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公开(公告)号：US08283607B2
公开(公告)日：2012-10-09
申请号：US12100179
申请日：2008-04-09
CPC分类号： H01L21/67115 , H01L21/67248
摘要： Methods and apparatus for processing substrates and measuring the temperature using radiation pyrometry are disclosed. A reflective layer is provided on a window of a processing chamber. A radiation source providing radiation in a first range of wavelengths heats the substrate, the substrate being transparent to radiation in a second range of wavelengths within the first range of wavelengths for a predetermined temperature range. Radiation within the second range of wavelength is reflected by the reflective layer.
摘要翻译： 公开了用于处理衬底和使用辐射测温法测量温度的方法和装置。 反射层设置在处理室的窗口上。 提供在第一波长范围内的辐射的辐射源加热衬底，所述衬底对于处于预定温度范围的第一波长范围内的第二波长范围内的辐射是透明的。 在第二波长范围内的辐射被反射层反射。
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42.发明授权Temperature measurement and control of wafer support in thermal processing chamber 有权热处理室中晶片支架的温度测量和控制公开(公告)号：US07860379B2
公开(公告)日：2010-12-28
申请号：US11623238
申请日：2007-01-15
CPC分类号： H01L21/67248 , H01L21/67115
摘要： The present invention provides apparatus and methods for achieving uniform heating to a substrate during a rapid thermal process. More particularly, the present invention provides apparatus and methods for controlling the temperature of an edge ring supporting a substrate during a rapid thermal process to improve temperature uniformity across the substrate.
摘要翻译： 本发明提供了用于在快速热处理期间实现对衬底的均匀加热的装置和方法。 更具体地，本发明提供了用于在快速热处理期间控制支撑衬底的边缘环的温度的装置和方法，以改善穿过衬底的温度均匀性。
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公开(公告)号：US20090298300A1
公开(公告)日：2009-12-03
申请号：US12437257
申请日：2009-05-07
IPC分类号： H01L21/324 , H01L21/67
CPC分类号： H01L21/324 , H01L21/67115 , H01L21/67248
摘要： Methods and apparatus for hyperbaric rapid thermal processing of a substrate are described. Methods of processing a substrate in a rapid thermal processing chamber are described that include passing a substrate from outside the chamber through an access port onto a support in the interior region of the processing chamber, closing a port door sealing the chamber, pressurizing the chamber to a pressure greater than 1.5 atmospheres absolute and directing radiant energy toward the substrate. Hyperbaric rapid thermal processing chambers are described which are constructed to withstand pressures greater than at least about 1.5 atmospheres absolute or, optionally, 2 atmospheres of absolute pressure. Processing chambers may include pressure control valves to control the pressure within the chamber.
摘要翻译： 描述了用于衬底高压快速热处理的方法和装置。 描述了在快速热处理室中处理基板的方法，其包括将基板从室外通过进入端口传送到处理室的内部区域中的支撑件上，关闭密封该室的端口门，将该室加压至 绝对压力大于1.5个大气压，并将辐射能量引向基板。 描述了高压快速热处理室，其被构造为承受大于至少约1.5大气压绝对压力或任选地大气压绝压的压力。 处理室可以包括压力控制阀，以控制室内的压力。
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公开(公告)号：US20090212037A1
公开(公告)日：2009-08-27
申请号：US12036078
申请日：2008-02-22
IPC分类号： F27D11/00
CPC分类号： H01L21/324 , H01L21/67017 , H01L21/67098 , H01L21/67115
摘要： A silver reflector for reflecting radiation from a lamp in a semiconductor processing chamber is disclosed. The reflector may be a sleeve to be disposed in a lightpipe or part of a lamphead. The silver may be in the form of a coating on the sleeve or the lamphead.
