公开(公告)号：US10855893B2

公开(公告)日：2020-12-01

申请号：US16740060

申请日：2020-01-10

Applicant: SONY CORPORATION

Inventor： Yoshiaki Masuda ,  Yuki Miyanami ,  Hideshi Abe ,  Tomoyuki Hirano ,  Masanari Yamaguchi ,  Yoshiki Ebiko ,  Kazufumi Watanabe ,  Tomoharu Ogita

IPC: H04N5/225 ,  G02B1/118 ,  H01L27/146 ,  H04N5/369 ,  H01L31/0232 ,  H04N5/359 ,  H04N5/374 ,  H04N9/04 ,  H01L31/0203 ,  H01L31/10

Abstract: The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture.The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

公开(公告)号：US10541332B2

公开(公告)日：2020-01-21

申请号：US15698210

申请日：2017-09-07

Applicant: Sony Corporation

Inventor： Yuki Miyanami

IPC: H01L29/78 ,  H01L21/3105 ,  H01L21/318 ,  H01L21/768 ,  H01L29/66 ,  H01L29/423 ,  H01L21/306 ,  H01L29/49 ,  H01L29/51

Abstract: A semiconductor device includes: a sidewall insulating film; a gate electrode; source and drain regions; a first stress film; and a second stress film.

公开(公告)号：US20170005122A1

公开(公告)日：2017-01-05

申请号：US15266713

申请日：2016-09-15

Applicant: Sony Corporation

Inventor： Yuki Miyanami

IPC: H01L27/146 ,  H04N5/3745 ,  H04N9/083 ,  H04N5/378

CPC classification number: H01L27/1463 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14685 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/083

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receiving incident light through a light sensing surface, and a pixel separation portion that is embedded into a trench provided on a side portion of the photoelectric conversion portion and electrically separates the plurality of pixels in a side of an incident surface of the semiconductor substrate into which the incident light enters. The pixel separation portion is formed by an insulation material which absorbs the incident light entering the light sensing surface.

Abstract translation: 固态成像装置包括多个光电转换部分，每个光电转换部分设置成对应于半导体衬底中的多个像素中的每一个，并且通过光感测表面接收入射光;以及像素分离部分，其被嵌入到提供的沟槽中 在光电转换部分的侧部上，并且使入射光入射到的半导体衬底的入射面的一侧的多个像素电分离。 像素分离部由吸收进入光检测面的入射光的绝缘材料形成。

公开(公告)号：US20160372508A1

公开(公告)日：2016-12-22

申请号：US15257665

申请日：2016-09-06

Applicant: SONY CORPORATION

Inventor： Yuki Miyanami

IPC: H01L27/146 ,  H04N5/225 ,  H04N9/04 ,  H04N5/378

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/2253 ,  H04N5/3575 ,  H04N5/376 ,  H04N5/378 ,  H04N9/04

Abstract: The present disclosure relates to a solid-state imaging device and a manufacturing method of the same, and an electronic apparatus, capable of more reliably suppressing occurrence of color mixing. A trench is formed between PDs so as to be opened to a light receiving surface side of a semiconductor substrate on which a plurality of the PDs, each of which receives light to generate charges, are formed, an insulating film is embedded in the trench and the insulating film is laminated on a back surface side of the semiconductor substrate. Then, a light shielding portion is formed so as to be laminated on the insulating film and to have a convex shape protruding to the semiconductor substrate at a location corresponding to the trench. The present technology can be applied to a back surface irradiation type CMOS solid-state imaging device.

公开(公告)号：US09461085B2

公开(公告)日：2016-10-04

申请号：US15085305

申请日：2016-03-30

Applicant: SONY CORPORATION

Inventor： Yuki Miyanami

IPC: H01L27/146 ,  H04N5/357 ,  H04N5/378

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/2253 ,  H04N5/3575 ,  H04N5/376 ,  H04N5/378 ,  H04N9/04

Abstract: The present disclosure relates to a solid-state imaging device and a manufacturing method of the same, and an electronic apparatus, capable of more reliably suppressing occurrence of color mixing.A trench is formed between PDs so as to be opened to a light receiving surface side of a semiconductor substrate on which a plurality of the PDs, each of which receives light to generate charges, are formed, an insulating film is embedded in the trench and the insulating film is laminated on a back surface side of the semiconductor substrate. Then, a light shielding portion is formed so as to be laminated on the insulating film and to have a convex shape protruding to the semiconductor substrate at a location corresponding to the trench. The present technology can be applied to a back surface irradiation type CMOS solid-state imaging device.

Abstract translation: 在PD之间形成沟槽，以便在半导体衬底的光接收表面侧开口，在其上形成有多个PD，每个PD接收光以产生电荷，绝缘膜嵌入沟槽中， 绝缘膜层叠在半导体基板的背面侧。 然后，形成遮光部分，以在层叠在绝缘膜上并且在对应于沟槽的位置处具有向半导体衬底突出的凸形。 本技术可以应用于背面照射型CMOS固态成像装置。

公开(公告)号：US20160211289A1

公开(公告)日：2016-07-21

申请号：US15085305

申请日：2016-03-30

Applicant: SONY CORPORATION

Inventor： Yuki Miyanami

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/357

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/2253 ,  H04N5/3575 ,  H04N5/376 ,  H04N5/378 ,  H04N9/04

Abstract: The present disclosure relates to a solid-state imaging device and a manufacturing method of the same, and an electronic apparatus, capable of more reliably suppressing occurrence of color mixing.A trench is formed between PDs so as to be opened to a light receiving surface side of a semiconductor substrate on which a plurality of the PDs, each of which receives light to generate charges, are formed, an insulating film is embedded in the trench and the insulating film is laminated on a back surface side of the semiconductor substrate. Then, a light shielding portion is formed so as to be laminated on the insulating film and to have a convex shape protruding to the semiconductor substrate at a location corresponding to the trench. The present technology can be applied to a back surface irradiation type CMOS solid-state imaging device.

