NANOSTRUCTURE COMPOSITE AND METHOD OF PRODUCING THE SAME
    41.
    发明申请
    NANOSTRUCTURE COMPOSITE AND METHOD OF PRODUCING THE SAME 审中-公开
    纳米结构复合材料及其制造方法

    公开(公告)号:US20100255252A1

    公开(公告)日:2010-10-07

    申请号:US12676185

    申请日:2008-09-03

    Abstract: Provided is a nano structure composite and a method of manufacturing the same. More specifically, a nano structure composite that includes a substrate, a first layer formed of carbon nano structures on the substrate, and a second layer formed of metal oxide nano structures on the first layer, and a method of manufacturing the same are provided. When the nano structure composite according to the present invention is used, a device having a field emission characteristic higher efficiency than a conventional device can be realized, and also, the device can be manufactured at a lower temperature and at a lower pressure. Thus, manufacturing cost can be reduced and a large scale process can be performed.

    Abstract translation: 提供了一种纳米结构复合材料及其制造方法。 更具体地说,提供一种纳米结构复合体及其制造方法,所述纳米结构复合体包括基板,由所述基板上的碳纳米结构形成的第一层和由所述第一层上的金属氧化物纳米结构形成的第二层。 当使用根据本发明的纳米结构复合材料时,可以实现具有比常规器件更高效率的场发射特性的器件,并且还可以在较低温度和较低压力下制造器件。 因此,可以降低制造成本并且可以执行大规模处理。

    Flash memory device and method of forming the device
    42.
    发明授权
    Flash memory device and method of forming the device 失效
    闪存装置及其形成方法

    公开(公告)号:US07767566B2

    公开(公告)日:2010-08-03

    申请号:US11963563

    申请日:2007-12-21

    Applicant: Sung-Jin Kim

    Inventor: Sung-Jin Kim

    CPC classification number: H01L27/115 H01L27/11519

    Abstract: Cell gate patterns including first portions separated from each other with a first distance and second portions separated from each other with a second distance less than the first distance, and spacers are formed both sidewalls of the pair of cell gate patterns. The spacers formed on the sidewalls of the second portions are removed using a mask pattern. Accordingly, it is possible to prevent increase of an aspect ratio of a gap between the second portions with the small distance. Since the spacers formed on the sidewalls of the second portions separated from each other with the small distance are selectively removed, it is possible to minimize the increase of the aspect ratio of the gap between the second portions. Thus, it is possible to solve various problems which are caused due to occurrence of a void.

    Abstract translation: 电池栅极图案包括彼此分离的第一部分,第一距离和第二部分彼此分开,第二距离小于第一距离,并且间隔物形成在该对单元栅极图案的两个侧壁上。 使用掩模图案去除形成在第二部分的侧壁上的间隔物。 因此,可以防止第二部分之间的间隙的纵横比以较小的距离增加。 由于选择性地除去形成在彼此分开的小的距离的第二部分的侧壁上的间隔物,所以可以最小化第二部分之间的间隙的纵横比的增加。 因此,可以解决由于空隙的发生而引起的各种问题。

    Module for manufacturing a display device, method of manufacturing the same, and method of manufacturing a display device using the same
    43.
    发明授权
    Module for manufacturing a display device, method of manufacturing the same, and method of manufacturing a display device using the same 失效
    用于制造显示装置的模块及其制造方法以及使用其的显示装置的制造方法

    公开(公告)号:US07568961B2

    公开(公告)日:2009-08-04

    申请号:US11404208

    申请日:2006-04-14

    Applicant: Sung-Jin Kim

    Inventor: Sung-Jin Kim

    Abstract: A module for manufacturing a display device, a method for manufacturing the module, and a method for manufacturing a display device using the module, are provided. The module includes a solid substrate, a first flexible substrate, a second flexible substrate, and a third flexible substrate in one embodiment. The solid substrate has an upper surface and a lower surface facing to the upper surface. The first flexible substrate is on the upper surface of the solid substrate, and the second flexible substrate is on the first flexible substrate and has an opening to receive a flexible display substrate that has a display element. The third flexible substrate is on the lower surface of the solid substrate to prevent a bending of the solid substrate. Advantageously, a malfunction of pixels of the display element is decreased, and the module for manufacturing the display device may be recycled to decrease a manufacturing cost of the display device.

