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公开(公告)号：US08367983B2
公开(公告)日：2013-02-05
申请号：US12483770
申请日：2009-06-12
CPC分类号： H01L21/67115
摘要： Methods and apparatus for processing substrates and measuring the temperature using radiation pyrometry are disclosed. A reflective layer is provided on a window of a processing chamber. A radiation source providing radiation in a first range of wavelengths heats the substrate, the substrate being transparent to radiation in a second range of wavelengths within the first range of wavelengths for a predetermined temperature range. Radiation within the second range of wavelength is reflected by the reflective layer.
摘要翻译： 公开了用于处理衬底和使用辐射测温法测量温度的方法和装置。 反射层设置在处理室的窗口上。 提供在第一波长范围内的辐射的辐射源加热衬底，所述衬底对于处于预定温度范围的第一波长范围内的第二波长范围内的辐射是透明的。 在第二波长范围内的辐射被反射层反射。
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公开(公告)号：US08314371B2
公开(公告)日：2012-11-20
申请号：US12611958
申请日：2009-11-04
申请人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
发明人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
IPC分类号： H01B1/00
CPC分类号： H01L21/67259 , C23C16/46 , H01L21/324 , H01L21/67115 , H01L21/68 , H01L21/681 , H01L21/6835 , H01L21/68742
摘要： Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.
摘要翻译： 描述了包括将衬底轴向对准衬底支撑件或经验确定的位置的用于快速热处理平面衬底的方法和装置。 所述方法和装置包括确定衬底和衬底支撑件的相对取向的传感器系统。
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公开(公告)号：US20090289053A1
公开(公告)日：2009-11-26
申请号：US12483770
申请日：2009-06-12
CPC分类号： H01L21/67115
摘要： Methods and apparatus for processing substrates and measuring the temperature using radiation pyrometry are disclosed. A reflective layer is provided on a window of a processing chamber. A radiation source providing radiation in a first range of wavelengths heats the substrate, the substrate being transparent to radiation in a second range of wavelengths within the first range of wavelengths for a predetermined temperature range. Radiation within the second range of wavelength is reflected by the reflective layer.
摘要翻译： 公开了用于处理衬底和使用辐射测温法测量温度的方法和装置。 反射层设置在处理室的窗口上。 提供在第一波长范围内的辐射的辐射源加热衬底，所述衬底对于处于预定温度范围的第一波长范围内的第二波长范围内的辐射是透明的。 在第二波长范围内的辐射被反射层反射。
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公开(公告)号：US08283607B2
公开(公告)日：2012-10-09
申请号：US12100179
申请日：2008-04-09
CPC分类号： H01L21/67115 , H01L21/67248
摘要： Methods and apparatus for processing substrates and measuring the temperature using radiation pyrometry are disclosed. A reflective layer is provided on a window of a processing chamber. A radiation source providing radiation in a first range of wavelengths heats the substrate, the substrate being transparent to radiation in a second range of wavelengths within the first range of wavelengths for a predetermined temperature range. Radiation within the second range of wavelength is reflected by the reflective layer.
摘要翻译： 公开了用于处理衬底和使用辐射测温法测量温度的方法和装置。 反射层设置在处理室的窗口上。 提供在第一波长范围内的辐射的辐射源加热衬底，所述衬底对于处于预定温度范围的第一波长范围内的第二波长范围内的辐射是透明的。 在第二波长范围内的辐射被反射层反射。
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公开(公告)号：US20130043632A1
公开(公告)日：2013-02-21
申请号：US13656150
申请日：2012-10-19
申请人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lemer , Nir Merry
发明人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lemer , Nir Merry
IPC分类号： B23Q1/25
CPC分类号： H01L21/67259 , C23C16/46 , H01L21/324 , H01L21/67115 , H01L21/68 , H01L21/681 , H01L21/6835 , H01L21/68742
摘要： Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.
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公开(公告)号：US20130043235A1
公开(公告)日：2013-02-21
申请号：US13656158
申请日：2012-10-19
申请人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
发明人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunter , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
IPC分类号： F27D11/00
CPC分类号： H01L21/67259 , C23C16/46 , H01L21/324 , H01L21/67115 , H01L21/68 , H01L21/681 , H01L21/6835 , H01L21/68742
摘要： Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.
