公开(公告)号：US20180123026A1

公开(公告)日：2018-05-03

申请号：US15708747

申请日：2017-09-19

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H01L43/08 ,  H01L43/02 ,  H01L27/22 ,  G11C11/16 ,  H03H11/04 ,  H01F10/32 ,  H03H7/06

CPC classification number: H01L43/08 ,  G11C11/161 ,  G11C11/1653 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/222 ,  H01L43/02 ,  H03H7/06 ,  H03H11/04

Abstract: The present invention has the purpose of providing an electric-current-generated magnetic field assist type spin-current-induced magnetization reversal element that utilizes magnetization reversal based on pure spin current. The electric-current-generated magnetic field assist type spin-current-induced magnetization reversal element of the present invention includes a first ferromagnetic metal layer with a varying magnetization direction; spin-orbit torque wiring that adjoins the first ferromagnetic metal layer and that extends in a second direction in a plane orthogonal to a first direction normal to the first ferromagnetic metal layer; and electric-current-generated magnetic field assist wiring that is arranged so as to be electrically insulated from the first ferromagnetic metal layer by an insulating layer and in which flows an electric current I0 for forming a magnetic field H0 that assists magnetization reversal of the first ferromagnetic metal layer.

公开(公告)号：US20230397505A1

公开(公告)日：2023-12-07

申请号：US18237014

申请日：2023-08-23

Applicant: TDK CORPORATION

Inventor： Zhenyao TANG ,  Yohei SHIOKAWA ,  Tomoyuki SASAKI

IPC: H10N52/80 ,  H10B61/00 ,  H10N50/85 ,  H10N52/00 ,  H10N52/01

CPC classification number: H10N52/80 ,  H10B61/22 ,  H10N52/01 ,  H10N52/00 ,  H10N50/85

Abstract: A magnetic device includes a stacked body including a first ferromagnetic layer, a second ferromagnetic layer, and a non-magnetic layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; a first insulating layer which covers side surfaces of the stacked body; and a radiator located outside the first insulating layer with respect to the stacked body, in which a distance between the stacked body and the radiator differs depending on a position of the stacked body in a stacking direction.

公开(公告)号：US20230247916A1

公开(公告)日：2023-08-03

申请号：US17912556

申请日：2021-07-30

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H10N52/80 ,  H01F10/32 ,  H10B61/00 ,  H10N52/85

CPC classification number: H10N52/80 ,  H01F10/3254 ,  H01F10/3272 ,  H10B61/00 ,  H10N52/85

Abstract: A magnetic element according to the present embodiment includes a wiring layer, and a first ferromagnetic layer in contact with the wiring layer, in which the wiring layer includes a crystalline first layer, and an amorphous second layer which is between the first ferromagnetic layer and the first layer.

公开(公告)号：US20230215480A1

公开(公告)日：2023-07-06

申请号：US17928330

申请日：2020-06-02

Applicant: TDK CORPORATION

Inventor： Yohei SHIOKAWA

IPC: G11C11/16 ,  G11C5/08 ,  H10B61/00 ,  H10N50/10

CPC classification number: G11C11/1675 ,  G11C5/08 ,  G11C11/161 ,  H10B61/22 ,  H10N50/10

Abstract: A magnetoresistance effect element includes a wiring that extends in a first direction, a laminate that includes a first ferromagnetic layer connected to the wiring, a first conductive part and a second conductive part that sandwich the first ferromagnetic layer therebetween in a plan view in a lamination direction, and a resistor that has a geometrical center overlapping a geometrical center of the first conductive part or farther away from the laminate than the geometrical center of the first conductive part in the first direction when viewed in a plan view in the lamination direction.

公开(公告)号：US20230189663A1

公开(公告)日：2023-06-15

申请号：US18103818

申请日：2023-01-31

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA ,  Atsushi TSUMITA

IPC: H10N52/80 ,  G11C11/18 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85 ,  H10N52/01 ,  G11C11/16

CPC classification number: H10N52/80 ,  G11C11/18 ,  H10B61/22 ,  H10N50/10 ,  H10N50/85 ,  H10N52/01 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element, a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.

