公开(公告)号：US07033758B2

公开(公告)日：2006-04-25

申请号：US09872493

申请日：2001-06-01

申请人： Daryn Kenny ,  Lu Ping Shen ,  Vincent P. Antao ,  Audrey N. Player ,  Wei Cao

发明人： Daryn Kenny ,  Lu Ping Shen ,  Vincent P. Antao ,  Audrey N. Player ,  Wei Cao

IPC分类号： C12Q1/68 ,  C07H21/04

CPC分类号： C12Q1/682 ,  C12Q1/6841 ,  C12Q2523/313

摘要： Methods are provided for highly sensitive and rapid in situ detection of a nucleic acid analyte of a known sequence. The method employs oligonucleotide probes in a series of optimized steps to amplify a signal and decrease background. Sensitivity is enhanced such that the method can detect as few as 1–2 copies of nucleic acid analyte per sample, the sample containing a cell, tissue or similar biological material. Methods of detecting and identifying the position of the nucleic acid analyte in a cell are also provided.

公开(公告)号：US20060019494A1

公开(公告)日：2006-01-26

申请号：US11231386

申请日：2005-09-21

申请人： Wei Cao ,  Hua Chung ,  Vincent Ku ,  Ling Chen

发明人： Wei Cao ,  Hua Chung ,  Vincent Ku ,  Ling Chen

IPC分类号： H01L21/44

CPC分类号： C23C16/4408 ,  C23C16/045 ,  C23C16/34 ,  C23C16/45557 ,  H01L21/28562

摘要： Embodiments of the invention provide a method for forming tantalum nitride materials on a substrate by employing an atomic layer deposition (ALD) process. The method includes heating a tantalum precursor within an ampoule to a predetermined temperature to form a tantalum precursor gas and sequentially exposing a substrate to the tantalum precursor gas and a nitrogen precursor to form a tantalum nitride material. Thereafter, a nucleation layer and a bulk layer may be deposited on the substrate. In one example, a radical nitrogen compound may be formed from the nitrogen precursor during a plasma-enhanced ALD process. A nitrogen precursor may include nitrogen or ammonia. In another example, a metal-organic tantalum precursor may be used during the deposition process.

公开(公告)号：US06660622B2

公开(公告)日：2003-12-09

申请号：US10290746

申请日：2002-11-07

申请人： Ling Chen ,  Seshadri Ganguli ,  Wei Cao ,  Christophe Marcadal

发明人： Ling Chen ,  Seshadri Ganguli ,  Wei Cao ,  Christophe Marcadal

IPC分类号： H01L213205

CPC分类号： H01L21/76844 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76865

摘要： A method of forming barrier layers in a via hole extending through an inter-level dielectric layer and including a preformed first barrier coated onto the bottom and sidewalls of the via holes. In a single plasma sputter reactor, a first step sputters the wafer rather than the target with high energy ions to remove the barrier layer from the bottom of the via but not from the sidewalls and a second step sputter deposits a second barrier layer, for example of Ta/TaN, onto the via bottom and sidewalls. The two steps may be differentiated by power applied to the target, by chamber pressure, or by wafer bias. The second step may include the simultaneous removal of the first barrier layer from the via bottom and sputter deposition of the second barrier layer onto the via sidewalls.

摘要翻译： 在穿过层间电介质层的通孔中形成阻挡层的方法，包括涂覆在通孔的底部和侧壁上的预先形成的第一屏障。 在单个等离子体溅射反应器中，第一步骤以高能离子将晶片而不是目标物喷射，以从通孔的底部除去阻挡层，而不是从侧壁排出，第二步骤溅射沉积第二阻挡层，例如 的Ta / TaN，通过底部和侧壁。 这两个步骤可以通过施加到靶，通过室压力或通过晶片偏置的功率来区分。 第二步骤可以包括从通孔底部同时移除第一阻挡层并将第二阻挡层溅射到通孔侧壁上。

公开(公告)号：US06607976B2

公开(公告)日：2003-08-19

申请号：US09964108

申请日：2001-09-25

申请人： Ling Chen ,  Seshadri Ganguli ,  Christophe Marcadal ,  Wei Cao ,  Roderick C. Mosely ,  Mei Chang

发明人： Ling Chen ,  Seshadri Ganguli ,  Christophe Marcadal ,  Wei Cao ,  Roderick C. Mosely ,  Mei Chang

