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32 条记录 (耗时 0.024 秒)

    Power supply unit for an IC memory card
    1.
    发明授权
    Power supply unit for an IC memory card 失效
    IC存储卡的电源单元

    公开(公告)号：US5572478A

    公开(公告)日：1996-11-05

    申请号：US414194

    申请日：1995-03-31

    申请人： Toshiro Sato ,  Tomoharu Tanaka ,  Tetsuhiko Mizoguchi ,  Yuji Ide

    发明人： Toshiro Sato ,  Tomoharu Tanaka ,  Tetsuhiko Mizoguchi ,  Yuji Ide

    IPC分类号： G11C5/14 ,  G11C16/30 ,  G11C16/02

    CPC分类号： G11C5/145 ,  G11C16/30 ,  G11C5/147

    摘要： A power supply unit including DC-DC converter using a thin and planar inductor arranged in an IC memory card incorporating an EEPROM memory chip, wherein a voltage is adjusted by a dropping regulator, thereby reducing power consumption. The thin and planar inductor includes, stacked on a semiconductor substrate, a planar coil and magnetic thin films formed to sandwich the planar coil, so that an entire area of an IC card can be decreased. The IC card can be driven by a single power supply, thus providing a compact portable information device which can be driven by a battery for a long time.

    摘要翻译： 一种电源单元，包括使用布置在包含EEPROM存储器芯片的IC存储卡中的薄平面电感器的DC-DC转换器，其中通过降压调节器调节电压，从而降低功耗。 薄平面电感器包括堆叠在半导体衬底上的平面线圈和形成为夹住平面线圈的磁性薄膜，使得IC卡的整个区域可以减小。 IC卡可以由单个电源驱动，从而提供可由电池长时间驱动的小型便携式信息装置。

    Semiconductor memory, memory card, and method of driving power supply for EEPROM
    2.
    发明授权
    Semiconductor memory, memory card, and method of driving power supply for EEPROM 失效
    半导体存储器，存储卡和驱动EEPROM电源的方法

    公开(公告)号：US5469399A

    公开(公告)日：1995-11-21

    申请号：US213058

    申请日：1994-03-15

    申请人： Toshiro Sato ,  Tomoharu Tanaka ,  Tetsuhiko Mizoguchi ,  Yuji Ide

    发明人： Toshiro Sato ,  Tomoharu Tanaka ,  Tetsuhiko Mizoguchi ,  Yuji Ide

    IPC分类号： G11C5/14 ,  G11C16/30 ,  G11C16/02

    CPC分类号： G11C5/145 ,  G11C16/30 ,  G11C5/147

    摘要： A DC--DC converter using a planar inductor is arranged in an IC memory card incorporating an EEPROM memory chip, and power supply is performed such that a voltage is adjusted by a dropping regulator, thereby reducing power consumption. The power consumption of the IC memory card incorporating the EEPROM can be reduced. The IC card can be driven by a single power supply, thereby providing a compact portable information device which can be driven by a battery for a long time.

    摘要翻译： 在包含EEPROM存储器芯片的IC存储卡中布置使用平面电感器的DC-DC转换器，并且执行电源，使得通过降压调节器调节电压，从而降低功耗。 结合了EEPROM的IC存储卡的功耗可以降低。 IC卡可以由单个电源驱动，从而提供可由电池长时间驱动的紧凑型便携式信息装置。

    Planar magnetic element
    6.
    发明授权
    Planar magnetic element 失效
    平面磁性元件

    公开(公告)号：US06404317B1

    公开(公告)日：2002-06-11

    申请号：US08701996

    申请日：1996-08-23

    申请人： Tetsuhiko Mizoguchi ,  Toshiro Sato ,  Masashi Sahashi ,  Michio Hasegawa ,  Hiroshi Tomita ,  Atsuhito Sawabe

    发明人： Tetsuhiko Mizoguchi ,  Toshiro Sato ,  Masashi Sahashi ,  Michio Hasegawa ,  Hiroshi Tomita ,  Atsuhito Sawabe

    IPC分类号： H01F500

    CPC分类号： H01F17/0006 ,  H01F2017/0066 ,  H01F2017/0086 ,  Y10T29/4902

    摘要： Disclosed herein is a planar magnetic element comprising a substrate, a first magnetic layer arranged over the substrate, a first insulation layer arranged over the first magnetic layer, a planer coil formed of a conductor, having a plurality of turns, arranged over the first insulation layer and having a gap aspect ratio of at least 1, the gap aspect ratio being the ratio of the thickness of the conductor to the gap between any adjacent two of the turns, a second insulation layer arranged over the planar coil, and a second magnetic layer arranged over the second insulation layer. When used as an inductor, the planar magnetic element has a great quality coefficient Q. When used as a transformer, it has a large gain and a high voltage ratio. Since the element is small and thin, it is suitable for use in an integrated circuit, and can greatly contribute to miniaturization of electronic devices.