    Abstract translation: 提供一种显示装置的制造用模块,该模块的制造方法以及使用该模块的显示装置的制造方法。 在一个实施例中,该模块包括固体衬底,第一柔性衬底,第二柔性衬底和第三柔性衬底。 固体基板具有面向上表面的上表面和下表面。 第一柔性基板在固体基板的上表面上,第二柔性基板位于第一柔性基板上,并且具有开口以接收具有显示元件的柔性显示基板。 第三柔性基板在固体基板的下表面上,以防止固体基板弯曲。 有利地,显示元件的像素的故障减少,并且用于制造显示装置的模块可以被再循环以降低显示装置的制造成本。

    In-plane switching mode liquid crystal display device and method of fabricating the same
    44.
    发明授权
    In-plane switching mode liquid crystal display device and method of fabricating the same 有权
    面内切换模式液晶显示装置及其制造方法

    公开(公告)号:US07542119B2

    公开(公告)日:2009-06-02

    申请号:US11246234

    申请日:2005-10-11

    CPC classification number: G02F1/134363 G02F2201/124

    Abstract: An array substrate for an in-plane switching mode liquid crystal display devices includes: a substrate; a gate line and a data line on the substrate, the gate line crossing the data line to define a pixel region; a common line parallel to the gate line; a thin film transistor connected to the gate line and the data line; a plurality of common electrodes extending from the common line, and a plurality of pixel electrodes alternating with the plurality of common electrodes, wherein a gap distance is defined as a width of a block by the adjacent common and pixel electrode in the pixel region, and at least one gap distance is different from the other gap distances.

    Abstract translation: 面内切换模式液晶显示装置的阵列基板包括:基板; 栅极线和数据线,栅极线与数据线交叉以限定像素区域; 与栅极线平行的公共线; 连接到栅极线和数据线的薄膜晶体管; 从公共线延伸的多个公共电极和与多个公共电极交替的多个像素电极,其中间隙距离被定义为像素区域中的相邻公共和像素电极的块宽度,以及 至少一个间隙距离与其他间隙距离不同。

    Thin film transistor array panel and manufacturing method thereof
    45.
    发明授权
    Thin film transistor array panel and manufacturing method thereof 失效
    薄膜晶体管阵列面板及其制造方法

    公开(公告)号:US07527992B2

    公开(公告)日:2009-05-05

    申请号:US11260017

    申请日:2005-10-26

    Abstract: A thin film transistor array panel is provided, which includes a substrate, a plurality of gate line formed on the substrate, a plurality of common electrodes having a transparent conductive layer on the substrate, a gate insulating layer covering the gate lines and the common electrodes, a plurality of semiconductor layers formed on the gate insulating layer, a plurality of data lines including a plurality of source electrodes and formed on the semiconductor layer and the gate insulating layer, a plurality of drain electrodes formed on the semiconductor layer and the gate insulating layer, and a plurality of pixel electrodes overlapping the common electrodes and connected to the drain electrodes. Because the common electrodes are made of ITON, IZON, or a-ITON, or a double layer of ITO/ITON, IZO/IZON, or a-a-ITO/a-ITON, when H2 or SiH4 are injected to form a silicon nitride (SiNX) layer on the common electrodes, the opaque metal Sn or Zn in which the metal component is reduced in the IZO, ITO, or a-ITO is not produced on the surfaces of the common electrode.

