公开(公告)号：US20080090390A1

公开(公告)日：2008-04-17

申请号：US11984944

申请日：2007-11-26

申请人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

发明人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC分类号： H01L21/20

CPC分类号： C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

摘要翻译： 本发明涉及一种具有高载流子浓度和低电阻率的n型ZnTe系化合物半导体单晶的制造方法，ZnTe系化合物半导体单晶以及使用ZnTe系化合物半导体作为基底制造的半导体装置 会员。 具体地，第一掺杂剂和第二掺杂剂共掺杂到ZnTe系化合物半导体单晶中，使得第二掺杂剂的原子数小于第一掺杂剂的原子数，第一掺杂剂用于控制 ZnTe系化合物半导体的导电类型为第一导电类型，第二掺杂剂用于将导电类型控制为不同于第一导电类型的第二导电类型。 通过本发明，可以实现与早期技术相比掺杂量小的期望载流子浓度，并且可以提高所得晶体的结晶度。

公开(公告)号：US20080089831A1

公开(公告)日：2008-04-17

申请号：US11984950

申请日：2007-11-26

申请人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

发明人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC分类号： C01B19/00

CPC分类号： C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

公开(公告)号：US07358159B2

公开(公告)日：2008-04-15

申请号：US10472446

申请日：2002-03-20

申请人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

发明人： Tetsuya Yamamoto ,  Atsutoshi Arakawa ,  Kenji Sato ,  Toshiaki Asahi

IPC分类号： H01L21/00

CPC分类号： C30B29/48 ,  C30B23/002 ,  C30B25/02 ,  H01L21/02411 ,  H01L21/0248 ,  H01L21/02554 ,  H01L21/0256 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02623 ,  H01L21/02631 ,  H01L29/227 ,  H01L33/285

摘要： The present invention relates to a method for producing an n-type ZnTe system compound semiconductor single crystal having high carrier concentration and low resistivity, the ZnTe system compound semiconductor single crystal, and a semiconductor device produced by using the ZnTe system compound semiconductor as a base member. Concretely, a first dopant and a second dopant are co-doped into the ZnTe system compound semiconductor single crystal so that the number of atoms of the second dopant becomes smaller than the number of atoms of the first dopant, the first dopant being for controlling a conductivity type of the ZnTe system compound semiconductor to a first conductivity type, and the second dopant being for controlling the conductivity type to a second conductivity type different from the first conductivity type. By the present invention, a desired carrier concentration can be achieved with a doping amount smaller than in earlier technology, and crystallinity of the obtained crystal can be improved.

摘要翻译： 本发明涉及一种具有高载流子浓度和低电阻率的n型ZnTe系化合物半导体单晶的制造方法，ZnTe系化合物半导体单晶以及使用ZnTe系化合物半导体作为基底制造的半导体装置 会员。 具体地，第一掺杂剂和第二掺杂剂共掺杂到ZnTe系化合物半导体单晶中，使得第二掺杂剂的原子数小于第一掺杂剂的原子数，第一掺杂剂用于控制 ZnTe系化合物半导体的导电类型为第一导电类型，第二掺杂剂用于将导电类型控制为不同于第一导电类型的第二导电类型。 通过本发明，可以实现与早期技术相比掺杂量小的期望载流子浓度，并且可以提高所得晶体的结晶度。

公开(公告)号：US07292761B2

公开(公告)日：2007-11-06

申请号：US10553842

申请日：2004-04-16

申请人： Kazuyuki Miyake ,  Syunichiro Yamaguchi ,  Tetsuya Yamamoto

发明人： Kazuyuki Miyake ,  Syunichiro Yamaguchi ,  Tetsuya Yamamoto

IPC分类号： G02B6/032 ,  G02B6/26

CPC分类号： G02B6/2552 ,  G02B6/02333 ,  G02B6/02347 ,  G02B6/262 ,  G02B6/32

摘要： A connection end portion of a PC fiber 10 is fused by heating to provide a sealing portion 15 which seals holes 12a of a cladding 12. Length L of the sealing portion 15 is determined by calculation based on the conditions such as an incident angle θ [°] of signal light 22 with respect to the PC fiber 10, an outer diameter D [μm] of the fiber, a diameter a [μm] of the core of the fiber and a refractive index n of the sealing portion 15.

