摘要:
The present invention is generally directed to catalyzed hot stamp methods for polishing and/or patterning carbon nanotube-containing substrates. In some embodiments, the substrate, as a carbon nanotube fiber end, is brought into contact with a hot stamp (typically at 200-800° C.), and is kept in contact with the hot stamp until the morphology/patterns on the hot stamp have been transferred to the substrate. In some embodiments, the hot stamp is made of material comprising one or more transition metals (Fe, Ni, Co, Pt, Ag, Au, etc.), which can catalyze the etching reaction of carbon with H2, CO2, H2O, and/or O2. Such methods can (1) polish the carbon nanotube-containing substrate with a microscopically smooth finish, and/or (2) transfer pre-defined patterns from the hot stamp to the substrate. Such polished or patterned carbon nanotube substrates can find application as carbon nanotube electrodes, field emitters, and field emitter arrays for displays and electron sources.
摘要:
The present invention is directed to at least one method and at least one apparatus for determining the length of single-wall carbon nanotubes (SWNTs). The method generally comprises the steps of: dispersing a sample of SWNTs into a suitable dispersing medium to form a solvent-suspension of solvent-suspended SWNTs; determining the mean SWNT diameter of the solvent-suspended SWNTs; introducing the solvent-suspended SWNTs into a viscosity-measuring device; obtaining a specific viscosity for the SWNT solvent-suspension; and determining the length of the SWNTs based upon the specific viscosity by solving, for example, the Kirkwood-Auer equation corrected by Batchelor's formula for the drag on a slender cylinder for “L,” to determine the length of the SWNTs. The apparatus generally comprises: a SWNT sample introduction mechanism; a dispersal chamber; a SWNT radius-determination chamber; and a viscosity determining chamber, wherein the SWNT sample introduction mechanism, the dispersal chamber, the SWNT radius-determination chamber, and the viscosity determination chamber are each operatively connected to at least one of the others.
摘要:
The present invention is directed to a method for depositing diamond films and particles on a variety of substrates by flowing a gas or gas mixture capable of supplying (1) carbon, (2) hydrogen, (3) a halogen and, preferably, (4) a chalcogen through a reactor over the substrate material. The reactant gases may be premixed with an inert gas in order to keep the overall gas mixture composition low in volume percent of carbon and rich in hydrogen. Pre-treatment of the reactant gases to a high energy state is not required as it is in most prior art processes for chemical vapor deposition of diamond. Since pretreatment is not required, the process may be applied to substrates of virtually any desired size, shape or configuration.
摘要:
Method and apparatus for accurately and instantaneously determining the thermodynamic temperature of remote objects by continuous determination of the emissivity, the reflectivity, and optical constants, as well as the apparent or brightness temperature of the sample with a single instrument. The emissivity measurement is preferably made by a complex polarimeter including a laser that generates polarized light, which is reflected from the sample into a detector system. The detector system includes a beamsplitter, polarization analyzers, and four detectors to measure independently the four Stokes vectors of the reflected radiation. The same detectors, or a separate detector in the same instrument, is used to measure brightness temperature. Thus, the instrument is capable of measuring both the change in polarization upon reflection as well as the degree of depolarization and hence diffuseness. This enables correction for surface roughness of the sample and background radiation, which could otherwise introduce errors in temperature measurement.