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    Planar magnetic element
    4.
    发明授权
    Planar magnetic element 失效
    平面磁性元件

    公开(公告)号：US06404317B1

    公开(公告)日：2002-06-11

    申请号：US08701996

    申请日：1996-08-23

    申请人： Tetsuhiko Mizoguchi ,  Toshiro Sato ,  Masashi Sahashi ,  Michio Hasegawa ,  Hiroshi Tomita ,  Atsuhito Sawabe

    发明人： Tetsuhiko Mizoguchi ,  Toshiro Sato ,  Masashi Sahashi ,  Michio Hasegawa ,  Hiroshi Tomita ,  Atsuhito Sawabe

    IPC分类号： H01F500

    CPC分类号： H01F17/0006 ,  H01F2017/0066 ,  H01F2017/0086 ,  Y10T29/4902

    摘要： Disclosed herein is a planar magnetic element comprising a substrate, a first magnetic layer arranged over the substrate, a first insulation layer arranged over the first magnetic layer, a planer coil formed of a conductor, having a plurality of turns, arranged over the first insulation layer and having a gap aspect ratio of at least 1, the gap aspect ratio being the ratio of the thickness of the conductor to the gap between any adjacent two of the turns, a second insulation layer arranged over the planar coil, and a second magnetic layer arranged over the second insulation layer. When used as an inductor, the planar magnetic element has a great quality coefficient Q. When used as a transformer, it has a large gain and a high voltage ratio. Since the element is small and thin, it is suitable for use in an integrated circuit, and can greatly contribute to miniaturization of electronic devices.

    摘要翻译： 本文公开了一种平面磁性元件，包括基板，布置在基板上的第一磁性层，布置在第一磁性层上的第一绝缘层，由导体形成的具有多个匝的平面线圈，布置在第一绝缘层 并且具有至少为1的间隙宽高比，间隙宽高比是导体的厚度与任何相邻的两个匝之间的间隙的比率，布置在平面线圈上的第二绝缘层和第二磁性 层布置在第二绝缘层上。 当用作电感器时，平面磁性元件具有很高的质量系数Q.当用作变压器时，其具有大的增益和高电压比。 由于元件小而薄，因此适用于集成电路，并且可以极大地有助于电子设备的小型化。

    Amorphous magnetic thin film and plane magnetic element using same
    5.
    发明授权
    Amorphous magnetic thin film and plane magnetic element using same 失效
    非晶磁性薄膜和使用其的平面磁性元件

    公开(公告)号：US5522946A

    公开(公告)日：1996-06-04

    申请号：US266757

    申请日：1994-06-28

    申请人： Hiroshi Tomita ,  Tetsuo Inoue ,  Hiromi Fuke ,  Toshiro Sato ,  Tetsuhiko Mizoguchi

    发明人： Hiroshi Tomita ,  Tetsuo Inoue ,  Hiromi Fuke ,  Toshiro Sato ,  Tetsuhiko Mizoguchi

    IPC分类号： C22C45/00 ,  H01F10/12 ,  H01F10/13 ,  H01F10/16 ,  H01F19/00 ,  H01F30/10 ,  H01F1/153

    CPC分类号： H01F10/131 ,  H01F10/132 ,  H01F30/10

    摘要： An amorphous magnetic thin film possesses as at least part of a thin film forming area a microstructure composed of a first amorphous phase containing at least either of iron and cobalt and bearing magnetism and a second amorphous phase disposed round the first amorphous phase and containing boron and at least one element selected from among the elements of the 4B Group in the Periodic Table of Elements and exhibits uniaxial magnetic anisotropy in the plane of film. The amorphous magnetic thin film possesses soft magnetism concurrently satisfying high saturation magnetization and high resistivity and, at the same time, easily acquires high frequency permeability by applying magnetic field in the hard axis of magnetization. Use of these amorphous magnetic thin films for plane magnetic elements permits the plane magnetic elements to be miniaturized and to be endowed with exalted performance. The amorphous magnetic thin film possesses a composition substantially represented by the formula:(Fe.sub.1-x Co.sub.x).sub.1-y (B.sub.1-z X.sub.z).sub.y(wherein X stands for at least one element selected from among the 4B Group elements and x, y, and z stand for numerals satisfying the expressions, 0