摘要翻译： 描述了包括将衬底轴向对准衬底支撑件或经验确定的位置的用于快速热处理平面衬底的方法和装置。 所述方法和装置包括确定衬底和衬底支撑件的相对取向的传感器系统。
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公开(公告)号：US20090255921A1
公开(公告)日：2009-10-15
申请号：US12100179
申请日：2008-04-09
CPC分类号： H01L21/67115 , H01L21/67248
摘要： Methods and apparatus for processing substrates and measuring the temperature using radiation pyrometry are disclosed. A reflective layer is provided on a window of a processing chamber. A radiation source providing radiation in a first range of wavelengths heats the substrate, the substrate being transparent to radiation in a second range of wavelengths within the first range of wavelengths for a predetermined temperature range. Radiation within the second range of wavelength is reflected by the reflective layer.
摘要翻译： 公开了用于处理衬底和使用辐射测温法测量温度的方法和装置。 反射层设置在处理室的窗口上。 提供在第一波长范围内的辐射的辐射源加热衬底，所述衬底对于处于预定温度范围的第一波长范围内的第二波长范围内的辐射是透明的。 在第二波长范围内的辐射被反射层反射。
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公开(公告)号：US20120070136A1
公开(公告)日：2012-03-22
申请号：US13184895
申请日：2011-07-18
IPC分类号： F27D11/12
CPC分类号： H01L21/67115 , F27B5/06 , F27B5/14 , F27B5/18 , F27D11/02 , F27D2019/0003 , H01L21/67011 , H01L21/67248
摘要： The present invention generally relates to methods and apparatus for processing substrates. Embodiments of the invention include apparatuses for processing a substrate comprising a ceramic reflector plate, which may be optically transparent. The reflector plate may include a reflective coating and be part of a reflector plate assembly in which the reflector plate is assembled to a baseplate.
摘要翻译： 本发明一般涉及用于处理衬底的方法和装置。 本发明的实施例包括用于处理包括可以是光学透明的陶瓷反射板的基板的装置。 反射板可以包括反射涂层，并且是反射板组件的一部分，其中反射板组装到基板上。
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公开(公告)号：US09449858B2
公开(公告)日：2016-09-20
申请号：US13184895
申请日：2011-07-18
CPC分类号： H01L21/67115 , F27B5/06 , F27B5/14 , F27B5/18 , F27D11/02 , F27D2019/0003 , H01L21/67011 , H01L21/67248
摘要： The present invention generally relates to methods and apparatus for processing substrates. Embodiments of the invention include apparatuses for processing a substrate comprising a ceramic reflector plate, which may be optically transparent. The reflector plate may include a reflective coating and be part of a reflector plate assembly in which the reflector plate is assembled to a baseplate.
摘要翻译： 本发明一般涉及用于处理衬底的方法和装置。 本发明的实施例包括用于处理包括可以是光学透明的陶瓷反射板的基板的装置。 反射板可以包括反射涂层，并且是反射板组件的一部分，其中反射板组装到基板上。
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公开(公告)号：US20110065276A1
公开(公告)日：2011-03-17
申请号：US12720942
申请日：2010-03-10
申请人： Udayan Ganguly , Joseph M. Ranish , Aaron M. Hunter , Jing Tang , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Wei Liu , Johanes F. Swenberg , Shiyu Sun
发明人： Udayan Ganguly , Joseph M. Ranish , Aaron M. Hunter , Jing Tang , Christopher S. Olsen , Matthew D. Scotney-Castle , Vicky Nguyen , Swaminathan Srinivasan , Wei Liu , Johanes F. Swenberg , Shiyu Sun
IPC分类号： H01L21/311 , H01L21/3065
CPC分类号： H01L21/76232 , H01L21/0223 , H01L21/67109 , H01L21/67115 , H01L21/67167 , H01L21/6719 , H01L21/67207 , H01L21/68785 , H01L27/11521
摘要： Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
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