    Abstract translation: 提供薄膜晶体管阵列面板,其包括基板,形成在基板上的多个栅极线,在基板上具有透明导电层的多个公共电极,覆盖栅极线和公共电极的栅极绝缘层 形成在所述栅极绝缘层上的多个半导体层,形成在所述半导体层和所述栅极绝缘层上的多个源极电极的多条数据线,形成在所述半导体层上的多个漏电极和所述栅极绝缘体 并且与公共电极重叠并连接到漏电极的多个像素电极。 由于公共电极由ITON,IZON或者-IONON制成,或者是将双重层的ITO / ITON,IZO / IZON或者a-ITO / a-ITON,当注入H 2或SiH 4以形成氮化硅时 SiNX)层,在公共电极的表面上不产生在IZO,ITO或ITO中还原金属成分的不透明金属Sn或Zn。

    FLASH MEMORY DEVICE AND METHOD OF FORMING THE DEVICE
    47.
    发明申请
    FLASH MEMORY DEVICE AND METHOD OF FORMING THE DEVICE 失效
    闪存存储器件和形成器件的方法

    公开(公告)号:US20080157180A1

    公开(公告)日:2008-07-03

    申请号:US11963563

    申请日:2007-12-21

    Applicant: Sung-Jin Kim

    Inventor: Sung-Jin Kim

    CPC classification number: H01L27/115 H01L27/11519

    Abstract: Cell gate patterns including first portions separated from each other with a first distance and second portions separated from each other with a second distance less than the first distance, and spacers are formed both sidewalls of the pair of cell gate patterns. The spacers formed on the sidewalls of the second portions are removed using a mask pattern. Accordingly, it is possible to prevent increase of an aspect ratio of a gap between the second portions with the small distance. Since the spacers formed on the sidewalls of the second portions separated from each other with the small distance are selectively removed, it is possible to minimize the increase of the aspect ratio of the gap between the second portions. Thus, it is possible to solve various problems which are caused due to occurrence of a void.

    Abstract translation: 电池栅极图案包括彼此分离的第一部分,第一距离和第二部分彼此分开,第二距离小于第一距离,并且间隔物形成在该对单元栅极图案的两个侧壁上。 使用掩模图案去除形成在第二部分的侧壁上的间隔物。 因此,可以防止第二部分之间的间隙的纵横比以较小的距离增加。 由于选择性地除去形成在彼此分开的小的距离的第二部分的侧壁上的间隔物,所以可以最小化第二部分之间的间隙的纵横比的增加。 因此,可以解决由于空隙的发生而引起的各种问题。

    Apparatus and method for transmitting/receiving data in a multi-antenna system, and system using the same
    48.
    发明申请
    Apparatus and method for transmitting/receiving data in a multi-antenna system, and system using the same 有权
    用于在多天线系统中发送/接收数据的装置和方法,以及使用该天线系统的系统

    公开(公告)号:US20080056414A1

    公开(公告)日:2008-03-06

    申请号:US11896479

    申请日:2007-08-31

    Abstract: A data reception apparatus and method for generating and transmitting feedback information in a multi-antenna system using grouped antennas, and a data transmission apparatus and method for transmitting a data stream of a user according to a transmission mode selected depending on the feedback information is disclosed. The reception apparatus generates feedback information depending on maximum channel quality information, an antenna group index associated with the maximum channel quality information, rank information, and remaining channel quality information associated with the rank information, and transmits the feedback information to the transmission apparatus. The transmission apparatus selects one of a multi-user mode and a single-user mode as a transmission mode depending on the feedback information and transmits a data stream of a user via multiple antenna groups or one antenna group, according to the selected transmission mode.

