公开(公告)号：US20050086626A1

公开(公告)日：2005-04-21

申请号：US10992755

申请日：2004-11-22

申请人： Toshiro Sato ,  Kazumasa Kobayashi ,  Shogo Fujimori

发明人： Toshiro Sato ,  Kazumasa Kobayashi ,  Shogo Fujimori

IPC分类号： G06F17/50 ,  H01L21/82 ,  G06F9/455

CPC分类号： G06F17/5045 ,  G06F17/5036

摘要： An electronic circuit designing method and apparatus designs an electronic circuit by CAD, by generating design constraints with respect to the electronic circuit based on at least one of general layout and wiring information related to devices and wirings included in the electronic circuit, user requirements defined by a user, and user resources defined by the user, and urging an input to the user by displaying the design constraints.

摘要翻译： 电子电路设计方法和装置通过CAD设计电子电路，基于与电子电路中包括的设备和布线相关的一般布局和布线信息中的至少一个，相对于电子电路产生设计约束，由 用户和由用户定义的用户资源，并且通过显示设计约束来敦促对用户的输入。

公开(公告)号：US06356079B1

公开(公告)日：2002-03-12

申请号：US09459909

申请日：1999-12-14

申请人： Tetsuhiko Mizoguchi ,  Tetsuo Inoue ,  Toshiro Sato

发明人： Tetsuhiko Mizoguchi ,  Tetsuo Inoue ,  Toshiro Sato

IPC分类号： G01R3302

CPC分类号： G01R33/02

摘要： The present invention provides a magnetic-field sensor using a magnetic substance. In the magnetic-field sensor, a transmission-line element constituted of a conductor layer, dielectric layer and a magnetic layer is inserted in a feedback circuit of a phase-shift type oscillation circuit using an open-loop operational amplifier as an amplifier. An output of the operational amplifier is fed back to an input thereof through the transmission-line element. Thus, a variation in oscillation frequency depending upon the intensity of an external magnetic field is detected as an output of the sensor.

摘要翻译： 本发明提供一种使用磁性物质的磁场传感器。 在磁场传感器中，使用开环运算放大器作为放大器将由导体层，电介质层和磁性层构成的传输线元件插入到相移型振荡电路的反馈电路中。 运算放大器的输出通过传输线元件反馈到其输入端。 因此，根据外部磁场的强度的振荡频率的变化被检测为传感器的输出。

公开(公告)号：US06278951B1

公开(公告)日：2001-08-21

申请号：US09225357

申请日：1999-01-05

申请人： Toshiro Sato

发明人： Toshiro Sato

IPC分类号： H04B332

CPC分类号： G06F17/5036 ,  H05K1/0216 ,  H05K3/0005

摘要： A crosstalk noise calculation method for calculating crosstalk noise among a plurality of wirings, includes calculating a crosstalk noise using a function in which the crosstalk noise becomes approximately constant when a predetermined wiring length is exceeded, so as to improve the design efficiency of the wirings by preventing an excessively strict checking from being performed.

摘要翻译： 用于计算多个布线中的串扰噪声的串扰噪声计算方法包括使用当超过预定布线长度时串扰噪声变得近似恒定的功能来计算串扰噪声，以便通过以下方式提高布线的设计效率 防止过度严格的检查。

公开(公告)号：US5583474A

公开(公告)日：1996-12-10

申请号：US248679

申请日：1994-05-25

申请人： Tetsuhiko Mizoguchi ,  Toshiro Sato ,  Masashi Sahashi ,  Michio Hasegawa ,  Hiroshi Tomita ,  Atsuhito Sawabe

发明人： Tetsuhiko Mizoguchi ,  Toshiro Sato ,  Masashi Sahashi ,  Michio Hasegawa ,  Hiroshi Tomita ,  Atsuhito Sawabe

IPC分类号： G05F1/40 ,  H01F5/00 ,  H01F17/00 ,  H01F27/30 ,  H01F41/00

CPC分类号： H01F17/0006 ,  H01F2017/0066 ,  H01F2017/0086 ,  Y10T29/4902

摘要： Disclosed herein is a planar magnetic element comprising a substrate, a first magnetic layer arranged over the substrate, a first insulation layer arranged over the first magnetic layer, a planer coil formed of a conductor, having a plurality of turns, arranged over the first insulation layer and having a gap aspect ratio of at least 1, the gap aspect ratio being the ratio of the thickness of the conductor to the gap between any adjacent two of the turns, a second insulation layer arranged over the planar coil, and a second magnetic layer arranged over the second insulation layer. When used as an inductor, the planar magnetic element has a great quality coefficient Q. When used as a transformer, it has a large gain and a high voltage ratio. Since the element is small and thin, it is suitable for use in an integrated circuit, and can greatly contribute to miniaturization of electronic devices.

公开(公告)号：US5572478A

公开(公告)日：1996-11-05

申请号：US414194

申请日：1995-03-31

申请人： Toshiro Sato ,  Tomoharu Tanaka ,  Tetsuhiko Mizoguchi ,  Yuji Ide

发明人： Toshiro Sato ,  Tomoharu Tanaka ,  Tetsuhiko Mizoguchi ,  Yuji Ide

IPC分类号： G11C5/14 ,  G11C16/30 ,  G11C16/02

CPC分类号： G11C5/145 ,  G11C16/30 ,  G11C5/147

摘要： A power supply unit including DC-DC converter using a thin and planar inductor arranged in an IC memory card incorporating an EEPROM memory chip, wherein a voltage is adjusted by a dropping regulator, thereby reducing power consumption. The thin and planar inductor includes, stacked on a semiconductor substrate, a planar coil and magnetic thin films formed to sandwich the planar coil, so that an entire area of an IC card can be decreased. The IC card can be driven by a single power supply, thus providing a compact portable information device which can be driven by a battery for a long time.

