公开(公告)号：US06487135B2

公开(公告)日：2002-11-26

申请号：US09931895

申请日：2001-08-20

申请人： Takao Watanabe ,  Hiroyuki Mizuno ,  Satoru Akiyama

发明人： Takao Watanabe ,  Hiroyuki Mizuno ,  Satoru Akiyama

IPC分类号： G11C700

CPC分类号： G11C7/222 ,  G11C7/1072 ,  G11C7/22 ,  G11C11/406 ,  G11C11/4076

摘要： A memory includes firs circuit RFPDRAM including memory cells and operating in response to first clock signal, second circuit and third circuit coupled with first circuit and bLs coupling first circuit to second and third circuits. The second circuit outputs in response to second clock signal, first address signal to first circuit. The third circuit outputs in response to third clock signal, second address signal to first circuit. The first circuit includes refresh control circuit executing refresh operation for memory cell in response to fourth clock signal and address latch for storing first or second address signal in response to first clock signal. The first clock signal has frequency equal to or more than sum of frequencies respectively of second, third, and fourth clock signals.

摘要翻译： 存储器包括包括存储器单元的第一电路RFPDRAM，并且响应于第一时钟信号，第二电路和与第一电路耦合的第三电路和将第一电路耦合到第二和第三电路的bL进行操作。 第二电路响应于第二时钟信号输出第一地址信号到第一电路。 第三电路响应于第三时钟信号输出第二地址信号到第一电路。 第一电路包括响应于第四时钟信号而对存储器单元执行刷新操作的刷新控制电路和响应于第一时钟信号存储第一或第二地址信号的地址锁存器。 第一时钟信号的频率分别等于或大于第二，第三和第四时钟信号的频率之和。

公开(公告)号：US06285626B1

公开(公告)日：2001-09-04

申请号：US09730785

申请日：2000-12-07

申请人： Hiroyuki Mizuno ,  Yusuke Kanno ,  Takao Watanabe

发明人： Hiroyuki Mizuno ,  Yusuke Kanno ,  Takao Watanabe

IPC分类号： G11C800

摘要： A dynamic memory requires refreshing to retain data in its memory cells. This may cause access to the dynamic memory for purposes other than refreshing (external access) and access to it for refreshing to compete with each other, resulting in a performance deterioration. According to this invention, a pipelined dynamic memory (PDRAM) is used, and the pipeline frequency (CLK) of the pipelined dynamic memory is made higher than the frequency (CLK1) of external access, and access required for refreshing is made to an unoccupied slot (a timing when any external access request is never issued) in the pipeline of the pipelined dynamic memory. This makes refreshing of the internal dynamic memory an internal operation, which eliminates the need to take refreshing into consideration at the time external access is made, leading to improvement in operating ease and speed.

公开(公告)号：US20100309741A1

公开(公告)日：2010-12-09

申请号：US12859445

申请日：2010-08-19

申请人： HIROYUKI MIZUNO ,  Takeshi Sakata ,  Nobuhiro Oodaira ,  Takao Watanabe ,  Yusuke Kanno

发明人： HIROYUKI MIZUNO ,  Takeshi Sakata ,  Nobuhiro Oodaira ,  Takao Watanabe ,  Yusuke Kanno

IPC分类号： G11C7/00

CPC分类号： G11C11/4076 ,  G11C7/04 ,  G11C7/065 ,  G11C7/08 ,  G11C7/12 ,  G11C7/18 ,  G11C11/4091 ,  G11C11/4094 ,  G11C11/4097 ,  G11C2207/002 ,  G11C2207/005

摘要： The present invention provides a sense circuit for DRAM memory cell to cover the events that a sense time becomes remarkably longer when a power source voltage is lowered, a sense time under the low voltage condition becomes shorter when temperature rises and a sense time changes to a large extent for fluctuation of processes. The present invention provides the following typical effects. A switch means is provided between the bit line BL and local bit line LBL connected to the memory cells for isolation and coupling of these bit lines. The bit line BL is precharged to the voltage of VDL/2, while the local bit line LBL is precharged to the voltage of VDL. The VDL is the maximum amplitude voltage of the bit line BL. A sense amplifier SA comprises a first circuit including a differential MOS pair having the gate connected to the bit line BL and a second circuit connected to the local bit line LBL for full amplitude amplification and for holding the data. When the bit line BL and local bit line LBL are capacitance-coupled via a capacitor, it is recommended to use a latch type sense amplifier SA connected to the local bit line LBL.