    摘要翻译： 本文公开了一种平面磁性元件，包括基板，布置在基板上的第一磁性层，布置在第一磁性层上的第一绝缘层，由导体形成的具有多个匝的平面线圈，布置在第一绝缘层 并且具有至少为1的间隙宽高比，间隙宽高比是导体的厚度与任何相邻的两个匝之间的间隙的比率，布置在平面线圈上的第二绝缘层和第二磁性 层布置在第二绝缘层上。 当用作电感器时，平面磁性元件具有很高的质量系数Q.当用作变压器时，其具有大的增益和高电压比。 由于元件小而薄，因此适用于集成电路，并且可以极大地有助于电子设备的小型化。

    Phase-shift type magnetic-field sensor using a magnetic substance
    7.
    发明授权
    Phase-shift type magnetic-field sensor using a magnetic substance 失效
    使用磁性物质的相移型磁场传感器

    公开(公告)号：US06356079B1

    公开(公告)日：2002-03-12

    申请号：US09459909

    申请日：1999-12-14

    申请人： Tetsuhiko Mizoguchi ,  Tetsuo Inoue ,  Toshiro Sato

    发明人： Tetsuhiko Mizoguchi ,  Tetsuo Inoue ,  Toshiro Sato

    IPC分类号： G01R3302

    CPC分类号： G01R33/02

    摘要： The present invention provides a magnetic-field sensor using a magnetic substance. In the magnetic-field sensor, a transmission-line element constituted of a conductor layer, dielectric layer and a magnetic layer is inserted in a feedback circuit of a phase-shift type oscillation circuit using an open-loop operational amplifier as an amplifier. An output of the operational amplifier is fed back to an input thereof through the transmission-line element. Thus, a variation in oscillation frequency depending upon the intensity of an external magnetic field is detected as an output of the sensor.

    摘要翻译： 本发明提供一种使用磁性物质的磁场传感器。 在磁场传感器中，使用开环运算放大器作为放大器将由导体层，电介质层和磁性层构成的传输线元件插入到相移型振荡电路的反馈电路中。 运算放大器的输出通过传输线元件反馈到其输入端。 因此，根据外部磁场的强度的振荡频率的变化被检测为传感器的输出。

    Amorphous magnetic thin film and plane magnetic element using same
    9.
    发明授权
    Amorphous magnetic thin film and plane magnetic element using same 失效
    非晶磁性薄膜和使用其的平面磁性元件

    公开(公告)号：US5522946A

    公开(公告)日：1996-06-04

    申请号：US266757

    申请日：1994-06-28

    申请人： Hiroshi Tomita ,  Tetsuo Inoue ,  Hiromi Fuke ,  Toshiro Sato ,  Tetsuhiko Mizoguchi

    发明人： Hiroshi Tomita ,  Tetsuo Inoue ,  Hiromi Fuke ,  Toshiro Sato ,  Tetsuhiko Mizoguchi

    IPC分类号： C22C45/00 ,  H01F10/12 ,  H01F10/13 ,  H01F10/16 ,  H01F19/00 ,  H01F30/10 ,  H01F1/153

    CPC分类号： H01F10/131 ,  H01F10/132 ,  H01F30/10

    摘要： An amorphous magnetic thin film possesses as at least part of a thin film forming area a microstructure composed of a first amorphous phase containing at least either of iron and cobalt and bearing magnetism and a second amorphous phase disposed round the first amorphous phase and containing boron and at least one element selected from among the elements of the 4B Group in the Periodic Table of Elements and exhibits uniaxial magnetic anisotropy in the plane of film. The amorphous magnetic thin film possesses soft magnetism concurrently satisfying high saturation magnetization and high resistivity and, at the same time, easily acquires high frequency permeability by applying magnetic field in the hard axis of magnetization. Use of these amorphous magnetic thin films for plane magnetic elements permits the plane magnetic elements to be miniaturized and to be endowed with exalted performance. The amorphous magnetic thin film possesses a composition substantially represented by the formula:(Fe.sub.1-x Co.sub.x).sub.1-y (B.sub.1-z X.sub.z).sub.y(wherein X stands for at least one element selected from among the 4B Group elements and x, y, and z stand for numerals satisfying the expressions, 0

    摘要翻译： 无定形磁性薄膜至少具有薄膜形成区域的至少一部分，该微结构由包含铁和钴中的至少一种和承载磁性的第一非晶相组成，而第二非晶相设置在第一非晶相周围并含有硼和 选自元素周期表4B族的元素中的至少一种元素，并且在膜的平面中显示单轴磁各向异性。 非晶磁性薄膜具有同时满足高饱和磁化强度和高电阻率的软磁性，同时通过在硬磁化轴上施加磁场容易地获得高频磁导率。 这些非晶磁性薄膜用于平面磁性元件允许平面磁性元件小型化并赋予高级性能。 非晶磁性薄膜具有基本上由式（Fe1-xCox）1-y（B1-zXz）y表示的组成（其中X表示选自4B族元素中的至少一种元素，x，y和 z表示满足表达式0