摘要翻译： 公开了一种用于在半导体处理室中反射来自灯的辐射的银反射器。 反射器可以是套筒以设置在光管或灯头的一部分中。 银可以是套筒或灯头上的涂层形式。
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公开(公告)号：US20090120924A1
公开(公告)日：2009-05-14
申请号：US12203696
申请日：2008-09-03
申请人： STEPHEN MOFFATT , Joseph M. Ranish
发明人： STEPHEN MOFFATT , Joseph M. Ranish
IPC分类号： F27D11/00
CPC分类号： H01L21/324 , B23K26/0626 , B23K26/352 , B23K2101/40 , H01L21/02667 , H01L21/26506 , H01L21/2658 , H01L21/268 , H01L21/2686 , H01L21/67115 , H01L29/66575
摘要： The present invention generally describes apparatuses and methods used to perform an annealing process on desired regions of a substrate. In one embodiment, pulses of electromagnetic energy are delivered to a substrate using a flash lamp or laser apparatus. The pulses may be from about 1 nsec to about 10 msec long, and each pulse has less energy than that required to melt the substrate material. The interval between pulses is generally long enough to allow the energy imparted by each pulse to dissipate completely. Thus, each pulse completes a micro-anneal cycle. The pulses may be delivered to the entire substrate at once, or to portions of the substrate at a time. Further embodiments provide an apparatus for powering a radiation assembly, and apparatuses for detecting the effect of pulses on a substrate.
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公开(公告)号：US20080199163A1
公开(公告)日：2008-08-21
申请号：US11675150
申请日：2007-02-15
申请人： Joseph M. Ranish , Khurshed Sorabji
发明人： Joseph M. Ranish , Khurshed Sorabji
IPC分类号： H05B3/00
CPC分类号： H01K1/28 , H01K1/22 , H01K1/32 , H01K1/325 , H01K1/46 , H01K1/58 , H01K7/00 , H01L21/67115 , H05B3/0047
摘要： A lamp assembly for the lamp assembly adapted for use in a substrate thermal processing chamber to heat the substrate to temperatures up to at least about 1100° C. is disclosed. In one embodiment, the lamp assembly comprises a bulb enclosing at least one radiation generating filament attached to a pair of leads, the bulb having an inner surface and an outer surface, a lamp base configured to receive the pair of leads and at least a portion of the bulb having a surface treatment adapted to reflect light away from the lamp base. In another embodiment, a sleeve covers the lamp base, which has a cross-sectional area less than about 1.2 times the cross-sectional area of the bulb.
摘要翻译： 公开了一种用于灯组件的灯组件，其适用于衬底热处理室以将衬底加热至高达至少约1100℃的温度。 在一个实施例中，灯组件包括灯泡，其包围附接到一对引线的至少一个辐射生成细丝，灯泡具有内表面和外表面，灯基座被配置为接收一对引线和至少一部分 具有适于将光反射离开灯座的表面处理的灯泡。 在另一个实施例中，套筒覆盖灯座，其具有小于灯泡横截面面积的约1.2倍的横截面面积。
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47.发明申请公开(公告)号：US20080169282A1
公开(公告)日：2008-07-17
申请号：US12055045
申请日：2008-03-25
申请人： KHURSHED SORABJI , Alexander N. Lerner , Joseph M. Ranish , Aaron M. Hunter , Bruce Adams , Mehran Behdjat , Rajesh S. Ramanujam
发明人： KHURSHED SORABJI , Alexander N. Lerner , Joseph M. Ranish , Aaron M. Hunter , Bruce Adams , Mehran Behdjat , Rajesh S. Ramanujam
CPC分类号： H01L21/67109 , H01L21/67115 , H01L21/67248
摘要： Apparatus and methods for achieving uniform heating or cooling of a substrate during a rapid thermal process are disclosed. More particularly, apparatus and methods for controlling the temperature of an edge ring supporting a substrate and/or a reflector plate during a rapid thermal process to improve temperature uniformity across the substrate are disclosed, which include a thermal mass or plate adjacent the edge ring to heat or cool the edge ring.