摘要翻译： 本发明提供了一种用于DRAM存储单元的感测电路，以覆盖当电源电压降低时感测时间变得显着更长的事件，当温度升高时，低电压条件下的感测时间变短，感测时间变为 过程波动很大程度。 本发明提供以下典型的效果。 在位线BL和连接到存储器单元的局部位线LBL之间提供开关装置，用于这些位线的隔离和耦合。 位线BL被预充电到VDL / 2的电压，而局部位线LBL被预充电到VDL的电压。 VDL是位线BL的最大幅度电压。 读出放大器SA包括第一电路，其包括具有连接到位线BL的栅极的差分MOS对，以及连接到用于全幅放大的局部位线LBL并用于保持该数据的第二电路。 当位线BL和本地位线LBL通过电容器电容耦合时，建议使用连接到局部位线LBL的锁存型读出放大器SA。

公开(公告)号：US20070101088A1

公开(公告)日：2007-05-03

申请号：US11641808

申请日：2006-12-20

申请人： Kazushige Ayukawa ,  Seiji Miura ,  Jun Satoh ,  Takao Watanabe ,  Kazumasa Yanagisawa ,  Yusuke Kanno ,  Hiroyuki Mizuno

发明人： Kazushige Ayukawa ,  Seiji Miura ,  Jun Satoh ,  Takao Watanabe ,  Kazumasa Yanagisawa ,  Yusuke Kanno ,  Hiroyuki Mizuno

IPC分类号： G06F13/00

CPC分类号： G11C7/1006 ,  G06F12/0215 ,  G06F12/0893 ,  G06F13/161 ,  G06F2212/3042 ,  G11C7/065 ,  G11C11/4091 ,  G11C11/4093 ,  G11C2207/104 ,  G11C2207/2245

摘要： To enhance the speed of first access (read access different in word line from the previous access) to a multi-bank memory, multi-bank memory macro structures are used. Data are held in a sense amplifier for every memory bank. When access is hit to the held data, data latched by the sense amplifier are output to thereby enhance the speed of first access to the memory macro structures. Namely, each memory bank is made to function as a sense amplifier cache. To enhance the hit ratio of such a sense amplifier cache more greatly, an access controller self-prefetches the next address (an address to which a predetermined offset has been added) after access to a memory macro structure so that data in the self-prefetched address are preread by a sense amplifier in another memory bank.

摘要翻译： 为了提高第一次访问的速度（从先前访问的字线读取访问）到多存储体存储器，使用多存储体存储器宏结构。 数据保存在每个存储体的读出放大器中。 当对保持的数据进行访问时，输出由读出放大器锁存的数据，从而提高对存储器宏结构的首次访问的速度。 即，使每个存储体用作读出放大器高速缓存。 为了更好地提高这种感测放大器高速缓存的命中率，访问控制器在访问存储器宏结构之后自我预取下一个地址（已经添加了预定偏移量的地址），以便自我预取中的数据 地址由另一个存储体中的读出放大器预读。

公开(公告)号：US07165151B2

公开(公告)日：2007-01-16

申请号：US11010324

申请日：2004-12-14

申请人： Kazushige Ayukawa ,  Seiji Miura ,  Jun Satoh ,  Takao Watanabe ,  Kazumasa Yanagisawa ,  Yusuke Kanno ,  Hiroyuki Mizuno

发明人： Kazushige Ayukawa ,  Seiji Miura ,  Jun Satoh ,  Takao Watanabe ,  Kazumasa Yanagisawa ,  Yusuke Kanno ,  Hiroyuki Mizuno

IPC分类号： G06F12/00 ,  G11C7/00

CPC分类号： G11C7/1006 ,  G06F12/0215 ,  G06F12/0893 ,  G06F13/161 ,  G06F2212/3042 ,  G11C7/065 ,  G11C11/4091 ,  G11C11/4093 ,  G11C2207/104 ,  G11C2207/2245

摘要： To enhance the speed of first access (read access different in word line from the previous access) to a multi-bank memory, multi-bank memory macro structures are used. Data are held in a sense amplifier for every memory bank. When access is hit to the held data, data latched by the sense amplifier are output to thereby enhance the speed of first access to the memory macro structures. Namely, each memory bank is made to function as a sense amplifier cache. To enhance the hit ratio of such a sense amplifier cache more greatly, an access controller self-prefetches the next address (an address to which a predetermined offset has been added) after access to a memory macro structure so that data in the self-prefetched address are preread by a sense amplifier in another memory bank.