IPC分类号： H01L214763

CPC分类号： H01L21/76843 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/76876 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for forming a tungsten-containing copper interconnect barrier layer (e.g., a tungsten [W] or tungsten-nitride [WXN] copper interconnect barrier layer) on a substrate with a high (e.g., greater than 30%) sidewall step coverage and ample adhesion to underlying dielectric layers. The method includes first depositing a thin titanium-nitride (TiN) or tantalum nitride (TaN) nucleation layer on the substrate, followed by the formation of a tungsten-containing copper interconnect barrier layer (e.g., a W or WXN copper interconnect barrier layer) overlying the substrate. The tungsten-containing copper interconnect barrier layer can, for example, be formed using a Chemical Vapor Deposition (CVD) technique that employs a fluorine-free tungsten-containing gas (e.g., tungsten hexacarbonyl [W(CO)6]) or a WF6-based Atomic Layer Deposition (ALD) technique. The presence of a thin TiN (or TaN) nucleation layer facilitates the formation of a tungsten-containing copper interconnect barrier layer with a sidewall step coverage of greater than 30% and ample adhesion to dielectric layers. A copper interconnect barrier layer structure includes a thin titanium-nitride (TiN) (or tantalum nitride [TaN]) nucleation layer disposed directly on the dielectric substrate (e.g., a single or dual-damascene copper interconnect dielectric substrate). The copper interconnect barrier layer structure also includes a tungsten-containing copper interconnect barrier layer (e.g., a W or WXN copper interconnect barrier layer) formed on the thin TiN (or TaN) nucleation layer using, for example, a CVD technique that employs a fluorine-free tungsten-containing gas (e.g., [W(CO)6]) or a WF6-based ALD technique.

摘要翻译： 在具有高（例如，大于30％）侧壁台阶覆盖的基板上形成含钨铜互连势垒层（例如，钨[W]或氮化钨[WXN]铜互连势垒层）的方法，以及 充足的粘附到底层电介质层。 该方法包括首先在衬底上沉积薄的氮化钛（TiN）或氮化钽（TaN）成核层，随后形成含钨的铜互连屏障层（例如W或WXN铜互连阻挡层） 覆盖基板。 含钨铜互连阻挡层例如可以使用使用无氟含钨气体（例如六羰基钨[W（CO）6]）或WF 6的化学气相沉积（CVD）技术来形成 的原子层沉积（ALD）技术。 薄TiN（或TaN）成核层的存在有助于形成具有大于30％的侧壁台阶覆盖率和对电介质层的充分粘合性的含钨铜互连屏障层。 铜互连势垒层结构包括直接设置在电介质基板（例如，单镶嵌铜互连电介质基板）上的薄氮化钛（TiN）（或氮化钽[TaN]）成核层。 铜互连阻挡层结构还包括使用例如CVD技术在薄TiN（或TaN）成核层上形成的含钨铜互连势垒层（例如，W或WXN铜互连势垒层），其采用 无氟含钨气体（例如[W（CO）6]）或基于WF6的ALD技术。

公开(公告)号：US06498091B1

公开(公告)日：2002-12-24

申请号：US09704161

申请日：2000-11-01

申请人： Ling Chen ,  Seshadri Ganguli ,  Wei Cao ,  Christophe Marcadal

发明人： Ling Chen ,  Seshadri Ganguli ,  Wei Cao ,  Christophe Marcadal

IPC分类号： H01L214763

CPC分类号： H01L21/76844 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76865

摘要： A method and resultant structure of forming barrier layers in a via hole extending through an inter-level dielectric layer. A first barrier layer of TiSiN is conformally coated by chemical vapor deposition onto the bottom and sidewalls of the via holes and in the field area on top of the dielectric layer. A single plasma sputter reactor is used to perform two steps. In the first step, the wafer rather than the target is sputtered with high energy ions to remove the barrier layer from the bottom of the via but not from the sidewalls. In the second step, a second barrier layer, for example of Ta/TaN, is sputter deposited onto the via bottom and sidewalls. The two steps may be differentiated by power applied to the target, by chamber pressure, or by wafer bias. The second step may include the simultaneous removal of the first barrier layer from the via bottom and sputter deposition of the second barrier layer onto the via sidewalls. Chamber conditions in the first step, including balancing neutrals and ions, may be controlled to remove the first barrier layer from the via bottom while leaving it on the more exposed the field area.