公开(公告)号：US20230180629A1

公开(公告)日：2023-06-08

申请号：US17927469

申请日：2021-11-15

Applicant: TDK CORPORATION

Inventor： Kosuke HAMANAKA ,  Yohei SHIOKAWA ,  Minoru SANUKI

IPC: H10N52/85 ,  H10B61/00

CPC classification number: H10N52/85 ,  H10B61/22

Abstract: This magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer in contact with the spin-orbit torque wiring, in which the spin-orbit torque wiring includes a first layer, a second layer, and a third layer in order from a side closer to the first ferromagnetic layer, and a coefficient of linear expansion of a material forming the second layer is between a coefficient of linear expansion of a material forming the first layer and a coefficient of linear expansion of a material forming the third layer.

公开(公告)号：US20220406993A1

公开(公告)日：2022-12-22

申请号：US16981310

申请日：2020-01-24

Applicant: TDK CORPORATION

Inventor： Kosuke HAMANAKA ,  Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10

Abstract: A spin element according to the present embodiment includes a wiring, a laminate including a first ferromagnetic layer laminated on the wiring, a first conductive part and a second conductive part with the first ferromagnetic layer therebetween in a plan view in a lamination direction, and an intermediate layer which is in contact with the wiring and is between the first conductive part and the wiring, wherein a diffusion coefficient of a second element including the intermediate layer with respect to a first element including the wiring is smaller than a diffusion coefficient of a third element constituting the first conductive part with respect to the first element or a diffusion coefficient of the third element including the first conductive part with respect to the second element constituting the wiring is smaller than a diffusion coefficient of the third element with respect to the first element constituting the intermediate layer.

公开(公告)号：US20220190234A1

公开(公告)日：2022-06-16

申请号：US17545467

申请日：2021-12-08

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA ,  Yugo ISHITANI ,  Kosuke HAMANAKA ,  Eiji KOMURA

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06 ,  H01L43/10 ,  H01L43/14

Abstract: The magnetization rotation element includes: a spin-orbit torque wiring; and a first ferromagnetic layer which is stacked on the spin-orbit torque wiring, wherein the spin-orbit torque wiring includes a plurality of wiring layers, and wherein, in a cross section orthogonal to a length direction of the spin-orbit torque wiring, a product between a cross-sectional area and a resistivity of each of the wiring layers is larger in the wiring layer closer to the first ferromagnetic layer.

公开(公告)号：US20210399210A1

公开(公告)日：2021-12-23

申请号：US16959690

申请日：2020-01-24

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Yohei SHIOKAWA

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06

Abstract: A spin element includes a wiring, a laminated body including a first ferromagnetic layer laminated on the wiring, a first conductive part and a second conductive part which sandwich the first ferromagnetic layer in a plan view in a laminating direction, and a first high resistance layer which is in contact with the wiring between the first conductive part and the wiring and has an electrical resistivity equal to or higher than that of the wiring.

公开(公告)号：US20210184105A1

公开(公告)日：2021-06-17

申请号：US17269173

申请日：2019-02-01

Applicant: TDK CORPORATION

Inventor： Tomoyuki SASAKI ,  Atsushi TSUMITA ,  Yohei SHIOKAWA

IPC: H01L43/04 ,  H01L27/22 ,  H01L43/06

Abstract: A spin-orbit torque magnetoresistance effect element includes an element part including a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer positioned between the first ferromagnetic layer and the second ferromagnetic layer, a spin-orbit torque wiring positioned in a first direction with respect to the element part, facing the first ferromagnetic layer of the element part, and extending in a second direction, a first conductive part and a second conductive part facing the spin-orbit torque wiring at positions sandwiching the element part when viewed from the first direction, and a gate part including a gate insulating layer and a gate electrode in order from a position near the spin-orbit torque wiring, in which the spin-orbit torque wiring includes a semiconductor to which a scattering element is added.