公开(公告)号：US07159067B2

公开(公告)日：2007-01-02

申请号：US10702482

申请日：2003-11-07

申请人： Yusuke Kanno ,  Hiroyuki Mizuno ,  Takao Watanabe

发明人： Yusuke Kanno ,  Hiroyuki Mizuno ,  Takao Watanabe

IPC分类号： G06F12/12 ,  G06F13/00

CPC分类号： G06F12/0607 ,  G06F12/0882

摘要： In an information processing apparatus involving a cache accessed by INDEX and TAG addresses, accesses to the main memory include many accesses attributable to the local character of referencing and write-back accesses attributable to the replacement of cache contents. Accordingly, high speed accessing requires efficient assignment of the two kinds of accesses to banks of the DRAM. In assigning request addresses from the CPU to different banks of the DRAM, bank addresses of the DRAM and generated by operation of the INDEX field and the TAG field so that local accesses whose INDEX varies and accesses at the time of writing back of which INDEX remains the same but TAG differs can be assigned to different banks. High speed accessing is made possible because accesses to the main memory can be assigned to separate banks. Furthermore, as reading and writing at the time of writing back can be assigned to a separate bank, pseudo dual-port accessing is made possible with only one port, resulting in higher speed write-back accessing.

摘要翻译： 在涉及由INDEX和TAG地址访问的高速缓冲存储器的信息处理装置中，对主存储器的访问包括归因于替代缓存内容的引用和回写访问的本地字符的许多访问。 因此，高速存取需要对DRAM的存储体的两种访问进行有效的分配。 在将请求地址从CPU分配给DRAM的不同组时，DRAM的存储区地址并通过INDEX字段和TAG字段的操作生成，以便INDEX在写入INDEX时保留的本地访问变化并访问 相同但TAG不同可以分配给不同的银行。 高速访问是可能的，因为可以将主存储器的访问分配给单独的存储区。 此外，由于在回写时的读写可以分配给单独的存储区，因此只能使用一个端口进行伪双端口访问，从而实现更高速的写回访问。

公开(公告)号：US20060197579A1

公开(公告)日：2006-09-07

申请号：US11410956

申请日：2006-04-26

申请人： Yusuke Kanno ,  Hiroyuki Mizuno ,  Takeshi Sakata ,  Takao Watanabe

发明人： Yusuke Kanno ,  Hiroyuki Mizuno ,  Takeshi Sakata ,  Takao Watanabe

IPC分类号： H03L5/00

CPC分类号： H03K19/0016 ,  H03K19/018521

摘要： A semiconductor device including a level converter (LSC) is disclosed. The level converter comprises a voltage-up circuit (LSC1) that operates on low voltage of power supply (VDD) and steps up voltage enough to drive the level converter and a level converter circuit (LSC2) that operates on high voltage of power supply (VDDQ). The voltage-up circuit is capable of constantly generating 2×VDD so that the level converter can convert a low voltage of power supply (VDD) below 1 V to VDDQ. This voltage-up circuit can be configured only with MOSFET transistors produced by thin oxide film deposition, thus enabling high-speed operation. To facilitate designing a circuit for preventing a leakage current from occurring in the level converter during sleep mode of a low-voltage-driven circuit (CB1), the level converter circuit (LSC2) includes a leak protection circuit (LPC) that exerts autonomous control for leak prevention, dispensing with external control signals.

公开(公告)号：US07016246B2

公开(公告)日：2006-03-21

申请号：US11105377

申请日：2005-04-14

申请人： Takao Watanabe ,  Hiroyuki Mizuno ,  Satoru Akiyama

发明人： Takao Watanabe ,  Hiroyuki Mizuno ,  Satoru Akiyama

IPC分类号： G11C11/405 ,  G11C7/22 ,  G11C8/14 ,  G11C11/406

CPC分类号： G11C7/222 ,  G11C7/1072 ,  G11C7/22 ,  G11C11/406 ,  G11C11/4076

摘要： A memory includes first circuit RFPDRAM including memory cells and operating in response to first clock signal, second circuit and third circuit coupled with first circuit and bus coupling first circuit to second and third circuits. The second circuit outputs in response to second clock signal, first address signal to first circuit. The third circuit outputs in response to third clock signal, second address signal to first circuit. The first circuit includes refresh control circuit executing refresh operation for memory cells in response to fourth clock signal and address latch for storing first or second address signal in response to first clock signal. The first clock signal has frequency equal to or more than sum of frequencies respectively of second, third, and fourth clock signals.