摘要翻译： PC纤维10的连接端部通过加热熔合，以提供密封包层12的孔12a的密封部分15。 密封部分15的长度L通过基于诸如信号光22相对于PC纤维10的入射角θ[°]，纤维的外径D [mum]，直径a [mum]纤维的芯部和密封部分15的折射率n。

公开(公告)号：US20070208202A1

公开(公告)日：2007-09-06

申请号：US11346551

申请日：2006-02-02

申请人： Tetsuya Yamamoto ,  Yasutaka Nakatani ,  Hiroko Harada

发明人： Tetsuya Yamamoto ,  Yasutaka Nakatani ,  Hiroko Harada

IPC分类号： C07F5/05 ,  C07F5/02

CPC分类号： C07F5/02

摘要： On producing a purified borazine compound, a borazine compound is filtrated under an atmospheric condition of a water content of not higher than 2000 volume ppm. Or, on filling a borazine compound into a container, the above described borazine compound is filled into the above described container under an atmospheric condition of a water content of not higher than 2000 volume ppm. Or, as a container for preservation for preserving a borazine compound, a container for preserving a borazine compound, which has withstanding pressure of not lower than 0.1 MPa, is used.

摘要翻译： 在制备纯化的环硼氮烷化合物时，在含水量不高于2000体积ppm的大气条件下过硼烷化合物。 或者，在将环硼氮烷化合物填充到容器中时，将上述环硼氮烷化合物在含水量不高于2000体积ppm的大气条件下填充到上述容器中。 或者，作为用于保存环硼氮烷化合物的保存用容器，使用耐受压力为0.1MPa以上的保护环硼氮烷化合物的容器。

公开(公告)号：US07263388B2

公开(公告)日：2007-08-28

申请号：US09894883

申请日：2001-06-29

申请人： Tetsuya Yamamoto

发明人： Tetsuya Yamamoto

IPC分类号： H04M1/00 ,  H04B1/16 ,  H02J7/00

CPC分类号： H02J7/0027 ,  H02J7/02 ,  H02J7/025 ,  H04M1/04

摘要： A wall (103 in FIG. 1) is erected perpendicularly to a floor (101), and a charger body (105) in which a primary side coil (201) and a power feed portion (203) are included is mounted on the wall (103). An induction core (107) stretches in the shape of a hook from the charger body (105), and it penetrates through the primary side coil (201) inside the charger body (105). The induction core (107) can suspend a portable telephone (109) and another portable equipment (111) through charging arches (113).

摘要翻译： 一个壁（图1中的103）垂直于地板（101）竖立，并且其中包括一次侧线圈（201）和馈电部分（203）的充电器主体（105）安装在壁 （103）。 感应芯（107）从充电体（105）延伸成钩形，穿过充电器主体（105）内的初级侧线圈（201）。 感应芯（107）可以通过充电拱（113）悬挂便携式电话（109）和另一个便携式设备（111）。

公开(公告)号：US20070163596A1

公开(公告)日：2007-07-19

申请号：US11331977

申请日：2006-01-13

申请人： Takayasu Mikkaichi ,  Takahiro Kogasaka ,  Tetsuya Yamamoto ,  Kensei Nakahashi ,  Hironobu Kawano

发明人： Takayasu Mikkaichi ,  Takahiro Kogasaka ,  Tetsuya Yamamoto ,  Kensei Nakahashi ,  Hironobu Kawano

IPC分类号： A62B9/06 ,  A61M16/00

CPC分类号： A61M16/04 ,  A61M16/0415 ,  A61M16/0434 ,  A61M16/0461 ,  A61M16/0463 ,  A61M16/0486 ,  A61M16/0488 ,  A61M16/0493

摘要： An endotracheal tube according to the present invention is used by being installed into a patient so as to use it together with a device having an insertion section which is inserted into the body. A portion overlapping with the device inserted into the patient is formed as a flat shape; and furthermore, an outer face portion formed along a longitudinal direction of a cross-section, of the portion formed in the flat shape contacts the device.

摘要翻译： 根据本发明的气管内插管通过安装到患者体内而被使用，以便将其与具有插入到体内的插入部分的装置一起使用。 与插入患者体内的装置重叠的部分形成为平坦形状; 此外，形成为平坦形状的部分沿着横截面的纵向方向形成的外表面部分接触该装置。

公开(公告)号：US07208627B2

公开(公告)日：2007-04-24

申请号：US11013192

申请日：2004-12-15

申请人： Tetsuya Yamamoto ,  Yasutaka Nakatani ,  Takuya Kamiyama

发明人： Tetsuya Yamamoto ,  Yasutaka Nakatani ,  Takuya Kamiyama

IPC分类号： C07F5/02

CPC分类号： C07F5/022

摘要： In the process of synthesizing alkylborazine compound represented by the chemical formula 2, by a reaction of a halogenated borazine compound represented by the chemical formula 1 with a Grignard reagent, thus synthesized alkylborazine compound is washed with water, or subjected to sublimation purification or distillation purification at least three times, and/or subjected to distillation purification at least twice. In the formulas, R1 independently represents alkyl group; R2 independently represents alkyl group; and X represents halogen atom.

