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公开(公告)号：US20060284217A1
公开(公告)日：2006-12-21
申请号：US11501777
申请日：2006-08-10
Applicant: Rajesh Kumar , Yuichi Takeuchi , Mitsuhiro Kataoka , Suhail Jeremy , Andrei Mihaila , Florin Udrea
Inventor： Rajesh Kumar , Yuichi Takeuchi , Mitsuhiro Kataoka , Suhail Jeremy , Andrei Mihaila , Florin Udrea
IPC: H01L29/80
CPC classification number: H01L29/8083 , H01L29/1608
Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate including first and second gate layers, a channel layer, a source layer, and a trench; a gate wiring having a first portion and a plurality of second portions; and a source wiring having a third portion and a plurality of fourth portions. The trench extends in a predetermined extending direction. The first portion connects to the first gate layer in the trench, and extends to the extending direction. The second portions protrude perpendicularly to be a comb shape. The third portion extends to the extending direction. The fourth portions protrude perpendicularly to be a comb shape, and electrically connect to the source layer. Each of the second portions connects to the second gate layer through a contact hole.
Abstract translation: 碳化硅半导体器件包括：包括第一和第二栅极层，沟道层，源极层和沟槽的半导体衬底; 栅极布线，具有第一部分和多个第二部分; 以及具有第三部分和多个第四部分的源极布线。 沟槽沿预定的延伸方向延伸。 第一部分连接到沟槽中的第一栅极层，并延伸到延伸方向。 第二部分垂直突出成为梳形。 第三部分延伸到延伸方向。 第四部分垂直突出成梳状，并且电连接到源层。 每个第二部分通过接触孔连接到第二栅极层。
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42.发明申请Alkylated and polymeric macromolecular antioxidants and methods of making and using the same 失效烷基化和聚合的大分子抗氧化剂及其制备和使用方法公开(公告)号：US20060233741A1
公开(公告)日：2006-10-19
申请号：US11389564
申请日：2006-03-24
Applicant: Rajesh Kumar , Ashok Cholli
Inventor： Rajesh Kumar , Ashok Cholli
IPC: A61K31/785 , C08G65/14
CPC classification number: C07C235/38 , C07C239/16 , C08G8/08 , C08G73/028 , C08K5/005 , C08K5/20 , C09K15/08 , C09K15/24 , C10L1/224 , C10L2230/081
Abstract: Alkylated antioxidant macromolecules are represented by Structural Formula 1: wherein the variables are described herein. Also included are methods of making the molecules and methods of using the molecules as antioxidants.
Abstract translation: 烷基化抗氧化剂大分子由结构式1表示：其中变量在本文中描述。 还包括制备分子的方法和使用分子作为抗氧化剂的方法。
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43.发明申请公开(公告)号：US20060189824A1
公开(公告)日：2006-08-24
申请号：US11360020
申请日：2006-02-22
Applicant: Rajesh Kumar , Suizhou Yang , Vijayendra Kumar , Ashok Cholli
Inventor： Rajesh Kumar , Suizhou Yang , Vijayendra Kumar , Ashok Cholli
IPC: C07C215/34
CPC classification number: C07C213/02 , C07C215/50 , C07C229/38 , C08K5/005 , C10M133/14 , C10M149/22 , C10M159/12 , C10M177/00 , C10M2207/026 , C10M2207/08 , C10M2215/04 , C10M2215/06 , C10M2215/066 , C10N2230/10 , C10N2270/00
Abstract: Disclosed are compounds represented by structural formula (I): methods of producing compounds represented by structural formula (I) and their use in inhibiting oxidation in an oxidizable material.
Abstract translation: 公开了由结构式（I）表示的化合物：由结构式（I）表示的化合物的制备方法及其在可氧化材料中的抑制氧化的用途。
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公开(公告)号：US20060099271A1
公开(公告)日：2006-05-11
申请号：US11312371
申请日：2005-12-21
Applicant: Michael Rickey , J. Michael Ramstack , Rajesh Kumar
Inventor： Michael Rickey , J. Michael Ramstack , Rajesh Kumar
CPC classification number: A61K38/09 , A61K9/1641 , A61K9/1647 , A61K9/1682 , A61K9/1694 , A61K9/5089 , A61K31/519 , B01J8/025 , B01J13/08 , B01J13/12 , B01J13/206 , B01J14/00 , B01J19/121 , B01J19/122 , B01J19/2415 , B01J2219/0877
Abstract: Methods for preparing microparticles having reduced residual solvent levels. Microparticles are contacted with a non-aqueous washing system to reduce the level of residual solvent in the microparticles. Preferred non-aqueous washing systems include 100% ethanol and a blend of ethanol and heptane. A solvent blend of a hardening solvent and a washing solvent can be used to harden and wash microparticles in a single step, thereby eliminating the need for a post-hardening wash step.
