公开(公告)号：US20050105039A1

公开(公告)日：2005-05-19

申请号：US11023549

申请日：2004-12-29

申请人： Takeshi Nishi ,  Satoshi Teramoto

发明人： Takeshi Nishi ,  Satoshi Teramoto

IPC分类号： G02F1/13 ,  G02F1/1333 ,  G02F1/1335

CPC分类号： G02F1/1333 ,  G02F1/133305 ,  G02F1/133516

摘要： Techniques for successively fabricating liquid crystal cells at low cost, using two resinous substrates wound on their respective rolls. A color filter and an electrode pattern are formed by printing techniques. Furthermore, an orientation film is printed. These manufacturing steps are carried out successively by rotating various rolls.

摘要翻译： 以低成本连续制造液晶单元的技术，使用缠绕在其各自辊上的两个树脂基材。 通过印刷技术形成滤色器和电极图案。 此外，印刷取向膜。 这些制造步骤通过旋转各种辊连续进行。

公开(公告)号：US20050056843A1

公开(公告)日：2005-03-17

申请号：US10857356

申请日：2004-06-01

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L21/02 ,  H01L21/20 ,  H01L21/28 ,  H01L21/322 ,  H01L21/324 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/04 ,  H01L29/49 ,  H01L29/786 ,  H01L29/10

CPC分类号： H01L29/66757 ,  H01L21/0242 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02672 ,  H01L21/02686 ,  H01L21/28158 ,  H01L21/3221 ,  H01L21/3226 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, the crystallinity is improved and the gettering of nickel elements proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm2/Vs and an S value smaller than 100 mV/dec. can be obtained.

摘要翻译： 镍选择性地保持与非晶硅膜的特定区域接触。 通过进行热处理来实现与基板平行的晶体生长。 通过在含有卤素元素的氧化气氛中进行热处理而形成热氧化膜。 在此步骤中，结晶度得到改善，并且镍元素的吸除进行。 形成薄膜晶体管，使得连接源极和漏极区域的方向与上述晶体生长方向一致。 结果，具有诸如迁移率大于200cm 2 / Vs和S值小于100mV / dec的优异特性的TFT。 可以获得。

公开(公告)号：US20050032339A1

公开(公告)日：2005-02-10

申请号：US10935307

申请日：2004-09-08

申请人： Setsuo Nakajima ,  Shunpei Yamazaki ,  Hisashi Ohtani ,  Satoshi Teramoto ,  Toshiji Hamatani

发明人： Setsuo Nakajima ,  Shunpei Yamazaki ,  Hisashi Ohtani ,  Satoshi Teramoto ,  Toshiji Hamatani

IPC分类号： G02F1/1362 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L21/20 ,  H01L21/00 ,  H01L21/36

CPC分类号： H01L29/78603 ,  G02F1/13454 ,  H01L27/12 ,  H01L27/1248 ,  Y10S438/928

摘要： There are provided a substrate of a semiconductor device and a fabrication method thereof which allow to suppress impurity from turning around from a glass or quartz substrate in fabrication steps of a TFT. An insulating film is deposited so as to surround the glass substrate by means of reduced pressure thermal CVD. It allows to suppress the impurity from infiltrating from the glass substrate to an active region of the TFT in the later process.

摘要翻译： 提供了一种半导体器件的衬底及其制造方法，其可以在TFT的制造步骤中抑制杂质从玻璃或石英衬底转向。 沉积绝缘膜，以便通过减压热CVD围绕玻璃基板。 这允许在稍后的工艺中抑制杂质从玻璃衬底渗透到TFT的有源区。

公开(公告)号：US06844628B2

公开(公告)日：2005-01-18

申请号：US10155327

申请日：2002-05-23

申请人： Shunpei Yamazaki ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Satoshi Teramoto

IPC分类号： H01L21/336 ,  H01L23/48 ,  H01L23/52 ,  H01L23/532 ,  H01L29/40 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L27/124 ,  H01L23/53214 ,  H01L27/1214 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K1/09 ,  H05K2203/0315 ,  H05K2203/0597 ,  H01L2924/00

摘要： An electronic device is provided using wiring comprising aluminum to prevent hillock or whisker from generating, wherein the wiring contains oxygen atoms at a concentration of 8×1018 atoms·cm−3 or less, carbon atoms at a concentration of 5×1018 atoms·cm−3 or less, and nitrogen atoms at a concentration of 7×1017 atoms·cm−3 or less; furthermore, a silicon nitride film is formed on the aluminum gate, and an anodic oxide film is formed on the side planes thereof.