摘要翻译： 存储器包括包括存储器单元的第一电路RFPDRAM和响应于第一时钟信号，第二电路和与第一电路耦合的第三电路和第一电路耦合到第二和第三电路的总线耦合。 第二电路响应于第二时钟信号输出第一地址信号到第一电路。 第三电路响应于第三时钟信号输出第二地址信号到第一电路。 第一电路包括响应于第四时钟信号而对存储器单元执行刷新操作的刷新控制电路和响应于第一时钟信号存储第一或第二地址信号的地址锁存器。 第一时钟信号的频率分别等于或大于第二，第三和第四时钟信号的频率之和。

公开(公告)号：US20050190612A1

公开(公告)日：2005-09-01

申请号：US11117479

申请日：2005-04-29

申请人： Yusuke Kanno ,  Hiroyuki Mizuno ,  Takeshi Sakata ,  Takao Watanabe

发明人： Yusuke Kanno ,  Hiroyuki Mizuno ,  Takeshi Sakata ,  Takao Watanabe

IPC分类号： G11C5/00 ,  H03K19/0185

CPC分类号： H03K19/0016 ,  H03K19/018521

摘要： A semiconductor device including a level converter (LSC) is disclosed. The level converter comprises a voltage-up circuit (LSC1) that operates on low voltage of power supply (VDD) and steps up voltage enough to drive the level converter and a level converter circuit (LSC2) that operates on high voltage of power supply (VDDQ). The voltage-up circuit is capable of constantly generating 2×VDD so that the level converter can convert a low voltage of power supply (VDD) below 1 V to VDDQ. This voltage-up circuit can be configured only with MOSFET transistors produced by thin oxide film deposition, thus enabling high-speed operation. To facilitate designing a circuit for preventing a leakage current from occurring in the level converter during sleep mode of a low-voltage-driven circuit (CB1), the level converter circuit (LSC2) includes a leak protection circuit (LPC) that exerts autonomous control for leak prevention, dispensing with external control signals.

摘要翻译： 公开了一种包括电平转换器（LSC）的半导体器件。 电平转换器包括在低电压（VDD）下工作并升压足以驱动电平转换器的升压电路（LSC 1）和在高电压功率下工作的电平转换器电路（LSC 2） 电源（VDDQ）。 升压电路能够持续产生2xVDD，因此电平转换器可将低于1 V的低电压电压（VDD）转换为VDDQ。 该升压电路只能由通过薄氧化膜沉积制造的MOSFET晶体管配置，从而实现高速操作。 为了便于设计用于防止低电压驱动电路（CB 1）的睡眠模式期间在电平转换器中发生漏电流的电路，电平转换器电路（LSC 2）包括泄漏保护电路（LPC） 自动控制防泄漏，外接控制信号。

公开(公告)号：US06933765B2

公开(公告)日：2005-08-23

申请号：US10149189

申请日：2000-12-21

申请人： Yusuke Kanno ,  Hiroyuki Mizuno ,  Takeshi Sakata ,  Takao Watanabe

发明人： Yusuke Kanno ,  Hiroyuki Mizuno ,  Takeshi Sakata ,  Takao Watanabe

IPC分类号： G11C5/00 ,  H03K19/0185 ,  H03L5/00

CPC分类号： H03K19/0016 ,  H03K19/018521

摘要： A semiconductor device including a level converter (LSC) is disclosed. The level converter comprises a voltage-up circuit (LSC1) that operates on low voltage of power supply (VDD) and steps up voltage enough to drive the level converter and a level converter circuit (LSC2) that operates on high voltage of power supply (VDDQ). The voltage-up circuit is capable of constantly generating 2×VDD so that the level converter can convert a low voltage of power supply (VDD) below 1 V to VDDQ. This voltage-up circuit can be configured only with MOSFET transistors produced by thin oxide film deposition, thus enabling high-speed operation. To facilitate designing a circuit for preventing a leakage current from occurring in the level converter during sleep mode of a low-voltage-driven circuit (CB1), the level converter circuit (LSC2) includes a leak protection circuit (LPC) that exerts autonomous control for leak prevention, dispensing with external control signals.