摘要翻译： 一种电源单元，包括使用布置在包含EEPROM存储器芯片的IC存储卡中的薄平面电感器的DC-DC转换器，其中通过降压调节器调节电压，从而降低功耗。 薄平面电感器包括堆叠在半导体衬底上的平面线圈和形成为夹住平面线圈的磁性薄膜，使得IC卡的整个区域可以减小。 IC卡可以由单个电源驱动，从而提供可由电池长时间驱动的小型便携式信息装置。

公开(公告)号：US5522946A

公开(公告)日：1996-06-04

申请号：US266757

申请日：1994-06-28

申请人： Hiroshi Tomita ,  Tetsuo Inoue ,  Hiromi Fuke ,  Toshiro Sato ,  Tetsuhiko Mizoguchi

发明人： Hiroshi Tomita ,  Tetsuo Inoue ,  Hiromi Fuke ,  Toshiro Sato ,  Tetsuhiko Mizoguchi

IPC分类号： C22C45/00 ,  H01F10/12 ,  H01F10/13 ,  H01F10/16 ,  H01F19/00 ,  H01F30/10 ,  H01F1/153

CPC分类号： H01F10/131 ,  H01F10/132 ,  H01F30/10

摘要： An amorphous magnetic thin film possesses as at least part of a thin film forming area a microstructure composed of a first amorphous phase containing at least either of iron and cobalt and bearing magnetism and a second amorphous phase disposed round the first amorphous phase and containing boron and at least one element selected from among the elements of the 4B Group in the Periodic Table of Elements and exhibits uniaxial magnetic anisotropy in the plane of film. The amorphous magnetic thin film possesses soft magnetism concurrently satisfying high saturation magnetization and high resistivity and, at the same time, easily acquires high frequency permeability by applying magnetic field in the hard axis of magnetization. Use of these amorphous magnetic thin films for plane magnetic elements permits the plane magnetic elements to be miniaturized and to be endowed with exalted performance. The amorphous magnetic thin film possesses a composition substantially represented by the formula:(Fe.sub.1-x Co.sub.x).sub.1-y (B.sub.1-z X.sub.z).sub.y(wherein X stands for at least one element selected from among the 4B Group elements and x, y, and z stand for numerals satisfying the expressions, 0

摘要翻译： 无定形磁性薄膜至少具有薄膜形成区域的至少一部分，该微结构由包含铁和钴中的至少一种和承载磁性的第一非晶相组成，而第二非晶相设置在第一非晶相周围并含有硼和 选自元素周期表4B族的元素中的至少一种元素，并且在膜的平面中显示单轴磁各向异性。 非晶磁性薄膜具有同时满足高饱和磁化强度和高电阻率的软磁性，同时通过在硬磁化轴上施加磁场容易地获得高频磁导率。 这些非晶磁性薄膜用于平面磁性元件允许平面磁性元件小型化并赋予高级性能。 非晶磁性薄膜具有基本上由式（Fe1-xCox）1-y（B1-zXz）y表示的组成（其中X表示选自4B族元素中的至少一种元素，x，y和 z表示满足表达式0

公开(公告)号：US4707622A

公开(公告)日：1987-11-17

申请号：US815061

申请日：1985-12-31

申请人： Hisoka Takao ,  Toshiro Sato ,  Seiichi Saito ,  Toshinari Hayashi

发明人： Hisoka Takao ,  Toshiro Sato ,  Seiichi Saito ,  Toshinari Hayashi

IPC分类号： H03K19/0944 ,  H03K19/0952 ,  H03K19/094

CPC分类号： H03K19/09443 ,  H03K19/0952

摘要： A logic circuit includes an inverter circuit including a first enhancement type field effect transistor having a gate connected to an input, and a first depletion type transistor having a gate and a source which are directly connected to a drain of the first enhancement type field effect transistor. A source follower circuit including a second enhancement type field effect transistor having a gate is connected to a connecting point of the first enhancement type field effect transistor and the first depletion type field effect transistor. A second depletion type field effect transistor having a gate and a source which are directly connected to each other has a drain which is connected to a source of the second enhancement type field effect transistor. A first power source is connected to the drains of the first depletion type field effect transistor and the second enhancement type field effect transistor and a second power source is connected to the sources of the first enhancement type field effect transistor and the second depletion type field effect transistor. An output is formed at the connecting point of the second enhancement type field effect transistor and the second depletion type field effect type transistor.

摘要翻译： 逻辑电路包括反相器电路，其包括具有连接到输入端的栅极的第一增强型场效应晶体管和具有栅极和源极的第一耗尽型晶体管，其直接连接到第一增强型场效应晶体管的漏极 。 包括具有栅极的第二增强型场效应晶体管的源极跟随器电路连接到第一增强型场效应晶体管和第一耗尽型场效应晶体管的连接点。 具有彼此直接连接的栅极和源极的第二耗尽型场效应晶体管具有连接到第二增强型场效应晶体管的源极的漏极。 第一电源连接到第一耗尽型场效应晶体管和第二增强型场效应晶体管的漏极，第二电源连接到第一增强型场效应晶体管的源极和第二衰减型场效应 晶体管。 在第二增强型场效应晶体管和第二耗尽型场效应晶体管的连接点处形成输出。