摘要翻译： 在延伸穿过层间电介质层的通孔中形成势垒层的方法和结果。 TiSiN的第一阻挡层通过化学气相沉积保形地涂覆在通孔的底部和侧壁以及介电层顶部的场区中。 使用单个等离子体溅射反应器执行两个步骤。 在第一步骤中，用高能离子溅射晶片而不是靶，以从通孔的底部除去阻挡层，而不是从侧壁去除阻挡层。 在第二步骤中，例如Ta / TaN的第二阻挡层被溅射沉积到通孔底部和侧壁上。 这两个步骤可以通过施加到靶，通过室压力或通过晶片偏置的功率来区分。 第二步骤可以包括从通孔底部同时移除第一阻挡层并将第二阻挡层溅射到通孔侧壁上。 可以控制第一步骤中的室内条件，包括平衡中性粒子和离子，以将第一阻挡层从通孔底部移除，同时将其留在暴露在场区域上。

公开(公告)号：US06218033B1

公开(公告)日：2001-04-17

申请号：US08780381

申请日：1997-01-08

申请人： Wei Cao ,  James Ward ,  Mike Tregoning ,  Xingbo Yang

发明人： Wei Cao ,  James Ward ,  Mike Tregoning ,  Xingbo Yang

IPC分类号： G11B566

CPC分类号： G11B5/7325 ,  C23C14/025 ,  Y10S428/90

摘要： The present invention provides magnetic recording media comprising a rigid substrate and an underlayer disposed over the substrate, in which the underlayer comprises CrTiCu or CrTiV. A magnetic layer is disposed over this underlayer, and is also disposed over a texturized surface. Generally, the substrate comprises aluminum, and an NiP layer is disposed over the substrate and below the underlayer. The texture will typically be imposed on this NiP layer. Advantageously, the CrTiCu or CrTiV underlayer has been found to compensate for texture-induced anisotropy, limiting a ratio of circumferential coercivity to radial coercivity within the range between about 0.8 and 1.25.

摘要翻译： 本发明提供磁性记录介质，其包括刚性基底和设置在基底上的底层，其中底层包括CrTiCu或CrTiV。 磁性层设置在该底层上，并且还设置在纹理化表面上。 通常，衬底包括铝，并且NiP层设置在衬底上并在衬底下方。 通常会对该NiP层施加纹理。 有利地，已经发现CrTiCu或CrTiV底层补偿纹理诱导的各向异性，将周向矫顽力与径向矫顽力的比率限制在约0.8和1.25之间的范围内。

公开(公告)号：US6083911A

公开(公告)日：2000-07-04

申请号：US208707

申请日：1998-12-10

申请人： Kevin P. Campbell ,  Michael Henry ,  Hiroki Yamada ,  Roger Williamson ,  Wei Cao ,  Michael Oldstone

发明人： Kevin P. Campbell ,  Michael Henry ,  Hiroki Yamada ,  Roger Williamson ,  Wei Cao ,  Michael Oldstone

IPC分类号： A61K38/17 ,  A61K35/34 ,  A61K38/16

CPC分类号： A61K38/177

摘要： Disclosed is a method for inhibiting the binding of an arenavirus to a cellular receptor. The method involves providing, in soluble form, a reagent comprising .alpha.-dystroglycan or a portion thereof, the reagent being characterized by the ability to bind to the arenavirus thereby inhibiting the binding of the arenavirus to the cellular receptor. The reagent is contacted with an arenavirus particle prior to infection of a cell by the arenavirus particle. Also disclosed are methods for treating an arenavirus infection in a patient and preventing an arenavirus infection in an individual at risk. These methods involve providing a therapeutic composition comprising .alpha.-dystroglycan or a portion thereof which is characterized by the ability to bind to arenaviruses, thereby inhibiting the binding of arenaviruses to a cellular receptor; and administering the composition to the patient or individual at risk. Arenaviruses to which the methods of the present invention apply include, without limitation, Lymphocyte Choriomeningitis Virus, Lassa fever virus, Mobala, and Oliveros. In another aspect, the disclosure relates to an embryonic stem cell line, and cells derived therefrom, which is homozygous for a disrupted dystroglycan gene, wherein the disruption prevents the synthesis of functional dystroglycan in the cells. Applications of the dystroglycan null embryonic stem cells include producing dystroglycan or a portion thereof in the cells and also for identifying portions of dystroglycan necessary for arenavirus infection. Also disclosed is a method for identifying antiviral compounds which interfere specifically with the binding of arenavirus and .alpha.-dystroglycan, comprising providing a binding assay system for the determination of binding of arenavirus and .alpha.-dystroglycan. The candidate antiviral compounds are introduced into the binding assay system and antiviral compounds which substantially inhibit binding of arenavirus to .alpha.-dystroglycan are identified.