摘要翻译： 在合成由化学式2表示的烷基硼氮化合物的过程中，通过化学式1表示的卤代环硼氮烷化合物与格氏试剂的反应，合成的烷基硼氮化合物用水洗涤，或进行升华纯化或蒸馏纯化 至少三次，和/或经蒸馏纯化至少两次。 在式中，R 1独立地表示烷基; R 2独立地表示烷基; X表示卤素原子。

公开(公告)号：US20060143189A1

公开(公告)日：2006-06-29

申请号：US10522552

申请日：2004-07-09

申请人： Takashi Imaeda ,  Kimitaka Endo ,  Jouji Nakayama ,  Tetsuya Yamamoto ,  Ken-ichiro Shimokura ,  Tsutomu Yabuuchi ,  Hirohisa Tezuka ,  Masato Urano

发明人： Takashi Imaeda ,  Kimitaka Endo ,  Jouji Nakayama ,  Tetsuya Yamamoto ,  Ken-ichiro Shimokura ,  Tsutomu Yabuuchi ,  Hirohisa Tezuka ,  Masato Urano

IPC分类号： G06F7/00

CPC分类号： H04L63/0807 ,  G06F21/335 ,  G06F21/6218 ,  G06F2221/2115 ,  H04L63/102 ,  Y10S707/99939

摘要： A disclosed database access control apparatus generates and stores an access key based on a user ID of a user apparatus. Then, the database access control apparatus sends the access key to the user apparatus with an address of a proxy process server apparatus. The user apparatus sends the access key to the proxy process server apparatus when making a database access request, ad the proxy process server apparatus sends the access key to the database access control apparatus when making a database process request. When receiving the database process request, the database access control apparatus determines whether an access key the same as the access key received from the proxy process server apparatus is stored in the database access control apparatus, and accesses the database only if having the access key.

摘要翻译： 所公开的数据库访问控制装置基于用户装置的用户ID生成并存储访问密钥。 然后，数据库访问控制装置使用代理处理服务器装置的地址向用户装置发送访问密钥。 当进行数据库访问请求时，用户装置将访问密钥发送给代理处理服务器装置，当进行数据库处理请求时，代理处理服务器装置将访问密钥发送到数据库访问控制装置。 数据库访问控制装置在接收到数据库处理请求时，确定与从代理处理服务器装置接收的访问密钥相同的访问密钥是否存储在数据库访问控制装置中，仅在具有访问密钥的情况下访问数据库。

公开(公告)号：US07026671B2

公开(公告)日：2006-04-11

申请号：US10457492

申请日：2003-06-09

申请人： Tetsuya Mizuguchi ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Takeyuki Sone ,  Hiroshi Kano

发明人： Tetsuya Mizuguchi ,  Masanori Hosomi ,  Kazuhiro Ohba ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Yamamoto ,  Takeyuki Sone ,  Hiroshi Kano

IPC分类号： H01L29/76

CPC分类号： H01L43/12 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/15 ,  H01F10/3204 ,  H01F10/324 ,  H01F10/3254 ,  H01F41/302 ,  H01L27/228 ,  Y10T29/49034

摘要： A magnetoresistive effect element (1) has an arrangement in which a pair of ferromagnetic material layers (magnetization fixed layer (5) and magnetization free layer (7)) is opposed to each other through an intermediate layer (6) to obtain a magnetoresistive change by causing a current to flow in the direction perpendicular to the layer surface and in which the ferromagnetic material layers are annealed by anneal including rotating field anneal and the following static field anneal. A magnetic memory device comprises this magnetoresistive effect element (1) and bit lines and word lines sandwiching the magnetoresistive effect element (1) in the thickness direction. When the magnetoresistive effect element (1) and the magnetic memory device are manufactured, the ferromagnetic material layers (5, 7) are annealed by rotating field anneal and the following static field anneal. There are provided the magnetoresistive effect element that can obtain excellent magnetic characteristics by controlling magnetic anisotropies of the ferromagnetic material layers, the magnetic memory device including this magnetoresistive effect element and which may have excellent write characteristics, and methods for manufacturing these magnetoresistive effect element and magnetic memory device.

摘要翻译： 磁阻效应元件（1）具有一对铁磁材料层（磁化固定层（5）和磁化自由层（7））通过中间层（6）彼此相对以获得磁阻变化的布置 通过使电流在垂直于层表面的方向上流动，并且其中铁磁材料层通过包括旋转场退火和随后的静态场退火的退火退火。 磁存储器件包括该磁阻效应元件（1）和在厚度方向上夹着磁阻效应元件（1）的位线和字线。 当制造磁阻效应元件（1）和磁存储器件时，铁磁材料层（5,7）通过旋转场退火和随后的静态场退火进行退火。 提供了通过控制铁磁材料层的磁各向异性，包括该磁阻效应元件并且可能具有优良写入特性的磁存储器件而获得优异的磁特性的磁阻效应元件，以及用于制造这些磁阻效应元件和磁 存储设备。