公开(公告)号：US5726837A

公开(公告)日：1998-03-10

申请号：US328090

申请日：1994-10-24

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magnetoresistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件至少在相对的磁性层上形成端子， 使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US5719729A

公开(公告)日：1998-02-17

申请号：US990769

申请日：1992-12-15

申请人： Naoki Koyama ,  Yoshihiro Hamakawa ,  Isamu Yuitoo ,  Kanji Kawakami ,  Kazuo Shiiki ,  Masahiro Kitada

发明人： Naoki Koyama ,  Yoshihiro Hamakawa ,  Isamu Yuitoo ,  Kanji Kawakami ,  Kazuo Shiiki ,  Masahiro Kitada

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/265

CPC分类号： G11B5/3967

摘要： In an inductive-write, magnetoresistive-read type magnetic head having a magnetoresistive read head and an inductive write head superimposed on each other, the magnetic center of the read head is made more coincident with the physical center of the write head by a changing of a magnetization direction of a magnetoresistive element. The recording/reproducing apparatus using this magnetic head can thus have a good S/N ratio even if the track width is narrow.

摘要翻译： 在具有叠加在一起的磁阻读取头和感应写入头的感应写入磁阻读取型磁头中，通过改变读写头的磁中心使写头的磁心与记录头的物理中心更一致 磁阻元件的磁化方向。 因此，即使磁道宽度窄，使用该磁头的记录/再现装置也可以具有良好的S / N比。

公开(公告)号：US5390061A

公开(公告)日：1995-02-14

申请号：US710775

申请日：1991-06-05

申请人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

发明人： Ryoichi Nakatani ,  Masahiro Kitada ,  Naoki Koyama ,  Isamu Yuito ,  Hisashi Takano ,  Eijin Moriwaki ,  Mikio Suzuki ,  Masaaki Futamoto ,  Fumio Kugiya ,  Yoshibumi Matsuda ,  Kazuo Shiiki ,  Yoshinori Miyamura ,  Kyo Akagi ,  Takeshi Nakao ,  Hirotsugu Fukuoka ,  Takayuki Munemoto ,  Tokuho Takagaki ,  Toshio Kobayashi ,  Hideo Tanabe ,  Noboru Shimizu

IPC分类号： G01R33/09 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/33

CPC分类号： G11B5/398 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3967 ,  H01F10/324 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  G11B2005/0002 ,  G11B2005/0016 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49155

摘要： The magnetoresistance effect element is of a multilayered structure having at least magnetic layers and an intermediate layer of an insulating material, a semiconductor or an antiferromagnetic material against the magnetic layers, and the magneto-resistance effect element has terminals formed at least on the opposite magnetic layers, respectively, so that a current flows in the intermediate layer. The film surfaces of all the magnetic layers constituting the magnetoresistance effect element are opposed substantially at right angles to the recording surface of a magnetic recording medium. Therefore, the area of the magnetic layers facing the recording surface of the magnetic recording medium can be extremely reduced, and thus the magnetic field from a very narrow region of the high-density recorded magnetic recording medium can be detected by the current which has a tunneling characteristic and passes through the intermediate layer.

摘要翻译： 磁阻效应元件是至少具有磁性层和抵抗磁性层的绝缘材料，半导体或反铁磁材料的中间层的多层结构，并且磁阻效应元件具有至少形成在相对的磁体上的端子 层，使得电流在中间层中流动。 构成磁阻效应元件的所有磁性层的膜表面基本上与磁记录介质的记录表面成直角相对。 因此，能够极大地降低与磁记录介质的记录面对置的磁性层的面积，因此能够通过电流检测来自高密度记录磁记录介质的非常窄的区域的磁场 穿透特性，穿过中间层。

公开(公告)号：US5287237A

公开(公告)日：1994-02-15

申请号：US668069

申请日：1991-03-12

申请人： Masahiro Kitada ,  Noboru Shimizu ,  Hideo Tanabe ,  Ryoichi Nakatani ,  Isamu Yuito ,  Naoki Koyama

发明人： Masahiro Kitada ,  Noboru Shimizu ,  Hideo Tanabe ,  Ryoichi Nakatani ,  Isamu Yuito ,  Naoki Koyama

IPC分类号： G01R33/09 ,  G11B5/31 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/30 ,  B32B15/00 ,  G11B5/147

CPC分类号： B82Y25/00 ,  G01R33/09 ,  G11B5/3113 ,  G11B5/3903 ,  G11B5/3967 ,  H01F10/002 ,  H01F10/3218 ,  H01L43/08 ,  G11B5/3163 ,  Y10T428/1107 ,  Y10T428/12861