    摘要翻译： 无定形磁性薄膜至少具有薄膜形成区域的至少一部分，该微结构由包含铁和钴中的至少一种和承载磁性的第一非晶相组成，而第二非晶相设置在第一非晶相周围并含有硼和 选自元素周期表4B族的元素中的至少一种元素，并且在膜的平面中显示单轴磁各向异性。 非晶磁性薄膜具有同时满足高饱和磁化强度和高电阻率的软磁性，同时通过在硬磁化轴上施加磁场容易地获得高频磁导率。 这些非晶磁性薄膜用于平面磁性元件允许平面磁性元件小型化并赋予高级性能。 非晶磁性薄膜具有基本上由式（Fe1-xCox）1-y（B1-zXz）y表示的组成（其中X表示选自4B族元素中的至少一种元素，x，y和 z表示满足表达式0

    Soft magnetic thin film and thin film magnetic element using the same
    6.
    发明授权
    Soft magnetic thin film and thin film magnetic element using the same 失效
    软磁薄膜和薄膜磁性元件使用相同

    公开(公告)号：US5750273A

    公开(公告)日：1998-05-12

    申请号：US623529

    申请日：1996-03-29

    申请人： Tetsuo Inoue ,  Hiroshi Tomita ,  Tetsuhiko Mizoguchi ,  Hiromi Fuke

    发明人： Tetsuo Inoue ,  Hiroshi Tomita ,  Tetsuhiko Mizoguchi ,  Hiromi Fuke

    IPC分类号： H01F10/14 ,  G11B5/31 ,  H01F10/12 ,  H01F10/13 ,  H01F10/16 ,  H01F10/187 ,  H01F17/00 ,  H01F17/04 ,  H01F41/18 ,  H01F41/20 ,  G11B5/66

    CPC分类号： H01F10/131 ,  H01F10/187 ,  H01F17/04 ,  G11B5/3113 ,  Y10S428/90 ,  Y10T428/12931 ,  Y10T428/12979

    摘要： A thin film magnetic element is disclosed which uses a soft magnetic thin film having a composition represented by the general formula: T.sub.100-x-y M.sub.x (AO.sub.v).sub.y (wherein T stands for at least one element selected from the group consisting of Fe and Co, M for at least one element selected from the group consisting of Zr, Hf, Nb, and Y, and A for at least one element selected from the group consisting of Si, Ge, Sn, B, P, and C, and x, y, and v respectively satisfy the expressions, 5.ltoreq.x.ltoreq.20 at. %, 8.ltoreq.y.ltoreq.25 at. %, and 0.ltoreq.v.ltoreq.2), consisting of a homogeneous amorphous phase, and having resistivity of not less than 1000 .mu..OMEGA..multidot.cm. Further, a thin film magnetic element is disclosed which uses a soft magnetic thin film of a microstructure having a composition substantially represented by the general formula, T.sub.100-x-z M.sub.x (AO.sub.v).sub.z (1.ltoreq.z.+-.10 at. %) and consisting of a microcrystalline phase and a first amorphous phase and a second amorphous phase disposed around the phases mentioned above.

    摘要翻译： 公开了一种薄膜磁性元件，其使用具有由以下通式表示的组成的软磁性薄膜：T100-x-yMx（AOv）y（其中T表示选自Fe和Co中的至少一种元素 ，选自由Zr，Hf，Nb和Y组成的组中的至少一种元素的M，以及选自Si，Ge，Sn，B，P和C中的至少一种元素的A和x ，y和v分别满足以下表达式：5≤x≤20原子％，8≤y≤25原子％，0≤v≤2），由 均匀非晶相，电阻率不小于1000μmOMEGA xcm。 此外，公开了一种薄膜磁性元件，其使用具有基本上由通式T100-x-zMx（AOv）z（1≤z+/- 10at。％）组成的组成的微结构的软磁薄膜， ），并且由微晶相和第一非晶相以及设置在上述相周围的第二非晶相组成。