摘要翻译： 使用包括铝的布线来提供电子装置，以防止产生小丘或晶须，其中布线含有浓度为8×10 18原子/ cm 3或更小的氧原子，浓度为5×10 18的碳原子 >原子cm -3以下，氮原子浓度为7×10 17个·cm -3以下。 此外，在铝栅极上形成氮化硅膜，在其侧面上形成阳极氧化膜。

公开(公告)号：US06716283B2

公开(公告)日：2004-04-06

申请号：US10035441

申请日：2002-01-04

申请人： Naoaki Yamaguchi ,  Koichiro Tanaka ,  Satoshi Teramoto

发明人： Naoaki Yamaguchi ,  Koichiro Tanaka ,  Satoshi Teramoto

IPC分类号： C03B100

CPC分类号： C30B13/24 ,  Y10S117/904

摘要： In an annealing process in which laser light is irradiated to a semiconductor thin film, a refractive index of the semiconductor thin film after laser light irradiation is measured and conditions for the next laser light irradiation are adjusted based on the measured refractive index value. For example, laser light irradiation conditions are adjusted so that semiconductor thin films always have the same refractive index. As a result, the annealing can be performed under the same conditions at every laser light irradiation even if the laser light irradiation conditions vary unavoidably.

摘要翻译： 在对半导体薄膜照射激光的退火处理中，测定激光照射后的半导体薄膜的折射率，并根据测定的折射率值来调整下一激光照射的条件。 例如，调整激光照射条件，使得半导体薄膜总是具有相同的折射率。 结果，即使激光照射条件不可避免地变化，也可以在每次激光照射下的相同条件下进行退火。

公开(公告)号：US06713330B1

公开(公告)日：2004-03-30

申请号：US08897359

申请日：1997-07-21

申请人： Hongyong Zhang ,  Satoshi Teramoto

发明人： Hongyong Zhang ,  Satoshi Teramoto

IPC分类号： H01L21336

CPC分类号： H01L21/02672 ,  H01L21/02675 ,  H01L21/2022 ,  H01L27/1214 ,  H01L29/66757

摘要： Method of fabricating TFTs starts with forming a nickel film selectively on a bottom layer which is formed on a substrate. An amorphous silicon film is formed on the nickel film and heated to crystallize it. The crystallized film is irradiated with infrared light to anneal it. Thus, a crystalline silicon film having excellent crystallinity is obtained. TFTs are built, using this crystalline silicon film.

摘要翻译： 制造TFT的方法首先在形成在基板上的底层上选择性地形成镍膜。 在镍膜上形成非晶硅膜并加热使其结晶。 用红外光照射结晶膜使其退火。 因此，得到结晶性优异的结晶硅膜。 使用这种晶体硅膜构建TFT。

公开(公告)号：US06597336B1

公开(公告)日：2003-07-22

申请号：US09441921

申请日：1999-11-16

申请人： Yoshiharu Hirakata ,  Satoshi Teramoto ,  Jun Koyama ,  Shunpei Yamazaki

发明人： Yoshiharu Hirakata ,  Satoshi Teramoto ,  Jun Koyama ,  Shunpei Yamazaki

IPC分类号： G09G336

CPC分类号： H04N9/12 ,  G09G3/3648 ,  G09G3/3666 ,  G09G3/3674 ,  G09G3/3677 ,  G09G2310/0224 ,  H04N5/66 ,  H04N5/74 ,  H04N2005/745

摘要： Writing of a second field is started at a time point when writing of a first field has been completed, while information written in the first field is held. Writing of a first field of the next frame is started at a time point when the writing of the second field has been completed, while information written in the second field is held. This driving method can attain high vertical resolution.