    Abstract translation: 公开了一种使用分组天线在多天线系统中产生和发送反馈信息的数据接收装置和方法,以及用于根据反馈信息选择的传输模式发送用户的数据流的数据传输装置和方法 。 接收装置根据最大信道质量信息,与最大信道质量信息相关联的天线组索引,秩信息和与等级信息相关联的剩余信道质量信息来生成反馈信息,并将该反馈信息发送到发送装置。 发送装置根据反馈信息选择多用户模式和单用户模式之一作为发送模式,并且根据所选择的发送模式,经由多个天线组或一个天线组来发送用户的数据流。

    Mobile communication apparatus and method including base station and mobile station having multi-antenna
    49.
    发明授权
    Mobile communication apparatus and method including base station and mobile station having multi-antenna 有权
    包括具有多天线的基站和移动站的移动通信装置和方法

    公开(公告)号:US07324480B2

    公开(公告)日:2008-01-29

    申请号:US10520694

    申请日:2003-07-10

    Abstract: A mobile communication apparatus including a base station and at least two mobile stations, having multiple antennas, respectively is provided. In the mobile communication apparatus, the base station restores from feedback signals transmitted from the mobile stations weight information determined in the mobile stations, generates from the restored weight information downlink control information ensuring maximum throughput to each of the mobile stations, and selects from among data of all of the mobile stations data of a desired mobile station(s) to be transmitted, based on the downlink control information. Each of each of the mobile stations has at least one mobile station antenna, the base station has at least two base station antennas, and the downlink control information includes mobile station selection information, an optimal basis matrix index, and optimal gain indices. As a result, nominal peak throughput in multi-antenna mobile communications can be efficiently achieved at low costs.

    Abstract translation: 提供了分别具有多个天线的基站和至少两个移动台的移动通信装置。 在移动通信装置中,基站从移动台发送的反馈信号中恢复加权信息,从恢复的加权信息生成确保每个移动台的最大吞吐量的下行链路控制信息,并从数据中进行选择 基于下行链路控制信息,要发送的所需移动台的所有移动站数据的数据。 每个移动台具有至少一个移动台天线,基站具有至少两个基站天线,并且下行链路控制信息包括移动台选择信息,最优基矩阵索引和最优增益索引。 因此,可以以低成本有效地实现多天线移动通信中的标称峰值吞吐量。

    Methods of fabricating semiconductor devices having thin film transistors
    50.
    发明授权
    Methods of fabricating semiconductor devices having thin film transistors 有权
    制造具有薄膜晶体管的半导体器件的方法

    公开(公告)号:US07312110B2

    公开(公告)日:2007-12-25

    申请号:US11098648

    申请日:2005-04-04

    CPC classification number: H01L27/1108 H01L27/0688 H01L27/11 H01L29/78603

    Abstract: Methods of fabricating semiconductor devices are provided. An interlayer insulating layer is provided on a single crystalline semiconductor substrate. A single crystalline semiconductor plug is provided that extends through the interlayer insulating layer and a molding layer pattern is provided on the semiconductor substrate and the single crystalline semiconductor plug. The molding layer pattern defines an opening therein that at least partially exposes a portion of the single crystalline semiconductor plug. A single crystalline semiconductor epitaxial pattern is provided on the exposed portion of single crystalline semiconductor plug using a selective epitaxial growth technique that uses the exposed portion of the single crystalline semiconductor plug as a seed layer. A single crystalline semiconductor region is provided in the opening. The single crystalline semiconductor region includes at least a portion of the single crystalline semiconductor epitaxial pattern.

    Abstract translation: 提供制造半导体器件的方法。 层间绝缘层设置在单晶半导体衬底上。 提供延伸穿过层间绝缘层的单晶半导体插头,并且在半导体衬底和单晶半导体插头上设置成型层图案。 模制层图案限定其中的开口,其至少部分地暴露单晶半导体插塞的一部分。 使用选择性外延生长技术在单晶半导体插塞的暴露部分上提供单晶半导体外延图案,其使用单晶半导体插塞的暴露部分作为籽晶层。 在开口中设置单晶半导体区域。 单晶半导体区域包括单晶半导体外延图案的至少一部分。

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