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    PHASE DETECTION AUTOFOCUS TECHNIQUES
    42.
    发明申请
    PHASE DETECTION AUTOFOCUS TECHNIQUES 有权

    公开(公告)号：US20170110501A1

    公开(公告)日：2017-04-20

    申请号：US14883849

    申请日：2015-10-15

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Wen-I Hsu ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Keng-Yu Chou

    IPC: H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/14605 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14685

    Abstract: The present disclosure relates to an image sensor having autofocus function and associated methods. In some embodiments, the integrated circuit has a photodiode array with a plurality of photodiodes disposed within a semiconductor substrate and a composite grid overlying the photodiode array and having a first plurality of openings and a second plurality of openings extending vertically through the composite grid. The integrated circuit further has an image sensing pixel array with a plurality of color filters disposed in the first plurality of openings. The integrated circuit further has a phase detection pixel array having a plurality of phase detection components that are smaller than the plurality of color filters and that have a low refractive index (low-n) material with a refractive index (n) smaller than a refractive index of the plurality of color filters, wherein the phase detection components are disposed in the second plurality of openings.

    Composite grid structure to reduce crosstalk in back side illumination image sensors
    43.
    发明授权
    Composite grid structure to reduce crosstalk in back side illumination image sensors 有权
    复合网格结构，减少背面照明图像传感器的串扰

    公开(公告)号：US09564468B2

    公开(公告)日：2017-02-07

    申请号：US14663899

    申请日：2015-03-20

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Shyh-Fann Ting ,  Wei-Chieh Chiang ,  Yuichiro Yamashita

    IPC: H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685

    Abstract: A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A metal grid overlies the semiconductor substrate and is made up of metal grid segments that surround outer perimeters of the photodiodes, respectively, such that first openings within the metal grid overlie the photodiodes, respectively. A low-n grid is made up of low-n grid segments that surround the respective outer perimeters of the photodiodes, respectively, such that second openings within the low-n grid overlie the photodiodes, respectively. Color filters are arranged in the first and second openings of the photodiodes and have a refractive index greater than a refractive index of the low-n grid. A substrate isolation grid extends into the semiconductor substrate and is made up of isolation grid segments that surround outer perimeters of the photodiodes, respectively. A method for manufacturing the BSI pixel sensors is also provided.

    Abstract translation: 提供了用于背面照明（BSI）像素传感器的半导体结构。 光电二极管布置在半导体衬底内。 金属网格覆盖半导体衬底，并且由分别围绕光电二极管的外周的金属栅格段组成，使得金属栅格内的第一开口分别覆盖在光电二极管上。 低n栅格分别由围绕光电二极管的相应外周的低n栅格段组成，使得低n栅格内的第二开口分别覆盖光电二极管。 滤光器布置在光电二极管的第一和第二开口中并且具有大于低n栅格的折射率的折射率。 衬底隔离栅格延伸到半导体衬底中，并且由分别围绕光电二极管外周的隔离栅格段组成。 还提供了用于制造BSI像素传感器的方法。

    Composite Grid Structure to Reduce Cross Talk in Back Side Illumination Image Sensors
    44.
    发明申请
    Composite Grid Structure to Reduce Cross Talk in Back Side Illumination Image Sensors 有权
    复合网格结构，以减少背面照明图像传感器的交谈

    公开(公告)号：US20160276395A1

    公开(公告)日：2016-09-22

    申请号：US14663918

    申请日：2015-03-20

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Keng-Yu Chou ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Shyh-Fann Ting ,  Wei-Chieh Chiang ,  Yuichiro Yamashita

    IPC: H01L27/146

    CPC classification number: H01L27/14645 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687

    Abstract: A semiconductor structure for back side illumination (BSI) pixel sensors is provided. Photodiodes are arranged within a semiconductor substrate. A composite grid includes a metal grid and a low refractive index (low-n) grid. The metal grid includes first openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. The low-n grid includes second openings overlying the semiconductor substrate and corresponding to ones of the photodiodes. Color filters are arranged in the first and second openings of the corresponding photodiodes and have a refractive index greater than a refractive index of the low-n grid. Upper surfaces of the color filters are offset relative to an upper surface of the composite grid. A method for manufacturing the BSI pixel sensors is also provided.

    Abstract translation: 提供了用于背面照明（BSI）像素传感器的半导体结构。 光电二极管布置在半导体衬底内。 复合网格包括金属网格和低折射率（low-n）网格。 金属栅格包括覆盖半导体衬底并对应于一个光电二极管的第一开口。 低n栅格包括覆盖半导体衬底并对应于光电二极管中的一个的第二开口。 彩色滤光器布置在相应的光电二极管的第一和第二开口中并且具有大于低n栅格的折射率的折射率。 滤色片的上表面相对于复合网格的上表面偏移。 还提供了用于制造BSI像素传感器的方法。

    DEEP TRENCH ISOLATION FOR CROSS-TALK REDUCTION
    45.
    发明申请
    DEEP TRENCH ISOLATION FOR CROSS-TALK REDUCTION 有权

    公开(公告)号：US20220359583A1

    公开(公告)日：2022-11-10

    申请号：US17411526

    申请日：2021-08-25

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng Yu Huang ,  Wei-Chieh Chiang ,  Keng-Yu Chou ,  Chun-Hao Chuang ,  Wen-Hau Wu ,  Chih-Kung Chang

    IPC: H01L27/146

    Abstract: Some embodiments relate to a CMOS image sensor disposed on a substrate. A plurality of pixel regions comprising a plurality of photodiodes, respectively, are configured to receive radiation that enters a back-side of the substrate. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions, and includes a first set of BDTI segments extending in a first direction and a second set of BDTI segments extending in a second direction perpendicular to the first direction to laterally surround the photodiode. The BDTI structure comprises a first material. A pixel deep trench isolation (PDTI) structure is disposed within the BDTI structure and overlies the photodiode. The PDTI structure comprises a second material that differs from the first material, and includes a first PDTI segment extending in the first direction such that the first PDTI segment is surrounded by the BDTI structure.

    NARROW BAND FILTER WITH HIGH TRANSMISSION
    48.
    发明申请
    NARROW BAND FILTER WITH HIGH TRANSMISSION 有权

    公开(公告)号：US20210265408A1

    公开(公告)日：2021-08-26

    申请号：US17236311

    申请日：2021-04-21

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

    IPC: H01L27/146

    Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

    NARROW BAND FILTER WITH HIGH TRANSMISSION
    50.
    发明申请
    NARROW BAND FILTER WITH HIGH TRANSMISSION 审中-公开

    公开(公告)号：US20200227460A1

    公开(公告)日：2020-07-16

    申请号：US16837312

    申请日：2020-04-01

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

    IPC: H01L27/146

    Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

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