摘要翻译： 公开了用于在快速热处理期间实现基板均匀加热或冷却的装置和方法。 更具体地，公开了用于在快速热处理期间控制支撑衬底和/或反射板的边缘环的温度以改善衬底上的温度均匀性的装置和方法，其包括邻近边缘环到 加热或冷却边缘环。
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48.发明授权Thermal flux laser annealing for ion implantation of semiconductor P-N junctions 有权半导体P-N结离子注入的热通量激光退火公开(公告)号：US07135392B1
公开(公告)日：2006-11-14
申请号：US11185651
申请日：2005-07-20
IPC分类号： H01L21/42
CPC分类号： H01L21/268 , B23K26/0604 , B23K26/0676 , B23K26/0738 , B23K2101/40 , G02B6/4206 , G02B6/4218 , G02B27/0994 , H01L21/67115 , H01S5/4012 , H01S5/405
摘要： A method for forming P-N junctions in a semiconductor wafer includes ion implanting dopant impurities into the wafer and annealing the wafer using a thermal flux laser annealing apparatus that includes an array of semiconductor laser emitters arranged in plural parallel rows extending along a slow axis, plural respective cylindrical lenses overlying respective ones of the rows of laser emitters for collimating light from the respective rows along a fast axis generally perpendicular to the slow axis, a homogenizing light pipe having an input face at a first end for receiving light from the plural cylindrical lenses and an output face at an opposite end, the light pipe comprising a pair of reflective walls extending between the input and output faces and separated from one another along the direction of the slow axis, and scanning apparatus for scanning light emitted from the homogenizing light pipe across the wafer in a scanning direction parallel to the fast axis.
摘要翻译： 一种用于在半导体晶片中形成PN结的方法包括将晶体中的掺杂杂质离子注入到晶片中并使用热通量激光退火装置退火晶片，所述热通量激光退火装置包括沿着慢轴延伸的多个平行的排列的半导体激光发射器阵列， 圆柱形透镜，覆盖相应行的激光发射器，用于沿着大致垂直于慢轴的快轴校准来自各行的光;均质光管，其具有在第一端处的输入面，用于接收来自多个柱面透镜的光;以及 在相对端的输出面，所述光管包括在所述输入和输出面之间延伸并且沿着所述慢轴的方向彼此分离的一对反射壁，以及用于扫描从均匀化光管发射的光的扫描装置 该晶片在平行于快轴的扫描方向上。
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公开(公告)号：US06805466B1
公开(公告)日：2004-10-19
申请号：US09595765
申请日：2000-06-16
申请人： Joseph M. Ranish
发明人： Joseph M. Ranish
IPC分类号： F21V700
CPC分类号： H01L21/67115
摘要： A lamphead includes a monolithic member. A plurality of lamp receptacles and reflector cavities are formed in the monolithic member.
摘要翻译： 灯头包括整体构件。 多个灯座和反射器腔形成在整体构件中。
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50.发明授权
公开(公告)号：US5389853A
公开(公告)日：1995-02-14
申请号：US955382
申请日：1992-10-01
摘要： The invention refers to a filament having improved emission of visible light. The emissivity of a tungsten filament is improved by depositing a layer of submicron-to-micron crystallites on the filament, the layer having substantially submicron spacing between crystallites. The crystallites being formed from tungsten or a tungsten alloy of up to 1 weight percent thorium, up to 10 weight percent of at least one of rhenium, tantalum, or niobium, and the balance substantially tungsten.
摘要翻译： 本发明涉及具有改善的可见光发射的灯丝。 通过在细丝上沉积亚微米至微米的微晶层来提高钨丝的发射率，该层在微晶之间具有基本上亚微米的间隔。 微晶由钨或钨合金形成，最高达1重量％的钍，至多10重量％的铼，钽或铌中的至少一种，余量基本上为钨。
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