公开(公告)号：US09293722B2

公开(公告)日：2016-03-22

申请号：US14395401

申请日：2013-04-17

Applicant: SONY CORPORATION

Inventor： Yuki Miyanami

IPC: H01L51/44 ,  H01L27/30

CPC classification number: H01L51/448 ,  H01L27/307

Abstract: A solid-state image pickup device includes: an organic photoelectric conversion layer; a passivation layer formed to cover a top of the organic photoelectric conversion layer; and an insulating film formed on the passivation layer and in a slit produced on a level difference in the passivation layer, the insulating film having a smaller refractive index than that of the passivation layer.

Abstract translation: 固态摄像装置包括：有机光电转换层; 形成为覆盖有机光电转换层的顶部的钝化层; 以及绝缘膜，其形成在钝化层上，并且在以钝化层的电平差产生的狭缝中，所述绝缘膜的折射率小于钝化层的折射率。

公开(公告)号：US20150349002A1

公开(公告)日：2015-12-03

申请号：US14820888

申请日：2015-08-07

Applicant: Sony Corporation

Inventor： Yuki Miyanami

IPC: H01L27/146 ,  H04N5/378

CPC classification number: H01L27/1463 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14645 ,  H01L27/14685 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/083

Abstract: A solid-state imaging device includes a plurality of photoelectric conversion portions each provided to correspond to each of a plurality of pixels in a semiconductor substrate and receiving incident light through a light sensing surface, and a pixel separation portion that is embedded into a trench provided on a side portion of the photoelectric conversion portion and electrically separates the plurality of pixels in a side of an incident surface of the semiconductor substrate into which the incident light enters. The pixel separation portion is formed by an insulation material which absorbs the incident light entering the light sensing surface.

Abstract translation: 固态成像装置包括多个光电转换部分，每个光电转换部分设置成对应于半导体衬底中的多个像素中的每一个，并且通过光感测表面接收入射光;以及像素分离部分，其被嵌入到提供的沟槽中 在光电转换部分的侧部上，并且使入射光入射到的半导体衬底的入射面的一侧的多个像素电分离。 像素分离部由吸收进入光检测面的入射光的绝缘材料形成。

公开(公告)号：US09184201B2

公开(公告)日：2015-11-10

申请号：US14720410

申请日：2015-05-22

Applicant: SONY CORPORATION

Inventor： Yuki Miyanami

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/376 ,  H04N5/357

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/2253 ,  H04N5/3575 ,  H04N5/376 ,  H04N5/378 ,  H04N9/04

Abstract: The present disclosure relates to a solid-state imaging device and a manufacturing method of the same, and an electronic apparatus, capable of more reliably suppressing occurrence of color mixing.A trench is formed between PDs so as to be opened to a light receiving surface side of a semiconductor substrate on which a plurality of the PDs, each of which receives light to generate charges, are formed, an insulating film is embedded in the trench and the insulating film is laminated on a back surface side of the semiconductor substrate. Then, a light shielding portion is formed so as to be laminated on the insulating film and to have a convex shape protruding to the semiconductor substrate at a location corresponding to the trench. The present technology can be applied to a back surface irradiation type CMOS solid-state imaging device.

公开(公告)号：US20150255496A1

公开(公告)日：2015-09-10

申请号：US14720410

申请日：2015-05-22

Applicant: SONY CORPORATION

Inventor： Yuki Miyanami

IPC: H01L27/146 ,  H04N5/376 ,  H04N5/357 ,  H04N5/378

CPC classification number: H01L27/14623 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14689 ,  H04N5/2253 ,  H04N5/3575 ,  H04N5/376 ,  H04N5/378 ,  H04N9/04

Abstract: The present disclosure relates to a solid-state imaging device and a manufacturing method of the same, and an electronic apparatus, capable of more reliably suppressing occurrence of color mixing.A trench is formed between PDs so as to be opened to a light receiving surface side of a semiconductor substrate on which a plurality of the PDs, each of which receives light to generate charges, are formed, an insulating film is embedded in the trench and the insulating film is laminated on a back surface side of the semiconductor substrate. Then, a light shielding portion is formed so as to be laminated on the insulating film and to have a convex shape protruding to the semiconductor substrate at a location corresponding to the trench. The present technology can be applied to a back surface irradiation type CMOS solid-state imaging device.

Abstract translation: 本公开内容涉及能够更可靠地抑制混色发生的固态成像装置及其制造方法以及电子装置。 在PD之间形成沟槽，以便在半导体衬底的光接收表面侧开口，在其上形成有多个PD，每个PD接收光以产生电荷，绝缘膜嵌入沟槽中， 绝缘膜层叠在半导体基板的背面侧。 然后，形成遮光部分，以在层叠在绝缘膜上并且在对应于沟槽的位置处具有向半导体衬底突出的凸形。 本技术可以应用于背面照射型CMOS固态成像装置。