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公开(公告)号：US20060094857A1
公开(公告)日：2006-05-04
申请号：US11252819
申请日：2005-10-18
Applicant: Rajesh Kumar , Arthur Watterson , Virinder Parmar , Jayant Kumar , Lynne Samuelson
Inventor： Rajesh Kumar , Arthur Watterson , Virinder Parmar , Jayant Kumar , Lynne Samuelson
Abstract: The invention relates to new methods of enzymatic synthesis of polymers such as polyorganosilicones and polyesters, and new polymers made by these methods.
Abstract translation: 本发明涉及聚合物如聚有机硅氧烷和聚酯的酶合成新方法，以及通过这些方法制备的新型聚合物。
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Patent Agency Ranking
46.发明授权公开(公告)号：US07005678B2
公开(公告)日：2006-02-28
申请号：US10984953
申请日：2004-11-10
Applicant: Rajesh Kumar , Andrei Mihaila , Florin Udrea
Inventor： Rajesh Kumar , Andrei Mihaila , Florin Udrea
IPC: H01L31/0312
CPC classification number: H01L29/66068 , H01L29/1608 , H01L29/8083 , Y10S438/931
Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate including a base substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer, which are laminated in this order; a cell portion disposed in the semiconductor substrate and providing an electric part forming portion; and a periphery portion surrounding the cell portion. The periphery portion includes a trench, which penetrates the second and the third semiconductor layers, reaches the first semiconductor layer, and surrounds the cell portion so that the second and the third semiconductor layers are divided by the trench substantially. The periphery portion further includes a fourth semiconductor layer disposed on an inner wall of the trench.
Abstract translation: 碳化硅半导体器件包括：依次层叠的包括基底基板，第一半导体层，第二半导体层和第三半导体层的半导体基板; 设置在所述半导体衬底中并提供电气部件形成部分的单元部分; 以及围绕单元部分的周边部分。 周边部分包括穿透第二和第三半导体层的沟槽到达第一半导体层，并且围绕电池部分，使得第二和第三半导体层基本上被沟槽划分。 外围部分还包括设置在沟槽的内壁上的第四半导体层。
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47.发明申请Method and apparatus for interleaving text and media in a real-time transport session 有权用于在实时传输会话中交织文本和媒体的方法和装置公开(公告)号：US20060007916A1
公开(公告)日：2006-01-12
申请号：US10982620
申请日：2004-11-03
Applicant: Paul Jones , Rajesh Kumar , Mehryar Garakani , Herbert Wildfeuer
Inventor： Paul Jones , Rajesh Kumar , Mehryar Garakani , Herbert Wildfeuer
CPC classification number: H04L47/10 , H04L12/66 , H04L29/06027 , H04L47/11 , H04L47/2416 , H04L47/263 , H04L47/34 , H04L65/1069 , H04L65/1083
Abstract: Text is interleaved and transported along with media data over the same real-time Internet Protocol (IP) media transport session. A network processing device identifies text characters corresponding with text signaling. The identified text characters are formatted into text packets and sent over the same real-time IP media transport session used for real-time media transport. The media transport session can identify the sequence that the text characters are transmitted and can specify a maximum character transfer rate.
