , Hajime KANDO , Syunsuke KIDO
IPC: H03H9/54
CPC classification number: H03H9/0222 , H01L41/04 , H01L41/047 , H01L41/0477 , H01L41/18 , H01L41/22 , H03H3/02 , H03H3/04 , H03H3/08 , H03H3/10 , H03H9/02574 , H03H9/02834 , H03H9/54 , H03H2003/023 , H03H2003/027 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
Abstract: An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
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