公开(公告)号：US09481865B2

公开(公告)日：2016-11-01

申请号：US14369448

申请日：2012-08-06

申请人： Helen Zhang ,  Luyi Zhang ,  Wei Cao

发明人： Helen Zhang ,  Luyi Zhang ,  Wei Cao

IPC分类号： C12N5/071 ,  A01N1/02 ,  C12N5/00

CPC分类号： C12N5/0626 ,  A01N1/021 ,  C12N5/0037 ,  C12N2501/999

摘要： Disclosed is a serum-free freezing medium used in adipose-derived stem cells and a method for establishing an adipose-derived stem cell library. The serum-free freezing medium comprises a serum-free culture medium, dimethyl sulfoxide and a serum substitution component KSR; the defects of unstable freezing quality of the adipose-derived stem cells and influence of harmful factors in serum on the adipose-derived stem cells are solved, and the adipose-derived stem cells stored have the advantages of high survival percentage, well adherence growth and strong differentiation capacity.

摘要翻译： 公开了用于脂肪来源的干细胞的无血清冷冻培养基和建立脂肪来源的干细胞文库的方法。 无血清冷冻培养基包含无血清培养基，二甲基亚砜和血清替代成分KSR; 解决了脂肪干细胞不稳定冻结质量缺陷和血清中有害因素对脂肪干细胞的影响，储存的脂肪干细胞具有生存率高，附着力增长和 强分化能力。

公开(公告)号：US08969982B2

公开(公告)日：2015-03-03

申请号：US12927670

申请日：2010-11-19

申请人： Rongfu Xiao ,  Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jinh Torng ,  Tom Zhong ,  Witold Kula ,  Terry Kin Ting Ko ,  Wei Cao ,  Wai-Ming J. Kan ,  Liubo Hong

发明人： Rongfu Xiao ,  Cheng T. Horng ,  Ru-Ying Tong ,  Chyu-Jinh Torng ,  Tom Zhong ,  Witold Kula ,  Terry Kin Ting Ko ,  Wei Cao ,  Wai-Ming J. Kan ,  Liubo Hong

IPC分类号： H01L29/82 ,  H01L43/12 ,  H01L43/08

CPC分类号： H01L43/12 ,  G11C11/161 ,  H01L43/08

摘要： A multi-layered bottom electrode for an MTJ device on a silicon nitride substrate is described. It comprises a bilayer of alpha tantalum on ruthenium which in turn lies on a nickel chrome layer over a second tantalum layer.

摘要翻译： 描述了用于氮化硅衬底上的MTJ器件的多层底电极。 它包括在钌上的α钽的双层，其又位于第二钽层上的镍铬层上。

公开(公告)号：US08964749B2

公开(公告)日：2015-02-24

申请号：US13340101

申请日：2011-12-29

申请人： Wei Cao ,  Li Xue

发明人： Wei Cao ,  Li Xue

IPC分类号： H04L12/721 ,  H04L12/751

CPC分类号： H04L45/68 ,  H04L45/02

摘要： A method, a device and a system for establishing a Pseudo Wire (PW) are provided. The method includes: receiving, by a switching node, a control message; constructing a first control message according the first FEC information and the routing information in the control message, and sending the first control message to a second terminal node; constructing, by the second terminal node, a second control message, where the second control message includes the second FEC information and the second routing information, and the second FEC information carries identification information of the first terminal node; and sending the second control message to the switching node. In the method, it is unnecessary to manually configure a PW routing table on the switching node or establish a PW routing table dynamically through a routing protocol, and it is unnecessary to configure mapping relations between PW segments manually. This method achieves robust maintenance.

摘要翻译： 提供了一种用于建立伪线（PW）的方法，装置和系统。 该方法包括：由交换节点接收控制消息; 根据控制消息中的第一FEC信息和路由信息构建第一控制消息，并将第一控制消息发送到第二终端节点; 由所述第二终端节点构建第二控制消息，其中所述第二控制消息包括所述第二FEC信息和所述第二路由信息，并且所述第二FEC信息携带所述第一终端节点的识别信息; 以及将所述第二控制消息发送到所述交换节点。 在该方法中，不需要在交换节点上手动配置PW路由表，也可以通过路由协议动态建立PW路由表，而不需要手工配置PW段之间的映射关系。 该方法实现了强大的维护。