摘要翻译： 在第一场的写入已经完成的时间点开始第二场的写入，同时保持写在第一场中的信息。 在第二场的写入已经完成的时间点开始下一帧的第一场的写入，而在第二场中写入的信息被保持。 该驱动方法可以获得高垂直分辨率。

公开(公告)号：US06550325B1

公开(公告)日：2003-04-22

申请号：US08141632

申请日：1993-10-27

申请人： Takashi Inushima ,  Vaitkus Rimantas ,  Masaaki Hiroki ,  Eiji Sato ,  Satoshi Teramoto

发明人： Takashi Inushima ,  Vaitkus Rimantas ,  Masaaki Hiroki ,  Eiji Sato ,  Satoshi Teramoto

IPC分类号： G01F168

CPC分类号： G01F15/006 ,  G01F1/688

摘要： A thermistor layer made of platinum is formed on a thin diamond film. An amount of heat carried away from the diamond film by a fluid is detected as a change in the temperature of the thermistor layer. The rear side of the diamond film is kept in contact with the fluid to prevent the material of the thermistor from being corroded by the fluid. In another aspect of the invention, a heating element and a thermistor are formed on one surface of a thin diamond film. The other surface is kept in contact with a fluid. The diamond film is heated by the heating element in a quite short time of about 0.2 second. The resulting response characteristics of the diamond film are detected by the thermistor. The flow rate is calculated from the response characteristics.

摘要翻译： 在金刚石薄膜上形成由铂制成的热敏电阻层。 作为热敏电阻层的温度的变化，检测由流体从金刚石膜带走的热量。 金刚石膜的后侧与流体保持接触，以防止热敏电阻的材料被流体腐蚀。 在本发明的另一方面，在薄金刚石膜的一个表面上形成加热元件和热敏电阻。 另一个表面与流体保持接触。 金刚石膜在相当短的时间内由加热元件加热约0.2秒。 通过热敏电阻检测所得到的金刚石膜的响应特性。 流量根据响应特性计算。

公开(公告)号：US06515334B2

公开(公告)日：2003-02-04

申请号：US09916916

申请日：2001-07-26

申请人： Shunpei Yamazaki ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Satoshi Teramoto

IPC分类号： H01L2972

CPC分类号： H01L27/13 ,  H01L27/0688 ,  H01L27/1203 ,  H01L27/124 ,  H01L29/78621 ,  H03H9/0547

摘要： There is disclosed a hybrid circuit in which a circuit formed by TFTs is integrated with an RF filter. The TFTs are fabricated on a quartz substrate. A ceramic filter forming the RF filter is fabricated on another substrate. Terminals extend through the quartz substrate. The TFTs are connected with the ceramic filter via the terminals. Thus, an RF module is constructed.

公开(公告)号：US06489189B2

公开(公告)日：2002-12-03

申请号：US10041844

申请日：2001-10-24

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Akiharu Miyanaga ,  Satoshi Teramoto

IPC分类号： H01L2184

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2022 ,  H01L21/31662 ,  H01L27/1277 ,  H01L29/04 ,  H01L29/66757

摘要： A little amount of nickel is introduced into an amorphous silicon film formed on a glass substrate to crystallize the amorphous silicon film by heating. In this situation, nickel elements remain in a crystallized silicon film. An amorphous silicon film is formed on the surface of the crystallized silicon film and then subjected to a heat treatment. With this heat treatment, the nickel elements are diffused in the amorphous silicon film, thereby being capable of lowering the concentration of nickel in the crystallized silicon film.

摘要翻译： 将少量的镍引入形成在玻璃基板上的非晶硅膜中，通过加热使非晶硅膜结晶。 在这种情况下，镍元素保留在结晶硅膜中。 在结晶硅膜的表面上形成非晶硅膜，然后进行热处理。 通过这种热处理，镍元素在非晶硅膜中扩散，从而能够降低结晶硅膜中的镍浓度。