摘要： In order to prevent generation of Barkhausen noise of a magnetoresistance-effect element, a thin antiferromagnetic film formed of Fe-Mn-X alloy containing a third alloying element X (which serves to improve corrosion resistance of Fe-Mn alloy) by 0.1 to 20 atomic % is disposed in adjacent to a thin permalloy film. The element X is selected from the group consisting of Ir, Ru, Zr, Nb, Si, Ge, V, Co, Pt and Pd. It is particularly recommended to employ Ir of 4 to 15 atomic % or Ru of 5.5 to 15 atomic % as the element X. When one or more alloying element selected from Ru, Rh, Pt, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Ni, Cu, Al, Si and Ge is added to Fe and Mn which are essential components of the Fe-Mn-X alloy in addition to the element X, corrosion resistance of the alloy is improved more sufficiently.

摘要翻译： 为了防止产生具有磁阻效应元件的巴克豪森噪声，由含有第三合金元素X（用于提高Fe-Mn合金的耐腐蚀性）的Fe-Mn-X合金形成的薄的反铁磁性膜为0.1〜20 原子％设置在薄坡坡合金膜附近。 元素X选自Ir，Ru，Zr，Nb，Si，Ge，V，Co，Pt和Pd。 特别推荐使用4〜15原子％的Ir或5.5〜15原子％的Ru作为元素X.当选自Ru，Rh，Pt，Ti，Zr，Hf，V，Nb中的一种或多种合金元素时， 除了元素X之外，还添加了作为Fe-Mn-X合金的必要成分的Fe和Mn中的Ta，Cr，Mo，W，Ni，Cu，Al，Si和Ge，合金的耐腐蚀性提高 充分地。

公开(公告)号：US5212609A

公开(公告)日：1993-05-18

申请号：US792630

申请日：1991-11-15

申请人： Isamu Yuito ,  Makoto Morijiri ,  Tooru Takeura ,  Naoki Koyama ,  Masahiro Kitada

发明人： Isamu Yuito ,  Makoto Morijiri ,  Tooru Takeura ,  Naoki Koyama ,  Masahiro Kitada

IPC分类号： G11B5/39

CPC分类号： G11B5/3903 ,  Y10T29/49052

摘要： A magnetoresistive head is disclosed. It comprises a lower gap film, a magnetoresistive film, a bias film, an electrode, an upper gap film, and upper shield film provided in sequence on a substrate. A protective film is provided under the upper shield film to prevent the upper gap film and electrode from the undesirable etching during patterning the upper shield film.

摘要翻译： 公开了一种磁阻头。 它包括依次设置在基板上的下间隙膜，磁阻膜，偏置膜，电极，上间隙膜和上屏蔽膜。 在上屏蔽膜下方设置有保护膜，以防止在上屏蔽膜图案化期间上间隙膜和电极不期望的蚀刻。

公开(公告)号：US5126907A

公开(公告)日：1992-06-30

申请号：US525666

申请日：1990-05-21

申请人： Yoshihiro Hamakawa ,  Isamu Yuito ,  Hisashi Takano ,  Naoki Koyama ,  Eijin Moriwaki ,  Shinobu Sasaki ,  Kazuo Shiiki

发明人： Yoshihiro Hamakawa ,  Isamu Yuito ,  Hisashi Takano ,  Naoki Koyama ,  Eijin Moriwaki ,  Shinobu Sasaki ,  Kazuo Shiiki

IPC分类号： G11B5/31

CPC分类号： G11B5/3153 ,  G11B5/3113

摘要： A thin film magnetic head has a first magnetic core member carried by a substrate, a gap layer formed on the first magnetic core member, and a second magnetic core member formed in a spaced relation with the first magnetic core member. The second magnetic core member is coupled to the first magnetic core member to form a magnetic path and to have an end portion of the gap layer sandwiched by gap defining portions of the first and second magnetic core members. A coil conductor is wound about the magnetic path. In one embodiment, the first magnetic core member includes a first magnetic layer made of a magnetic material having stable magnetic properties during heat treatment and the second magnetic core member includes a second magnetic layer made of a material having a saturation flux density higher than that of the material of the first magnetic core member.

摘要翻译： 薄膜磁头具有由基板承载的第一磁芯构件，形成在第一磁芯构件上的间隙层和与第一磁芯构件间隔开地形成的第二磁芯构件。 第二磁芯部件耦合到第一磁芯部件以形成磁路，并且间隙层的端部夹在第一和第二磁芯部件的间隙限定部分之间。 线圈导体缠绕在磁路上。 在一个实施例中，第一磁芯构件包括由在热处理期间具有稳定磁特性的磁性材料制成的第一磁性层，第二磁芯构件包括由饱和磁通密度高于 第一磁芯构件的材料。