Abstract translation: 文本与媒体数据在相同的实时互联网协议（IP）媒体传输会话上进行交织和传输。 网络处理设备识别与文本信令相对应的文本字符。 所识别的文本字符被格式化成文本分组，并通过用于实时媒体传输的相同的实时IP媒体传输会话发送。 媒体传输会话可以识别发送文本字符的顺序，并且可以指定最大字符传输速率。
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48.发明申请公开(公告)号：US20050258454A1
公开(公告)日：2005-11-24
申请号：US11135661
申请日：2005-05-24
Applicant: Rajesh Kumar , Tsuyoshi Yamamoto , Hiroki Nakamura , Toshiyuki Morishita , Takasumi Ohyanagi , Atsuo Watanabe
Inventor： Rajesh Kumar , Tsuyoshi Yamamoto , Hiroki Nakamura , Toshiyuki Morishita , Takasumi Ohyanagi , Atsuo Watanabe
IPC: H01L21/04 , H01L21/336 , H01L27/098 , H01L27/10 , H01L29/06 , H01L29/24 , H01L29/78 , H01L29/808
CPC classification number: H01L29/1608 , H01L27/098 , H01L29/0619 , H01L29/66068 , H01L29/8083
Abstract: A manufacturing method of a silicon carbide semiconductor device includes the steps of: preparing a semiconductor substrate including a silicon carbide substrate, a drift layer and a first semiconductor layer; forming a plurality of first trenches in a cell portion; forming a gate layer on an inner wall of each first trench by an epitaxial growth method; forming a first insulation film on the surface of the semiconductor substrate; forming a gate electrode on the first insulation film for connecting to the gate layer electrically; forming a source electrode on the first insulation film for connecting to the first semiconductor layer in the cell portion; and forming a drain electrode connected to the silicon carbide substrate electrically.
Abstract translation: 碳化硅半导体器件的制造方法包括以下步骤：制备包括碳化硅衬底，漂移层和第一半导体层的半导体衬底; 在单元部分中形成多个第一沟槽; 通过外延生长法在每个第一沟槽的内壁上形成栅极层; 在所述半导体衬底的表面上形成第一绝缘膜; 在所述第一绝缘膜上形成用于电连接到所述栅极层的栅电极; 在所述第一绝缘膜上形成用于连接到所述单元部分中的所述第一半导体层的源电极; 以及电连接到所述碳化硅衬底的漏电极。
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公开(公告)号：US06962963B2
公开(公告)日：2005-11-08
申请号：US10688582
申请日：2003-10-17
Applicant: Rajesh Kumar , Arthur C. Watterson , Virinder Singh Parmar , Jayant Kumar , Lynne Ann Samuelson
Inventor： Rajesh Kumar , Arthur C. Watterson , Virinder Singh Parmar , Jayant Kumar , Lynne Ann Samuelson
IPC: C12P7/62 , C12P9/00 , C08G77/08 , C08G77/26 , C08G77/445
Abstract: The invention relates to new methods of enzymatic synthesis of polymers such as polyorganosilicones and polyesters, and new polymers made by these methods.
Abstract translation: 本发明涉及聚合物如聚有机硅氧烷和聚酯的酶合成新方法，以及通过这些方法制备的新型聚合物。
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50.发明申请公开(公告)号：US20050151158A1
公开(公告)日：2005-07-14
申请号：US10984953
申请日：2004-11-10
Applicant: Rajesh Kumar , Andrei Mihaila , Florin Udrea
Inventor： Rajesh Kumar , Andrei Mihaila , Florin Udrea
IPC: H01L29/06 , H01L21/04 , H01L21/337 , H01L21/8232 , H01L27/06 , H01L29/24 , H01L29/808 , H01L29/15 , H01L21/332
CPC classification number: H01L29/66068 , H01L29/1608 , H01L29/8083 , Y10S438/931
Abstract: A silicon carbide semiconductor device includes: a semiconductor substrate including a base substrate, a first semiconductor layer, a second semiconductor layer and a third semiconductor layer, which are laminated in this order; a cell portion disposed in the semiconductor substrate and providing an electric part forming portion; and a periphery portion surrounding the cell portion. The periphery portion includes a trench, which penetrates the second and the third semiconductor layers, reaches the first semiconductor layer, and surrounds the cell portion so that the second and the third semiconductor layers are divided by the trench substantially. The periphery portion further includes a fourth semiconductor layer disposed on an inner wall of the trench.
Abstract translation: 碳化硅半导体器件包括：依次层叠的包括基底基板，第一半导体层，第二半导体层和第三半导体层的半导体基板; 设置在所述半导体衬底中并提供电气部件形成部分的单元部分; 以及围绕单元部分的周边部分。 周边部分包括穿透第二和第三半导体层的沟槽到达第一半导体层，并且围绕电池部分，使得第二和第三半导体层基本上被沟槽划分。 外围部分还包括设置在沟槽的内壁上的第四半导体层。
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